LD-end-pumped passively Q-switched Nd:YAG ceramic laser with single wall carbon nanotube saturable absorber

We report on a LD-end-pumped passively Q-switched Nd:YAG ceramic laser by using a novel single wall carbon nanotube saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric Arc discharge method on quartz substrate with absorption wavelength of 1064 nm. We firstly investigated the continuous wave (CW) laser performance and scattering properties of Nd:YAG ceramic sample. For the case of passively Q-switched operation, a maximum output power of 376 mW was obtained at an incident pump power of 8.68 W at 808 nm, corresponding to an optical–optical conversion efficiency of 4.3%. The repetition rate as the increase of pump power varied from 14 to 95 kHz. The minimum pulse duration of 1.2 μs and maximum pulse energy of 4.5 μJ was generated at a repetition rate of 31.8 kHz.     

Real-space observation of photonic nanojet in dielectric microspheres

The three-dimensional real-space observation of photonic nanojet in different microspheres illuminated by a laser is reported. The finite-difference time-domain technique is used to perform the three-dimensional numerical simulation for the dielectric microspheres. The key parameters of photonic nanojet are measured by using a scanning optical microscope system. We reconstruct the three-dimensional real-space photonic nanojets from the collected stack of scanning images for polystyrene microspheres of 3 μm, 5 μm, and 8 μm diameters deposited on a glass substrate. Experimental results are compared to calculations and are found in good agreement with simulation results. The full width at half-maximum of the nanojet is 331 nm for a 3 μm microsphere at an incident wavelength of 633 nm. Our investigations show that photonic nanojets can be efficiently imaged by a microsphere and straightforwardly extended to rapidly distinguish the nano-objects in the far-field optical system.     

Dual-wavelength investigation of laser-induced damage in multilayer mirrors at 532 and 1064 nm

Thin film beam splitters with high reflectivity at 532 nm and high transmittance at 1064 nm were deposited via reactive electron-beam evaporation with optimized parameters. The damage performance of the samples was investigated under irradiations of 532 nm laser only, 1064 nm laser only, and various combined laser fluences. The damages induced by the 1064 nm laser were primarily attributed to the initiators at the interface between the coatings and substrate. Under 532 nm laser irradiation only, two distinctive damage pits initiated by the submicron absorptive defects located at different coating depths and correlated to interfaces were observed. The damage effect under simultaneous irradiation in multilayer films was also investigated. The respective sensitive defects of the two lasers remained the precursors for causing damage. However, the dominant damage factors in simultaneous irradiation changed with the 1064 nm laser fluence, which also determined the coupling effect between the two lasers in terms of causing damage. Finally, correlative analysis methods were used to discuss the different coupling effects.     

Hydrogen analysis in diamond like carbon by elastic recoil detection

Among the available surface analytic instruments, elastic recoil detection (ERD) is known as a reliable method for hydrogen analysis. Since conventional fluence determination i.e. beam current integration is incredible at a large tilt angle, ion fluence is determined by the scattering spectrum that is simultaneously measured with recoil spectrum. However scattering cross sections deviate Rutherford values in the ERD energy of 1–3 MeV. Carbon scattering cross section is different from Rutherford value for higher beam energies over 1.8 MeV. As a result hydrogen content is exaggerated when fluence is determined by carbon matrix because of fluence underestimation due to lower value of scattering cross section than Rutherford’s. Therefore in order to quantify hydrogen in diamond like carbon (DLC) incident beam energy lower than 1.6 MeV should be used where carbon scattering cross sections are well agreed with Rutherford’s.     

Pulsed infrared radiation transmission through hollow silica waveguides

Transmission measurements of Q-switched and free-running Er:YAG laser radiation, at 2.94 μm and free-running Ho:YAG laser radiation, at 2.06 μm, through hollow silica waveguides of 750 and 1000 μm core diameter were performed. Attenuation measurements were obtained as a function of the laser energy input and as a function of the bending curvature. The output beam quality was also studied as a function of the focal length of the coupling lens and the overall launching conditions for straight waveguides using the appropriate beam profiler.     

