Chlorine/silicon surface reactions under heating

Reactions on Cl-adsorbed Si(111) and Si(100) surfaces—(Cl/Si(111) and Cl/Si(100))—under heating in ultrahigh vacuum (UHV) and in a Cl₂ atmosphere were studied. Auger electron spectroscopy (AES) and low-energy electron energy loss spectroscopy (LEELS) were used for examination of surface changes. Heating in UHV at 820°C for 30 s successfully removed almost all Cl atoms, both on Cl/Si(111) and Cl/Si(100). Variance in LEELS spectra shows that decomposition of SiCl_x (x > 1), a small amount of which was present on Cl/Si(111), occurs under heating on Si(111) both in UHV and in Cl₂ and desorbs reaction products, leaving the Si---Cl bonds on the surfaces. Such Si---Cl bonds specific to those on Cl/Si(111) are formed also on Cl/Si(100) heated in C1₂ at 820°C. On Cl/Si(100) heated in C1₂, there are various surface changes: relaxation of the 2 × 1 structure remaining on the Cl/Si(100), desorption of reaction products, and formation of Si---Cl bonds specific to those on Cl/Si(111). The Si---Cl bonds, both on Cl/Si(111) and Cl/Si(100), decomposed under longer heating and under heating at higher temperatures in UHV.     

Photodesorption and photofragmentation of disilane adsorbed on a hydrogen terminated Si(100) surface

The photochemical mechanisms leading to the desorption and fragmentation of Si₂H₆ adsorbed on a hydrogen terminated Si(100) surface have been explored by recording the time-of-flight distributions of products escaping from the surface and by using electron energy loss spectroscopy to probe possible electronic excitations. Photodesorption of intact Si₂H₆ involves hot electrons that lose energy and move to the conduction band edge before initiating desorption. When the wavelength of the incident light is 193 nm, Si₂H₆ fragments give mostly Si, SiH₂, H₂ and SiH₄, but this pathway is quenched at longer wavelengths. This is consistent with direct excitation, but we also show that a negative ion resonance is accessible to substrate electrons that have been excited by 193 nm light.     

HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride.     

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_(1-x)Sn_x films on Si(100) and Si(111)

Germanium-tin films with rather high Sn content(28.04% and 29.61%) are deposited directly on Si(100) and Si(111)substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_(1-x)Sn_x films is investigated by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM). The x-ray diffraction(XRD) is also performed to determine the crystallinities of the Ge_(1-x)Sn_x films. The experimental results indicate that root mean square(RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional(3 D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_(1-x)Sn_x/Si(111) has no obvious advantage over that of Ge_(1-x)Sn_x/Si(100) and the selection of Si(111) substrate is an effective method to improve the surface morphologies of Ge_(1-x)Sn_x films. We also find that more severe Sn surface segregation occurs in the Ge_(1-x)Sn_x/Si(111) sample during annealing than in the Ge_(1-x)Sn_x/Si(100) sample.     

EFFECT OF ATOMIC HYDROGEN ON THE ACETYLENE-ADSORBED Si(100)(2×1) SURFACE AT ROOM TEMPERATURE

High resolution electron energy loss spectroscopy, low energy electron diffraction and quadrupole maas spectrometer (QMS) have been employed to study the effect of atomic hydrogen on the acetylene-saturated pre-adsorbed Si(100)(2×1) surface and the surface phase transition at room temperature. It is evident that the atomic hydrogen has a strong effect on the adsorbed C₂H₂ and the underlying surface structure of Si. The experimental results show that CH and CH₂ radicals co-exist on the Si surface after the dosing of atomic hydrogen; meanwhile, the surface structure changes from Si(100)(2×1) to a dominant of (1×1). These results indicate that the atomic hydrogen can open C=C double bonds and change them into C-C single bonds, transfer the adsorbed C₂H₂ to C₂H_x(x = 3,4) and break the underlying Si-Si dimer, but it cannot break the C-C bond intensively. The QMS results show that some C₄ species axe formed during the dosing of atomic hydrogen. It may be the result of atomic hydrogen abstraction from C₂H_x which leads to carbon catenation between two adjacent C-C directs. The C₄ species formed are stable on Si(100) surfaces up to 1100 K, and can be regarded as the potential host of diamond nucleation.     

