Exact treatment of exciton-polaron formation by diagrammatic Monte Carlo simulations

We develop an approximation-free diagrammatic Monte Carlo technique to study fermionic particles interacting with each other simultaneously through both an attractive Coulomb potential and bosonic excitations of the underlying medium. Exemplarily we apply the method to the long-standing exciton-polaron problem and present numerically exact results for the wave function, ground-state energy, binding energy and effective mass of this quasiparticle. Focusing on the electron-hole pair bound-state formation, we discuss various limiting cases of a generic exciton-polaron model. The frequently used instantaneous approximation to the retarded interaction due to the exchange of phonons is found to be of very limited applicability.     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

Theorie des stimulierten Raman-Effekts

We consider stimulated Raman emission in solids, placed in a plane laser beam external to the cavity. The Hamiltonian of the system of phonons, electrons and electromagnetic fields is derived within the framework of a generalized adiabatic approximation for electrons and nuclei. It contains terms due to nonlinear interactions between electrons and phonons. Because the usual time-dependent perturbation theory cannot describe coherence effects properly we turn toHeisenberg's equations of motion for the operators of photons, phonons and electron excitations. In order to solve these equations in the steady state we apply an iteration procedure. We start with the light waves which give rise to electron transitions. The electrons such excited create phonons which then react on the electrons. Finally the electrons are coupled again to the lightfield. This procedure yields besides the usual wellknown Raman process two main processes occurring in stimulated Raman emission: a coupled two step Raman process and a parametric process. In the first one two phonons are involved. If the linewidth of phonons is comparable to the phonon frequencies the non-resonant parts of the above processes also become important. In solving the set of coupled equations for the light amplitudes, obtained from the iteration procedure, we only consider terms due to the first Stokes, the first anti-Stokes and the laser line. We then find frequency shifts of these lines due to the stimulated emission which are of the order of the linewidth of photons if this linewidth is very much smaller than that of phonons as it is the case in solids. This means that the coupled two step Raman process is dominant, in good agreement with measurements ofChiao andStoicheff in calcite.     

Lowest optical excitations in molecular crystals: bound excitons versus free electron-hole pairs in anthracene

By solving the Bethe-Salpeter equation for the electron-hole Green function for crystalline anthracene we find the lowest absorption peak generated by strongly bound excitons or by a free electron-hole pair, depending on the polarization direction being parallel to the short or the long molecular axis, respectively. Both excitations are shifted to lower energies by pressure. The physical difference of these excitations is apparent from the electron-hole wave functions. Our findings are a major contribution to solve the long-standing puzzle about the nature of the lowest optical excitations in organic materials.     

Spatial correlation of an electron and hole in quasi-two-dimensional electronic system in a strong magnetic field and its relationship to the light-scattering tensor

The spatial correlation of light-generated electrons and holes in a quasi-two-dimensional electron gas in a strong magnetic field is investigated in an approximation linear in the intensity of the exciting light. The correlation is due to the interaction of the electrons and holes with longitudinal optical (LO) phonons. The theory permits calculating, on the basis of a special diagrammatic technique, two distribution functions of an electron-hole pair with respect to the distance between the electron and the hole after the emission of N phonons: first, the function determining the total number of pairs which have emitted N phonons and, second, the function related to the rank-4 light-scattering tensor in interband resonance Raman scattering of light. A special feature of the system is that the electron and hole energy levels are discrete. The calculation is performed for a square quantum well with infinitely high barriers. The distribution function and the total number of electron-hole pairs before the emission of phonons as well as the distribution function corresponding to two-phonon resonance Raman scattering are calculated. The theory predicts the appearance of several close-lying peaks in the excitation spectrum under resonance conditions. The number of peaks is related to the number of the Landau level participating in the optical transition. The distance between peaks is determined by the electron-phonon coupling constant. Far from resonance there is one peak, which is much weaker than the peaks obtained under resonance conditions. Zh. éksp. Teor. Fiz. 111, 2194–2214 (June 1997)     

Electron-induced rippling in graphene

We show that the interaction between flexural phonons, when corrected by the exchange of electron-hole excitations, may drive the graphene sheet into a quantum critical point characterized by the vanishing of the bending rigidity of the membrane. Ripples arise then due to spontaneous symmetry breaking, following a mechanism similar to that responsible for the condensation of the Higgs field in relativistic field theories, and leading to a zero-temperature buckling transition in which the order parameter is given by the square of the gradient of the flexural phonon field.     

