Optimization of F-doped SnO2 electrodes for organic photovoltaic devices

Fluorine-doped tin oxide (FTO) thin films have been investigated as an alternative to indium tin oxide anodes in organic photovoltaic devices. The structural, electrical, and optical properties of the FTO films grown by pulsed laser deposition were studied as a function of oxygen deposition pressure. For 400 nm thick FTO films deposited at 300°C and 6.7 Pa of oxygen, an electrical resistivity of 5×10⁻⁴ Ω-cm, sheet resistance of 12.5 Ω/□, average transmittance of 87% in the visible range, and optical band gap of 4.25 eV were obtained. Organic photovoltaic (OPV) cells based on poly(3-hexylthiophene)/[6,6]-phenyl-C₆₁-butyric acid methyl ester bulk heterojunctions were prepared on FTO/glass electrodes and the device performance was investigated as a function of FTO film thickness. OPV cells fabricated on the optimum FTO anodes (∼300–600 nm thick) exhibited power conversion efficiencies of ∼3%, which is comparable to the same device made on commercial ITO/glass electrodes (3.4%).     

Nonlinearities in the reflection and transmission spectra of the photonic bandgap heterostructures with n–i–p–i crystals

Nonlinear optical properties of photonic crystal heterostructures with embedded n–i–p–i superlattices are investigated. Self-consistent calculations of the transmission and reflection spectra near the defect mode are performed using the transfer-matrix method and taking into account the gain saturation. Analysis of features and output characteristics is carried out for one-dimensional photonic crystal heterostructure amplifiers in the GaAs–GaInP system having at the central part an active “defect” from doubled GaAs n–i–p–i crystal layers. The gain saturation in the active layers in the vicinity of the defect changes the index contrast of the photonic structure and makes worse the emission at the defect mode. Spectral bistability effect, which can be exhibited in photonic crystal heterostructure amplifiers, is predicted and the hysteresis loop and other attending phenomena are described. The bistability behavior and modulation response efficiency demonstrate the potential possibilities of the photonic crystal heterostructures with n–i–p–i layers as high-speed optical amplifiers and switches.      

Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature

A novel simple method of crystallization of hydrogenated amorphous silicon (a-Si:H) thin films is described. Namely, we studied a metal-induced crystallization enhanced by a dc electric field in sandwich p⁺–i–n⁺structures. The samples were fabricated from wide-bandgap a-Si:H with high hydrogen content (13–51 at. % H). Macroscopic islands of a-Si:H (up to ∼1 mm in diameter) in the region between upper (CrNi) and lower (ITO) contacts crystallize instantaneously when a sufficiently high dc electric field (≳10⁵ V cm^-1) is applied. The crystallization sets in at room temperature and ambient atmosphere and is spatially selective. A proposed microscopic mechanism of such an easy macroscopic crystallization consists in easy diffusion of Ni and/or Ni silicides (representing nucleation sites) through a dense network of voids in hydrogen-rich a-Si:H. Received: 30 November 2000 / Accepted: 3 May 2001 / Published online: 27 June 2001     

a-Si/SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> multilayered light absorber for solar cell

40 alternate a-Si/SiN _x multilayer are incorporated as an absorber layer in a p–i–n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN _x layers. The a-Si and SiN _x layers have thickness of ~3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of ~2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current–voltage (I–V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p–i–n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V _OC). The increment of bandgap energy in PL and high V _OC of the device is attributed to the quantum confinement effect (QCE).     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si

Thin films of W–B–N (10 nm) have been evaluated as diffusion barriers for Cu interconnects. The amorphous W–B–N thin films were prepared at room temperature via reactive magnetron sputtering using a W₂B target at various N₂/(Ar + N₂) flow ratios. Cu diffusion tests were performed after in-situ deposition of 200 nm Cu. Thermal annealing of the barrier stacks was carried out in vacuum at elevated temperatures for one hour. X-ray diffraction patterns, sheet resistance measurement, cross-section transmission electron microscopy images, and energy-dispersive spectrometer scans on the samples annealed at 500°C revealed no Cu diffusion through the barrier. The results indicate that amorphous W–B–N is a promising low resistivity diffusion barrier material for copper interconnects.     

Fabrication and characterisation of microscale air bridges in?conductive gallium nitride

Fabrication and electrical characterisation of microscale air bridges consisting of GaN heavily doped with silicon is described. These were made from GaN–AlInN–GaN epitaxial trilayers on sapphire substrates, in which the AlInN was close to the composition lattice matched to GaN at ∼17% InN fraction. The start of the fabrication sequence used inductively coupled plasma etching with chlorine chemistry to define mesas. In situ monitoring by laser reflectometry indicated an AlInN vertical etch rate of 400 nm/minute, ∼70% of the etch rate of GaN. Processing was completed by lateral wet etching of the AlInN in hot nitric acid to leave GaN microbridges supported between anchor posts at both ends. Deposition of Ti–Au contact pads onto the anchor posts allowed study of the electrical characteristics. At low applied voltages, vertical conduction through the undoped AlInN layers was minimal in comparison with the current path through the Si:GaN bridges. Typical structures showed highly linear current-voltage characteristics at low applied voltages, and had resistances of 1050 Ω. The observed resistance values are compared with the predicted value based on materials parameters and an idealised geometry. The microbridges showed damage from Joule heating only at current densities above 2×10⁵ A cm⁻².     

