Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties

In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski (Cz) furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnace (crucible diameter: 7.2 cm, crystal diameter: 3.5 cm, operated in a 10 Torr argon flow environment) was carried out using the finite‐element method. The global analysis assumed a pseudosteady axisymmetric state with laminar flow. The results show that different thermophysical properties will bring different variations of the heater power, the deflection of the melt/crystal interface, the axial temperature gradient in the crystal on the center of the melt/crystal interface and the average oxygen concentration along the melt/crystal interface. The application of the axial magnetic field is insensitive to this effect. This analysis reveals the importance of the determination of the thermophysical property in numerical simulation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Physical properties of Zn‐ 22 wt.% Al‐ x wt.% Ce melt spun eutectoid alloy

Zn‐ 22 wt.% Al (Zn ‐ 40 Al in atomic%) eutectoid alloys with different Cerium (Ce) contents of 0, 1, 2, and 6 (in wt.%), 0.35, 0.70 and 2.1 (in atomic%) were rapidly solidified by melt spun technique. The effects of high cooling rate and alloying element (Ce) on microstructure of the studied alloys were analyzed by X‐ray diffractometry (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. The results showed that the dendrites as well as grains size were refined by the additions of Ce. The main phases in melt spun alloys were α‐Al and η‐Zn, in addition to intermetallic CeZn₅ and Al₄Ce. Additional metastable intermetallic Al_0.71Zn_0.29 phase has been observed only for melt spun alloy of 6 wt.% Ce content. XRD peaks of melt spun alloys demonstrated a considerable broadening with percentage of Ce due to the grain refinement and lattice distortion. Moreover, increase of Ce content results in a decrease of Al lattice constant which could be related to formation of supersaturated solid solution of Zn and/or Ce in α‐Al. Crystallite size of all phases were in the range of nanometer scale which reflects the role of the high cooling rate and the existence of Ce as alloying element for producing nanocrystalline structure. Resistance measurements of melt spun alloys show that the relative resistance rate for the alloys of higher Ce content relaxed faster to lower value than that of lower Ce content. Electrical resistance and microstructure exhibit strongly Ce content dependence.     

Thermophysical properties of Zr-Cu-Al metallic glasses during crystallization

The crystallization behavior of Zr-Cu-Al metallic glasses was studied using thermophysical property measurements. When the Zr content of Zr-Cu-Al metallic glass decreased from 65 at.% to 45 at.%, the thermal conductivity gradually increased and the maximum value obtained was the composition of Zr:Cu:Al = 50:39.3:10.7(at.%). These metallic glasses were not crystallized upon heat treatment below the glass transition temperature T_g, and the thermophysical properties of these metallic glasses were almost constant. In contrast, these metallic glasses started to crystallize upon heat treatment above T_g after a certain derived time, and their thermal conductivity increased with the crystallinity of the metallic glass.     

Three‐dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients

Bidirectional temperature gradients coexist virtually in surface tension driven flows. However, the simulations have been performed to the flow with only one temperature gradient. A series of 3 D numerical simulations are conducted to investigate the Marangoni‐thermocapillary flow of silicon melt in a thin annular layer with bidirectional temperature gradients. The temperature gradients are produced by the temperature difference ΔT between walls and the constant heat flux q on the bottom, respectively. When changing q, the melt presents different state evolutions at different ΔT. Furthermore, two critical q are found, one makes the minimum melt temperature higher than the crystallization temperature and the other makes the flow unsteady. Both of the critical heat fluxes decrease with increasing ΔT. q contributes more to the elevation of the melt temperature, while ΔT contributes more to the enhancement of the melt instability. In addition, the melt on the free surface flows mainly along the radial direction.     

Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

A numerical model is developed to perform the dynamic and global simulation of Czochralski growth. The effect of melt convection is taken into account by means of an eddy viscosity flow model, which can represent the mixing effect of flow oscillations on the heat transfer. Our method is used to investigate the dynamics of the growth of a 40 cm silicon crystal.     

