沉积条件对ZnTe/ZnTe:Cu薄膜结构及CdTe电池性能的影响

用共蒸发法沉积了ZnTe/ZnTe:Cu复合多晶薄膜,通过XRD,XPS,C-V,I-V等研究了沉积温度对薄膜结构、Cu浓度分布及电池性能的影响.结果表明,沉积温度对薄膜的结构影响不明显,薄膜呈立方相,经185 ℃退火后出现了六方相.对薄膜的剖析发现,Cu浓度分布呈现先上升到一极大值而后快速下降的趋势, 100 ℃沉积的ZnTe/ZnTe:Cu薄膜,ZnTe层起到了阻止Cu扩散作用,用这种薄膜制作的太阳电池X_D较大 关键词： ZnTe多晶薄膜 沉积温度 薄膜结构 器件性能     

Deep-level optical spectroscopy of ZnTe

The variation of the deep-level spectrum of stoichiometric ZnTe in the various stages of its purification and annealing in saturated Zn vapor has been studied by low-temperature photoluminescence and IR Fourier spectroscopy. The relation between the concentration of the main residual impurities with complex formation probability is analyzed. We have succeeded in observing for the first time Z center emission in ZnTe, as previously in CdTe and ZnSe. This center is shown to be a multicharged impurity in ZnTe. The activation energies of these levels have been determined. A comparison of the data obtained by chemical analysis with optical spectra has led to a conclusion that this center is associated with isolated oxygen present on the metalloid sublattice. While this emission exhibits the same specific features in a number of II–VI compounds (a high recombination rate, narrow emission lines, extremely weak electron-phonon coupling), the positions of the levels in the band gap and the characteristic charge state distinguish ZnTe from CdTe and ZnSe. As a rule, the Z center forms in a material in decomposition of various complexes (for instance, of the complex responsible for the 1.65-eV emission in ZnTe) and disappears when the material is doped leading to formation of the same complexes. An assumption is put forward that this center creates the main compensating deep levels and is an essential component of easily forming complexes with impurities. Its position in the lower half of the ZnTe band gap (in contrast to ZnSe and CdTe) makes preparation of the n material difficult. Fiz. Tverd. Tela (St. Petersburg) 40, 1010–1017 (June 1998)     

IR transmission and reflection spectra of structures with ZnTe and ZnTe/ZnMgTe quantum wires

The IR transmission and reflection spectra of ensembles of one-layer (ZnTe) and two-layer (ZnTe/ZnMgTe) quantum wires have been measured in s- and p-polarized light. The optical parameters of the structures and the material/vacuum volume ratio have been found by dispersion analysis. The frequencies of IR-active modes have been calculated using a quasi-electrostatic approximation and models of prolate ellipsoid and two-layer cylinders. The spectra of ensembles of ZnTe nanowires differ little from the spectrum of bulk ZnTe, exception for some softening of the LO-like mode. The spectra of two-layer ZnTe/ZnMgTe nanowires contain interface modes along with the TO-like mode. The calculated and measured data agree well.     

Infrared luminescence and vibronic coupling in ZnTe:Fe2+

Samples of crystalline ZnTe with different concentrations of iron were prepared by the vertical high-pressure Bridgman method. Absorption and emission spectra were recorded at liquid-helium temperature in the region of the⁵ T ₂(D)⁵ E(D) infrared transitions of substitutional Fe²⁺(d ⁶) ions. In the range between 2400 and 2520 cm^–1 a rich structure is observed showing more lines than predicted by plain crystal-field theory. The explanation of all these lines is found after introducing a vibronic Jahn-Teller term to the Hamiltonian. A linear coupling between the doubly degenerate vibrational mode to the electronic orbitals of the ionic multiplet⁵ D is added to the electronic and vibrational terms of the Hamiltonian. A diagonalization follows using just one free parameter: the Jahn-Teller energy representing the strength of the coupling. The corresponding value is 3 cm^–1, which is identical to the one already reported for CdTe Fe²⁺. The calculated spectrum is in good agreement with the one determined experimentally. Measurements of the absorption spectra support conclusions drawn earlier about a Jahn-Teller coupling also for the excited multiplet. Finally a prediction of how the far-infrared would look like is also given.     

Structure and electrical properties of p-type twin ZnTe nanowires

Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowires are synthesized via the thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 141°. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowire are constructed, the corresponding electrical measurements demonstrate that the twin nanowires have a p-type conductivity with a mobility (μ _h ) of 0.11 cm² V⁻¹ S⁻¹, and a carrier concentration (n _h ) of 1.1×10¹⁷ cm⁻³. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowire field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multibarrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.     

d-core transitions in ZnTe,CdTe and HgTe

Summary We have measured the reflectivity spectra of monocrystalline ZnTe, CdTe and HgTe between 5 and 35 eV. We have interpreted the sharp structures above approximately 10 eV as transitions originating in the metal uppermostd levels. The structures give a picture of the projected densities of states of the conduction bands and supply a better understanding of their states.