Adsorption and decomposition of triethylsilane on Si(1 0 0)

The adsorption and decomposition of triethylsilane (TES) on Si(1 0 0) were studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). TPD and HREELS data indicate that carbon is thermally removed from the TES-dosed Si(1 0 0) surface via a β-hydride elimination process. At high exposures, TPD data shows the presence of physisorbed TES on the surface. These species are characterized by desorption of TES fragments at 160 K. Non-thermal decomposition of TES was studied at 100 K by irradiating the surface with 600 eV electrons. ESD of mass 27 strongly suggests that a β-hydride elimination process is a channel for non-thermal desorption of ethylene. TPD data indicated that electron irradiation of physisorbed TES species resulted in decomposition of the parent molecule and deposition of methyl groups on the surface that desorbed thermally at about 900 K. Without electron irradiation, mass 15 was not detected in the TPD spectra, indicating that the production of methyl groups in the TPD spectra was a direct result of electron irradiation. XPS data also showed that following electron irradiation of TES adsorbed on Si(1 0 0), carbon was deposited on the surface and could not be removed thermally.     

SiC formation on Si(100) via C60 precursors

The interaction between C₆₀ molecules and the Si(100) surface and the preparation of silicon-carbide thin films by thermal reaction of C₆₀ molecules with the Si(100) surface have been investigated using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy measurements. The effects of annealing temperature and C₆₀ coverage on the SiC formation will be discussed. It is found that the C₆₀ molecules bond covalently with silicon, and the number of bonds increase upon increasing the annealing temperature. Annealing at T≥830°C entails the formation of stoichiometric silicon carbide clusters that coalesce to form a continuous SiC layer when the C₆₀ coverage is greater than one monolayer. Deep pits acting as silicon diffusion channels are present with dimensions that increase with the amounts of C₆₀.

The interaction of C₆₀ with the SiC surface was also investigated. It is found that a similar covalent interaction is present in the two systems C₆₀/Si and C₆₀/SiC.     

Spectroscopic characterization of TiCx films produced by pulsed laser deposition in CH4 environments

Titanium carbide (TiC_x) thin films were grown on (1 0 0)-Si substrates by a pulsed laser deposition (PLD) method using a Ti target in methane gas. The films are characterized in situ by Auger (AES), electron energy loss (EELS) and X-ray photoelectron spectroscopies (XPS). It was found that the reaction between the ablated Ti species and CH₄ in the plasma plume influenced the C:Ti ratio. XPS numerical fitting for the C 1s transition revealed three Gaussians components. The main component, binding energy of 282.8 eV, is assigned to C making bonds with Ti, like in stoichiometric TiC. The second component, binding energy of 284.9 eV, is assigned to C---C bonds. A third component is found for films deposited at pressures higher than 25 mTorr at 286.5 eV. A post-deposition thermal treatment demonstrates that the Ti---C and C---C peaks are very stable, whereas, the third peak tends to decrease for temperatures higher than 200 °C. It is assumed that this last component is due to carbonyl complexes remnant in films. Finally, it can be concluded that the titanium carbide films processed by PLD is a chemically inhomogeneous material; mostly composed of sub-stoichiometric TiC and particulates of segregated carbon.     

Amorphous SiC film formation on Si(100) using electron beam excitation

The effect of electron impact on methylsilane (CH₃SiH₃) conversion to amorphous-Si_0.5C_0.5:H (a-Si_0.5C_0.5:H) films on Si(100) has been studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and low energy electron diffraction (LEED). It is found that electron impact greatly enhances CH₃SiH₃ decomposition on Si(100) at both 90 K and 300 K, resulting in a-Si_0.5C_0.5:H thin film formation. Thermal annealing of the film causes hydrogen desorption and amorphous silicon carbide (a-SiC) formation. Upon annealing to temperatures above 1200 K, the a-SiC film became covered by a thin silicon layer as indicated by AES studies. Ordered structures are not produced by annealing the a-SiC up to 1300 K.     

Chemical reactions of chlorine on a vicinal Si(100) surface studied by ESDIAD

The reaction of Cl₂ on a vicinal Si(100) surface has been studied by ESDIAD. This type of surface possesses two types of sites: pairs of dangling bonds on Si---Si terrace dimers, and single dangling bonds on the 2-atom layer high steps. The reactivity of these two sites is compared. For low coverages the step dangling bonds are identified as the preferred Cl bonding site after 673 K-annealing. Upon higher temperature annealing and SiCl₂(g) desorption, the terrace-site Cl species are depleted more rapidly than the step-site Cl species. Extensive isothermal etching under a continuous Cl₂ flux at 800 K is found to produce a disordered surface structure. Heating to 1123 K causes a reordering of the surface.     

