Investigation of non-diamond carbon phases and optical centers in thermochemically polished polycrystalline CVD diamond films

Polycrystalline chemical vapor deposition (CVD) diamonds films grown on silicon substrates using the microwave-enhanced CVD technique were polished using the thermochemical polishing method. The surface morphology of the samples was determined by optical and scanning electron microscopes before and after polishing. The average surface roughness of the as-grown films determined by the stylus profilometer yielded 25 μm on the growth side and about 7 μm on the substrate side. These figures were almost uniform for all the samples investigated. Atom force microscopic measurements performed on the surface to determine the average surface roughness showed that thermochemical polishing at temperatures between 700 °C and 900 °C reduced the roughness to about 2.2 nm on both the substrate and growth sides of the films. Measurements done at intermittent stages of polishing using confocal micro-Raman spectroscopy showed that thermochemical polishing is accompanied by the establishment of non-diamond carbon phases at 1353 cm⁻¹ and 1453 cm⁻¹ at the initial stage of polishing and 1580 cm⁻¹ at the intermediate stage of polishing. The non-diamond phases vanish after final fine polishing at moderate temperatures and pressures. Photoluminescence of defect centers determined by an Ar⁺ laser (λl_exct= 514.532 nm) showed that nitrogen-related centers with two zero-phonon lines at 2.156 eV and 1.945 eV and a silicon-related center with a zero-phonon line at 1.681 eV are the only detectable defects in the samples. Received: 26 July 1999 / Accepted: 15 November 1999     

Deposition of Diamond-like Carbon Films using Graphite Sputtering in Neon Dense Plasma

This paper reports the deposition of diamond-like carbon (DLC) films on Si <100>, using a low energy (1.45 kJ) dense plasma focus assisted sputtering of graphite insert at the tip of the tapered anode. The substrates are placed in front of the anode at different axial and angular positions and are exposed to multiple focus shots. The information regarding the DLC structure is acquired by using Raman spectroscopy. The spectra are characterized by two broad bands known as “G-band” and “D-band”. The results point towards the formation of DLC films with both sp³ (diamond like) and sp² (graphite like) domains. In X-ray diffraction (XRD) pattern, no additional peak is observed except a peak at 2θ = 69° which corresponds to the silicon (Si) substrate. The intensity of Si peak is reduced after treatment indicating the deposition of amorphous carbon. Scanning electron microscopy (SEM) results demonstrate that the smoothness of the film increases with increasing the substrate angular positions with respect to the anode axis. Energy dispersive X-ray (EDX) analysis reveals that the films deposited at lower axial and angular positions are thicker which is complemented by the cross-sectional views of the films.     

Comparison of the hole mobility in undoped and boron-doped polycrystalline CVD diamond films

The drift mobility of nonequilibrium holes injected in undoped polycrystalline diamond films was determined, by a transit-time technique, as ca. 10⁻³ cm²/(V s). This hole mobility is three orders of magnitude lower than the “equilibrium” mobility in boron-doped diamond films [0.1–1 cm²/(V s)], determined from the films' dc conductivity. This difference is explained by the effect of a nonequilibrium charge carrier trapping during the carrier transport in polycrystalline diamond. Received: 3 December 1997 / Accepted: 9 April 1998     

The use of monodispersed colloids in the polishing of copper and tantalum

The properties of abrasive particles play a significant role in chemical mechanical polishing (CMP) of metal and dielectric films in semiconductor device manufacturing. This study investigates the effects of the particle size, shape, and hardness of abrasives on the polishing of copper and tantalum films in the presence of different slurry chemistries. Well-defined dispersions of uniform particles, including spherical silica of varying diameters, hematite of different shapes, and hematite cores coated with silica of different thicknesses, were prepared and used to polish blanket films of Cu and Ta. It was shown that the total surface area of the solids in the slurry controlled the rate of material removal by pure silica for both Cu and Ta, while the surface quality of the polished films was better when higher silica content was used. The shape or the aspect ratio of hematite particles had a minor effect on the removal rate. In contrast, when hematite particles coated with silica were employed in the polishing of Cu and Ta, the polish rate decreased with increasing thickness of the shell.     

