Incorporation concentration dependence of phosphorus in the deposition of silicon epitaxial layers from silane-phosphine-hydrogen mixtures

The empirical incorporation characteristic N with the phosphine input pressure (P) as the controlling variable and the phosphorus incorporation concentration ((14 < lg N<18)) as the controlled variable is theoretically explained by comparing the thermodynamic equilibrium pressures of the various phosphorous hydrides and the various molecular species of the phosphorus vapour in the Si P H system in their respective incorporation equilibria with regard to the phosphorus incorporation concentration. In the lower incorporation concentration range (lgN > 18) there is an almost total agreement of the values of the phosphine equilibrium pressure (PPH_j; j = 2; 3) and the phosphine input pressure. In the upper concentration range (lg N > 18) there is a close approximation of the equilibrium partial pressure of the dimeric phosphorous vapour (PP₂) to the phosphine input pressure. There is no marked effect of the conduction electron density in silicon at the deposition temperatures considered on the incorporation characteristic.     

The precipitation of sparingly-soluble metal ‘oxinates’ induction periods and nucleation rates

The precipitation of barium, strontium, calcium, magnesium, zinc, cadmium, lead, cobalt, nickel and copper 8-quinolinolates (‘oxinates’) was studied in buffer solutions (pHs from 10 to 4.5) at 22 °C: the metal cation and overall ‘oxinate’ with ‘oxine’ concentrations were varied from 0.0005 to 0.010 M (and saturation rations varied from 3 to 3.000). The induction periods, before the main growth surge, were measured at different metal oxinate concentrations (C) and saturation ratios S = (C)/S · P_r^1/3. Nucleation rates were determined from combined measurements of induction periods and final crystal numbers. Nucleation rates varied with saturation ratios according to the relation \documentclass{article}\pagestyle{empty}\begin{document}$ R_n = k_1 \cdot S^8 {\rm\ nuclei cm}^{ - {\rm 3}} {\rm sec}^{ - {\rm 1}} $\end{document} Induction periods decreased with increasing concentration and supersaturation; over the range t > 3.000 to < 1 sec, . Where t and t were factors that depended on nucleation rates and metal salt solubility. t values decreased and t values increased with decreasing solubility. Precipitation occurred through homogeneous nucleation. Low nucleation rates and prolonged induction periods in solutions of medium to high supersaturation were related to slow rate-determining stages in nucleus formation and to complex formation between metal cation and oxinate anion.     

Dependence of doping element incorporation on temperature in the chemical vapour deposition of epitaxial silicon (III). Empirical incorporation characteristic of the Si-P-H system

The shape of the empirical incorporation characteristic of phosphorus in epitaxial silicon, deposited from silane-phosphine-hydrogen mixtures, shows two branches with different incorporation dependences on temperature (incorporation enthalpies). In the lower phosphorus-concentration range (N < 10¹⁸) the experimentally determined value of incorporation enthalpy can be explained as a complex quantity, including the enthalpies of the two phosphorus hydrides PH₃ and PH₂, the latter of which is formed by the partial decomposition of phosphine (PH₃) at deposition temperatures. — In the upper phosphorus-concentration range (N > 10¹⁸) the incorporation equilibrium of the dimeric phosphorus molecules, formed by the nearly complete decomposition of phosphine, is reflected in the incorporation enthalpy of the empirical incorporation characteristic.     

Epitaxial growth of GaN on {1012} oriented sapphire in GaCl/NH3/He and GaCl/NH3/H2 systems

GaN epitaxial layers were grown on {101 2} sapphire substrates in the systems GaCl/NH₃/He and GaCl/NH₃H₂, respectively. The films obtained were investigated by light microscopy, RHEED method and electron-microscopical replica technique. The epitaxial relationship was found to be {101 2} // {112 0}_GaN; 〈112 0〉 // 〈101 0〉_GaN With respect to layer perfection the temperature range of 800 … 1060°C and growth rates ≧ 1 μm/min are the best growth conditions.     