Heat affected zone in aluminum single crystals submitted to femtosecond laser irradiations

An experimental procedure is developed to quantify the radial dimension of the heat affected zone (HAZ) in metals submitted to laser pulses. A cube oriented aluminum single crystal is highly deformed by plane strain compression, then micro-drilled by 200 fs or 8 ns laser pulses, and finally analyzed by the electron back scattering diffraction technique. Recrystallized and recovered zones are observed as signatures of the HAZ. A typical value of 1.5 μm is found in the femtosecond regime of illumination, whereas for nanosecond pulses a value of 25 μm is measured. These results are in accordance with previous experiments and numerical simulations.     

Characterization on electron beam evaporated α-MoO3 thin films by the influence of substrate temperature

Electrochromic molybdenum oxide (MoO₃) thin films were prepared by electron beam evaporation technique using the dry MoO₃ pellets. The films were deposited on glass and fluorine doped tin oxide (SnO₂:F or FTO) coated glass substrates at different substrate temperatures like room temperature (RT, 30 °C), 100 °C and 200 °C. The influence of substrate temperature on the structural, surface morphological and optical properties of the films has been studied. The X-ray diffraction analysis showed that the films are having orthorhombic phase MoO₃ (α-MoO₃) with 〈1 1 0〉 preferred orientation. The laser Raman scattering spectrum shows the polycrystalline nature of MoO₃ films deposited at 200 °C. The Raman-active band at 993 cm⁻¹ is corresponding to Mo–O stretching mode that is associated with the unique character of the layered structure of orthorhombic MoO₃. Needle—like morphology was observed from the SEM analysis. The energy band gap of MoO₃ films was evaluated which lies between 2.8 and 2.3 eV depending on the substrate temperature and substrates. The decrease in band gap value with increasing substrate temperature is owing to the oxygen-ion vacancies. The absorption edge shift shows the coloration effect on the films.     

Multi-spectral antireflection coating on zinc sulphide simultaneously effective in visible,eye safe laser wave length and MWIR region

In recent years multi-spectral device is steadily growing popularity. Multi-spectral antireflection coating effective in visible region for sighting system, laser wavelength for ranging and MWIR region for thermal system can use common objective/receiver optics highly useful for state of art thermal instrumentation. In this paper, design and fabrication of antireflection coating simultaneously effective in visible region (450–650 nm), Eye safe laser wave length (1540 nm) and MWIR region (3.6–4.9 μm) has been reported. Comprehensive search method of design was used and the number of layers in the design was optimised with lowest evaluated merit function studied with respect to various layers. Finally eight-layer design stack was established using hafnium oxide as high index layer and silicon-di-oxide as low index coating material combination. The multilayer stack had been fabricated by using electron beam gun evaporation system in Symphony 9 vacuum coating unit. During layer deposition the substrate was irradiated with End-Hall ion gun. The evaporation was carried out in presence of oxygen and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 85% average transmission from 450 to 650 nm in visible region, 95% transmission at 1540 nm and 96% average transmission from 3.6 to 4.9 μm in MWIR region.     

Femtosecond laser processing of indium-tin-oxide thin films

Micro- and nano-scale crystalline indium-tin-oxide (c-ITO) patterns fabricated from amorphous ITO (a-ITO) thin films on a glass substrate using a (low NA 0.26) femtosecond laser pulse that is not tightly focused are demonstrated. Different types of c-ITO patterns are obtained by controlling the laser pulse energies and pulse repetition rate of a femtosecond laser beam at a wavelength of 1064 nm: periodic micro c-ITO dots with diameters of ~1.4 μm, two parallel c-ITO patterns with/without periodic-like glass nanostructures at a laser scanning path and nano-scale c-ITO line patterns with a line width ~900 nm, i.e. ~1/8 of the focused beam׳s diameter (7 μm at 1/e²).     

