Authentication labels based on guided-mode resonant filters

A guided-mode resonance (GMR) filter with wide angular tolerances is experimentally demonstrated as an authentication label illuminated with unpolarized white light. The proposed filter, based on a free-standing silicon nitride membrane suspended on a silicon substrate, is fabricated by using anisotropic wet etching to remove the substrate beneath the silicon nitride layer. Both grating and waveguide structures without a lower cladding layer, i.e., a substrate, are fabricated simultaneously on a silicon nitride membrane. Since the silicon nitride is transparent within the spectra of visible and infrared light, such suspended-membrane-type GMR filters are well suited for applications within the visible spectrum. Moreover, the high refractive index of silicon nitride allows the proposed filters to have strongly modulated gratings and an immunity to high angular deviation. The measured reflection resonance has an angular tolerance up to +/-5 degrees under normal incidence for the wavelength of 629.5 nm.     

Silicon-based and suspended-membrane-type guided-mode resonance filters with a spectrum-modifying layer design

The concept of a spectrum-modifying layer is proposed for the design of a silicon-based guided-mode resonance filter. To realize such a novel device, a grating and waveguide structures are fabricated simultaneously in a suspended silicon nitride membrane. The cladding layer of the silicon substrate is replaced by the silicon dioxide membrane to reduce the absorption loss of the bulky substrate. Moreover, the silicon dioxide membrane plays a role in modifying the spectral response. According to the experimental results of the proposed structures, symmetrical line shapes and improved sidebands of nonresonance are demonstrated.     

基于一种易于制作的混合型表面等离激元波导结构的超紧凑截线滤波器

提出并分析了一种结构紧凑的截线型滤波器。该滤波器建立在一种硅基混合型表面等离激元波导结构上。与通常的混合等离激元结构相比,该波导结构在制作时只需对顶部的一层硅材料进行刻蚀,不需在光刻步骤进行对准和套刻,工艺简单易行。该截线滤波器由一截突柱波导与直波导耦合组成,并采用三维时域有限差分方法对其频谱响应进行模拟计算。计算结果表明该滤波器与现有文献中的二维金属-绝缘体-金属波导截线滤波器具有类似的频谱特性。另外,还进一步分析了截线部分及波导自身尺寸对器件输出频谱的影响。     

Preparation and application of the 3C–SiC substrate to piezoelectric micro cantilever transducers

This study examines the fabrication process and mechanical properties of piezoelectric films with the substrate, which is made from silicon carbide. After depositing the PZT thick film on silicon carbide substrate and silicon substrate respectively, it was shown that silicon carbide substrate formed a stable interface with PZT thick film up to 950?°C, compared with silicon substrate. In addition, the dielectric constant of the PZT thick film sintered at 950?°C on a silicon carbide substrate was 843, and this value was about over 25 % improved value compared with that on a silicon substrate. A thick film piezoelectric micro transducer of a micro cantilever type was fabricated by using a multifunctional 3C–SiC substrate. The fabricated micro cantilever was a micro cantilever with multiple thin films on either silicon or silicon carbide substrate. The piezoelectric thick-film micro cantilever that was fabricated by using a SiC substrate showed excellent mechanical and thermal properties. The piezoelectric micro cantilever on the SiC substrate shows an excellent sensitivity towards the change of mass compared with the piezoelectric micro cantilever on the Si substrate.     

Analysis of an ultra-compact wavelength filter based on hybrid plasmonic waveguide structure

In this letter, we propose and analyze an ultra-compact wavelength filter on silicon-based hybrid plasmonic waveguides, which confines light in a nanometeric silica dioxide layer between the silicon substrate and metal cap. The filter consists of a stub structure coupled to a straight waveguide. The three-dimensional finite-difference time-domain (FDTD) method is applied to calculate the spectral responses of such devices. Similar resonant behaviors are obtained since those devices are based on two-dimensional Metal-Insulator-Metal waveguide structure. Results also show that by adding stubs and tuning the distance between stubs can further improve the device's performance and shape the spectral response to some extent.     

