Exciton—Phonon Luminescence of Perfect and Doped Naphthalene Crystals

The structure of phonon side bands in luminescence spectra of local excitons is investigated both theoretically and experimentally. A gradual transition from a spectrum behaviour peculiar for deep impurity centers (with wide phonon side band) to that peculiar for low temperature intrinsic luminescence (the side band becomes split into several bands corresponding to long wave lattice phonons) is investigated depending on the local exciton level depth. Experimental investigations of deuteronaphthalene solutions are presented.     

Luminescence of crystals of divalent tungstates

Crystals of divalent tungstates are characterized by two main luminescence spectral ranges: a short-wavelength (blue) luminescence band in the range 390–420 nm and a group (often two groups) of longer wavelength (green) bands in the range 480–520 nm. For crystals of calcium, strontium, barium, cadmium, magnesium, zinc, and lead tungstates, it is shown that the wavelength corresponding to the maximum of the blue luminescence band (λ_max) correlates with the melting temperature (T_m) of these compounds. The position of the blue luminescence band is the same (in the range 510–530 nm) for crystals with different divalent cations. Annealing in vacuum and electron irradiation decrease the intensity of both blue and green luminescence bands but do not change the ratio of their maximum intensities. This circumstance suggests that vacancies serve as luminescence quenchers to a greater extent rather than facilitate the formation of emission centers responsible for a particular luminescence band.     

Luminescence of GeO2 glass, rutile-like and α-quartz-like crystals

The luminescence of GeO₂ rutile-like crystals was studied. Crystals were grown from a melt of germanium dioxide and sodium bicarbonate mixture. Luminescence of the crystal was compared with that of sodium germanate glasses produced in reduced and oxidized conditions. A luminescence band at 2.3 eV was observed under N₂ laser (337 nm). At higher excitation photon energies and X-ray excitation an additional band at 3 eV appears in luminescence. The band at 2.3 eV possesses intra-center decay time constant about 100 μs at 290 K and about 200 μs at low temperature. Analogous luminescence was obtained in reduced sodium germanate glasses. No luminescence was observed in oxidized glasses under nitrogen laser, therefore the luminescence of rutile-like crystal and reduced sodium germanate glass was ascribed to oxygen-deficient luminescence center modified by sodium. The band at 2.3 eV could be ascribed to triplet-singlet transition of this center, whereas the band at 3 eV, possessing decay about 0.2 μs, could be ascribed to singlet-singlet transitions. Both bands could be excited in recombination process with decay kinetics determined by traps, when excitation realized by ArF laser or ionizing irradiation with X-ray or electron beam. Another luminescence band at 3.9 eV in GeO₂ rutile-like crystal was obtained under ArF laser in the range 100-15 K. Damaging e-beam irradiation of GeO₂ crystal with α-quartz structure induces similar luminescence band.     

含氧空位SrTiO3晶体电子结构研究

运用CRYSTAL-09软件计算得到了完整和含氧空位的SrTiO3晶体的电子态密度分布、能带结构和电荷密度分布。本文先通过分析完整SrTiO3晶体的电子结构,确定晶体化学键的组成。通过分析含氧空位的SrTiO3晶体的电子结构,发现禁带中出现一条新的缺陷带,缺陷带属于Σ轨道。通过缺陷能级的分析,结果表明SrTiO3晶体中2.4 eV的发光带可能是由Σ*-Σ之间的跃迁产生。     

High-temperature lasing in ZnO microcrystallites

High-temperature studies of the luminescence and lasing spectra parameters of the main UV bands (spontaneous luminescence and lines of stimulated-emission mode structure) and the recombination band of electron-hole plasma in zinc oxide microcrystallites have been performed. ZnO microcrystallites of tetrapod morphology, characterized by type-II lasing (microlasers), have been chosen as objects of study [1]. The temperature behavior of a number of key parameters related to specific features of microlasing is investigated.     