Geometrical spin dephasing in quantum dots

We study spin-orbit mediated relaxation and dephasing of electron spins in quantum dots. We show that higher order contributions provide a relaxation mechanism that dominates for low magnetic fields and is of geometrical origin. In the low-field limit relaxation is dominated by coupling to electron-hole excitations and possibly 1/f noise rather than phonons.     

Competition between electron and phonon excitations in the scattering of nitrogen atoms and molecules off tungsten and silver metal surfaces

We investigate the role played by electron-hole pair and phonon excitations in the interaction of reactive gas molecules and atoms with metal surfaces. We present a theoretical framework that allows us to evaluate within a full-dimensional dynamics the combined contribution of both excitation mechanisms while the gas particle-surface interaction is described by an ab initio potential energy surface. The model is applied to study energy dissipation in the scattering of N(2) on W(110) and N on Ag(111). Our results show that phonon excitation is the dominant energy loss channel, whereas electron-hole pair excitations represent a minor contribution. We substantiate that, even when the energy dissipated is quantitatively significant, important aspects of the scattering dynamics are well captured by the adiabatic approximation.     

Band structure and many body effects in graphene

We have determined the electronic bandstructure of clean and potassium-doped single layer graphene, and fitted the graphene π bands to a one- and three-near-neighbor tight binding model. We characterized the quasiparticle dynamics using angle resolved photoemission spectroscopy. The dynamics reflect the interaction between holes and collective excitations, namely plasmons, phonons, and electron-hole pairs. Taking the topology of the bands around the Dirac energy for n-doped graphene into account, we compute the contribution to the scattering lifetimes due to electron-plasmon and electron phonon coupling.     

On the lifetime of certain excited states of chemisorbed atoms

For the determination of the ESD (electron stimulated desorption) cross section, the deexcitation process of the adsorbate plays an important role. In this paper we calculate the decay rate of the neutral adsorbate which is excited to the antibonding state, taking into account the electron-hole excitations in the metal. A similar technique which was used by Nozieres and Dominicis for the X-ray emission problem is applied for the summation of the diagram expansion. The lifetime of the antibonding state is estimated by the use of a simple model for the electron-hole excitation spectrum.     

Fast initial decay of molecular excitations at insulator surfaces

We investigate the initial decay of electron-hole excitations in a molecular layer after adsorption on an insulator substrate surface. This is done within ab initio many-body perturbation theory by calculating the time propagation of excited two-particle states. For a CO monolayer adsorbed on the MgO(001) surface we find very fast decay processes with lifetimes that are about 5 times shorter than the transfer of single charge carriers. This is due to a strong coupling of the molecular excitations to charge-transfer-exciton states between the adlayer and the substrate.     

电场对ZnCdSe-ZnSe应变超晶格光致发光的影响

n=1重空穴激子和施主-受主(D-A)对的光致发光在常压MOCVD生长的Zn0.85Cd0.15Se-ZnSe应变超晶格中被观测到了.激子和施主-受主对发光峰值位置随着增加正向偏置电压都相继产生蓝移和红移.这是由量子限制斯塔克效应引起的,究竟是蓝移还是红移则取决于由肖特基势垒引起的内部自建电场与外加正向电压引起的外电场之间的竞争.     

End-to-end diffusion coefficients and distance distributions from fluorescence energy transfer measurements: Enhanced resolution by using multiple donors with different lifetimes

We describe a method to improve the resolution of donor-to-acceptor distance distributions in molecules which are flexing on the timescale of the fluorescence lifetime. We measured the timedependent donor decays of two donor (D)-acceptor (A) pairs, where the donor lifetimes were substantially different. The donors were an indole residue (5.7 ns) and a naphthalene residue (24.4 ns). The same dansyl acceptor was used for both D-A pairs. The donor decays are complex due to both a distribution of D-A distances and D-A diffusion. Using the donor decay data for each D-A pair alone, it is difficult to resolve both the distance distribution and the D-to-A diffusion coefficient. However, these values are unambiguously recovered from global analysis of the data from both D-A pairs. The increased resolution from the global analysis is apparently the result of the complementary information content of the data for each D-A pair. The shorter-lived indole donor provides more information on the time-zero distance distribution because there is less time for D-A diffusion, and the longer-lived naphthyl donor is quenched to a greater extent than indole due to the longer time for diffusion-enhanced energy transfer. Simulations were also used to demonstrate the increased resolution of global analysis with different lifetime donors to obtain distance distribution parameters in the presence of D-A diffusion.     