Absorption and ionic conductivity of oxygen-containing SrF2 crystals

An absorption band at 3644 cm⁻¹ is caused by isolated OH⁻ ions. O⁻ ions cause an absorption band at 213 nm the oscillator strength of which is 0.020. Charge-compensation of O⁻ ions is effected by F⁻ ion vacancies (F). As for CaF₂ crystals there occur monomers and dimers of [O⁻ – F] complexes. The mass action constants of association of F with oxygen centres are K_AD = ⅓ exp (4.28 – 0.82 eV/kT) for [O⁻ – F], K_AT = 4 exp (17.4 – 1.25 eV/kT) for [2 O⁻ – F] and K_AQ = exp (4.2 – 0.89 eV/kT) for [2 O⁻ – 2 F].     

Density and mobility of anti-frenkel defects in SrF2 crystals

By fitting the theoretically calculated temperature-dependent conductivity σ to the measured dependencies log σT ÷ 1/T the following parameters have been determined: free formation enthalpy of anti-Frenkel defects g_AF = 2.05 eV – 6.35 kT; mobilities of F⁻ion vacancies F and interstitials F: v_νT = 600 exp (-0.70 eV/kT) cm² K/Vs, v_iT = 1.1 · 10⁴ exp (-0.93 eV/kT) cm² K/Vs. — The free association enthalpies of complexes consisting of single foreign ions (Sc³⁺, Y³⁺, La³⁺, Sm³⁺, Li⁺, K⁺, Na⁺, O⁻) and the charge-compensating defect were obtained. The vibration frequency of F⁻ ions in the neighbourhood of F and F is changed by a factor of 2.6 and 0.6, respectively.     

Strukturelle Umklapp-Vorgänge in metastabilen β1-Kupfer-Zink-Mischkristallen bei tiefen und höheren Temperaturen (I). Gitterdynamische Skizze1)

The quantity of the shear-modulus G′ = (c₁₁ – c₁₂)/2 is a measure for the probability of structural Umklapp-processes to occur in metastable β₁-Cu-Zn-solid solutions. Such processes take place, if G′ = G′(T, x) would fall below a critical limit, G′_crit, e.g. by lowering of temperature T or/and Zn-concentration x, because the Fermi-contribution to G′will sink in the 1^st and with him additional the Coulomb-contribution in te 2^nd case. Both ones are the authoritative stabilizing factors for β₁ and therefore specific fo its lattice-dynamical behaviour, especially in the longwavy range of thermoacoustic lattice-vibrations, by which the cooperative Umklapp-motion will escape. Umklapping can also be initiated by favourably oriented dislocations, is G′ would approach to G′_crit in their neighbourhood: G′_critG′(xM8), with xM8  Umklapp-concentration. This is possible by variation of x during isothermal reactions, in the course of whicht he β₁-matrix will heterogenize itself into Zn-poorer and -richer districts β and β (pre-diffusion by means of quenchy vacancies). Both kinds of districts, among which the latter ones will enhance their degree of stability, are joint together coherently. They build up a so called β /β -parquet. The parquet-bricks can reach a critical size, which is necessary that sufficient large atom-collectives can simultaneously be caused to an Umklapp-motion and to occupate new equilibrium positions by thermo-acoustic shear-waves (comparison with a sin-wave beeing changed to a zigzag-line). Only at higher temperatures the bricks come up to the critical size. Umklapping comes about only in the β -bricks, which turn by it to a transition lattice (β₂) with a structure similary to that of the lowtemperature-martensite β′′. After that β₂ changes to α-phase. The way β ⇒ α is marked by the following steps: prediffusion, Umklapping + dislocation, leading to β₂, and a further dislocation dissoziation, leading the atoms to the equilibrium positions in the α-lattice. The so stepped mechanism acts an nucleationmechanism of the α-phase. After the nucleation the α-nuclei grow at the cost of too much formed β (postdiffusion). By isothermal reactions at too low temperatures a mini-herterogenized state of the β₁-matrix will be caused comparable with coldhardening states of other alloys (Guinier-Preston-zones). A β₁-matrix in such a state is unable to isothermal Umklapping, so that α-crystals can be formed – provided that the mini-heterogenities are resolved by increasing of the reaction temperature.     

Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (IV). Incorporation of phosphorus in the Si-H-Cl-lP system

The lower temperature dependence of the phosphorus incorporation with the use of phosphine together with chlorosilanes (ΔH = −13 to −15 kcal/ mole) instead of silane (ΔH = −43 kcal/mole) is explained by introducing a special incorporation equilibrium of phosphine bound to the silicon surface. The source materials phosphorus trichloride and phosphorus pentachloride may be incorporated with this equilibrium.     