Structural and optical properties of vapour‐etching based porous silicon

The structural and optical properties of porous silicon (PS) layers prepared by Vapour‐Etching (VE) of moderately and heavily boron‐doped Si substrates are investigated. The VE technique produces rough PS layers that are essentially formed of interconnected cluster‐like structures. Optical investigations indicate that this surface roughness enables the PS layers to be used as antireflection coatings in silicon based devices. These optical characteristics are investigated by optical reflectivity and light scattering. The local chemical state and the microstructure of the PS layers are studied by electron energy loss spectroscopy (EELS) in transmission electron microscopy (TEM), and are correlated to the red photoluminescence (PL). TEM studies point out that the cluster‐like interconnected structures are composed of luminescent nanocrystallites. PL measurements display that both quantum confinement and surface passivation determine the electronic states of the silicon nanocrystallites. The complex dielectric function is calculated from the experimental single‐scattering distribution spectrum using a Kramers Kronig analysis. The first resonance peak in the imaginary part is observed at 2.3 eV; two other broadened features appear at 4.7 and 8.8 eV. The latter is generally related to an interface plasmon resulting from the silicon‐silicon oxide interface. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A statistical thermodynamic model for oxygen segregation during Czochralski growth of silicon single crystals

A thermodynamic model derived from atomic scale statistics is formulated for the crystal–melt interface where oxygen segregation occurs during silicon crystal growth by the Czochralski method. The model shows that the segregation coefficient is close to but less than unity. Approaches for controlling oxygen concentration in the resulted crystal are discussed.     

Spectroscopic and dielectric properties of a lithia-containing glass

Glass of the composition 65SiO₂-20CaO-15Li₂O (mol %) was prepared and subjected to heat treatment. The obtained samples were characterized before and after heat treatment by DTA, TG, XRD, SEM, IR and dielectric spectroscopy. DTA showed an endothermic peak at 954 °C, accompanied by a pronounced change in the microstructure, as revealed by SEM. XRD showed that metasilicate predominates on heat treatment at 726 °C, while on heat treatment at 726 °C, then at 954 °C, disilicate crystallizes as the main phase. The IR spectra of the heat-treated glasses revealed that the vibrations of O-H groups are drastically decreased, while those due to non-bridging oxygens Si-O⁻ are increased. The dielectric constant (ε′), the loss tangent (tan δ) and the ac conductivity (σ_ac) for the prepared glasses were investigated before and after heat treatment over a moderately wide range of frequency and temperature. The activation energy of the dielectric relaxation process was found to depend on the techniques of sample preparation. A drop of dielectric constant values was observed for the heat-treated sample, which can be attributed to the ordering of the induced crystalline phases. The conductivity behavior suggests a hopping mechanism responsible for conduction.     

Synthesis and tribological properties of hexagonal titanium silicon carbide crystals

Hexagonal titanium silicon carbide (Ti₃SiC₂) crystals were prepared by vacuum sintering of Ti, Si, and C powders at 1300 °C. The microstructure and grain deformations of Ti₃SiC₂ were examined by scanning electron microscopy and transmission electron microscopy. The tribological properties of hexagonal Ti₃SiC₂ crystals as lubrication additive in HVI500 base oil were investigated by a UMT‐2 ball‐on‐plate friction and wear tester. The Ti₃SiC₂ additives exhibited good friction reduction. Under determinate conditions, the friction coefficient of base oil containing Ti₃SiC₂ crystals is lower than that of pure base oil. The base oil with 3.0 wt.% hexagonal Ti₃SiC₂ crystals presented good anti‐wear capability. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges

CuInSe₂ (CIS) ingots have been prepared by direct reaction of stoichiometric and non-stoichiometric proportions of high-purity Cu, In and Se. Two approaches, namely the one-ampoule process (quartz crucible) and two-ampoule process (graphite crucible) were investigated to grow the crystals, using starting charges with excess copper, and (nearly stoichiometric and with excess indium), respectively. The effect of deviation from stoichiometry in the charge on the physical properties of the resulting polycrystals is presented. Compositional analysis of the best part of the ingots with starting metals ratio (Cu/In) greater than or equal to 1 showed that the matrix preserved the original character of the charge and evidenced that the CIS chalcopyrite structure, -CIS, tolerates well a large In excess. In contrast, the composition of the crystal prepared with a 10% Cu excess was nearly-stoichiometric, with chemical images revealing the formation of heterogeneous phases besides -CIS. The inclusions precipitation was found to increase toward the ingot base. Interestingly, powder X-ray diffraction measurements revealed the presence of secondary phases rather in all the samples. The corresponding diffraction peaks were however few and very weak, with intensities of less than 3% the maximum value recorded for the CIS (1 1 2) plane.     