Sonoelectrochemistry at highly boron-doped diamond electrodes: silver oxide deposition and electrocatalysis in the presence of ultrasound

The use of boron-doped diamond has a considerable impact in electrochemistry owing to the wide potential range accessible, low background currents, extreme hardness, and the ease of chemical modification of diamond surfaces. It is shown here that, although the electrodeposition of silver metal is known to yield very poorly adhering films with a poor electrical contact, a silver oxysalt deposit formed on anodically pre-treated diamond surfaces adheres strongly with good electrical contact. The deposit is stable even in the presence of ultrasound. Voltammetric and XPS studies reveal that the silver oxide deposit, in contrast to the silver metal deposit, is efficiently stripped from the diamond surface by applying a sufficiently negative potential. The silver oxysalt Ag₇O₈NO₃, deposited onto two types of boron-doped diamond electrodes, a 50 μm thick polycrystalline thin film deposited on a tungsten substrate and a polished free standing diamond plate, is shown to act as an electrocatalyst for oxygen evolution and for the oxidation of toluene. This development opens up the possibility of boron-doped diamond being applied as an inert and conducting substrate material for a wide range of oxidic materials, which can then be utilised as active electrocatalysts at high applied potentials. Received: 17 March 2000 / Accepted: 10 April 2000     

In situ UV-Vis and ex situ IR spectroelectrochemical investigations of amorphous and crystalline electrochromic Nb2O5 films in charged/discharged states

Niobium oxide (Nb₂O₅) films and powders have been obtained via the sol-gel route from an NbCl₅ precursor. XRD spectra revealed that films with pseudohexagonal (TT-phase) and orthorhombic (T-phase) structure were formed at 500  °C and 800  °C, respectively, while at 300  °C films were amorphous. Infrared (IR) and Raman spectra of powders and films of Nb₂O₅ in different polymorphic forms were detected, and vibrational band assignments were made. Electrochromic properties of amorphous films and films with the TT-phase were established from in situ ultraviolet visible (UV-Vis) spectroelectrochemical measurements and correlated with ex situ IR transmission spectra of charged films. Ex situ IR spectra revealed that charging of amorphous films is accompanied by variations of the Nb-O stretching mode intensity, while, for films with the TT- and T-phase, splitting of the Nb₃-O stretching modes and the appearance of polaron absorption were noted with Li⁺ ion insertion. Ex situ X-ray diffraction (XRD) spectra of charged films with the TT-phase showed changes of the unit cell dimensions with charging. The influence of the polaron absorption on the ex situ near-grazing incidence angle (NGIA) IR reflection-absorption spectra of charged/discharged films is discussed in detail. Received: 21 August 1997 / Accepted: 9 October 1997     

Quantitative determination of large structures by small-angle light scattering

A new small-angle light scattering camera has been developed. In contrast to conventional detection the present system is based on a recently developed two-dimensional charge-coupled-device chip made by Thomson (France). The advantage of this chip is its excellent linear response and very low dark signal even at room temperature. The best linearity was obtained by leading each pixel signal through the same amplifying system. The optical system covered a diffraction angular region from about 1° to 15° (q = 0.2–2.6 μm⁻¹). The camera was calibrated with grids and pinholes and was tested with polymer latex particles in solution and with spherulites from polymer films. Received: 06 December 1999 Accepted: 04 February 2000     

NIR- and VIS-raman spectroscopy of CVD diamond films

Raman spectroscopy is a widely used method for the analysis of CVD diamond layers, because it enables to distinguish between different carbon phases, such as diamond, graphite, amorphous carbon and nanocrystalline carbon, which are all commonly present in CVD diamond films. A comparison of visible Raman spectroscopy and near-infrared Raman spectroscopy applied to CVD diamond layers on various substrates (Si, SiAlON, Au, Pd, Mo, W and cemented carbides) has been carried out with the result that visible Raman spectroscopy can be preferably used for characterizing the diamond quality, but for the detection of non-diamond carbon phases NIR-Raman spectroscopy exhibits certain advantages. The NIR-Raman spectra of diamond on silicon substrates are interfered by thermal activation of the Si.Dedicated to Professor Dr. Dr. h.c. mult. J.F.K. Huber on the occasion of his 70th birthday     

PIXE Spectroscopy for Determination of Volatile Corrosion Inhibitor Concentration in Anticorrosion Polymer Films