Paramagnetic centres in X-irradiated LiNaSO4 single crystals

The EPR and optical absorption spectra of paramagnetic centers produced by X-irradiation in LiNaSO₄ single crystals were investigated. 7 EPR lines are observed at room temperature and 6 more lines – at LNT. The angular dependences of line positions at LNT are studied and the principal g-factor values are defined. The comparison with published data permitted to assign six the most anisotropic lines to ion-radical SO with different orientations in the lattice; two lines to ion-radical SO; slightly anisotropic doublet line – to O ozonide ion; isotropic line with g = 2. 0045 – to ion radical SO.     

The Precipitation of Alkaline-Earth Metal Carbonate Powders from Aqueous Solution. Crystal Numbers and Final Sizes

The precipitations of magnesium carbonate trihydrate, basic magnesium carbonate and calcium, strontium and barium carbonates was studied from equivalent solutions of concentrations from 0.0005 M to 1M, at pHs from 10 to 7, by optical microscopy and other methods. Crystal growth started after induction periods: the precipitations of the more sparingly-soluble metal carbonates — mainly studied at medium to high supersaturation — were homogeneously nucleated while the magnesium carbonate trihydrate precipitations — studied at low supersaturations at pH ≦ 7.6 — were heterogeneously nucleated. The crystal forms and numbers of the final precipitates depended on the type and numbers of nuclei (and crystallites) formed during the induction periods. Crystal numbers generally increased with increasing initial mean metal carbonate concentration according to the relation N = N₁C_MCO3^β; β was 3 for the metal carbonate precipitations and β was 4 for the basic magnesium carbonate precipitations. N₁ values increased in the order basic MgCO₃ (at pH ≧ 9), or MgCO₃ · 3H₂O (at pH ≦ 7.6) < CaCO₃ < SrCO₃ < BaCO₃. The final crystal lengths then generally decreased, from maximum values, with increasing initial concentration according to the relation l_fin = l₁/C^γ, where γ was 0.7 and 1.0. For precipitation at any concentration and pH, smaller crystal sizes were generally obtained in precipitates from solutions of the metal carbonate of lower solubility.     

Investigations on electronically conducting oxide systems (XI) electrical conductivity and optical absorption of a -and c-Domain crystals BaVTiO3

BaVTiO₃ single crystals can be grown from a basic BaCl₂ flux. The electric conductivity was measured at a- and c-domain crystals and optical absorption as well as photoconductivity were ascertained at a-domain crystals using plane polarized light in dependence on direction. Properties and their anisotropy are discussed on the basis of their local relations in the ferroelectric host lattice and compared with the properties of BaNbTiTiO₃ single crystals described in the preceding communication.     

Liquidphasen-Epitaxie von Si-dotiertem AlxGa1−xAs

The liquidus and solidus isotherms of the quaternary phase diagram Ga—Al—As–Si have been estimated at 850 °C and N_Si = 0.04 and 0.1. Epitaxial layers were grown and the influence of silicon on the growth rate was investigated. Hall-effect measurements give informations on the dependence of the carrier concentration on the silicon content in the melt. The donor ionization energies vary from 32 to 69 meV and are diminished proportional to N.     

Irradiation-induced change of valence of Cr3+ ions doped in alkali sulphates

It is shown by means of investigation of both optical absorption spectra and Roentgen K-lines of chromium doped in LiKSO₄, LiNaSO₄, and Li₂SO₄ · H₂O crystals, that X-irradiation results in change of the impurity charge in a following way: Cr³⁺ + h → Cr⁴, Cr⁴⁺ + h → Cr⁵⁺.     

Impurity band conduction effects in liquid phase epitaxial Te-doped GaP grown from tin solution

GaP layers were grown by liquid phase epitaxy from tin solution on semi-insulating GaAs substrates with various amounts of Te added to the melt (x_Te = 10⁻⁴ …︁ 3 · 10⁻²). The Sn and Te concentrations in the layers were determined by chemical analysis as function of x. An analysis of the electrical measurements shows that the carrier transport in the layers is essentially determined by impurity band conduction effects.     

