Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries

Transmission electron microscopy investigations are carried out on CdTe crystals grown in quartz ampoules in a temperature region (1020–1091 °C) near to the melting point of 1092 °C, by travelling heater method in quasi-closed and in sealed (at 0.135 Pa) volume, and by the Bridgman method from nearly stoichiometric melts. An original method for preparation of CdTe thin foil is reported. Two types of grain boundaries are observed: high-angle misoriented grain boundaries (more than ten degrees misorientation between adjacent grains) and low-angle misoriented grain boundaries (less than one degree misorientation between adjacent sub-grain). Both dislocations with Burgers vector b = a/6 〈112〉 and b = a/2 〈110〉 are present.     

NaCl(OH-)色心晶体制备中的固态缺陷化学反应

采用提拉法生长单晶,通过附加金属着色、淬火、室温和液氮温度光聚集等过程,制备了NaCl：(F2^ )H色心激光晶体。研究了NaCl(OH)晶体中色心形成的固态化学反应,结果表明在附加着色过程中发生了热形成、热聚集、热结合和可逆反应,在淬火过程中发生了热分解和可逆反应,在光聚集过程中,发生了光聚集反应、异构化反应和可逆反应。     

NMR Investigations on Di- and Tri-Azanaphthalenes Oriented in Liquid Crystals

Proton NMR spectra of 1,3-diazanaphthalene and 1,2,4-triazanaphthalene have been investigated in the nematic phase of three liquid crystals. The spectral analysis provided direct dipole-dipole couplings which have been used to derive the molecular structure. Geometry of the phenyl ring in both the molecules deviates from the regular hexagonal structure. Signs of the order parameter of the largest magnitude are opposite in liquid crystals with positive diamagetic anisotropies.     

Comparative characterization of boron-implanted silicon after pulse laser annealing along single traces by SEM (SE,EBIC) and TEM studies

(111) oriented n-type silicon wafers which were implanted with 2 × 10¹⁵ B⁺/cm² at 77 K and at an energy of 60 keV are laser annealed (Nd:YAG pulse laser) in air for mean laser powers between P = 1.8 W and P = 4.0 W. The comparative application of scanning electron microscopy (SE, EBIC) and high voltage transmission electron microscopy (HVTEM, 1000 keV) allows an estimation of the annealing quality in separated lines without overlapping. Values specifically ascertained by SEM in the SE contrast mode for the annealing threshold power P _th, the power range for optimal annealing ΔP ₀ and for the geometric width of the monocrystalline resolidification perpendicular to the direction of the specimen movement (and related to the spot diameter) at different laser pulse powers P agree completely with the results found in EBIC. At an optimal laser pulse power of P ₀ = 3.2 W HVTEM enables monocrystalline epitaxially resolidified areas free of defects to be identified in the same geometric width as that ascertained by SE and EBIC.     

Comprehensive characterization of CdTe and (Cd,Zn)Te single crystals by a chemical etchant

Using a known chemical etchant low- and high angle boundaries and lamellar twins can be seen on CdTe and (Cd, Zn)Te crystal ingots as a whole as well as on slices with naked eyes. Also the polarity of {111} samples can be determined in this way. Etch pits are produced on cut and polished surfaces independent of their crystallographic orientation. A new modified etchant was used to study the low angle subgrain structure on (111)Te surfaces.     

Compensation Mechanism in Vanadium and Gallium Doped CdTe and (Cd,Zn)Te

Vanadium and gallium doped CdTe crystals were grown from the vapour phase (modified Markov method) and (Cd_0.9Zn_0.1)Te: V from the melt (vertical Bridgman). The crystals were characterized by photoinduced current transient spectroscopy (PICTS), photoluminescence (PL) and time dependent charge measurements (TDCM). Transitions from different charge states (V²⁺/V³⁺) of the vanadium donor have been observed in the V-doped crystals by PICTS. A shallow donor level (dE = 0.068 eV) and the Ga A-center have been identified by PICTS and PL measurements in CdTe:Ga. In case of V-doping high resistivity is achieved all over the crystal while Ga-doping results in a high resistivity region only in the middle of the crystal. Calculation of the resistivity by means of a compensation model shows that for both dopants an additional not observed deep donor has to be assumed in order to describe the resistivity distributions.     

Defect Structure in Te-doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults

At temperatures above the brittle-to-ductile transition (490 °C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [001] direction: (i) twins and stacking faults (500 … 520 °C), (ii) slip zones of dislocations (≈ 550 °C) and (iii) dislocation cells (580 … 590 °C). In Part I quantitative details of the appearance of twins and stacking faults are given. Most frequently found were 30° partials in twins and stacking faults.     

