利用倒梯矩形电子阻挡层降低深紫外激光二极管的电子泄露

为了有效降低深紫外激光二极管(DUV-LD)在有源区的电子泄露,提出了一种新颖的具有倒梯矩形的电子阻挡层(EBL)结构。通过使用Crosslight软件将矩形,梯矩形和倒梯矩形三种不同的结构进行仿真研究,比较三种结构器件的能带图、辐射复合率、电子空穴浓度、P-I以及V-I特性等,得出倒梯矩形EBL更能有效地抑制电子的泄露,从而改善了器件的光学和电学性能。     

M-Z型极化DANS聚合物电光波导强度调制器研究

研究了Mach-Zehnder型极化聚合物电光波导强度调制器的制备工艺.器件采用DANS (4-dimethylamino-4′nitro-stlibene)聚合物为电光波导材料,由电光波导层、上下介质缓冲层、上下金属电极层构成五层波导结构.对五层光波导各层之间的光学、化学以及微加工工艺的相互兼容性进行了深入研究.采用紫外光漂白方法制备出侧壁光滑的条波导,采用钨丝电晕极化方法对DANS聚合物波导进行有效极化,使其具有电光特性.通过优化器件制备工艺,研制出工作波长为1300 nm的M-Z型电光波导强度调制器原型器件.实验测得器件半波电压约为10 V,调制带宽约为1 GHz.     

退火质子交换平面波导型电光调制器的研究

基于双棱镜耦合m线技术提出了一种新型的平面波导强度调制器。由于质子交换平面波导的导波层在加上电场后折射率发生变化，从而引起棱镜耦合输出的m线强度的变化，实现电光调制。讨论了电极间隙宽度和导波层吸收对器件性能的影响。与其他类型强度调制器相比，这种调制器具有简单的电极结构，而且调制带宽可达40GHz以上。     

利用山形空穴存储层结构对深紫外激光二极管的性能优化

为了有效提高深紫外激光二极管的空穴注入效率和减少电子泄露,优化其性能,设计出了在基础矩形空穴存储层结构上改进后的山形空穴存储层和倒山形空穴存储层。使用Crosslight软件模拟仿真倒山形和山形空穴存储层结构的电子浓度、电子电流密度、能带图以及P-I特性曲线。结果显示山形空穴存储层激光器的光学和电学性能优于矩形和倒山形激光器,因此山形空穴存储层激光器能有效地增加有源区空穴注入和减少电子泄露,提高有源区载流子浓度和辐射复合速率,实现了激光器优越的光电性能。     

利用W形空穴阻挡层降低AlGaN基深紫外激光二极管的空穴泄露

本文设计了V形和W形的空穴阻挡层(HBL)结构,改善空穴在AlGaN基深紫外激光二极管(DUV-LD)n型区的泄露问题.使用Crosslight软件,将参考型矩形、V形和W形三种空穴阻挡层结构进行仿真研究,分别比较了三种不同结构的DUV-LD能带、n区空穴浓度、辐射复合率、电光转换效率、有源区载流子浓度等特性,结果表明,具有W形空穴阻挡层的DUV-LD拥有更高的空穴有效势垒高度、更高的辐射复合率、更低的空穴泄露以及更好的斜率效率,可以有效降低深紫外激光二极管在n型区的空穴泄露,提升其光学和电学性能.     

金属包覆极化聚合物光波导的优化设计

按极化聚合物光波导器件的五层（金属－缓冲层－波导层－缓冲层－金属）对称模型，对于其金属包覆层的光学吸收所引起的光波传播损耗进行了理论分析和计算，给出了在单模条件下波导层和缓冲层折射率及其厚度之间的关系曲线，计算确定出单模极化聚合物光波导参数。     

有源区掺杂的AlGaN基深紫外激光二极管性能优化

为了改善深紫外激光二极管的性能,本文提出了有源区量子势垒n掺杂、p掺杂和n-p掺杂三种结构.利用Crosslight软件,对原始结构和有源区掺杂的三种结构进行仿真研究,比较四种结构的P-I特性曲线、V-I特性曲线、载流子浓度、辐射复合速率和能带图.仿真结果表明,有源区量子势垒n-p掺杂结构的性能更优,其阈值电压和阈值电流分别为4.40V和23.8mA;辐射复合速率达到1.64×10²⁸cm^-3/s;同一注入电流下电光转换效率达到42.1%,比原始结构增加了3.9%;改善了深紫外激光二极管的工作性能.     