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Riassunto Abbiamo misurato gli spettri di riflettività di monocristalli di ZnTe, CdTe ed HgTe tra 5 e 35 eV. Oltre i 10 eV gli spettri presentano delle strutture fini, interpretate come transizioni che hanno origine nei livellid piú alti del catione. Questa interpretazione permette di ricavare una rappresentazione schematica della densità proiettata degli stati di conduzione e di ottenere una migliore comprensione sulla natura degli stati finali stessi.

     

Cathodoluminescence characterization of ZnO:Te microstructures obtained with ZnTe and TeO2 doping precursors

ZnTe- and TeO₂-doped ZnO nanostructures and microstructures were obtained by a vapour–solid process by sintering compacted ZnO powder mixed with each precursor. Cathodoluminescence (CL) measurements show that if TeO₂ is used, then the defect band, due mainly to O vacancies (V _O), tends to reduce and even disapear, which indicates that Te reacts with ZnO and passivates the O vacancies better than if ZnTe is used as a precursor. With both precursors, a CL peak at about 3.08–3.17 eV, which overlaps with that of ZnO at about 3.26 eV, indicates that ZnTe_xO_1−x forms.     

Magnetopolaritons in ZnTe

From an invariant expansion, we construct the exciton Hamiltonian for the Γ₆×Γ₈ excitons in theT _d -type material ZnTe represented by an 8×8 matrix including the influences of a finite wave vector and an external magnetic field. We diagonalize the Hamiltonian matrix to obtain the exciton states. Then the excitons are coupled to the electromagnetic radiation field thus giving the polariton states. The theoretical dispersion curves are fitted to the results of two-photon Raman scattering and reflection experiments in magnetic fields up to 22 T. From this fit we deduce precise values for the eigenergies, exciton masses,g-factors, and diamagnetic shifts.     

High-photosensitivity p-type ZnTe

ZnTe with a high photosensitivity has been prepared by annealing single crystals of the material in an atmosphere of Zn and Ga metal and then quenching to room temperature. This material is p-type and exhibits a peak specific sensitivity of about 0.7.     

Manifestation of magnetically induced spatial dispersion in the cubic semiconductors ZnTe, CdTe, and GaAs

Nonreciprocal birefringence due to magnetically induced spatial dispersion was observed in the T _d-class cubic semiconductors ZnTe, CdTe, and GaAs near the fundamental absorption edge. The dispersion of the parameters A and g, describing the contributions from terms of the type B _ik_j to the diagonal and off-diagonal components of the permittivity tensor ε _ij(ω,B,k), is determined for ZnTe and CdTe. Analysis of the dispersion and anisotropy of the nonreciprocal birefringence shows that in ZnTe, CdTe, and GaAs, in contrast to magnetic semiconductors of the type Cd_1−x Mn_xTe, it is due excitonic mechanisms. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 7, 514–519 (10 April 1999)     

Manifestation of outgoing resonance in stokes and anti-stokes spectra of ZnTe and ZnMgTe quantum wires

The spectra of resonant light scattering by ZnTe quantum wires have been measured at excitation energies of 2.18–2.72 eV. The quantum wires have been grown on Si(100) and GaAs(100) substrates by molecular beam epitaxy. The effect of outgoing resonance with the electron transition energy E ₀ on the intensity of phonon lines of the Stokes spectrum and on the intensity ratio of the Stokes and anti-Stokes spectral lines has been studied. The energy E ₀ has been determined in ZnTe and ZnMgTe quantum wires from the edge luminescence spectra.     

Influence of the thickness of CdTe and ZnTe layers on cathodoluminescence spectra of strained CdTe/ZnTe superlattices with quantum-dot layers

The influence of the thickness of ZnTe barrier layers on the cathodoluminescence spectra of strained CdTe/ZnTe superlattices containing layers of quantum dots with an average lateral size of approximately 3 nm has been investigated. In samples with thick barrier layers (30, 15 nm), the cathodoluminescence spectra of quantum dots exhibit one band with a maximum at E = 2.03 eV. It has been revealed that, at a barrier layer thickness of ∼3 nm, the luminescence band is split. However, at a ZnTe layer thickness of 1.5 nm, the luminescence spectrum also contains one band. The experimental results have been interpreted with allowance made for the influence of elastic biaxial strains on the energy states of light and heavy holes in the CdTe and ZnTe layers. For the CdTe/ZnTe heterostructure with quantum dots in which the thickness of the deposited CdTe layer is 1.5 monolayers and the thickness of the barrier layer is 100 monolayers, the cathodoluminescence spectrum contains 2LO-phonon replicas. This effect has been explained by the resonance between two-phonon LO states and the difference between the energy states in the electronic spectrum of wetting layer fragments.     

Size and temperature effects on electric properties of CdTe/ZnTe quantum rings

The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k·p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy, defined as the energy difference between the ground electronic and the ground heavy-hole subbands, increases with the increasing QR inner diameter regardless of the temperature, while the interband energy decreases with the increasing QR height. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model, in the framework of the finite element method and the theory of elasticity of solids, shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.     