Summary. Anti-corrosion polymer films used for 0 to 6 years were investigated to determine the type and content of volatile corrosion inhibitors (VCI) and how long the films emit it to protect the metal surface encased by the film. By FTIR and DSC low density polyethylene (LDPE) was identified as the polymer carrier. Particle induced X-ray emission (PIXE) spectroscopy of anti-corrosion polymer films revealed significant concentration of molybdenum implying that corrosion inhibitor was molybdate based. The films were divided into three groups according to different rate of the VCI concentration decrease with increasing age. The division of films into groups and diffusion of VCI was confirmed by significant decrease of Mo content determined by PIXE spectroscopy after accelerated ageing in vacuum at 50°C. It was concluded that films with initial concentration of Mo above 6000 ppm emit VCI for at least 6 years while the films with less than 4000 ppm of molybdenum do not emit the VCI in the ambient conditions.     

How boron incorporation during Si1−xGex chemical vapor deposition degrades the Ge profile

The effect of boron incorporation during chemical vapor deposition of SiGe thin films from silane, germane, diborane, and hydrogen gas mixtures is investigated. It is shown that boron incorporation during SiGe thin-film growth degrades the Ge profile under certain growth conditions when the boron concentration is high enough (>10¹⁹ cm⁻³). In single-wafer atmospheric-pressure processes we find that no Ge concentration depression occurs at deposition temperatures above 675 °C. In multi-wafer atmospheric-pressure processes we find an increasingly occurring depression of the Ge concentration along the wafer stack, even at temperatures above 675 °C. In low-pressure processes, high-level in-situ doping of SiGe with boron is possible at temperatures as low as 550 °C without any degradation of the Ge profile. Thus LPCVD is superior to APCVD with respect to high-level in situ doping of SiGe with boron. The presence or absence of Ge profile degradation in boron-doped SiGe thin films is explained by the discussion of growth rate enhancement phenomena. Received: 15 September 1997 / Accepted: 7 November 1997     

PIXE Spectroscopy for Determination of Volatile Corrosion Inhibitor Concentration in Anticorrosion Polymer Films

Anti-corrosion polymer films used for 0 to 6 years were investigated to determine the type and content of volatile corrosion inhibitors (VCI) and how long the films emit it to protect the metal surface encased by the film. By FTIR and DSC low density polyethylene (LDPE) was identified as the polymer carrier. Particle induced X-ray emission (PIXE) spectroscopy of anti-corrosion polymer films revealed significant concentration of molybdenum implying that corrosion inhibitor was molybdate based. The films were divided into three groups according to different rate of the VCI concentration decrease with increasing age. The division of films into groups and diffusion of VCI was confirmed by significant decrease of Mo content determined by PIXE spectroscopy after accelerated ageing in vacuum at 50°C. It was concluded that films with initial concentration of Mo above 6000 ppm emit VCI for at least 6 years while the films with less than 4000 ppm of molybdenum do not emit the VCI in the ambient conditions.     

Surface Formation of Single Silicon Wafer Polished with Nano-sized Al2O3 Powders

"Ice polishing single silicon wafers with nano-sized Al2O3 abrasives can be known as ice fixed abrasives chemical mechanical polishing (IFA-CMP). TAn abrasive slurry was made of nano-sized Al2O3 particles dispersed in de-ionized water with a surfactant and the slurry was frozen to form an ice polishing pad. Then polishing tests of blanket silicon wafers with the above ice polishing pad were carried out. The morphologies and surface roughness of the polished silicon wafers were observed and examined on an atomic force microscope. The subsurface damage was assessed by means of cross-section transmission electron microscopy. The surface chemical constituents of the polished silicon wafers were characterized using X-ray photoelectron spectroscopy in order to gain insight into the chemical mechanisms in the process. Scratch resistance of the single silicon wafer was measured by nanoscratching using a nanoindenter to explore the mechanical removal mechanism. The results show that a super smooth surface with an average roughness of 0.367 nm is obtained within 1000 nm￡1000 nm and there is a perfect silicon diamond structure without any microcracks in the subsurface. The removal of material is dominated by the coactions of ductile regime machining and chemical corrosion. In the end, a model of material removal of IFA-CMP is built."     

