Dependence of Williams domains width on threshold voltage

It is established that, in a given cell, the Williams domains width depends solely on threshold voltage, controlled by frequency and, in a lesser degree, by temperature.     

Dependence of the cavitation threshold on the ultrasonic frequency

A theoretical prediction of the dependence of the ultrasonic cavitation threshold for sonoluminescence on the acoustic frequency is presented. Data were obtained from the numerical solution of nonlinear oscillations of a single isolated gas-filled bubble in a viscous compressible liquid. Principal reasons for the increase of cavitation threshold with acoustic frequency and liquid viscosity are also briefly discussed.The author wishes to thank professor Ivo Hrazdira for permanent support of this work. All calculations were run on ICL 2950/10 computer of the Regional Computing Centre of the Czechoslovak Academy of Sciences, Brno.     

Dependence of surface coverage on pore geometry in dispenser cathodes

This paper shows that the surface coverage of Ba/BaO on tungsten is more complete when the activator is supplied via slotted pores rather than circular pores. Both theoretical and experimental evidence is given to support this contention. The effect is primarily a geometrical one, since the surface diffusion in the case of circular pores is two-dimensional, whereas the surface diffusion for slotted pores is linear. The contrast becomes less pronounced as the circular pore size decreases. For dimensions of the order of those found on cathode surfaces (e.g., 10 μ m diameter pores), a hexagonal array of circular pores can be optimized to produce an emitting area of 88% of the total, with a pore open area of about 11%. For slotted pores, the slot widths can be made arbitrarily narrow, consequently, the emitting area approaches 100% while pore evaporation losses are minimized. A slotted-pore cathode should, therefore, be capable of higher and more uniform current density with less barium dispensation. When the pore geometry is controlled, either for round holes or slots, the cathode should be less prone to space-charge-limited slump than those based on random sintered pores     

Dependence of ablation threshold and LIPSS formation on copper thin films by accumulative UV picosecond laser shots

The ablation threshold and Laser-induced periodic surface structure (LIPSS) formation on copper thin film were investigated using a picosecond laser (Nd:YAG laser: 266 nm, 42 ps, 10 Hz). We show that the ablation threshold varies with respect to the number of laser shots (N) on two different substrates. The single-shot ablation threshold was estimated to be close to 170 ± 20 mJ/cm². The incubation coefficient was estimated to be 0.68 ± 0.03 for copper thin films on silicon and glass substrates. In addition, morphology changes of the ablated regions, in the same spot area, were studied as a function of fluence and number of laser shots. An intermediate structure occurred with a mix of low spatial frequency LIPSS (LSFL), high spatial frequency LIPSS (HSFL) and regular spikes at a fluence F < 250 mJ/cm² and 1,000 < N ≤ 10.000 shots. LSFL was observed with a spatial period close to the irradiation wavelength and an orientation perpendicular to the laser polarization, and HSFL with a spatial period of ～120 nm and a parallel orientation. Lastly, the global relationship between the laser parameters (i.e. fluence and number of shots) and LIPSS formation was established in the form of a 2D map.     

Random telegraph noise on the threshold voltage of multi-level flash memory

We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation (ΔV_th) and the distribution due to RTN increase with the programmed level (V_th) of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.     

Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array

The impact of the variations of threshold voltage(Vth) and hold voltage(Vhold) of threshold switching(TS) selector in1 S1 R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a large number of Ag-filament TS selectors, Vthand Vholdare extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32×32 1 S1 R crossbar array under different bias schemes. The results indicate that Vthand Vholdvariations of TS selector can lead to degradation of 1 S1 R array performance parameters,such as minimum read/write voltage, bit error rate(BER), and power consumption. For the read process, a small Vhold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of Vholdand Vthincreases, the BER and the power consumption of 1 S1 R crossbar array under 1/2 bias,1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of Vholdfrom small to large value. A slight increase of Vthstandard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly.     

