Time-resolved photoluminescence on the stimulated emission in polycrystalline ZnO nanoparticles

The detailed room temperature stimulated emission including its optical characteristics from ZnO nanoparticles, which were prepared by a homogenous precipitation method, has been investigated by the time-resolved spectroscopy. The light emission originates from a free exciton recombination at a lower excitation level; the amplified spontaneous emission appears at a moderate excitation level, in which the threshold excitation intensity is 0.65 GW cm⁻². The resonant stimulated emission was observed in ZnO nanoparticles at a higher excitation intensity. Also, the emission lifetime is drastically reduced. Compared to the fluorescence decay curves, the time-resolved spectrum of the stimulated emission suggests the Gaussian-like decay time with only a few of picoseconds. The dynamic processes of lasing behavior and the characteristics of lasing emission in ZnO nanoparticles could provide the information on the crystal quality, the exciton and the lasing action in the particles.     

Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg

Light-induced transient grating and photoluminescence measurements were employed for carrier recombination studies in variously Mg doped GaN layers. Carrier lifetime and ambipolar diffusion coefficient were found to decrease with doping from 210 to 20 ps and from 2.0 to 0.9 cm²/s,respectively, which proved the degradation of electrical quality of the layers. A threshold of stimulated emission was found to depend non-monotonously on doping and had the lowest value of 0.19 mJ/cm² in the most doped layer. This dependence was explained in terms of degeneracy of the hole system.     

Short-pulse UV laser ablation of solid and liquid metals: indium

2 to 2.5 mJ/cm² when a 0.5 ps pulse is used instead of a 15 ns laser pulse. Measurements on liquid indium show a different behavior. With 15 ns laser pulses the threshold fluence is lowered by a factor of ∼3 from 100 mJ/cm² for solid indium to 30 mJ/cm² for liquid indium. In contrast, measurements with 0.5 ps laser pulses do not show any change in the ablation threshold and are independent of the phase of the metal at 2.5 mJ/cm². This behavior could be explained by thermal diffusion and heat conduction during the laser pulse and demonstrates in an independent way the energy lost into the material when long laser pulses are applied. Time-of-flight measurements to investigate the underlying ablation mechanism show thermal behavior of the ablated indium atoms for both ps and ns ablation and can be fitted to Maxwell-Boltzmann distributions. Received: 2 December 1996/Accepted: 11 December 1996     

Synthesis and characterization of Ag-doped p-type ZnO nanowires

P-type ZnO nanowires with silver (Ag) doping were synthesized via a chemical vapor deposition process. The incorporation of Ag was confirmed by selected-area energy-dispersive x-ray spectroscopy. The formation of acceptor states was demonstrated by temperature and excitation power-dependent photoluminescence measurements. Characterization of field-effect transistors using Ag-doped ZnO nanowires as channels showed p-type conductivity of the nanowires with a hole concentration of 4.9×10¹⁷ cm⁻³ and a carrier mobility of approximately 0.18 cm² V⁻¹ s⁻¹.     

Effects of annealing temperature on the structure, photoluminescence and ferromagnetism properties of Cr-implanted ZnO nanowires

Room temperature ferromagnetism was observed in Cr-implanted ZnO nanowires annealed at 500, 600, and 700 °C. The implantation dose for Cr ions was 1×10¹⁶ cm^?2, while the implantation energies were 100 keV. Except for ZnO (100), (002), and (200) orientations, no extra diffraction peaks from Cr-related secondary phase or impurities were observed. With the increasing of annealing temperatures, the intensity of the peaks increased while the FWHM values decreased. The Cr 2p_1/2 and 2p_3/2 peaks, with a binding energy difference of 10.6 eV, appear at 586.3 and 575.7 eV, can be attributed to Cr³⁺ in ZnO nanowires. For the Cr-implanted ZnO nanowires without annealing, the band energy emission disappears and the defect related emission with wavelength of 500–700 nm dominates, which can be attributed to defects introduced by implantation. Cr-implanted ZnO nanowires annealed at 500 °C show a saturation magnetization value of over 11.4×10^?5 emu and a positive coercive field of 67 Oe. The origin of ferromagnetism behavior can be explained on the basis of electrons and defects that form bound magnetic polarons, which overlap to create a spin-split impurity band.     

Stimulated emission from trapped excitons in SnO2 nanowires

The pump fluence dependent photoluminescence (PL) spectra of SnO₂ nanowires were investigated, which were synthesized with a high-temperature chemical reduction method. The integrated intensity of the narrower peak at 3.2 eV experiences a strong superlinear dependence on the pump fluence, and the narrowest width of the sharp peak is only 19 meV. Moreover, under high excitation fluence, an ultrafast decay time (less than 20 ps) appears in the time-resolved PL spectra. The emission of these SnO₂ nanowires shows strong apparent stimulated emission behaviors although the SnO₂ is a dipole forbidden direct gap semiconductor. The stimulated emission should relate to the localized islands on the surface of nanowire, which was observed through the high resolution transmission electron microscopy (HRTEM) image. The giant-oscillator-strength effect of bound exciton generated from the localized islands was considered to induce the stimulated emission of SnO₂ nanowires.     