紫外辐射加速老化高温硫化硅橡胶的X射线光电子能谱研究

高温硫化硅橡胶具有优良的电气性能、机械性能、憎水性而广泛应用于特高压输电线路,但亦会受外界环境的影响而老化,其抗紫外老化性能受到关注.课题组模拟户外紫外辐射环境,设计搭建了可调式紫外辐射加速老化试验箱,对A、B两个厂家的高温硫化硅橡胶样品进行了紫外辐射(0,500和1000 h)加速老化实验,重点对辐射前后的试样进行X...     

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO_x/Si system

The damage on the atomic bonding and electronic state in a SiO_x(1.4-2.3 nm)/c-Si(150 μm) interface has been investigated.This occurred in the process of depositing indium tin oxide(ITO) film onto the silicon substrate by magnetron sputtering.We observe that this damage is caused by energetic particles produced in the plasma(atoms,ions,and UV light).The passivation quality and the variation on interface states of the SiO_x/c-Si system were mainly studied by using effective minority carrier lifetime(τ_(eff)) measurement as a potential evaluation.The results showed that the samples' τ_(eff)was reduced by more than 90%after ITO formation,declined from 107 μs to 5 μs.Following vacuum annealing at 200 ℃,the τ_(eff) can be restored to 30 μs.The components of Si to O bonding states at the SiO_x/c-Si interface were analyzed by x-ray photoelectron spectroscopy(XPS) coupled with depth profiling.The amorphous phase of the SiO_x layer and the "atomistic interleaving structure" at the SiO_x/c-Si interface was observed by a transmission electron microscope(TEM).The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds(or interface states) and effective minority carrier lifetime.After an appropriate annealing,the reduction of the Si dangling bonds between SiO_x and near the c-Si surface is helpful to improve the passivation effect.     

Oxygen nonstoichiometry and electrical conductivity of the solid solutions La2−xSrxNiOy (0≤x≤0.5)

Oxygen nonstoichiometry and electrical resistance of a series La_2−xSr_xNiO_y solid solutions, where x=0.0, 0.2 and 0.5 in argon flows at oxygen partial pressures 1.5, 10.2, 49.2, 100 and 286 Pa within the temperature range of 20–1050°C were studied. Nickelate oxygen desorption/sorption spectra when heating–cooling at constant rate demonstrated strong dependence of cation composition of the samples. Unlike La_1.5Sr_0.5NiO_y compounds those of La₂NiO_y and La_1.8Sr_0.2NiO_y have weakly bonded oxygen, capable to exchange reversibly with the gas phase at the temperatures higher than 250°C. The equilibrium values of oxygen nonstoichiometry and specific resistance for the these nickelates were determined at 300–1050°C and p_O2=1.5–286 Pa as a functions of temperature versus oxygen partial pressure. All nickelate studied appear to be p-type conductors with metal electric conductivity at equilibrium states.     

CCD电子辐照效应三维蒙特卡罗模拟研究

CCD易受空间环境中高能电子辐射的影响,造成性能下降和工作异常,针对此问题,选取某国产N沟道3相多晶硅交迭栅、帧转移结构CCD开展了电子辐照效应研究。采用三维蒙特卡罗软件FLUKA建立电子辐照CCD的组成材料Si和SiO₂模型,仿真模拟电子和材料相互作用的物理过程,计算不同能量电子在Si和SiO₂中的总质量阻止本领和射程,与文献理论计算结果对比验证了本文仿真方法的正确性。建立CCD像元阵列的三维模型,模拟计算不同能量电子在CCD中能量沉积过程的影响,以及像元间有无边界对电子在CCD像元中平均原子离位（DPA）的影响,分析了辐照损伤差异产生的机理。结果表明,靠近入射点的像元能量沉积最大处对应的入射电子能量较小;对于无边界像元,电子辐照产生的DPA随入射深度的增加先增加后减小,而在有边界像元中产生的DPA随入射深度的增加先减小后增加,并且随入射深度的增加无边界像元中产生的DPA与有边界像元中产生的DPA差值越来越小。     

XPS investigation of a-Si : H thin films after light soaking

Amorphous hydrogenated silicon thin films prepared by homogeneous chemical vapour deposition have been studied. The Si2p, O1s and C1s electron spectra have been recorded after different light soaking times using repeated 100 mW/cm² white light illumination and X-ray photoelectron spectroscopy (XPS) measurements. The change of the position and intensity of the Si2p peak has been observed after light soaking and is explained by the transformation of the Si–H bonds. The correlation between the micropore density in a-Si : H film and the binding energy of Si2p electrons is demonstrated.     