高功率激光表面大气击穿阈值的波长关系

通过对大气击穿的物理机制、低空大气中的自由电子及其寿命和电离机制进行讨论,给出了高功率激光大气击穿较为明晰的物理图像。并通过理论分析,给出了激光大气击穿阈值的波长关系,对给定波长激光的大气击穿阈值可以作出迅速的估值,是一种较为简捷的方法     

Impact of film thickness on threshold voltage of polysilicon TFTs

The threshold voltage is a key parameter in the silicon MOSFETS design and operation. In this paper, we study the factors that contribute to the changes of threshold voltage of thin-film LPCVD polysilicon transistors when varying the thickness of the active layer.The results show that the threshold voltage depends strongly on the film thickness. For high thicknesses, the threshold voltage is shown to be determined by the trapped holes at grain boundaries. The variation of this parameter with film thickness can be attributed to inter-granular trap states density variation in the film.For low thicknesses, a simple electrostatic model of the study structure, associated with a numerical method of solving 2D-Poisson's equations, shows that the changes of threshold voltage of polysilicon TFT depends on grain-boundary properties and charge-coupling between the front and back gates. Based on this consideration, the usual threshold voltage expression is modified. The results so obtained are compared with the available experimental data, which show a satisfactory match thus justifying the validity of the proposed relation.     

Effect of electrolyte temperature on the formation of self-organized anodic niobium oxide microcones in hot phosphate-glycerol electrolyte

Nanoporous niobium oxide films with microcone-type surface morphology were formed by anodizing at 10 V in glycerol electrolyte containing 0.6 mol dm⁻³ K₂HPO₄ and 0.2 mol dm⁻³ K₃PO₄ in a temperature range of 428-453 K. The microcones appeared after prolonged anodizing, but the required time was largely reduced by increasing electrolyte temperature. The anodic oxide was initially amorphous at all temperatures, but crystalline oxide nucleated during anodizing. The anodic oxide microcones, which were crystalline, appeared on surface as a consequence of preferential chemical dissolution of initially formed amorphous oxide. The chemical dissolution of an initially formed amorphous layer was accelerated by increasing the electrolyte temperature, with negligible influence of the temperature on the morphology of microcones up to 448 K.     

Dependence of lasing threshold power on excitation wavelength in dye-doped cholesteric liquid crystals

Relationship between threshold power and excitation wavelength has been investigated in distributed feedback (DFB) lasers using dye-doped cholesteric liquid crystals (CLCs). We found that the threshold shows strong dependence on the excitation wavelength. The excitation wavelength was varied over the whole absorption band of a commercial DCM dye, resulting in almost one-order of magnitude lower threshold power by the excitation at the higher energy tail than at the lower energy tail of the absorption band. We confirmed the existence of an optimum wavelength giving the lowest threshold power due to the competition between this effect and decreasing absorption at the higer-energy tail of the absorption band using a different dye, pyromethene 580.     

Near threshold track formation in glass

Sodium-calcium glass detectors were exposed to the Ne, Ar and Ge ions of continuous spectrum and after etching the incidence angle dependence of the detected tracks density was measured. The results confirm that Coulomb field effects at a large scale distance play an important role in the track formation.     

Time-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistorsTime-dependent degradation of threshold voltage in AIGaN/GaN high electron mobility transistors

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in A1GaN/GaN high electron mobility transistors （HEMTs） submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.     

Nonequilibrium mechanisms of weak electrolyte electrification under the action of constant voltage

The formation of space charge in weak electrolytes, specifically in liquid dielectrics, has been considered. An analytical solution is given to a simplified set of Nernst–Planck equations that describe the formation of nonequilibrium recombination layers in weak electrolytes. This approximate analytical solution is compared with computer simulation data for a complete set of Poisson–Nernst–Planck equations. It has been shown that the current passage in weak electrolytes can be described by a single dimensionless parameter that equals the length of a near-electrode recombination layer divided by the width of the interelectrode gap. The formation mechanism and the structure of charged nonequilibrium near-electrode layers in the nonstationary regime have been analyzed for different injection-to-conduction current ratios. It has been found that almost all charge structures encountered in weak dielectrics can be accounted for by the nonequilibrium dissociation–recombination mechanism of space charge formation.     

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

Low-voltage silicon(Si)-based light-emitting diode(LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor(CMOS) technology.The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration.The device size of low-voltage LED is 45.85×38.4(μm),threshold voltage is 2.2 V in common condition,and temperature is 27 ℃.The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.