Dislocation activity in single crystals of stannic iodide

Single crystals of stannic iodide (SnI₄) have been grown employing the controlled-reaction between SnCl₂ and KI solutions by diffusion process in silica gels. As-grown (111) surfaces of the crystals have been optically studied. Characteristic growth spirals and hopper growth patterns have been observed on them. By successively etching (111) surfaces in a 0.2 N HCl solution, it is established that the pits indicate the sites of dislocations in the crystals. This is further confirmed by comparing the etch patterns before and after chemically polishing (111) surfaces. The average dislocation in the SnI₄ crystals have been determined and found to be 7.3 × 10² cm⁻². Observations of polygonisations are described and the implications are discussed.     

Microstructures of Tin Iodide Single Crystals Grown in Silica Gels

Single crystals of tin iodide (SnI₂) have been grown in silica gels. A detailed microtopographical study of {100} faces have been described. Horizontal striations are predominant on these faces for most of the crystals, while few of them show vertical striations. The horizontal striations are associated with the two-dimensional nucleation theory whereas the vertical striations relate to the growth fronts. Growth layers modified by the presence of misaligned microcystals have been illustrated. The natural etch pits on {100} faces of the crystal are attributed to the dissolution of crystals in the acid set gel. In the light of these observations, the mechanism of the development and growth of these faces have been assessed and the implications are discussed.     

Microstructures of gel-grown ammonium hydrogen tartrate single crystals

Single crystals of ammonium hydrogen tartrate (AHT) have been grown in silica gels by employing the controlled reaction between ammonium chloride and tartaric acid. Transparent AHT crystals upto 24 × 4 × 3 mm³ in size have been grown at room temperature. Optical and electron-optical studies have been made on the various surface structures of {010} faces of the grown crystals. A variety of growth striations and growth hillocks have been observed. Growth layers modified by the presence of misaligned microcrystals have been illustrated. It has been suggested that two-dimensional nucleation, spreading and pilling up of growth layers is mainly responsible for the growth of these crystals and the implications are discussed.     

Effect of Mn(II) ions on the growth of ammonium oxalate monohydrate crystals from aqueous solutions: I. Growth habit and surface morphology

The effect of concentration of Mn(II) ions on the growth habit and the surface micromorphology of different as‐grown faces of ammonium oxalate monohydrate (AO) single crystals grown from aqueous solutions was studied at a constant temperature of 30 °C and predefined supersaturations up to 20%. It was observed that the growth habit and the surface morphology of the crystals strongly depend on the supersaturation used for growth and the impurity concentration in the solution. The experimental results were analysed in terms of connected nets determined from different projections of the structure of AO crystals. Analysis of the observations revealed that: (1) the directions of connected nets corresponding to basic growth units composed of single (NH₄)₂C₂O₄ · H₂O molecules are in excellent agreement with the low‐index crystallographic directions of the orientations of growth layers, (2) all faces appearing in the growth morphology of AO crystals are F faces, and (3) the {001} face growing from pure aqueous solutions is essentially a kinetically rough face but the presence of Mn(II) impurity leads to their appearance in the morphology due to increase in the strength of bonds of the connected nets composing the surface graph.     

Growth of Gallium Orthophosphate Single Crystals under Hydrothermal Conditions

Gallium orthophosphate (GaPO₄) single crystals have been grown from phosphoric acid solutions under hydrothermal conditions. The crystals have been studied in terms of twinning because of the strong effect of this structural defect on the piezoelectric properties. The growth rates of individual faces have been compared to each other by considering the dipyramidal habit of the grown crystals.     

Reducing Inversion Twinning in Single Crystal Growth of GaPO4

Gallium orthophosphate (GaPO₄) single crystals were grown by the reverse temperature gradient method from phosphoric acid solutions under hydrothermal conditions. Twins after (110) were studied by etching faces having been cut perpendicular to one of the twofold axes. Based on the determination of the twin boundary position as well as on the knowledge of the growth rates of different crystallographic forms, a few faces have been chosen to be quite promising for growing high‐quality GaPO₄ single crystals if they are offered at the referring seed crystal. From the characterization of the grown crystals conditions have been found, which may lead to the reduction of the inversion twin number during the growth process.     

