共查询到18条相似文献,搜索用时 31 毫秒
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采用有限元法对冷心放肩微量提拉法蓝宝石晶体生长过程中晶体内的温度、应力分布进行了模拟计算,结合实验结果讨论了蓝宝石晶体热性能的各向异性对晶体生长的影响.研究结果表明,对于冷心放肩微量提拉蓝宝石晶体生长系统,较大的轴向热导率有利于提高晶体的生长速率和界面稳定性,而稍大的径向热导率则有利于保持微凸的生长界面.晶体内的热应力受径向热膨胀系数的影响显著,随着径向热膨胀系数的增大而增大,最大热应力总是出现在籽晶与新生晶体的界面区域.在实验中选α轴为结晶取向,成功生长出了直径达230mm、高质量蓝宝石晶体. 相似文献
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利用数值模拟方法计算了冷心放肩微量提拉法(SAPMAC)蓝宝石晶体生长过程.结合晶体直径变化、裂纹出现位置与延续方向、晶体透明性等实验现象,通过与提拉法、温梯法、坩埚移动法等相对比,分析了冷心放肩微量提拉法晶体生长各阶段的工艺特点,并根据模拟计算结果对晶体生长系统和晶体生长控制工艺进行了改进.分别利用增大热交换器的散热参数、降低加热温度、改进降温曲线、调节外加轴向和径向温度梯度的方式来实现对晶体生长的引晶、放肩、等径和收尾控制.通过实验比较证明了改进后的晶体生长系统和晶体生长控制工艺能够生长出性能较好的大尺寸蓝宝石晶体. 相似文献
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本文用热交换法生长出a向,尺寸为φ150 mm×160 mm,重10 kg的低位错蓝宝石晶体,并采用化学腐蚀-金相显微镜法观测了(0001)晶面的位错形貌.结果显示:(0001)晶面的位错腐蚀坑呈三角形,分布较均匀和分散,图像清晰,平均位错密度较低,为2.1×103 Pits/cm2;热交换系统保温效果好,能独立控制熔体和晶体的温度梯度,温场起伏小,具有良好的稳定性和可控性,适合用来生长大直径低位错的蓝宝石晶体. 相似文献
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采用导模法生长出六片片状蓝宝石晶体,单片尺寸为350 mm×80 mm×2 mm.通过CGSim模拟软件模拟计算和实验验证,确定了合适的生长温场为横向温梯2.9~4.6 K/mm,生长速度控制在5~10 mm/h之间.对晶体进行双晶摇摆曲线测试,峰强度很高且对称性良好,摇摆曲线的半高宽FWHM=16.946″,证明晶体的结晶完整性很高.采用化学腐蚀法对六片晶体进行位错密度的检测,计算出晶体的位错密度都在103量级,中间晶体位错密度小于两边晶体的位错密度.测试了六片晶体的弯曲强度,最高强度达1583 MPa,中间晶体强度大于两边. 相似文献
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采用有限元法,对泡生法生长蓝宝石晶体不同生长阶段固液界面的形状和温度梯度进行模拟计算,探讨分析了生长速率对放肩、等径阶段蓝宝石生长的影响.结果表明:固液界面凸出度在放肩阶段较大,在等径阶段凸出度相对较小,固液界面温度梯度随着晶体生长不断减小.在合理速率范围内,放肩阶段0~2 mm/h,速率对固液界面的影响很小,等径阶段2~5 mm/h,速率对固液界面的影响越来越大,固液界面温度梯度和形变均随速率的增大而减小.利用模拟结果,调节实际晶体生长工艺参数,成功长出80 kg的大尺寸高质量蓝宝石晶体. 相似文献
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本文使用热交换法直接生长c面取向,尺寸为φ170 mm× 160 mm,重12 kg的蓝宝石晶体.晶体无色透明,内部无散射颗粒.沿c面(0001)方向的晶棒锥光图可观察到同心圆簇的干涉条纹,仅中心较小区域因内应力存在,干涉条纹发生扭曲.将抛光的晶片进行化学腐蚀后,通过金相显微镜检测位错腐蚀坑形貌图,结果显示,腐蚀坑呈三角形,平均位错密度较低,为1.98 × 103 Pits/cm2,X射线衍射半峰宽较小,晶体结构完整. 相似文献
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蓝宝石晶体因优异的综合性能被广泛用于航空航天等高性能要求领域.泡生法是目前生产大直径蓝宝石单晶的主要方法,热场对生产工艺、产品质量和单晶炉功率具有重要影响;并将影响生产成本.本文对氧化锆及钼金属组合式热屏中氧化锆材料内置、外置及材料不同组合方式对泡生法蓝宝石单晶炉功率的影响进行研究,得到合理的热场结构;并与实际生产结果进行验证.结果表明:相比于传统的15层钼保温结构,加入氧化锆保温层会明显降低单晶炉能耗,其中氧化锆内置的热场结构对单晶炉能耗降低影响更为明显;随着氧化锆层由0增加至15层,单晶炉能耗显著降低,相比传统15层钼保温结构,15层氧化锆保温结构炉体功率降低了38;. 相似文献
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C. H. Xu M. F. Zhang S. H. Meng J. C. Han G. G. Wang H. B. Zuo 《Crystal Research and Technology》2007,42(8):751-757
In this paper, the relationship between quality of sapphire crystal and growing parameters of SAPMAC (Sapphire growth technique with micro‐pulling and shoulder‐expanding at cooled center) method was discussed. Optimized temperature distribution and technique control were proposed by theoretical analysis, numerical simulation computation and experimental validation to obtain large size sapphire crystals. For a‐axis crystallized direction, with 1.0‐5.0mm/h growth velocity and 10‐30K/h temperature decreasing speed, large sapphire single crystal (∅︁240mm×210mm, 27.5kg) having high optical quality was successfully grown. The absorption spectrum of standard samples was measured as well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Guigen Wang Mingfu Zhang Jiecai Han Xiaodong He Hongbo Zuo Xinhong Yang 《Crystal Research and Technology》2008,43(5):531-536
In this paper, large‐sized (∅︁230 mm × 210 mm, 27.5 kg) sapphire was successfully grown by SAPMAC (sapphire growth technique with micro‐pulling and shoulder‐expanding at cooled center) method; and hemisphere dome (140 mm diameter, 5 mm thickness) was fabricated from as‐grown boule. Also, its high temperature infrared transmission (2∼7 µm, 20–800°C) and microwave dielectric properties (8–16.5 GHz, 30–1300°C) were investigated. The experimental results show that sapphire crystal exhibits high infrared transmittance (3 μm, 80–86%), essentially negligible dielectric loss (4.9×10‐5–3.7×10‐4), but fairly high dielectric constants (ε=9.4–12.5) in the temperature range of 30–1300°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Lunyong Zhang Hongbo Zuo Ji Zhou Jianfei Sun Dawei Xing Jiecai Han 《Crystal Research and Technology》2011,46(7):669-675