硅微机械FP腔器件机电特性模拟

介绍了一种硅微机械FP腔器件,该器件作为光学滤波器、光学衰减器等在光纤通信技术中具有广泛应用.采用化学气相沉积、刻蚀、金属蒸发等工艺对该器件进行加工,并利用湿法腐蚀释放使其形成悬空结构,悬空膜采用静电激励驱动.分析了器件的基本原理、工作范围、静电激励的阈值电压等特性,并指出了影响阈值电压大小的因素.     

Fabrication of ultrathin color filters for three primary colors using guided-mode resonance in silicon subwavelength gratings

We fabricate reflection color filters for three primary colors using silicon two-dimensional triangular-lattice subwavelength gratings on the same quartz substrate. The grating periods are 480, 390, and 300 nm for red, green, and blue filters, respectively. All of the color filters have the same thickness of 100 nm, which enables the simple fabrication of a color filter array. Maximum reflectances of 75 and 46% are obtained at wavelengths of 647.1 and 522.1 nm for the red and green filters, respectively. The blue filter has a double-peaked spectrum with a reflectance of 30% at the peak wavelengths of 450.0 and 502.7 nm. By rigorous coupled-wave analysis, the dimensions of each color filter are designed, and the calculated theoretical reflectance is compared with the measured one.     

Highly efficient magnetically tunable high frequency spur-line notch filter

We report a cobalt ferrite nanorods (CFO NRs) based magnetically tunable spur-line notch filter where vertically aligned CFO NRs has been grown on silver nanoparticles coated silicon substrate. The CFO NRs are coupled with high frequency spur-line bandstop filter in flip-chip configuration and the device showed excellent tunable microwave properties in the presence of a low bias magnetic field. The center frequency of the tunable filter is ~16.4 GHz which is shifted to ~14.9 GHz with ~8.7% tunability by applying bias magnetic field ~320 Oe. The magnetic field tuning of the center frequency is explained on the basis of the change in permeability value of the CFO NRs with bias magnetic field as the NRs are used in the partially magnetized state. For validation, permeability value is also calculated by using numerical equations. The experimental reflection of the device has been supported with a simulation using CST microwave studio software.     

Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)

The effect of substrate temperature on the structural property of the silicon nanostructures deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition (HWCVD) was studied. The uniformity and size of the as-grown silicon nanostructures is highly influenced by the substrate temperature. XRD, Raman and HRTEM measurements show the silicon nanostructures consist of small crystallites embedded within amorphous matrix. The crystallite size of the as-grown silicon nanostructures decreases with increases in substrate temperature. FTIR shows that these silicon nanostructures are highly disordered for sample prepared at substrate temperature above 250 °C. The correlation of crystallinity and structure disorder of the silicon nanostructures growth at different substrate temperature was discussed.     

Fano resonance-based electrically reconfigurable add-drop filters in silicon microring resonator-coupled Mach-Zehnder interferometers

We report a Fano resonance-based electrically reconfigurable add-drop filter using a microring resonator-coupled Mach-Zehnder interferometer (MZI) on a silicon substrate. Our experiments reveal a pair of complementary Fano resonance line shapes that can be electrically tuned and output coupled from the MZI output ports. A near symmetrical resonance peak can be flipped to a near symmetrical resonance dip by applying a forward-bias voltage of less than 1V across a laterally integrated p-i-n diode in the MZI non-resonator-coupled arm. Our scattering-matrix-based modeling shows good agreement with the experiments and indicates ways to enhance the resonance routing functionality. Our work demonstrates the feasibility of an integrated reconfigurable add-drop filter with actively interchangeable throughput and drop ports.     