IR-device Grade (Hg,Cd)Te Crystals Grown by a Modified Bridgman Method

Electrical and photoelectrical properties of IR-devices manufactured on (Hg, Cd)Te-wafers cut from single crystals grown by modified Bridgman method are reported and compared to those of devices made on THM-(Hg, Cd)Te. MIS-structures and photodiodes were used in order to investigate the different materials. The influence of material parameters and device technology respectively is involved in our discussion of device properties. The quality of modified Bridgman-(Hg, Cd)Te was found to be comparable to that of the THM-(Hg, Cd)Te. At T = 80 K and FOV = 60° background limited detectivity of photodiodes with a cut-off wavelength of λ_co = 10.7 μm was achieved.     

Liquid-Phase Epitaxy of (Hg,Cd)Te on CdTe Substrates by a Vertical Dipping Technique

Hg_1−xCd_xTe layers on CdTe substrates were grown from Te-rich melt solutions by a vertical dipping technique using a special quasi-closed system with ground-glass sealing. Results are good reproducibilities of the electrical properties after annealing in Hg-rich atmosphere (p77 ≈ 2 · 10¹⁶ cm⁻³ μ77 ≈ 500 cm² V⁻¹ s⁻¹) and of the x-value, respectively. A horizontal position of the substrate downwards to the melt solution yields, in difference to a vertical one, to homogeneous layer thicknesses. Short meltback steps before growth leads to sharper profiles of composition.     

Photoacoustic Spectroscopy of Defect States in Etched and Air-annealed CuInSe2 Single Crystals

Photoacoustic spectra of cleaved, polished and etched, and air-annealed n-type CuInSe₂ single crystals are measured at different frequencies between 30 and 312 Hz. The spectra related to the bulk of the crystals exhibit five structures due to defects that are also present in p-type crystals. Polishing and etching as well as subsequent air annealing at 100, 200 and 300 °C reveal rather complex changes of the defect equilibrium in the near-surface region of the crystals which include both relative concentration changes of existing defects and creation of new defects. The results for polished and etched crystals correspond to trends expected from etching induced local modifications of the composition and structure as revealed by electron spectroscopies and ion channeling. Air annealing is found to affect all existing defects and to create up to five new defects which cannot be explained in terms of the related point defect model proposed by CAHEN and NOUFI.     

KDP晶体体缺陷和损伤的观测方法研究

采用激光散射诊断法和显微镜相衬法对磷酸二氢钾(KH2PO4、KDP)晶体中的缺陷和损伤进行观测,发现散射法可以对晶体中的缺陷和损伤进行灵敏观测,并可以即时判断损伤;而显微镜相衬法可以对损伤形貌清晰观测,两种方法结合使用可以更好地观测晶体的缺陷和损伤并有助于了解晶体损伤的机理.     

Defect Structure in Te-doped GaAs Single Crystals after Plastic Deformation (II). Dislocation Slip and Cell Formation

At temperatures above the brittle-to-ductile transition (490 °C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [001] direction: (i) twins and stacking faults (500 … 520 °C), (ii) slip zones of dislocations (≈550 °C) and (iii) dislocation cells (580 … 590 °C). In Part II quantitative details of the appearance of slip and cell formation are given. Leading segments of gliding half loops are mainly of 60° type. Cell walls were formed by multiple slip of perfect dislocations.     

A Simple Synthesis,Characterization, and Properties of Poly(methyl methacrylate) Grafted CdTe Nanocrystals

A facile chemical synthesis of poly(methyl methacrylate) (PMMA) grafted CdTe nanocrystals (CdTe NCs) has been realized. Initially, CdTe NCs were prepared in a controlled manner using 2-mercaptoehanol (ME) as a capping agent. Then, 3-(trimethoxysilyl) propyl methacrylate having C?C double bonds were anchored with ME capped CdTe NCs through condensation reaction. Subsequently, AIBN initiated in situ free radical polymerization provided PMMA-g-CdTe nanohybrids. The FT-IR investigation suggested the formation of robust covalent bonding between CdTe NCs and the organic PMMA segment. XPS analysis also confirmed PMMA-g-CdTe nanohybrids. The physical structure and morphology of the as-prepared nanohybrids were studied by XRD and TEM. The thermal stability of the hybrids was enhanced in comparison with pure PMMA as indicated by TGA analysis. The UV-Vis absorption and photoluminescence measurements of the PMMA-g-CdTe nanohybrids showed their potential optical properties.     