双面阶梯埋氧层部分SOI高压器件新结构

提出了双面阶梯埋氧层部分绝缘硅(silicon on insulator,SIO)高压器件新结构. 双面阶梯埋氧层的附加电场对表面电场的调制作用使表面电场达到近似理想的均匀分布, 耗尽层通过源极下硅窗口进一步向硅衬底扩展, 使埋氧层中纵向电场高达常规SOI结构的两倍, 且缓解了常规SOI结构的自热效应. 建立了漂移区电场的二维解析模型, 获得了器件结构参数间的优化关系. 结果表明, 在导通电阻相近的情况下, 双面阶梯埋氧层部分SOI结构击穿电压较常规SOI器件提高58％, 温度降低10—30K. 关键词： 双面阶梯 埋氧层 调制 自热效应     

一种温度不敏感型阵列波导光栅的研究

研究了的一种新型温度不敏感型阵列波导光栅(AWG)。该新型温度不敏感型阵列波导光栅的波导采用混合材料的波导结构，该混合材料波导通过在石英波导芯层上旋涂聚合物材料的上包层，达到改变波导温度特性的目的，使得阵列波导光栅的温度敏感性降低。通过理论分析和有限差分方法研究了其中两种结构：三层混合材料波导构成的阵列波导光栅和四层混合材料波导构成的阵列波导光栅，计算了该新型温度不敏感型阵列波导光栅的温度特性。结果表明，在一定的设计下，温度变化0～50℃时，这两种温度不敏感型阵列波导光栅的最大波长漂移量小于0．03nm，不到无温度控制时常规阵列波导光栅最大波长漂移量的4％。     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

Effectiveness of inserting an In Ga N interlayer to improve the performances of In Ga N-based blue-violet laser diodes

Electron leakage still needs to be solved for In Ga N-based blue-violet laser diodes(LDs), despite the presence of the electron blocking layer(EBL). To reduce further electron leakage, a new structure of In Ga N-based LDs with an In Ga N interlayer between the EBL and p-type waveguide layer is designed. The optical and electrical characteristics of these LDs are simulated, and it is found that the adjusted energy band profile in the new structure can improve carrier injection and enhance the effective energy barrier against electron leakage when the In composition of the In Ga N interlayer is properly chosen. As a result, the device performances of the LDs are improved.     

Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer

To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers,an inverse-trapezoidal electron blocking layer is designed.Lasers with three different structural electron blocking layers of rectangular,trapezoidal and inverse-trapezoidal structures are established.The energy band,electron concentration,electron current density,P-I and V-I characteristics,and the photoelectric conversion efficiency of different structural devices are investigated by simulation.The results show that the optical and electrical properties of the inversetrapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures,owing to the effectively suppressed electron leakage.     

Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (Al_xGa_1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode. PACS 42.55.Px; 73.40.-c; 78.20.Bh     

Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure

<正>In this study,the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically.The energy band diagrams,electrostatic field near the last quantum barrier,carrier concentration in the quantum well,internal quantum efficiency,and light output power are systematically investigated.The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction.These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.     

Asymmetric multiple-quantum-well laser diodes with wide and flat gain

Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.     

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In_(0.02)Ga_(0.98)N/GaN or u-In_(0.02)Ga_(0.98)N/Al_xGa_(1-x)N(0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor(OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In_(0.02)Ga_(0.98)N/GaN/Al_(0.05)Ga_(0.95)N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally,the output light power under an injecting current of 120 mA is improved to 176.4 mW.     

锡基钙钛矿太阳能电池载流子传输层的探讨

锡基钙钛矿太阳能电池可避免铅元素对环境带来的污染,近年来已成为光伏领域的研究热点.本文以SCAPS-1D太阳能电池数值模拟软件为平台,对不同电子传输层和不同空穴传输层的锡基钙钛矿太阳能电池器件的性能进行数值仿真对比,从理论上分析不同载流子传输层的锡基钙钛矿太阳能电池的性能差异.结果显示,载流子传输层与钙钛矿层的能带对齐对电池性能至关重要.电子传输层具有更高的导带或电子准费米能级以及空穴传输层具有更低的价带或空穴准费米能级时,对电池输出更大的开路电压有促进作用.另外,当电子传输层的导带高于钙钛矿层导带或钙钛矿层的价带高于空穴传输层的价带时,钙钛矿层与载流子传输层界面形成spike势垒,界面复合机制相对较弱,促使电池获得更佳的性能.当Cd0.5Zn0.5S和MASnBr3分别作为电子传输层和空穴传输层时,与其他材料相比,获得了更优的输出特性:开路电压Voc=0.94 V,短路电流密度Jsc=30.35 mA/cm^2,填充因子FF=76.65%,功率转换效率PCE=21.55%,可认为Cd0.5Zn0.5S和MASnBr3是设计锡基钙钛矿太阳能电池结构合适的载流子传输层材料.这些模拟结果有助于实验上设计并制备高性能的锡基钙钦矿太阳能电池.     

一种由自由电子能带模型计算费米能级的方法

对面心立方（fcc)、体心立方（bcc)和六角密堆积（hcp)三种不同结构的晶体,在假设它们的原胞中包含8个价电子并将价电子近似为自由电子的情况下,采用“自由电子气理论”和“自由电子能带模型”,研究其根据费米球确定的费米能级EF与根据自由电子能带模型计算的平均键能Em。研究结果表明,由自由电子能带模型计算所得3种不同结构晶体（因而电子密度也不一样）的平均键能Em等于各自自由电子系统的费米能级EF。平均键能Em是我们在异质结带阶理论计算中建议的一种参考能级,研究结果在深化对平均键能Em物理实质认识的同时,提供了一种借助于自由电子能带模型计算自由电子系统费米能级EF的新方法。