Gain dynamics of XeF and subpicosecond pulse generation at 351 nm

Subpicosecond pulse amplification at the 351 nm line of XeF is reported. The study of the gain dynamics of XeF with subpicosecond (subnanosecond) pulses resulted in 0.2 mJ/cm² (0.8 mJ/cm²) for the saturation energy density and 0.18 cm^–1 (0.21 cm^–1) for the small-signal-gain coefficient. In XeF a gain recovery of 78±4% with a 79±18 ps time constant is found.     

Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers

Results on time-resolved study of GaN photoluminescence (PL) in a power density range from 0.5 mW/cm² under CW excitation by ultraviolet light emitting diode (UV LED) to 1 GW/cm² under pulsed excitation by YAG:Nd laser in the temperature range from 8 to 300 K are presented. Measurements of PL response in the frequency domain by using amplitude-modulated emission of a UV LED as well as time-resolved PL measurements using a streak camera and light-induced transient grating technique have been used in the study. Yellow luminescence (YL) intensity increases with increasing temperature up to 120 K and faster components in YL decay switch to slower components with increasing temperature under UV LED excitation. At low carrier densities, the trapping decreases the carrier lifetime below 250 ps, while the carrier lifetime in the same GaN sample under excitation ensuring saturation of the traps equals 2 ns.     

Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH₃COO)₂], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm² for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.     

Stimulated emission from PbS‐quantum dots in glass matrix

The luminescence behavior of PbS‐quantum dots in glass matrix (PbS:Glass) is investigated. Steady‐state and time‐resolved photoluminescence are applied in a wide range of excitation densities up to pulse energies exceeding 50 µJ/cm². While perfect linear recombination is observed across four orders of magnitude, an additional radiative recombination mechanism emerges at an excitation density of 1 µ J/cm² per pulse at 390 nm excitation and increases the external quantum efficiency. The time constant of this process is ∼20–40 ps. It is ascribed to stimulated emission. No hint to any non‐linear non‐radiative processes such as Auger recombination is observed. Thermal effects, however, still set limits. This is encouraging news for PbS:Glass as potential laser material.     

Picosecond gain dynamics of KrF

We describe the generation of excimer-laser pulses of <10 ps pulse width and up to 40 mJ pulse energy at 248.5 nm and their use in the measurement of ps gain dynamics in a KrF amplifier. Small-signal gain of >2×10⁴, saturation energy density of 2.0 mJ/cm², and gain recovery time of 4 ns were measured. In contrast to XeCl^* no short-gain rcovery time was found in KrF^* and the stored inversion could be fully depleted bya single ps pulse.     

Two-photon excitation properties of a class of novel organic dye chloride

We present the two-photon excited (TPE) upconverted fluorescence and lasing efficiencies of a class of new pyridinium chloride having donor-π-acceptor (D-π-A) structure. Based on the excitation upon 40 ps laser pulses at 1064 nm, the experimental results showed that: the red-shift of TPE fluorescence emission peaks and the TPE fluorescence lifetime were gradually increased with the enhancement of electron-donating capability of the donor. To a certain extent, the enhanced donor would increase the two-photon pumped (TPP) upconversion lasing efficiencies, but the overlong alkyl chains would result in decreased lasing efficiencies. We could obtain TPE fluorescence lifetime of 754 ps, TPP upconversion lasing efficiency of ∼8.4%, and TPA cross-section of 6.14 × 10⁻⁴⁹cm⁴s/photon in these compounds.     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

Tunable,sub-nanosecond KrF-Raman laser in the ultraviolet

A 0.5 cm^–1 bandwidth injection-locked KrF laser pumps a rare-gas Brillouin cell to produce a reflected pulse with a leading edge risetime of 1 ns, tunable from 248.1 to 248.7 nm. Consistent with Lamb theory of laser amplifiers, subsequent excimer amplification of this pulse produces an intense 500 ps spike on the pulse leading edge. Stimulated Raman scattering then separates the spike from the parent pulse, yielding a tunable short pulse at the first Stokes (S ₁) wavelength. Varying the Raman cell length results in a variable Raman threshold and an adjustable short pulse duration: 250 ps pulses at energies of 3–4 mJ at 268 nm with a 50 cm methane cell and 350 ps, 5 mJ pulses from a 100 cm cell are measured with a streak camera. First pass Raman conversion of the spike toS ₁ followed by second pass backward Raman amplification, where the parent 248 nm pulse serves as the pump beam for the reflectedS ₁ pulse, yields simultaneousS ₁ pulses of 20–25 mJ in the 800 ps range andS ₂ pulses of 550 ps at 5–6 mJ near 290 nm. This laser will avoid collision effects during laser excitation and enable quantitative, single pulse imaging of OH radicals in turbulent combustion because of its high pulse energy.     