Study of optical properties and molecular structure of plasma polymerized diethylene glycol dimethyl ether

This paper deals with plasma polymerization processes of diethylene glycol dimethyl ether. Plasmas were produced at 150 mtorr in the range of 10 W to 40 W of RF power. Films were grown on silicon and quartz substrates. Molecular structure of plasma polymerized films and their optical properties were analyzed by Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy. The IR spectra show C–H stretching at 3000–2900 cm^-1, C=O stretching at 1730–1650 cm^-1, C–H bending at 1440–1380 cm^-1, C–O and C–O–C stretching at 1200–1000 cm^-1. The concentrations of C–H, C–O and C–O–C were investigated for different values of RF power. It can be seen that the C–H concentration increases from 0.55 to 1.0 au (arbitrary unit) with the increase of RF power from 10 to 40 W. The concentration of C–O and C–O–C decreases from 1.0 to 0.5 au in the same range of RF power. The refraction index increased from 1.47 to 1.61 with the increase of RF power. The optical gap calculated from absorption coefficient decreased from 5.15 to 3.35 eV with the increase of power. Due to its optical and hydrophilic characteristics these films can be applied, for instance, as glass lens coatings for ophthalmic applications.     

Laser acceleration of light ions from high-intensity laser-target interactions

A systematic theoretical study of laser-irradiated targets made of material with increasing atomic number has been performed. The formation of energetic light ions resulting from the interaction of an intense ultrashort pulse laser with thin planar targets is investigated theoretically with a two-dimensional relativistic electromagnetic particle-in-cell model. A common parameter, the areal electron density of the foil, can be used to describe qualitatively targets made of different material. By varying either the laser intensity or the target thickness we observe a gradual transition of various ion acceleration mechanisms from one into another. Light ions, such as H⁺, Li³⁺, C⁶⁺, and Al¹³⁺, can be accelerated to GeV energies with existing laser systems at a laser fluence of 10–20 J/μm².     

Limited volume thin film deposition on geometrically complicated substrates

In this paper we report a study on the elastic scattering of electrons by lithium and sodium atoms in the presence of circularly polarized resonant laser field within the framework of the two-state rotating wave approximation. The effect of laser on projectile electrons is described by Volkov states. The frequency of the laser field is chosen to match with the 2s–3p (3s–3p) transition frequency in lithium (sodium) atoms. The total and differential elastic cross sections with single photon exchange are calculated for intermediate energies (50–150 eV) and laser intensity (10⁷–10¹¹ W cm^-2). An erratum to this article can be found online at http://dx.doi.org/. An erratum to this article can be found at     

Low-energy ion emission from a xenon gas-puff laser-plasma X-ray source

We have measured low-energy ion emission from a gas-puff laser-plasma X-ray source. The ions may cause the degradation of the condenser mirror of the extreme ultra-violet projection lithography system. A 0.7 J in 8 ns Nd:YAG laser at 1.06 μm was focused onto the xenon gas-puff target with an intensity of ∼10¹² W/cm². The silicon (111) plates, placed at a distance of 32 mm from the laser-interaction region, were exposed with the xenon ions. The average ion energy was measured to be less than 50 eV with a Faraday-cup detector placed close to the silicon plates. The xenon deposition occurred in the silicon plates with a depth of less than 40 nm. The deposition density was measured with a quadrupole secondary ion mass spectrometer to be 10²¹ /cm³ after 1500 laser shots. The energy-conversion efficiency from the laser energy into the ions is ∼0.1%/4 π sr/shot. For the lithography system, if we can remove such ion bombardment completely using novel techniques such as electro-magnetic devices or gas flow curtain techniques, the lifetime of the condenser mirror will be extended significantly. Received: 20 November 2000 / Published online: 9 February 2001     

Nanocrystalline silicon thin-film transistors with 50-nm-thick deposited channel layer, 10 cm2V-1s-1 electron mobility and 108 on/off current ratio

Thin-film transistors were made using 50-nm-thick directly deposited nanocrystalline silicon channel layers. The transistors have a coplanar top gate structure. The nanocrystalline silicon was deposited from discharges in silane, hydrogen and silicon tetrafluoride. The transistors combine a high electron field effect mobility of ∼10 cm² V^-1s^-1 with a low ‘off’ current of ∼10^-14 A per μm of channel length and an ‘on’/‘off’ current ratio of ∼10⁸. This result shows that transistors made from directly deposited silicon can combine high mobility with low ‘off’ currents. Received: 28 May 2001 / Accepted: 30 May 2001 / Published online: 30 August 2001     