Light trapping in amorphous silicon solar cells with periodic grating structures

We report on the design of amorphous silicon solar cells with the periodic grating structures. It is a combination of an anti-reflection structure and the metallic reflection grating. Optical coupling and light trapping in thin-film solar cells are studied numerically using the Rigorous Coupled Wave Analysis enhanced by the Modal Transmission Line theory. The impact of the structure parameters of the gratings is investigated. The results revealed that within the incident angles of ? 40^° to + 40^° the reflectivity of the cell with a period of 0.5 μm, a filling factor of 0.1 and a groove depth of 0.4 μm is 4%–22.7% in the wavelength range of 0.3–0.6 μm and 1%–20.8% in the wavelength range of 0.6–0.84 μm, the absorption enhancement of the a-Si layer is 0.4%–10.8% and 20%–385%, respectively.     

Patterning of oxide-hardened gold black by photolithography and metal lift-off

A method to pattern infrared-absorbing gold black by conventional photolithography and lift-off is described. A photo-resist pattern is developed on a substrate by standard photolithography. Gold black is deposited over the whole by thermal evaporation in an inert gas at ∼1 Torr. SiO₂ is then deposited as a protection layer by electron beam evaporation. Lift-off proceeds by dissolving the photoresist in acetone. The resulting sub-millimeter size gold black patterns that remain on the substrate retain high infrared absorption out to ∼5 μm wavelength and exhibit good mechanical stability. This technique allows selective application of gold black coatings to the pixels of thermal infrared imaging array detectors.     

Mid-infrared luminescence and energy transfer of Dy3+/Tm3+ doped fluorophosphate glass

This work reports the observation of emissions at 2.9 μm, 1.8 μm and 1.47 μm from Dy³⁺/Tm³⁺ codoped fluorophosphate glass upon excitation of a conventional 800 nm laser diode. Judd–Ofelt intensity parameters and radiative properties of Dy³⁺ ions in present glasses were calculated using the Judd–Ofelt theory. The mechanism and microparameters of energy transfer processes were investigated based on photoluminescence performance and lifetime measurements. The Dy³⁺/Tm³⁺ codoped fluorophosphate glass possessing advantageous spectroscopic characteristics as well as excellent thermal stability is a promising candidate for an efficient 2.9 μm laser.     

Stimulated Raman backward scattering of a laser beam in a magnetized plasma

Stimulated Raman scattering of a laser beam is investigated in the plasma with strong self generated magnetic field. The magnetized plasma supports various localized radial and azimuthal modes of lower hybrid frequencies. The density fluctuations due to lower hybrid modes couple with the oscillating velocity due to the pump, and drive the scattered wave. Equations describing the Raman process are derived and effects of various modes are studied on the growth rate analytically. Self generated magnetic field has a strong localization effect on the Raman process and growth rate is maximum for radial eigen mode number q = 0 and azimuthal eigen mode number l = 3. The frequency shift has signatures of self generated magnetic field and could serve as a diagnostic.     

2.7 μm fluorescence radiative dynamics and energy transfer between Er3+ and Tm3+ ions in fluoride glass under 800 nm and 980 nm excitation

A detailed study of the fluorescence radiative dynamics and energy transfer processes between Er and Tm ions in the Er³⁺/Tm³⁺ doped fluoride glass is reported. The fluorescence properties of 2.7 μm emission, other infrared and visible emissions are investigated under different selective laser excitations. Three Judd–Ofelt intensity parameters, energy transfer microparameters and efficiency have been determined and discussed. It is found that present Er³⁺/Tm³⁺ doped fluoride glass possesses large calculated emission cross section (8.98×10^–21 cm²) around 2.7 μm. The more suitable pumping scheme for laser applications at 2.7 μm laser is 980 nm excitation for Er³⁺/Tm³⁺ doped fluoride glass.     