Dissolution behavior of anodic oxide films formed in sulfanic acid on aluminum

Chemical dissolution of the barrier layer of porous oxide films formed on an aluminum foil (99.5% purity) in 1.5 M sulfanic acid after immersion in a 2 mol dm⁻³ sulphuric acid at 50 °C was studied. The barrier layer thickness before and after dissolution was determined using a re-anodizing technique. Re-anodizing was conducted in 0.5 mol dm⁻³ H³BO³/0.05 mol dm⁻³ Na²B⁴O⁷ solution. We found that the change in the porous oxide growth mechanism was observed at the anodizing voltage of 30 V. Taking into account this result chemical dissolution behaviour of the barrier layer of porous films formed at 20 V and 36 V and also the influence of annealing of oxide films at 200 °C were studied. We showed the interplay between the dissolution rates and charge distribution across the barrier layer. We conclude that the outer and middle layers have negative space charges and the inner layer has positive space charges.     

氢气流量对金刚石膜生长的影响研究

研究了电子辅助热灯丝法生长金刚石厚膜过程中氢气流量对沉积速度和膜品质的影响。随氢气流量从100增加到750cm^3/min，金刚石膜的沉积速率单调上升，但金刚石膜品质不断下降，从750到1000cm^3/min，金刚石膜沉积速率下降，但金刚石膜品质随氢气流量增加而提高。拉曼光谱和电子顺磁共振谱研究发现，在所制备的金刚石膜中含有替代形式的氮，氮含量随氢气流量的增加而减小，1000cm^3/min流量下沉积的金刚石膜的含氮量仅为100cm^3/min流量下沉积的金刚石膜的1／40。     

The parathiocyanogen electrode

Stable, yellow anodic films of parathiocyanogen (SCN) _x were formed on a platinum electrode from 2.8 M KSCN in methanol at 45 °C at a constant current of 20–40 mA cm⁻² for 15–30 min. Loosely bound orange crystals of a more amorphous character were removed by rinsing to leave an adherent yellow film with sharp Raman bands under 647.1 nm laser excitation at 627 cm⁻¹ (vCS), 1152 cm⁻¹ and 1236–1261 cm⁻¹ (vNN and vCN). The lack of electroactivity and short-lived photocurrents pointed to an insulating film at potentials up to 1.0 V (SHE). At more positive potentials, longer-lasting photocurrents were obtained, consistent with breakdown of the insulating film. XPS scans confirmed N:C:S ratios close to 1:1:1, with a deficiency of S of some 10% due to S lost as sulfate at the film surface. Oxidation of SeCN⁻ in neutral aqueous solution led to the formation of a less-stable orange paraselenocyanogen film with a Raman band at 1256–1267 cm⁻¹, which decomposed within a day to grey selenium. Received: 12 December 1997 / Accepted: 23 March 1998     

Oxidation and nitridation of niobium films by rapid thermal processing

The oxidation and nitridation processes of niobium films in a rapid thermal processing (RTP) – system were investigated. 200 and 500 nm niobium films were deposited via sputtering on sapphire-(1-102)-substrate. At first niobium films were oxidized in molecular oxygen at temperatures ranging from 350 to 500 °C and for times of 1, 2 and 5 min and then nitridated in ammonia at 1000 °C for 1 min using an RTP system. For characterisation of the niobium films complementary analytical methods were used: X-ray diffraction (XRD) for phase analysis, secondary ion mass spectrometry (SIMS) for determining the elemental depth profiles of the films, scanning electron microscopy (SEM) and atomic force microscopy (AFM) for characterisation of the surface morphology of the films. The influence of the substrate, single crystalline sapphire, on the reactivity of the niobium films was studied in dependence of temperature, time of reaction and film thickness. The possibility of existence of niobium oxynitride phase was investigated. According to XRD and SIMS data, there is evidence that an oxynitride phase is formed after oxidation and subsequent nitridation in the bulk of some Nb films. In some of the experiments crack formation in the films or even delamination of the Nb films from the substrates was observed.     