Stimulated emission at the second order stop-zone edge of the two-dimensional opal–zinc oxide photonic crystal

The fabrication of the 2D periodic structures in ZnO thin films by magnetron sputtering on the opal matrices was developed. The microstructures were characterized by AFM and SEM. The spontaneous and stimulated emissions of the ZnO layers on opal were studied at N₂ laser excitation (λ = 337 nm). The stimulated emission near 397 nm was observed at room temperature from ZnO–opal structure. The threshold of the electron–hole plasma recombination laser process was 300 kW/cm² for this structure. This threshold is two orders of magnitude smaller of that one for the flat ZnO–SiO₂ films owing to DFB resonator effect in 2D structure.     

Laser surface treatment of screen-printed carbon nanotube emitters for enhanced field emission

This paper investigates the surface treatment of screen-printed carbon nanotube (CNT) emitters using a 248 nm (KrF) excimer laser. The field emission characteristics of the CNT emitters are measured following irradiation using laser fluences ranging from 80 to 400 mJ/cm². The results show that the turn-on electric field, the current density, and the distribution of the emission sites are highly dependent on the value of the laser fluence and are optimized at a fluence of 150 mJ/cm². Two distinct laser fluence regimes are identified. In the low fluence regime, i.e. 80-150 mJ/cm², the surface treatment process is dominated by a photo ablation mechanism, which results in the gradual removal of the binding material from the cathode surface and leads to an improvement in the emission characteristics of the CNT cathodes with an increasing fluence. However, in the high fluence regime, i.e. 150-400 mJ/cm², the thermal ablation mechanism dominates; resulting in a removal of the CNTs from the cathode surface and a subsequent degradation in the emission characteristics.     

Synthesis and field emission properties of ZnO nanoneedle arrays grown at low temperatures via a thermal evaporation method

We have developed a straightforward and simple strategy for large-scale growth of well-aligned ZnO nanoneedles via a thermal evaporation method. XRD and SAED patterns of nanoneedles can be indexed to hexagonal ZnO with wurtzite structure. Room temperature photoluminescence analysis showed a strong ultra violet emission at 365 nm and a broad deep level visible emission at 472 nm. The growth mechanism of the nanoneedles has been investigated by SEM and the lower pressure of both evaporated zinc and oxygen flux would favor the nucleation of the finer nanowires from those previously formed high coverage spots. The field emission current density of ZnO nanoneedles sharply reached ~0.048 mA/cm² at a field of 3.1 V/m.     

Influence of laser pulse width on absolute EUV-yield from Xe-clusters

Using 50 fs ( ∼ 2×10¹⁸ W/cm²) and 2 ps ( ∼ 5×10¹⁶ W/cm²) pulses from a Ti:Sa multi-TW laser at 800 nm wavelength large Xe-clusters ( 10⁵...10⁶ atoms per cluster) have been excited. Absolute yield measurements of EUV-emission in a wavelength range between 10 nm and 15 nm in combination with cluster target variation were carried out. The ps-laser pulse has resulted in about 30% enhanced and spatially more uniform EUV-emission compared to fs-laser excitation. Circularly polarized laser light instead of linear polarization results in enhanced emission which is probably caused by electrons gaining higher energies by the polarization dependent optical field ionization process. An absolute emission efficiency at 13.4 nm of up to 0.8% in 2π sr and 2.2% bandwidth has been obtained. Received 11 January 2001 and Received in final form 27 March 2001     

Synthesis and photoluminescence properties of SnO2/ZnO hierarchical nanostructures

SnO₂/ZnO hierarchical nanostructures were synthesized by a two-step carbon assisted thermal evaporation method. SnO₂ nanowires were synthesized in the first step and were then used as substrates for the following growth of ZnO nanowires in the second step. Sn metal droplets were formed at the surfaces of the SnO₂ nanowires during the second step and were acted as catalyst to facilitate the growth of ZnO nanowires via vapor-liquid-solid mechanism. Room temperature photoluminescence measurements showed that the SnO₂/ZnO hierarchical nanostructures exhibited a strong green emission centered at about 520 nm and a weak emission centered at about 380 nm. The emissions from the SnO₂ were drastically constrained due to screen effect caused by the ZnO layer.     

Effect of pulse width and fluence of femtosecond laser on the size of nanobump array

Conical nanobump arrays were generated on gold thin film processed by interfering femtosecond laser. The transition of the height and diameter as functions of fluence and pulse width was investigated. When the fluence was 87 mJ/cm², the height and diameter were not so different at 350 fs or shorter pulse width. They decreased at longer pulse width, and no bump could be generated over 1.6 ps. The results suggest the decrease of size is due to the diffusion of electron to not-excited region, and due to heat conduction to not heated region or substrate, or change of absorbance of laser. At long pulse width of 2.4 ps and relatively higher fluence of 190 mJ/cm², nanobump had liquid-like structure as a stop motion of a water drop.