基于聚酰亚胺基底的太赫兹滤波器

超材料是通过人工方式做成的具有特殊电磁特性的亚波长周期性金属结构,通过合理的设计样品结构,可以实现自然界中传统材料无法实现的电磁现象。超材料可以广泛用于电磁隐身、完美吸收、负折射率等研究领域,近些年,随着太赫兹技术的发展,太赫兹超材料器件被广泛研究。由于硅（Si）对于太赫兹波的透过率较高,通常选取Si作为基底材料。但Si硬度较高、不易弯曲且易碎等缺点限制了THz超材料的应用。聚合物材料聚酰亚胺具有柔性,作为基底,克服了传统硅基底的缺点,透过率可以与Si匹敌,而且其表面光滑,适合传统光刻技术加工。对聚酰亚胺在太赫兹波段光学性质的测试结果表明,此种材料的折射率在1.9左右,透过率达到80%以上。设计了一种双开口谐振环结构,研究了其太赫兹波透射性质以及随太赫兹波的入射角度和样品曲率的变化规律,发现透射峰强度和峰位均不发生改变。此结果展示了将平面滤波延伸到曲面滤波领域的可能性,若将聚酰亚胺基底做薄,为今后太赫兹频段隐身衣的研究提供基础。将不同结构的两种样品叠加在一起制成宽谱滤波器, 50%的带宽达到181 GHz。此种宽带滤波器制作简单,滤波效果显著,为太赫兹波段宽带滤波器的制作提供一种新思路。     

Mechanically tunable metamaterials terahertz dual-band bandstop filter

We experimentally demonstrate a mechanically tunable metamaterials terahertz(THz) dual-band bandstop filter. The unit cell of the filter contains an inner aluminum circle and an outside aluminum Ohm-ring on high resistance silicon substrate. The performance of the filter is simulated by finite-integration-time-domain(FITD) method. The sample is fabricated using a surface micromachining process and experimentally demonstrated using a THz time-domain-spectroscopy(TDS) system. The results show that, when the incident THz wave is polarized in y-axis, the filter has two intensive absorption peaks locating at 0.71 THz and 1.13 THz, respectively. The position of the high-frequency absorption peak and the amplitude of the low-frequency absorption peak can be simultaneously tuned by rotating the sample along its normal axis.The tunability of the high-frequency absorption peak is due to the shift of resonance frequency of two electrical dipoles,and that of the low-frequency absorption peak results from the effect of rotationally induced transparent. This tunable filter is very useful for switch, manipulation, and frequency selective detection of THz beam.     

基底表面纳米织构对非晶四面体碳膜结构和摩擦特性的影响研究

本文利用离子束表面改性技术对基底表面进行不同时间的轰击, 形成不同规则的纳米织构, 对不同织构的变化规律进行了研究, 同时, 利用磁过滤真空阴极电弧技术, 在具有不同纳米织构的各基底上沉积相同时间的四面体非晶碳薄膜. 采用原子力显微镜对各基底的织构进行形貌分析, 结果表明, 高能粒子束的轰击对基底表面形貌有较大的影响, 根据离子束轰击时间的不同, 可以在基底表面形成各种不同规则的纳米织构, 轰击15 min后发现基底表面形成点阵纳米织构, 之后随着时间的增加, 基本维持点阵结构. 通过X射线光电子能谱仪和摩擦磨损试验仪对沉积在具有不同织构的基底上的ta-C薄膜进行测试, 研究表明, 基底表面纳米织构的非晶层结构引起薄膜内部sp³键的含量降低, 释放了薄膜的内应力, 同时发现基底表面纳米织构将ta-C薄膜磨损时间从不足10 min提高到约70 min, 有效提高了薄膜的耐磨性.     