Superfluidity near phase separation in Bose-Fermi mixtures

We study the transition to fermion pair superfluidity in a mixture of interacting bosonic and fermionic atoms. The fermion interaction induced by the bosons and the dynamical screening of the condensate phonons due to fermions are included using the nonperturbative Hamiltonian flow equations. We determine the bosonic spectrum near the transition towards phase separation and find that the superfluid transition temperature may be increased substantially due to phonon damping.     

Revised fine splitting of excitons in diamond

We study low-strain synthetic high pressure, high temperature diamonds by cathodoluminescence and observe novel fine structure in the free exciton and the boron-bound exciton emission. The basic spectral structure is a doublet with DeltaE approximately 11 meV common to both exciton spectra. This resolves the previously found inequivalence of free exciton ( approximately 7 meV) and bound exciton ( approximately 12 meV) fine splitting. It is argued that for a spin-orbit interaction Delta(0) much smaller than the excitonic binding ( E(X) approximately 80 meV) and the excitonic localization ( E(loc) approximately 51 meV) at the boron acceptor, the orbital momentum and the spin of the particles constituting the electron-hole pair are recoupled to form spin singlet and triplet exciton states as the elementary excitations.     

Evidence for a quasi-two-dimensional proton glass state in Cs5H3(SO4)(4); xH(2)O Crystals

We describe damping of hypersonic and ultrasonic longitudinal acoustic (LA) phonons in crystals of Cs 5H (3)(SO (4))(4);xH 2O (PCHS) between 100 and 360 K. The damping of LA phonons exhibits strong dispersion caused by relaxation processes in the region of transformation into the glasslike phase (T(g) approximately 260 K). Near T(g) the damping of ultrasonic phonons propagating in the basal plane reflects the cooperative freezing of acid protons. The damping of LA phonons propagating perpendicular to the basal plane can be fit by the Debye model and is due to the interaction between protons and LA phonons. This suggests that the proton glass state that is realized at T相似文献   

Influence of spontaneous emission and of finite phonon lifetime on Stimulated Raman Scattering

We study the influence of the spontaneous emission and of the damping of the molecular vibrations on Stimulated Raman Scattering in liquids starting from the Heisenberg equations for the laser wave, for the 1. Stokes wave, and for the molecular vibrations. The spontaneous emission is described by fluctuating Langevin forces. In the linearized case the Heisenberg equations are solved analytically. In order to investigate saturation effects the amplitude equations are transformed into generalized rate equations, which are solved numerically. To demonstrate the results they are plotted in several figures, showing the growth and the lineshape of the 1. Stokes wave, the ratio of Stokes photons and phonons and the saturation behaviour of the phonons and the Stokes and laser photons.     

Effect of the Coulomb scattering on graphene conductivity

The effect of the Coulomb scattering on graphene conductivity in field-effect transistor structures is discussed. Interparticle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into account in a wide range of gate voltages. It is shown that an intrinsic conductivity of graphene (purely ambipolar system, where both electron and hole densities exactly coincide) is defined by a strong electron-hole scattering. It has a universal value independent of the temperature. We give an explicit derivation based on the scaling theory. When there is even a small discrepancy in the electron and hole densities caused by the applied gate voltage, the conductivity is determined by both a strong electron-hole scattering and a weak external scattering: on the defects or phonons. We suggest that the density of the charged defects (occupancy of defects) depends on the Fermi energy to explain the sublinear dependence of conductivity on a fairly high gate voltage observed in the experiments. We also eliminate the contradictions between the experimental data obtained in the deposited and suspended graphene structures regarding the graphene conductivity. The text was submitted by the authors in English.     

High field effects in insulating CdF2: Gd crystals

CdF₂ crystals doped with Gd, before any conversion to semiconductor, exhibit at low temperatures electrical current and electroluminescence with d.c. voltage applied.The electrical conduction, attributed to electrons, is bulk limited and the i = i (V, T) characteristics are interpreted as a Poole-Frenkel conduction.The electroluminescence, due to intrinsic and impurity emission, is attributed to the impact process of field accelerated electrons, which give rise to electron-hole pair formation and impurity centre excitation.