Determination of third-order nonlinearity in ZnTe by use of femtosecond laser pulses

Third-order nonlinearity induced by femtosecond pulses in ZnTe is investigated experimentally. We employ the transmission z-scan technique, using femtosecond pulses at 810 nm, to determine Kerr-type nonlinearity in ZnTe. The implications of our results to the terahertz (THz) radiation generation are discussed.     

Properties of excitons in a wide CdTe-based quantum well with irregular insertions of a fractional monolayer of ZnTe

The irregular short period CdTe/ZnTe superlattice structure is investigated by both stationary and time-resolved optical spectroscopy with and without an external magnetic field as a perturbation. This study is aimed to emphasize the properties of radiative excitonic recombination in a superlattice of this type in comparison with the excitons confined in a single QW structure. The decay time of the excitons is about 400 ps which is deduced from the time-resolved measurements. Theg-factors of electrons and holes are obtained by the spin quantum beat measurements combined with Zeeman measurements. The experimental results show that theg-factors of holes in the irregular short period CdTe/ZnTe superlattice become dramatically different in comparison with the single CdTe/CdMgTe quantum wells.     

Pressure dependence of the absorption edge at the E0 gap of mocvd - Grown ZnTe films

Abstract

We have investigated the direct gap absorption of 1μm thick ZnTe-epilayers grown on GaAs substrates by metalorganic chemical vapour deposition (MOCVD). Free ZnTe-layers were obtained by selective etching. The absorption coefficient was measured up to about 50000 cm^?1 in a diamand anvil cell in the temperature range from 115–300 K. The spectra near the direct gap E₀ are dominated by a sharp excitonic structure. Its change with pressure is evaluated by a model which allows to determine the pressure shift of the gap energy dE₀/dP and the change of the Rydberg energies of the excitons dR*/dP.^[1]     

Specific features in the temperature dependence of photoluminescence from CdTe/ZnTe size-quantized islands and ultrathin quantum wells

A study has been carried out of the temperature dependences of luminescence spectra on a large number of CdTe/ZnTe structures differing in average thickness, 〈L _z〉=0.25–4 monolayers (ML), and CdTe layer geometry (continuous, island type). The influence of geometric features in the structure of ultrathin layers on linewidth, the extent of lateral localization of excitons, their binding energy, and exciton-phonon coupling is discussed. It is shown that in island structures there is practically no lateral exciton migration. The exciton-phonon coupling constant in a submonolayer structure has been determined, Γ_ph=53 meV, and it is shown that in structures with larger average thicknesses Γ_ph is considerably smaller. Substantial lateral exciton migration was observed to occur in a quantum well with 〈L _z〉=4 ML, and interaction with acoustic phonons was found to play a noticeable part in transport processes. It has been established that the depth of the exciton level in a quantum well and structural features of an ultrathin layer significantly affect the temperature dependences of integrated photoluminescence intensity. Fiz. Tverd. Tela (St. Petersburg) 41, 717–724 (April 1999)     

Far-infrared quasi-local modes of ZnTe in CdTe

We report the very far-infrared absorption spectra of the mixed-crystals Cd_1-xZn_xTe for small x in the temperature range of 4.2K–150K and the wavenumber region of 20cm⁻¹–100cm⁻¹. The quasi-local mode induced by ZnTe in CdTe and CdTe-like 2TA two-phonon creations are observed, to be best of our knowledge, for the first time. The frequencies of the modes are estimated by using the mass-defect model combined with Green's functions calculations. Besides, the temperature dependence of the absorption peak is well explained in the light of the characteristics of the modes.     

Ti掺杂ZnTe体材料的优化光致发光光谱

针对光致发光光谱法研究ZnTe:Ti的困难,对包括激发能量、激发功率与激发光斑大小、水汽干扰和测量温度等实验条件进行了细致的优化.发现: (1)低于ZnTe禁带宽度的激发能量能给出相对强的光致发光光谱; (2) 水汽干扰既影响谱线的相对强度又增大谱线能量的测定误差; (3)相对强的激光聚焦有利于获得较好的光致发光光谱.可靠地观察到位于3903.5和3905.9cm^-1能量位置处的零声子光致发光谱线. 根据两谱线的能量间距和相对强度随 温度的变化关系,并借助于晶体场理论对四面体晶体场中 关键词： Ti掺杂 ZnTe 光致发光     

Optically detected electron resonance in phosphorus-doped ZnTe

Samples of ZnTe showing near gap edge luminescence predominantly due to exciton recombination at shallow neutral acceptors and donor- acceptor pair recombination have been investigated using optically detected magnetic resonance (ODMR). Emission polarization changes at 2.318 eV were observed due to magnetic resonance of electrons at g_e = + 0.401 ± 0.004. The observations are consistent with the donor trapped electron resonance resulting from microwave induced changes in donor-acceptor pair photoluminescence.