Haze defect in SAPMAC method grown sapphire crystal was studied in detail. It is shown that haze is composed by a large number of CO2 bubbles, and haze always appears in the axis region of the crystal since the bubbles formed in front of the crystallization surface are most always draged to the convection rolls in front of the central part of the crystallizaiton surface by melt and then engulfed by the rolls. Moreover, the effects of pulling rate on the formation of haze were analyzed and means for restraining haze was suggested. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Ju. Linhart 《人工晶体学报》2005,34(6):986-998
本文描述了一种特大的实验装置-辐射加热炉,获得了蓝宝石和其它高温氧化物在固相、液相时的光学、热学和物理性能.该装置和相应的技术使得在高于3500K温度下研究这些材料的粘度、熔点、热导率、发射率和吸收系数成为可能,并以此得到了高温下蓝宝石的分子热传导系数,以及不同降温速率下蓝宝石的过冷情况.此外,介绍了一种复合氧化物材料MgO-Al2O3-HfO在宽波段范围内的反射率.本文所给出的数据对于从事晶体和高温陶瓷方面研究的专家学者将很有用处. 相似文献
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Lunyong Zhang Hongbo Zuo Jianfei Sun Xiaohong Wang Jiecai Han Dawei Xing 《Crystal Research and Technology》2011,46(10):1019-1026
This paper proposes a geometric model for crystal growth by pulling. On the basis of the model, effects of the growth processes on the evolution of crystal shape were studied. Besides some effects already adopted in practice to control the crystal diameter, our results revealed several novel effects: a crystal grown under fixed process parameters could grow with a self‐stabilized diameter after shoulder‐expanding; decreasing the convex degree of solid liquid interface would enhance the increasing rate of crystal diameter or reduce the decreasing rate of crystal diameter. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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S. Zermout F. Mokhtari A. Nehari I. Lasloudji F. Haddad A. Merah 《Crystal Research and Technology》2019,54(8)
By using 3D finite element calculations, numerical simulations are performed to predict the thermal field as well as the thermal stress in a c‐axis sapphire single crystal grown by Kyropoulos technique. The effects of additional resistive heating (placed under the crucible bottom) and crystal rotation are investigated and a comparison is made between the isotropic and anisotropic analysis. The anisotropy of the elastic constants and thermal expansion coefficients as well as their temperature dependence are considered in the anisotropy calculations while Young's modulus and the Poisson ratio are used in the isotropic analysis. Thermal stress is found to be smaller in the anisotropy analysis than that in the isotropic analysis and significant differences are found in their respective distribution patterns. Additional resistive heating acts to decrease both of the crystal–melt interface convexity and the von Mises stress. In addition, crystal rotation combined with additional resistive heating decreases significantly the thermal stress inside the sapphire crystal and along the melt–crystal interface. Therefore, optimizing the heating conditions and using a suitable crystal rotation rate seem to be favorable to control the growth interface shape and to reduce thermal‐stress‐related defects during the growth process. 相似文献
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