溅射工艺参数对硅薄膜微结构影响的Raman分析

为了解决碳化硅难以进行光学加工的问题,该文采用射频磁控溅射方法,在碳化硅反射镜坯体上沉积与碳化硅具有相近热膨胀系数且易于进行光学加工的硅薄膜。利用拉曼光谱(Raman)对衬底温度、射频功率、衬底偏压等溅射工艺条件对硅膜微结构的影响进行了分析。研究发现：随着衬底温度的升高,薄膜的晶化率先增大后减小;衬底偏压的增加不利于薄膜有序结构的形成;射频功率对薄膜微结构的影响比较复杂,随着功率的升高,薄膜晶粒尺寸减小,晶化率降低,当射频功率进一步升高时,薄膜中有序团簇尺寸和晶化率逐渐升高。但过高的射频功率反而不利于薄膜的晶化。     

图形硅衬底GaN基发光二极管薄膜去除衬底及AlN缓冲层后单个图形内微区发光及 应力变化的研究

研究了图形硅衬底上外延生长的氮化镓(GaN)基发光二极管(LED)薄膜、去除硅衬底后的无损自由状态LED薄膜以及去除氮化铝(AlN)缓冲层后的自由状态LED薄膜单个图形内的微区光致发光(PL)性能, 用荧光显微镜与扫描电镜观测了去除AlN缓冲层前后LED薄膜断面弯曲状况的变化. 研究结果表明: 1)去除硅衬底后, 自由支撑的LED薄膜朝衬底方向呈柱面弯曲状态, 且相邻图形的柱面弯曲方向不一致, 当进一步去除AlN缓冲层后薄膜会由弯曲变为平整; 2)LED薄膜在去除硅衬底前后同一图形内不同位置的PL谱具有显著差异, 而当去除AlN缓冲层后不同位置的PL谱会基本趋于一致; LED薄膜每一位置的PL 谱在去除硅衬底后均出现明显红移, 进一步去除AlN缓冲层后PL谱出现程度不一的微小蓝移; 3)自由支撑的LED薄膜去除AlN缓冲层后, PL光强随激光激发密度变化的线性关系增强, 光衰减得到改善.     

Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition

ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.     

Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates

We have investigated an oxidation of substrate effect on structural morphology of zinc oxide (ZnO) rods. ZnO rods are grown on porous silicon (PS) and on thermally oxidized porous silicon substrates by carbothermal reduction of ZnO powder through chemical vapour transport and condensation. Porous silicon is fabricated by electrochemical etching of silicon in hydrofluoric acid solution. The effects of substrates on morphology and structure of ZnO nanostructures have been studied. The morphology of substrates is studied by atomic force microscopy in contact mode. The texture coefficient of each sample is calculated from X-ray diffraction data that demonstrate random orientation of ZnO rods on oxidized porous silicon substrate. The morphology of structures is investigated by scanning electron microscopy that confirms the surface roughness tends to increase the growth rate of ZnO rods on oxidized PS compared with porous silicon substrate. A green emission has been observed in ZnO structures grown on oxidized PS substrates by photoluminescence measurements.     

Microfabrication of freestanding porous silicon particles containing spectral barcodes

A method to microfabricate micron‐scale freestanding porous silicon photonic crystal particles is described. An electrochemically prepared film of porous silicon on a crystalline silicon substrate is patterned with an SU8‐25 photoresist, and the unmasked porous silicon is removed with a chlorine plasma reactive ion etch. Porous microparticles are then removed from the substrate by electropolishing. Scanning electron microscopy and microscopic reflection spectroscopy are used to characterize the geometry and optical properties of the freestanding particles. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characteristics of Multi-Beam Module Using Waveguides for Laser Scanning Optical Systems

A multi-beam module using optical waveguides has been studied for a laser scanning optical system. Laser diodes with a wavelength of 780 nm are assembled on a silicon substrate. The beams emitted from the laser diodes are directly coupled into waveguides. This multi-beam module is assembled on a metal substrate with a photodiode. The photodiode controls the power of each laser diode on the silicon substrate. The multi-beam module is able to increase the output speed of high-density image printings, and the speed for high-speed color printings. We have developed the four-beam module with beam divergence angles of 11 degrees and spatial beam interval of 24 μm. Additional heat sink and optimizing tip-bonding between the laser diode and solder pad on the silicon substrate is useful to stabilize laser power against rising temperature.