Characterization and luminescence of a-Si:H:Cl films

a-Si:H:Cl films have been deposited by glow-discharge and characterized by infrared transmission, optical absorption and photoluminescence. The influence of growth parameters on the H and Cl content has been investigated. The luminescence spectra show that three different radiative transitions can occur, at 0.75, 0.95 and ～1.3 eV. These bands have been interpreted respectively in terms of the following recombinations: defect to defect, defect to band tail, band tail to band tail.     

Photoluminescence from deformed CaO crystals

The plastic deformation of CaO crystals produces the increase of luminescence band centered at 385 nm and 454 nm. The bands are excited with light of 350 nm and 275 nm respectively, and their relative increase depends on the kind of deformation applied to the crystal. The results are compared with previous cathodoluminescence observations.     

Photoluminescence study of annealing effects on CuI crystals grown by evaporation method

Cuprous iodide (CuI) is the ultrafastest inorganic scintillation crystal at present. But the low intensity of its ultrafast component luminescence limits the wide application of CuI at room temperature. In this paper, the photoluminescence (PL) characteristics of different quality CuI crystals before and after annealing in various conditions have been investigated in terms of peak position and peak intensity. The origin of different emission band peaked around 426 nm, 680 nm, 718 nm and 820 nm is discussed and the excitation spectra of two mainly emission bands is obtained. Meanwhile, the relative peak intensity of the ultrafast luminescence component to slow lumiescence component of CuI crystals has been studied with respect to the defect concentration of I vacancies. Especially, the method of improving the intensity of ultrafast compentent luminescence of CuI crystals is concluded. These results can provide an important reference for optimizing the luminescence performance of CuI crystals.     

柠檬酸燃烧法制备Gd3Ga5O12:Eu3+纳米晶及发光性质

以柠檬酸为燃烧剂,乙二醇为分散剂,采用燃烧法制备了Gd3Ga5O12∶Eu3+纳米晶.利用X射线衍射仪、扫描电镜和荧光光谱对样品的结构、形貌和发光性能进行了研究.XRD研究结果表明:合成的样品均为单一的Gd3Ga5O12晶相,纳米晶的一次性粒径分布在16～ 30nm.发射光谱和激发光谱的研究表明:主发射峰来自于Eu3+的5D0→7F1的跃迁;宽激发带主要来自于Eu-O电荷迁移带.讨论了柠檬酸和乙二醇用量对晶粒尺寸、品格常数、发射和激发强度的影响.结果表明:过量的柠檬酸和适量的乙二醇有利于晶体发育和发光强度的提高.     

SrCeO3:Sm3+红色发光粉的制备及发光性能

采用溶胶-凝胶法合成了SrCeO3∶Sm3+红色荧光粉,用XRD、SEM、FL分析表征了样品的结构、形貌及发光性能。研究了助熔剂H3BO3对其发光性能的影响。结果表明:样品为具有正交晶系结构的SrCeO3晶型,呈椭球型结构。荧光光谱测试结果表明:Sm3+掺杂的SrCeO3在紫外波段有两个吸收带,一是峰值位于320 nm左右的宽吸收带,归属于Ce4+→O2-的电荷迁移带,另一个为峰值位于408 nm的锐线吸收带,对应于Sm3+的6H5/2→4L13/2跃迁吸收;在波长408 nm的激发下,样品发红光,发射主峰位于601 nm,对应于Sm3+的4G5/2→6H7/2跃迁。样品的发光强度随着Sm3+和助熔剂H3BO3加入量的增加先增强,后减弱。当Sm3+的掺杂量为3mol%,H3BO3加入量为0.5 mol%时,发光强度最大。     

Luminescence of CaS and MnS nanocrystallites co-activated sol-gel derived silica xerogel

CaS and MnS nanocrystallites co-activated sol-gel derived silica xerogel has been prepared by sol-gel processing. Their photoluminescence characteristics have been evaluated and compared with those of the undoped silica xerogel. Two emission bands have been observed from the doped sample, one at 440 nm while the other at 580 nm. CaS and MnS nanocrystallites embedded in sol-gel derived silica xerogel show sharp emission band. The novel luminescence phenomenon is attributed to the luminescent centers of CaS and MnS in the silica xerogel.     