Growth of big single crystals of Sr2YRu1‐xCuxO6 from high temperature solutions

Single crystals of Sr₂YRu_1‐xCu_xO₆ (x = 0 ‐ 0.4) have been grown from PbO‐PbF₂ based solutions in the temperature range 1150 – 1350°C. A silicon carbide heating element furnace (with a recrystallized alumina tube lining) in a vertical configuration was used to grow the crystals in platinum crucibles. Conditions for the stable growth of big crystals have been investigated. The morphology of the crystals containing Cu was found to change from octahedral to cube octahedral as the growth temperature is increased from 1150 to 1350°C. Crystals measuring up to 4.5 mm across and 2.5 mm thick have been grown from 1250°C. The incorporation of Cu into the crystals was ascertained by EDS and x‐ray diffraction analysis. A diamagnetic transition which increased in magnitude and temperature with x was observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of bismuth tri‐iodide platelets by the physical vapor deposition method

The work reports the growth of single BI₃ crystals with platelets habit. Platelets were grown by physical vapor deposition (PVD) in a high vacuum atmosphere and with argon, polymer or iodine as additives. Crystals grew in the zone of maximum temperature gradient, perpendicular to the ampoule wall. Crystals grown with argon as additive show a very shining surface, have hexagonal (0 0 l) faces, sizes up to 20 x 10 mm² and thicknesses up to 100 μm. They were characterized by optical microscopy and scanning electron microscopy (SEM). Dendritic‐like structures were found to be their main surface defect. SEM indicates that they grow from the staking of hexagonal unities. Electrical properties of the crystals grown under different growth conditions were determined. Resistivities up to 2 x 10¹² Ωcm (the best reported value for monocrystals of this material) were obtained. X‐ray response was measured by irradiation of the platelets with a ²⁴¹Am source of 3.5 mR/h. A comparison of results according to the growth conditions was made. Properties of the crystals grown by this method are compared with the ones measured for others previously grown from the melt. Also, results for bismuth tri‐iodide platelets are compared with the ones obtained for mercuric and lead iodide platelets. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth Characteristics of Mercuric Iodide Single Crystal

The HgI₂ single crystal with few large smooth faces, high quality and 360 g in weight has been grown by a new technique of modified vapour phase located point method, and the growth characteristics of HgI₂ single crystals have been investigated in detail. It is found by means of X-ray diffraction that the crystals grown with the c-axis parallel or perpendicular to the pedestal plane have both the prism faces {110}.     

Morphology of β-BaB2O4 (BBO) Crystals in Relation to its Structure and Growth Conditions

β-BaB₂O₄ (BBO) crystals with well-defined morphology have been grown from Na₂O solutions using the top seeded solution growth (TSSG) method. The crystal morphology in relation to its structure and growth conditions has been studied in detail on the basis of crystallography and crystal chemistry. It is found that the morphological characteristics are related to the orientations of structural unit (B₃O₆)^3— anion rings in the crystal. On the other hand, the growth parameters may greatly affect the appearance of faces of the crystal, but the crystals still generally take trigonal in outline and have a diagnostic character of point group 3m. The observed morphology is in disagreement with BFDH and PBC analyses and is explained from the incorporation of the growth units on the faces and facets. Since the incorporation rates of the growth units are different on different faces, the boule habits with well-defined morphology are formed.     

Direct Growth of Aggregates on {110} Faces of Cadmium Mercury Thiocyanate Crystals

New growth phenomena ‐ direct incorporation of aggregates have been observed on the {110} faces of cadmium mercury thiocyanate CdHg(SCN)₄ crystals by atomic force microscopy. These aggregates grow in two forms: some directly cover up the steps and forms new growth layers; while others are just incorporated at the step edges. These aggregates, which are mostly oriented along [111] direction, are formed by small columnar structural units. The aggregates have the similar structure of CdHg(SCN)₄ crystals and greatly vary in nature with the variation of solution supersaturation σ and growth time t. With the increase of σ the aggregates become larger, consistent with the variation of growth units dimension with the supersaturation; and with the increase of growth time the aggregates become more structurally substantial. These observations have led to a new understanding about the crystal growth.     

Studies of the Growth Habits of the AgGaSe2 Single Crystal

High quality AgGaSe₂ single crystals with 20 mm in diameter and 55 mm in length have been grown by the modified Bridgman technique and the growth habits of AgGaSe₂ single crystals have been investigated in detail. It is found that the shape of the growth ampoule affects greatly the nucleation and the growth of AgGaSe₂ single crystal. A new cleavage face (101) and the natural faces are observed in the as-grown crystals. For some cases, the growing direction is normal to the (316) face.     

Growth of ytterbium tartrate trihydrate crystals in silica and agar‐agar gels and their characterization

Single crystals of ytterbium tartrate trihydrate have been grown by gel method using silica and agar‐agar gels as media of growth. The medium of growth influences the morphology of grown crystals, silica gel yielding single and polycrystalline in the form of spherulites whereas agar‐agar gel leading to growth of single and twinned crystals. Materials grown as single crystals have been characterized by using optical and scanning electron microscopy (SEM), EDAX, XRD, FT‐IR, CHN and thermogravimetric techniques. The stoichiometry of the grown single crystals is suggested to be Yb(C₄H₄O₆) (C₄H₅O₆).3H₂O. The FT‐IR spectrum shows the presence of singly as well as doubly ionized tartrate ligands. Results of thermal analysis indicate that the material is thermally stable up to a temperature of 200 °C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Hydrothermal Liquid Phase Epitaxy of Gallium Orthophosphate on Quartz Crystal Substrates