Electrochemical and in situ Raman spectroscopic study on the stability of poly(<Emphasis Type="Italic">N</Emphasis>-methylaniline)

The stability of poly(N-methylaniline) (PNMA) as electrode material has been studied in aqueous solutions of sulfuric acid with the use of electrochemical and in situ Raman spectroscopic techniques. It has been shown that the electrochemical decomposition of electrodeposited PNMA films follows a first-order reaction kinetics. The decomposition rate constants vary between 1.2 × 10⁻⁵ and 2.0 × 10⁻³ s⁻¹ for electrode potential varying between 0.2 and 1.0 V vs Ag/AgCl, respectively. In situ Raman spectroscopy has been applied in obtaining kinetic data at selected electrode potentials, and good correlation of these data with the corresponding data obtained by cyclic voltammetry has been found. As compared to polyaniline, the decomposition of PNMA proceeds at nearly the same rate at electrode potentials not exceeding 0.5 V. The decomposition of PNMA proceeds faster within the potential limits of 0.5 to 0.8 V and slower at electrode potentials exceeding 0.8 V as compared to polyaniline. This article is dedicated to Professor Algirdas Vaškelis (Institute of Chemistry, Vilnius, Lithuania) on the occasion of his 70th birthday and in honour of his contributions to electrochemistry and physical chemistry.     

Electrochemical behaviour of a lead electrode in phosphoric acid

 A lead electrode was studied in 6 and 12 M H₃PO₄. Oxidation of a freshly polished electrode occurred in the −0.5 to −0.3 V vs. SCE range, and led to PbHPO₄ growth on the electrode surface. The dissolution of this layer by electrochemical reduction occurred between −0.5 and −0.7 V. The influence of temperature (20 °C and 65 °C) was investigated and showed that the anodic and the cathodic peaks were increasing, and more markedly for the 12 M H₃PO₄. The ratio Q _cathodic/Q _anodic (Q=electrical charge flowing through the electrode) was equal or close to the unity at 20 °C and decreased as the temperature was increased. The influence of Cl⁻, Br⁻ and I⁻ ions was also evaluated. The addition of Cl⁻ and Br⁻ predominantly led to Pb₅(PO₄)₃Cl and Pb₅(PO₄)₃Br, respectively, while I⁻ led to a mixture of PbI₂ and PbHPO₄. Received: 18 July 1999 / Accepted: 2 November 1999     

Experimental determination of the static permittivity of extremely thin liquid layers of water dependent on their thickness

 A new method for determining the static permittivity (dielectric constant) of extremely thin liquid interlayers is illustrated. A special condenser, which can be filled with a test liquid, is constructed. Both condenser plates – one planar, the other spherically curved – are made of vitreous carbon and are supplied with a high-grade politure. In order to adjust plate separation distances from 10 nm up to about some μm the planar plate can be easily shifted by a piezoelectric translation stage; the plate separation is monitored by an optical system supported by displacement transducers. The measuring frequency was kept constant at 1 MHz. Water was chosen as the test liquid. At 19.8 °C thin water layers having thickness smaller than 0.3 μm exhibit a decrease of the dielectric constant. The experimental data are consistent with a decay length α^-1 of the order of 1 nm which in view of the underlying crude model must be regarded as approximative. Received: 28 May 1996 Accepted: 30 September 1996     

Nanocrystalline Diamond Thin Films Synthesis on Curved Surface

Thin films of curved surface nanocrystalline diamond (CS-NCD) are a category of important materials. However, the development of such materials is still a highly challenging task. Here we present a novel approach to synthesizing CS-NCD thin films deposited on non-spherical surfaces of molybdenum substrate using direct current plasma jet chemical vapor deposition. A special cooling system was designed and applied to ensure uniform substrate temperature. It is demonstrated from simulation and experimental results that this system is favorable for the production of thin films. The results show that the quality of CS-NCD thin films depends on the selection of optimal values of parameters including CH₄ concentration, substrate temperature, and chamber pressure. If the CH₄ concentration and/or the substrate temperature is too high or low, it results in non-diamond phase or micron-crystalline diamond thin films. Synthetic CS-NCD thin films using the proposed method have a smooth surface and uniform thickness. The average grain size and the mean surface roughness are approximately 30 and 4.3 nm respectively. Characteristics of CS-NCD thin film spectra comprised of the full width at half maximum with broad Raman peaks around 1,140 and 1,480 cm^?1, confirming the presence of the NCD phase.