Recombination luminescence of oxygen-deficient centers in silica

The luminescence of silica glass, prepared by plasma chemical vapor deposition (PCVD) and quartz glass of type IV (trade mark KS-4V) methods, were studied while irradiated with pulses of ArF laser (193 nm) light in the range of sample temperatures between 10 and 300 K. The samples contain less than 0.1 ppm metallic and hydroxyl impurities. The samples synthesized by PCVD were of two kinds. The first one (amorphous) was as-deposited from plasma at a substrate tube temperature of ～1200 °C. The second one (fused) was prepared from the first by the tube collapsing with an external burner. In this process, a section of the substrate tube with the deposited glass was installed in a lathe and processed at a temperature of ～2100 °C during ～20 min until the tube was transformed to a rod. After such processing, the rod was cooled down to room temperature in air at an average rate of about 400 °C per min. The only observed luminescence possesses two broad bands, with not well defined position, one at 2.6–2.9 eV (a blue band) and another in the range of 4.4 eV (an UV band). There is a correspondence in luminescence properties between KS-4V silica and fused PCVD silica. Those bands have been attributed to oxygen deficient centers (ODC). No luminescence is observed in amorphous PCVD silica under irradiation with 193 nm laser light. So, formation of the sample by melting at least stimulates formation of ODCs at 193 nm. The blue band decays obeys to power law ～t^?1 and is detected in the range of time 10 ns to 300 μs. The UV band possesses a fast, practically repeating excitation pulse, and a slow component (～30 μs). The obtained new kinetics data are compared with known in literature for lone twofold-coordinated silicon having exponential decay for the blue band equal to 10 ms and 4.5 ns for the UV band. That shows the blue band of new studied samples under ArF laser possesses decay component faster and the UV band slower than that of the twofold-coordinated silicon center. This corresponds to the recombination process of luminescence excitation by laser. We propose a model of the processes as charge separation under excitation with creation of a nearest self-trapped hole and electron trapped on the twofold-coordinated silicon, modified by its surrounding atoms or ions. This pair is recombining then with luminescence.     

Photoluminescence of undoped and B-doped ZnO in silicate glasses

Photoluminescence of undoped and B-doped ZnO in silicate glasses was investigated by varying the concentration of ZnO (35–50 mol%) and B dopant (0–10 mol%) in the glass matrices. The broad and intense near band edge emissions were observed while the visible light emission was very weak. UV luminescence in all samples was red-shifted relative to the exciton transition in bulk ZnO and enhanced by decreased ZnO concentration due to higher degree of structural integrity and the lower aggregation degree of ZnO. Donor B dopant played the double roles of filling conduction bands to broaden band gap when its concentration was lower than 5 mol%, and emerging with conduction bands to narrow the gap when B dopant exceeded this value.     

Excitation pattern of the blue emission in Ge-doped silica

The luminescence of Ge-doped glassy SiO₂ has been investigated at room temperature using a deuterium lamp as the excitation source in the ultraviolet and vacuum ultraviolet energy range. Two emission bands are observed around 3 and 4 eV as the excitation increases from 4.5 to 8 eV. The peak shift and bandwidth broadening of the emission around 3 eV indicate the overlapping of several bands. We carried out a Gaussian best-fit approach of the detected spectra and extracted the excitation spectra of three distinct emission: a 2.9 eV band with two excitation channels at 4.7 and 5.3 eV and no contribution above 6 eV and the well-known composite β-band (3.1 eV). The latter is resolved into two Gaussian components whose excitation spectra present three main excitations around 5.1, 6.5 and 7.3 eV.     