Laser ablation fast pulse discharge plasma spectroscopy analysis of Pb,Mg and Sn in soil

Laser ablation fast pulse discharge plasma spectroscopy (LA-FPDPS) technique is a recently developed atomic emission analytical technique that is analogous to dual pulse laser induced breakdown spectroscopy (DP-LIBS). LA-FPDPS, however, uses a periodical oscillating discharge plasma generation method on samples instead of the second laser beam in DP-LIBS. Here we describe the electric characteristics and its application to the analysis of Pb, Mg and Sn in soil. Due to the fast discharge process, the peak power deposition rate is up to 1.5 MW, although the discharge energy is relatively small. The main energy deposition process only last for ~ 4 μs. From the measured spectra, calibration curves for Pb, Mg and Sn in soil were derived and the limits of detection were 1.5 μg/g, 34 μg/g and 0.16 μg/g respectively.     

Preparation of micro-foils for TEM/STEM analysis from metallic powders

A technique has been developed which facilitates the preparation of electro-polished micro-foil transmission electron microscopy (TEM) specimens, which have previously been machined out of ≈100 μm diameter metallic powder particles using a Focussed Ion Beam (FIB) instrument. The technique can be used to create small volume TEM specimens from most metallic powder particles and bulk metal samples. This is especially useful when the matrices are ferritic steels, which are often difficult to image in the electron microscope, since the necessary aberration corrections change as the sample is tilted in the magnetic field of the objective lens.Small samples, such as powder particles, were attached to gold support grids using deposited platinum and were then ion milled to approximately 2 μm thickness in a focussed ion beam (FIB) instrument. Subsequently, the specimen assemblies were electropolished for short durations under standard conditions, to produce large (5 μm × 5 μm) electron transparent regions of material. The specimens produced by this technique were free from FIB related artefacts and facilitated atomic resolution scanning-TEM (STEM) imaging of ferritic and nickel matrices containing, for example, yttrium rich oxide nano-dispersoids.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Influence of the ZnO nanoparticle sizes and morphology on the photoinduced light reflectivity

We have established a principal possibility of changes of the light reflectivity at the wavelength of 633 nm (He–Ne laser) under influence of the external laser light. The changes are very sensitive to the wavelength of the photoinduced laser. We have chosen two types of the photoinduced lasers: UV nitrogen 7 ns laser at wavelength 371 nm heating near the absorption edge and the 10 ns 1064 nm Nd:YAG laser with wavelength 1064 nm. The power dependences of the reflectivity were studied. Possible explanation of the observed effects is presented following the conception of the nano-trapping levels. These results have been obtained from two ZnO thin films prepared from principally different deposition parameters leading to different particle features and morphologies.     

Diode-pumped monolithic Er3+:Yb3+:YAl3(BO3)4 micro-laser at 1.6 μm

Efficient eye-safe 1.6 μm monolithic laser was realized in a c-cut, 0.7-mm-thick Er³⁺:Yb³⁺:YAl₃(BO₃)₄ microchip end-pumped by a quasi-continuous-wave 970 nm diode laser. At incident pump peak power of 20.4 W, a maximum output peak power of 2.6 W with a slope efficiency of 19% was obtained when the waist radius of pump laser beam was 220 μm. The spectra and profiles of output beam of the Er³⁺:Yb³⁺:YAl₃(BO₃)₄ monolithic laser were measured. The influences of the waist radius of pump laser beam on the slope efficiency and threshold of the monolithic laser were also investigated.     

Concept of infrared photodetector based on graphene–graphene nanoribbon structure

We study the mechanisms of photoconductivity in graphene layer–graphene nanoribbon–graphene layer (GL–GNR–GL) structures with the i-type gapless GL layers as sensitive elements and I-type GNRs as barrier elements. The effects of both an increase in the electron and hole densities under infrared illumination and the electron and hole heating and cooling in GLs are considered. The device model for a GL–GNR–GL photodiode is developed. Using this model, the dark current, photocurrent, and responsivity are calculated as functions of the structure parameters, temperature, and the photon energy. The transition from heating of the electron–hole plasma in GLs to its cooling by changing the incident photon energy can result in the change of the photoconductivity sign from positive to negative. It is demonstrated that GL–GNR–GL photodiodes can be used in effective infrared and terahertz detectors operating at room temperature. The change in the photoconductivity sign can be used for the discrimination of the incident radiation with the wavelength 2–3 μm and 8–12 μm.