Calculation of the Fourier Coefficients of the Generalized Spherical Functions

Generalized spherical functions which are used in texture analysis may be developed into Fourier series. The coefficients a of this series may be expressed as a simple product of much smaller a number of other coefficients Q. This may greatly simplify the numerical calculation of these functions and hence also of the texture function itself.     

The influence of the direct quench and indirect quench to Ta > Th on the decomposition behaviour of an Al-2 at.% Zn-1 at.% Mg alloy

The decomposition behaviour of an Al-2.0 at.% Zn-1.0 at.% Mg alloy after direct quench (DQ) and indirect quench (IQ:T = 23 °C, t) to the ageing temperature T = 160 °C (above the temperature of the rapid homogeneous nucleation, T_h) was investigated by means of TEM and isothermal resistivity measurements. The precipitation density of the η-particles yields a maximum value at pre-ageing times about 10 min at T = 23 °C. To clear up the reason for that phenomenon a loop-formation and clustering model was introduced.     

Surface preparation of AB semiconductors (Cd3As2, Zn3As2, Cd3P2, Zn3P2) under ultra-high vacuum conditions

The UHV surface preparation of AB materials (crystals and thin films) has been monitored with XPS and AES. Clean and stoichiometric surfaces of AB crystals were prepared by means of low energy ion bombardment and subsequent low temperature annealing. Stoichiometric Cd₃As₂ and Zn₃P₂ thin films with very low amounts of C and O were deposited by the evaporation of bulk material in the UHV. The quality of prepared AB crystal and thin film surfaces was sufficient to carry out density of states investigations (UPS, RELS) with success.     

The Precipitation of Alkaline-Earth Metal Oxalate Powders from Aqueous Solution. Crystal Numbers and Final Sizes

The precipitation magnesium oxalate dihydrate, calcium oxalate monohydrate, strontium oxalate monohydrate and barium oxalate hemihydrate was studied from equivalent solutions of concentrations from 0.001 M to 0.5 M, at pHs from 7 to 6, by optical microscopy and other methods. Crystal growth started after induction periods: the precipitations were heterogeneously nucleated at low supersaturations and homogeneously nucleated at medium to high supersaturations. The crystal form and numbers of the final precipitates depended on the type and number of the nuclei (and crystallites) formed during the induction periods. Crystal numbers at medium to high supersaturation, increased with increasing initial mean metal oxalate concentrations according to the relation, N = N₁c; β was 5 for calcium oxalate precipitations and β was 6 for the other metal oxalate precipitations. The N₁ values increased in the order MgC₂O₄ · 2 H₂O < BaC₂O₄ · 1/2 H₂O < SrC₂O₄ · H₂O < CaC₂O₄ · H₂O. The final crystal lengths, in this supersaturation range, then decreased (from maximum values) with increasing initial concentrations according to the relation, l_fin = l₁/C_MOx^β, where γ was 1.3 to 1.6. For precipitations from solution of any concentration at any pH, smaller crystals were obtained in the precipitates of the metal oxalate of lower solubility.     

Growth and analysis of barium-sodium niobate crystals

The conditions of growth, monodomenization, and detwinning are considered in order to obtain optically perfect barium–sodium niobate crystals (BSN). Optical homogeneity and that of chemical composition are investigated. It is shown that possible variations of composition in a crystal's volume are below 1%. Thermal E and optical E_g° widths of the forbidden zone are determined in the absorption spectra.     

Dependence of the Electric Properties and the Positron Lifetimes on the Dopant Content in La-doped SrTiO3

The resistivity, the dielectric constant, and the positron lifetimes in La-doped SrTiO₃ have been measured for La content x of 0—10 at.%. It was found that with increasing x, the variations of the resistivity and the dielectric constant and the positron lifetime parameters are nonmonotonic. The positron experiments have shown that the La-doping induces mainly formation of Sr vacancies and variation of Sr vacancy configuration; the most probable configuration is the isolated Sr vacancies (V) as x < 0.5 at.%, the associated defects (La V) for 0.5 < x < 1 at.%, and the associated defects (2 La V) above x = 1 at.%. The results suggest that the variation of the resistivity can be regarded as variation of electron density, and the variation of the dielectric constant results mainly from variations of the space-charge polarizaion and Sr-vacancy concentration and configuration.