UV,violet and blue‐green luminescence from RF sputter deposited ZnO:Al thin films

The mechanism of ultraviolet (UV), violet and blue green emission from ZnO:Al (AZO) thin films deposited at different radio frequency (r.f.) powers on glass substrates was investigated. The structure and surface morphology of AZO films have also been observed. The optical transmittance spectra shows more than 80% transmittance in the visible region and the band gap is found to be directly allowed. From the photoluminescence measurement, intense UV and blue green luminescence is obtained for the samples deposited at higher sputtering powers. The mechanism of luminescence suggests that UV luminescence of AZO thin film is related to the transition from near band edge to the valence band and the concentration of antisite oxide (O_zn) increases with increase in r.f. power which in turn increases the intensity of green band emission while the violet PL is due to the defect level transition in the grain boundaries of AZO films. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Peculiarities of photoluminescence excited by 157 nm wavelength F2 excimer laser in fused and unfused silicon dioxide

Photoluminescence (PL) spectra and kinetics of high purity amorphous silicon dioxide with ultra low hydroxyl content is studied under the excitation by F₂ excimer laser (157 nm wavelength) pulses. Materials synthesized in the SPCVD plasma chemical process are studied before and after fusion. Two bands are found in the PL spectra: one centered at 2.6–2.9 eV (a blue band) and the other at 4.4 eV (a UV band). Luminescence intensity of unfused material is found to increase significantly with exposure time starting from a very small level, whereas in fused counterpart it does not depend on irradiation time. Both bands show complicated decay kinetics, to which add exponential and hyperbolic functions. The UV band of the unfused material is characterized by decay with exponential time constant τ  4.5 ns and hyperbolic function t⁻ⁿ, where n = 1.5 ± 0.4. For the blue band the hyperbolic decay kinetics with n  1.5 extends to several milliseconds, gradually transforming to the exponential one with τ = 11 ± 0.5 ms. In fused glass relative contribution of the fast component to the UV band is small whereas for the blue one it is great, that allows one to more accurately determine the hyperbolic law factor n = 1.1 ± 0.1 typical for tunneling recombination. Simultaneous intracenter and recombination luminescence, the later occurring with the participation of laser radiation induced defects, add particular features to the decay kinetics. Spectra of the above luminescence processes are different. A less sharp position of bands is associated with the recombination luminescence. The origin of the observed PL features we attribute to the presence of oxygen deficient centers in glass network in the form of twofold coordinated silicon. Such centers being affected by network irregularities can be responsible for the recombination PL component. A great variety of network irregularities is responsible for centers’ structural inequivalence, which causes a non-uniform broadening of PL spectral and kinetic parameters.     

Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD

Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO₂-(1-x)·SiO₂ with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x < 1) films by a scanning focused CO₂ laser beam absorption band centered at 5 eV as well as two luminescence bands centered at blue (3.1 eV) and UV (4.3 eV) wavelengths arise, highlighting the formation of the ODCs. The excitation of unfused SPCVD films by an ArF (6.4 eV) excimer laser yields a luminescence spectrum with two bands typical for the ODCs, but with a faster decay kinetics. Intensities of these bands grow up with samples cooling down to a temperature of 80–60 K. Unfused films excited by the ArF laser also demonstrate luminescence due to recombination of a trapped charge resulted from the excitation of localized electron states of the glass network. In the unfused GeO₂ film luminescence related to a self-trapped exciton (STE) typical for GeO₂ crystals with α-quartz structure is observed. The observed STE luminescence can be indicative of the crystalline fraction availability in the film. Whereas GeO₂ crystals are known as not containing twofold coordinated germanium, a polycrystalline inclusion in the SPCVD GeO₂ film serves as a factor explaining the absence of any spectroscopic manifestation of this type of defects in it even after fusion. On the other hand, lack of STE luminescence in other unfused films with x < 1 testifies truly amorphous state of the matter in them.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.     

Photoluminescence dynamics in chalcogenide glasses and crystals

Time-resolved photoluminescence studies reveal distinct differences between the recombination processes in a chalcogenide glass and in its crystalline counterpart. Here the three luminescence bands of a-As₂S₃ are interpreted in terms of the recombination of an excition, a self-trapped exciton and a pair of electron- and hole-like small polarons. The two luminescence bands observed in the crystal are attributed to the recombination of two types of excitons composed respectively of a hole bound to a self-trapped electron, and a hole which is induced to self-trap in the presence of a self-trapped electron.