Influence of the deposition parameters on the microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon films by HW-CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared at high deposition rates (> 13 Å/s) from pure silane without hydrogen dilution by hot wire deposition method by varying filament-to-substrate distance (d_s-f). In this study we have systematically and carefully investigated the effect of filament-to-substrate distance on structural, optical and electrical properties of the Si:H films. A variety of characterization techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FE-SEM), UV-Visible-NIR spectroscopy and electrical dark and photoconductivity measurement were used to characterize these films. Films deposited at d_s-f > 5 cm are amorphous while those deposited at d_s-f < 5 cm are biphasic; a crystalline phase and an amorphous phase with nano-sized crystallites embedded in it. Low angle X-ray diffraction analysis showed that the crystallites in the films have preferential orientation along (111) directions. Decrease in d_s-f, the crystallinity and crystalline size increases whereas hydrogen bonding shifts from mono-hydride (SiH) to di-hydride (SiH₂) and poly-hydride (SiH₂)_n complexes. The band gaps of nc-Si:H films (~ 1.9-2.0 eV) are high compared to the a-Si:H films, while hydrogen content remains < 10 at.%. We attribute the high band gap to the quantum size effect. A correlation between electrical and structural properties has been established. Finally, from the present study it has been concluded that the filament-to-substrate distance is a key process parameter to induce the crystallinity in the films by hot wire method. The ease of depositing films with variable crystallite size and its volume fraction, and tunable band gap is useful for fabrication of tandem/micro-morph solar cells.     

Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition

Gold dot arrays on (1 1 1) Si substrates obtained through nanosphere lithography (NSL) combined with sputtering and annealing in Ar at 1000 °C are used to catalyze vapor liquid solid (VLS) epitaxial growth of silicon nanowires (Si NWs) using chemical vapor deposition (CVD) with SiH₄ in Ar. The NWs grow primarily epitaxially on the underlying (1 1 1) Si wafer following the four independent 〈1 1 1〉 directions. The diameter distribution of the wires reflects the diameter distribution of the catalyst gold dot arrays and is therefore predictable. The wire length depends on the size of the gold catalyst for the same CVD parameters. The wire position is foreseeable within the limits of the pattern geometrical quality, but one-to-one growth of NWs to gold dots is not always observed, probably due to (very locally) the remaining presence of silicon oxide. Overall, this inexpensive patterning method for obtaining high-quality crystalline VLS Si NWs by CVD fulfills the requirements of many device applications, where patterning control, quality and reproducibility of the nanostructures are crucial.     

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

The growth of highly oriented 3C–SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C–SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C–SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C–SiC grains and possessed no 3C–SiC grains oriented along the 3 1 1 and 1 1 0 directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C–SiC structures.     

Structural,ferroelectric and magnetic properties of Bi0.85Sm0.15FeO3 perovskite

Room temperature crystal structure, ferroelectric and magnetic properties of polycrystalline Bi_0.85Sm_0.15FeO₃ samples were investigated. X‐ray diffraction study shows that the compound possesses a dominant PbZrO₃‐like orthorhombic structure with √2a ×2√2a ×2a superlattice (a is the parameter of the cubic perovskite subcell). In contrast to piezoresponse force microscopy data demonstrating some features characteristic of ferroelectrics, polarization vs. electric field measurements reveal the behavior expected for nonpolar materials. Investigation of magnetic properties confirms that 15% samarium substitution suppresses the spin modulation typical of BiFeO₃ and induces the appearance of spontaneous magnetization. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and optical properties of near stoichiometric Ce:LiNbO3 crystals

The near sotichiometric Ce:LiNbO₃ (Ce:SLN) crystals were grown by the top seeded solution growth (TSSG) method by adding K₂O flux to Li₂O‐Nb₂O₅ melt. Their UV‐vis absorption spectra and IR spectra were measured and discussed to investigate their defect structure. The results showed that the grown crystals were near stoichiometric and Ce ions in the crystals located the Li site. Photorefractive properties of Ce:SLN crystals were studied by two‐wave coupling experiment. The results of the two‐wave coupling experiments of the crystals showed that as the CeO₂ doping concentrations increased, the diffraction efficiency increased, photoconductivity decreased and the writing time and erasure time increased. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and tribological properties of laminated Ti3SiC2 crystals

Laminated Ti₃SiC₂ crystals are prepared of Ti, Si, C and Al powders by the method of hot isostatic pressing with NaCl additive in argon at 1350 °C. The laminated morphology of Ti₃SiC₂ is presented through the SEM and TEM observations. The results of high resolution transmission electron microscope (HRTEM) and selected area electron diffraction (SAED) patterns combined, it can be seen that the layers are of Ti₃SiC₂ crystals. The growth mechanism of Ti₃SiC₂ crystals, controlled by two‐dimensional nucleation, is also explained. The tribological properties of Ti₃SiC₂ crystals as additives in HVI500 base oil are investigated by a UMT‐2 ball‐on‐plate friction and wear tester. The study shows that under determinate conditions, the friction coefficient of the base oil containing Ti₃SiC₂ crystals is lower than that of pure base oil, and it decreases with the increase of mass percent of Ti₃SiC₂ nanolayers when its proportion is lower than 5wt. %. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)