Determination of the inelastic mean free path of electrons in silver and copper by measurement and calculation of the elastic scattering coefficient

The inelastic mean free paths, λ, of electrons in polycrystalline Ag and Cu samples were determined for electron energies in the range 250–1500 eV by means of elastic peak electron spectroscopy (EPES). In this method the coefficient of elastic scattering of electrons, η_e, is measured. η_e is also calculated theoretically for different assumed values of λ. The value of λ giving the best agreement between the measured and calculated η_e is taken as the experimental one. the η_e measurements were performed for Ag and Cu samples cleaned by mechanical scraping only and for samples cleaned by ion bombardment in order to estimate the eventual influence of surface roughness on the η_e values. Additionally, different methods to calculate η_e theoretically are compared.     

线性微波化学气相沉积制备SiNx薄膜的微结构及光学性能研究

利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiN_x薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiN_x薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiN_x薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiN_x 薄膜沉积速度影响较大, 制备的SiN_x薄膜最大沉积速度为135 nm·min^-1.     

Observation of defects and growth orientations of YBa2Cu3Ox thin films with YSZ buffer layers on Si

We have investigated defects and in-plate orientations of YBa₂Cu₃O_x thin films prepared by pulsed laser deposition (PLD) with YSZ as a buffer layer. The films showed c-axis oriented growth with the transition temperature T_co up to 87 K. Several types of defects including thermally induced cracks, grain boundaries and outgrowths were observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The grain boundary provided a favorable path for crack propagation. The outgrowths nucleated on the YSZ surface grew with stoichiometric composition. According to X-ray diffraction (XRD) and HRTEM studies the YSZ buffer layer grew with the orientation relationship, YSZ110//Si110 and YSZ(001)//Si(001) up to the YBCO/YSZ interface. The superconducting YBCO films on top grew mainly with YBCO100//Si110 and YBCO(001)//Si(001), with some minor portions of YBCO110//Si110 and YBCO(001)//Si(001).     

Crystallization of isolated amorphous zones in semiconductors

Thermal annealing, irradiation with electrons (25-300 keV), and irradiation with photons (hν = 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy and computer image analysis were used to determine the crystallization processes. For all materials, thermally stimulated crystallization occurred only at temperatures above 373 K. The electron-stimulated crystallization rate is sensitive to the electron energy. Initially, the rate decreases with increasing energy until it reaches a minimum at about one half the threshold displacement energy and then it increases. It is insensitive to the irradiation temperature between 90 and 300 K and to the crystal orientation. The effective diameter of the amorphous zone initially shrinks linearly with increasing electron dose. For the laser-induced crystallization experiments the crystallization rate in Si, but not in Ge, was sensitive to the temperature, with a faster rate occurring at 300 K than at 90 K. The photon and electron stimulated crystallization results indicate that a non-displacive mechanism causes bond breakage at the amorphous-crystalline interface. The re-formation of these interfacial bonds is responsible for the amorphous-to-crystalline transition.     

Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment

a-Si/insulator multilayers have been deposited on (0 0 1) Si by electron gun Si evaporation and periodic electron cyclotron resonance plasma oxidation or nitridation. Exposure to an O or N plasma resulted in the formation of a thin SiO₂ and SiN_x layer whose thickness was self-limited and controlled by process parameters. For thin-layer (2 nm) Si/SiO₂ and Si/SiN_x multilayers no visible photoluminescence (PL) was observed in most samples, although all exhibited weak “blue” PL. For the nitride multilayers, annealing at 750°C or 850°C induced visible PL that varied in peak energy with Si layer thickness. Depth profiling of a-Si caps on thin insulating layers revealed no detectable contamination for the SiN_x layers, but substantial O contamination for the SiO₂ films.