Hydrogen-induced-intrinsic transport in undoped microcrystalline silicon

It is demonstrated that microcrystalline silicon (μc-Si:H) of intrinsic character can be produced by post-growth atomic hydrogen treatment. Undoped μc-Si:H films with a dark-conductivity activation energy (E _a) of about 0.20 eV were grown by plasma-enhanced chemical vapor deposition, and then subsequently exposed to an atomic hydrogen plasma. The hydrogen treatment is shown to result in a gradual increase in the E _a with increasing treatment time, followed by saturation at about 0.57 eV, a value observed for truly intrinsic μc-Si:H films. In the saturated state, the dark conductivity is on the order of 10⁻⁷ S/cm. The dark conductivity prefactor is found to follow the Meyer–Neldel rule. It is proposed that charge transport takes place in amorphous-like tissue surrounding the crystalline grains. The results are attributed to the Fermi level shift due to a change in the gap state distribution.     

Polycrystalline silicon on glass for thin-film solar cells

Although most solar cell modules to date have been based on crystalline or polycrystalline wafers, these may be too material intensive and hence always too expensive to reach the very low costs required for large-scale impact of photovoltaics on the energy scene. Polycrystalline silicon on glass (CSG) solar cell technology was developed to address this difficulty as well as perceived fundamental difficulties with other thin-film technologies. The aim was to combine the advantages of standard silicon wafer-based technology, namely ruggedness, durability, good electronic properties and environmental soundness with the advantages of thin-films, specifically low material use, large monolithic construction and a desirable glass superstrate configuration. The challenge has been to match the different preferred processing temperatures of silicon and glass and to obtain strong solar absorption in notoriously weakly-absorbing silicon of only 1–2 micron thickness. A rugged, durable silicon thin-film technology has been developed with amongst the lowest manufacturing cost of these contenders and confirmed efficiency for small pilot line modules already in the 10–11% energy conversion efficiency range, on the path to 12–13%.     

Memory properties of a Ge nanocrystal MOS device fabricated by pulsed laser deposition

The charge–storage properties of Ge nanocrystal (Nc) memory devices with MOS structure have been studied. The Ge nanocrystals (Ncs) were prepared on a p-Si (100) matrix by means of pulsed laser deposition (PLD) combined with rapid annealing in the presence of Ar gas. The device is characteristic of better switching characteristics (the I _on/I _off>10⁵), low leakage current, which was attributed to the effect of Coulomb blockade preventing injection. A significant threshold-voltage shift of 0.85 V was observed when an operating voltage of 5 V was implemented on the device. The kind of hysteresis behavior in the double sweep suggests that the device has a good electrostatic control over the Ge Nc channel.     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

Real-time measurement of oxidation dynamics of sub-stoichiometric tungsten oxide films by pulsed laser deposition

In this study WO _x films were deposited by laser ablation of ultra-pure (5N) tungsten trioxide targets onto SiO₂ or silicon substrates at 250°C temperature, 100 mTorr oxygen partial pressure and 1×10⁻⁵ Torr vacuum. Surface chemical states and compositions of the deposits were determined by X-ray photoelectron spectroscopy. The results showed that deposits in oxygen partial pressure contain W⁶⁺ with x∼3.1, while vacuum-deposited films have different W states with various percentage distributions as W⁴⁺>W⁵⁺>W⁶⁺>W⁰, and x∼1. We used fast electrical resistance measurement as a probe to study the deposition process. Film resistance as a function of deposition time in vacuum revealed some microsecond fluctuations modulated on the time variation curve of electrical resistance. We attribute these data to surface absorption and desorption of oxygen during layer deposition. Finally, the effect of the laser beam on the target’s structure, surface morphology and chemical state was studied. Our results revealed that in spite of structural variation by laser irradiation, the O/W ratio remained about 3.     

Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Carbon-free SiO<Subscript>x</Subscript> films deposited from octamethylcyclotetrasiloxane (OMCTS) by an atmospheric pressure plasma jet (APPJ)

The deposition of carbon-free, silicon oxide (SiO_x) films with a non-thermal, RF capillary jet at 27.12 MHz at normal pressure is demonstrated. The gas mixture for film deposition is constituted of argon, oxygen and small admixtures of octamethylcyclotetrasiloxane (Si₄O₄C₈H₂₄, 0.4 ppm). Surface analysis of the deposited films reveals their exceptionally low carbon content. The XPS atom percentage stays at 2% and less, which is near detection limit. The parametric study reported here focuses on the optimization of the deposition process with regard to the chemical and morphological surface properties of the coating by varying oxygen feed gas concentration (0–0.2%) and substrate temperature (10–50 °C).     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.