Gallium orthophosphate (GaPO₄) layers for surface acoustic wave (SAW) and sensor applications have been grown on quartz crystal substrates with sizes of about 30 x 30 mm² by hydrothermal liquid phase epitaxy (HLPE). The growth of epitaxial GaPO₄ layers is difficult because of a strong tendency for twinning. Besides, a retrograde solubility and an intense chemical aggressiveness of the solution has to be considered. Nevertheless, we found an effective crystal growth technique to deal with these problems using large and qualitatively good substrate crystals of quartz. The most important step of the epitaxy is the formation of an interlayer between the quartz substrate and the GaPO₄ deposit. Epitaxial layers with thickness up to 500 μm were obtained and characterised by means of X‐ray techniques.     

Effect of flux composition on the morphology of KTiOPO<Subscript>4</Subscript> crystals

KTiOPO₄ crystals have been grown from flux of K₆P₄O₁₃ in the presence of K₂SO₄, Li₂SO₄, and Na₂SO₄ salts and V, Cr, Ni, Co, Cu, Mo, Ba, Ce, Er, and W impurities. The crystals grown are characterized by well-developed simple {100}, {011}, and {201} faces. In some cases, new ({111} and (031)) faces arise. Some distortion of crystals caused by their pulling in the [101] direction is observed.     

Growth,characterization and fabrication of n-WSe2 PEC solar cells

Single crystals of n-WSe₂ have been grown by the chemical vapour transport (CVT) technique, using Br₂, TeCl₄, and SeCl₄ as transporters. Crystal lattice parameters have been determined for all the crystals grown above with an X-ray diffractometer. The composition of the above crystals were examined by energy dispersive analysis of X-rays (EDAX). Optical and some electrical transport measurements are carried out to judge the semiconducting nature of the as-grown crystals. Photoelectrochemical (PEC) solar cells were frabricated by using these crystals as photoelectrodes and platinum grid as counter electrode in an aqueous iodine/iodide solution. Some of the PEC cell parameters were determined. The results thus obtained have been discussed in detail.     

Growth,Structural and Microtopographical Studies of Calcium Iodate,Monohydrate Crystals Grown in Silica Gel

Single crystals of calcium iodate, monohydrate [Ca(IO₃)₂, H₂O] have been grown by gel technique. Prismatic, prismatic pyramidal, needle shaped and hopper crystals were obtained. These crystals were also grown by doping impurities such as copper and iron. Kinetics of growth parameters was investigated. Structural analysis was carried out by using X‐ray powder diffraction method. Microtopographical study of the habit faces, such as prismatic and pyramidal, of as grown crystals was carried out. Some surface structures are reported. These crystals were etched by various etchants and appropriate etchant is reported.     

Impurity induced structural phase transformations in melt grown single crystals of lead iodide

Lead iodide is a wide‐band gap and highly resistive semiconductor considered to be a promising room temperature nuclear detector. The phenomenon of polytypism is posing interesting problems of phase transformations among its polytypic modifications and formation of polytypic admixture during growth due to native impurities. Transformations have also been observed even when the material is stored for few months that causes deterioration in functioning of the PbI₂ devices. Lead iodide has been purified and single crystals were grown using zone‐refining system. The observed phase transformations during growth and storage have been explained in the light of distortion of [PbI₆]^4‐ octahedron due to impurities present in the material and the known crystal structures of PbI₂. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and etching of calcite crystals

Single crystals of calcite (CaCO₃) have been grown by the method employed by GRUZENSKY , using an aquoeus solution of CaCl₂ and a solid (NH₄)₂SO₃, The chemical reaction takes place according to the following equation: CaCl₂ + (NH₄)₂SO₃ CaCO₃ + 2 NH₄Cl The crystals grown by this method are about 0.2 to 0.8 mm in edge dimensions. Synthetic calcite crystals have been cleaved along (100) planes and the cleavage surfaces have been studied by multiple beam interferometry. The interferograms have revealed that the cleavages are quite flat. The cleavage faces have also been chemically etched and the etch patterns studied optically. By etching a cleavage successively for three different periods it was found that the bottoms of the point-bottomed pits follow a linear etch path. By etching a cleavage pair, one face in one etchant and the other face in a different etchant and by comparing the etch patterns produced, before and after polishing a cleavage face it has been shown that the etch pits nucleate at the sites of dislocations in the crystal. The etch patterns have also been compared with those produced on the cleavage faces of natural crystals. The density of dislocations in the syntheitc calctie crystals was generally less than the density of dislocations in the natural calcite crystals. The implications have been discussed.     

RbxK1-xTiOPO4 Thin Films Grown on KTiOPO4 Substrates by Liquid Phase Epitaxy

The properties of Rb_xK_1-xTiOPO₄ thin films grown on KTiOPO₄ substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face was better. The reason for a structure inversion for films grown on the z⁻ face is discussed.