Investigations on the Nucleation Thermodynamics of RbTiOXO4 (X = P or As) Crystals Grown from High Temperature Solution

The nucleation thermodynamics of RbTiOXO₄ (where X = P or As) family crystals crystallizing from high temperature solution using the phosphate and tungstate solvents have been studied. Using the regular solution model and classical nucleation theory the nucleation thermodynamical parameters like interfacial energy, chemical potential, free energy change, critical energy barrier and radius of critical nucleus have been calculated which leads to better understanding of the nucleation process. Comparative study has also been made to investigate the metastable zone width of the above family crystals grown from different fluxes.     

Si和GaAs衬底上的ZnTe、CdTe分子束外延材料的晶向倾角

本文采用X射线双晶衍射二次测量法对φ76mm Si(211)和GaAs(211)B衬底上生长的ZnTe和CdTe外延层的晶向倾角进行了测量,发现对于Si和GaAs衬底,外延层的[211]均绕外延层与衬底的[0-11]复合轴朝[111]倾斜,其晶向倾角与晶格失配呈线性关系;通过实际测量验证了在外延层探测到的[133]峰代表[211]关于[111]旋转180°的[255]孪晶向.     

Back-Scattered Electron Imaging of Microscopic Segregation in (Si,Ge) Single Crystals

Compositional inhomogeneities of (Si,Ge) single crystals grown by the radio frequency (RF) heated float zone technique have been studied using the back-scattered electron (BSE) mode of a scanning electron microscope. Numerical analysis of the images by Fast Fourier Transformation (FFT) showed that the number of spatial frequencies with substantial amplitudes is increased when investigating longitudinal sections of crystals containing dislocations instead of dislocation-free crystals. This can be attributed to different growth conditions in terms of super-cooling.     

Kinetic Investigations within the Transition Region from Polyhedral to Skeletal Growth Mode (V). Growth Kinetics of the Pyramidal Face of Zinc Single Crystals under Diffusion Conditions

The growth kinetics of the pyramidal face of zinc single crystals is studied in the presence of argon. The curves size vs. time provide evidence that smaller crystals grow in a kinetic regime and after reaching a certain critical size their growth continues in a diffusion regime. The growth kinetics of faces {101 } and {0001} are compared. It is established that the growth of both faces simultaneously changes from a kinetic to a diffusion growth mode. During the transition between the two regimes, however, loss of the morphological stability only of the smooth {0001} face is observed, while the {101 } face with macro steps formed on the surface acquires a skeletal shape after prolonged growth. It is shown that the appearance of morphological instability depends on the surface structure of the crystal faces.     

Growth Mechanism in Atomic Layer Epitaxy (II). A Model of the Growth Process of CdTe on CdTe (111) Substrates

A realistic model of CdTe growth by atomic layer epitaxy (ALE) has been proposed. This model is based on experimental studies concerning the isothermal re-evaporation rates of elemental Cd and Te deposits on the (lll)A and (lll)B surfaces of CdTe substrates, on a study of surface morphology and crystal structure of CdTe single crystal overlayers grown by ALE on CdTe(lll)B substrates under various crystallization conditions as well as on the existing theories related to the interaction of thermally activated atoms or molecules with hot solid surfaces. This model includes: (i) an existence of transition layers of both Cd and Te₂ species, intermediate between a chemisorbed and a bulk-like film, which create reaction zones 3–4 monolayers thick near the substrate surface, and (ii) partial re-evaporation of the first, chemisorbed monolayer of the deposited constituent elements.     

溶液降温法生长硒酸氢铷(RHSe)晶体

本文测定了硒酸氢铷(RHSe)在水中的溶解度～温度曲线,并采用溶液降温法,克服了RHSe晶体生长时易漂晶、爬晶等不利因素,生长出大尺寸硒酸氢铷(RHSe)单晶.对晶体生长条件、生长形态以及晶体的宏观缺陷作了初步的探讨.     

Growth of Triglycine Sulphate Single Crystals Doped by Cobalt (II) Phosphate

Modified TGS single crystals have been grown by doping with Cobalt (II) Phosphate in ferroelectric phase. The effects of different amounts of doping entities on the growth habit and P‐E hysteresis loop have been investigated. The experimental results show that while the spontaneous polarization P_s measured on variously doped crystals remains virtually unchanged, the coercive field values differ in dependence on the growth conditions and grown pyramidal features. The highest values of the coercive field E_c have been found to fall in the interval 800‐900 V/cm.