High current electron beam generation in a vacuum transient hollowcathode discharge

Experimental observations are presented of prebreakdown electron beam generation in a transient hollow cathode discharge (THCD) in a vacuum. The discharge driver consists of a 400-kV maximum voltage, 25-nF Marx operated at 450-J stored energy coupled to a 120-ns, 1.5-Ω coaxial line. Electron beams with peak currents up to tens of kA are observed when a pulsed Nd:YAG laser is used to produce a plasma at the back of the cathode surface, inside the hollow cathode region (HCR). It is found that a plasma density of a few 10¹⁸ cm^-3 in a volume of a few mm³ is required to generate intense electron beams. Optimal conditions are determined by varying the position of the laser focal spot inside the HCR and the time delay between the laser and the applied voltage. The main features of the electron beams are similar to those observed in conventional THCD at pressures in the 10-200 mtorr range     

Phenomenological model of the unstable stage of a vacuum spark discharge

A model of the unstable stage of a spark discharge in vacuum is proposed, which describes all typical manifestations of this stage, including current spikes in the diode, an increase in the potential at the cathode flame front, collective acceleration of ions in vacuum and plasma diodes, change in the cathode erosion mechanism, and the emergence of electron microbeams with a high current density at the anode. It is shown that these processes are associated with the formation of a charged electron layer of a spatially inhomogeneous plasma at the cathode flame boundary at the unstable stage of the spark discharge in vacuum. The emergence of this layer is associated with a limited emissive ability of the plasma at the cathode flame front during its expansion in vacuum. This leads to disruption of the plasma (field-induced emission of electron from the boundary region of the flame) and the formation of a short-lived charged plasma, viz., high-density ion cluster at the cathode flame boundary. The estimates obtained using this model are in good agreement with the experimental data on physical processes at the unstable stage of a vacuum spark discharge.     

Initial stage of discharge current growth in a triggered vacuum gap

The dynamics of light emission accompanying the initial stage of electric discharge in a substantially undervoltaged vacuum gap was studied with a knock-down model using high-speed photorecording. Voltage across the gap was maintained within the range of 0.5-5 kV, which corresponded to the minimum operating voltage of vacuum-triggered gaps. It was found that front layers of a plasma cloud near a cathode, formed by a firing pulse, scattered at a speed of (5-8)×10⁶ cm/s. During firing, a channel directed to the opposite electrode was formed from the plasma cloud near the cathode. It was found that the average switch-on delay time of the triggered vacuum gap is ~d(1+h/d) I_f^-α, where d is the interelectrode gap length, h is the trigger assembly penetration height, and I_f is the firing current     

The formation of dislocations by a spark discharge

The arrangement of dislocations formed in a single crystal of the alloy Fe-4·2% Si by a spark discharge in air is studied. The dislocations are made visible by etching on the surfaces perpendicular and parallel to the axis of the crater. The results of the observations are explained on the basis of microphysical conceptions of plastic deformation.

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, Fe— 4,2% Si . , . .

     

Excess-energy electrons in a nanosecond electron beam from a vacuum diode

The characteristics of an IMA3-150É sealed-off vacuum diode connected to a RADAN-220 nanosecond pulser are investigated. It is found that the electron beam behind the foil contains electrons with an energy exceeding the voltage applied to the diode. It is shown that the elevated-energy electrons appear at the leading edge of a current pulse, the FWHM of the current pulse of these electrons is 200–450 ps, and the pulse amplitude reaches several tens of amperes.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Efficient XeF laser with discharge stabilized by short-duration electron beam

Experimental and theoretical investigations have been carried out on the efficient operating conditions of an XeF laser with discharge stabilized by an electron beam of duration 50 nsec. The experimental values obtained were 0.15 J (3 J/liter) for the radiative energy per pulse and 1.5% for the efficiency.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 27–31, April, 1979.     

Generation of nanoparticles by spark discharge

The production of nanoparticles by microsecond spark discharge evaporation in inert gas is studied systematically applying transmission electron microscopy, mobility analysis and BET surface area measurement. The method of spark discharge is of special interest, because it is continuous, clean, extremely flexible with respect to material, and scale-up is possible. The particle size distributions are narrow and the mean primary particle size can be controlled via the energy per spark. Separated, unagglomerated particles, 3–12 nm in size, or agglomerates can be obtained depending on the flow rate. The nanoparticulate mass produced is typically 5 g/kWh. A formula is given, which estimates the mass production rate via thermal conductivity, evaporation enthalpy and the boiling point of the material used. We showed that with gas purified at the spot, the method produced gold particles that were so clean that sintering of agglomerated particles occurred at room temperature. The influence of a number of parameters on the primary particle size and mass production rate was studied and qualitatively understood with a model of Lehtinen and Zachariah (J Aerosol Sci 33:357–368, 2002). Surprisingly high charging probabilities for one polarity were obtained. Spark generation is therefore of special interest for producing monodisperse aerosols or particles of uniform size via electrical mobility analysis. Qualitative observations in the present study include the phenomenon of material exchange between the electrodes by the spark, which opens the possibility of producing arbitrary mixtures of materials on a nanoscale. If spark generation of nanoparticles is performed in a standing or almost standing gas, an aerogel of a web-like structure forms between surfaces of different electrical potential.     

Silicon nanoparticles produced by spark discharge

On the example of silicon, the production of nanoparticles using spark discharge is shown to be feasible for semiconductors. The discharge circuit is modelled as a damped oscillator circuit. This analysis reveals that the electrode resistance should be kept low enough to limit energy loss by Joule heating and to enable effective nanoparticle production. The use of doped electrodes results in a thousand-fold increase in the mass production rate as compared to intrinsic silicon. Pure and oxidised uniformly sized silicon nanoparticles with a primary particle diameter of 3–5 nm are produced. It is shown that the colour of the particles can be used as a good indicator of the oxidation state. If oxygen and water are banned from the spark generation system by (a) gas purification, (b) outgassing and (c) by initially using the particles produced as getters, unoxidised Si particles are obtained. They exhibit pyrophoric behaviour. This continuous nanoparticle preparation method can be combined with other processing techniques, including surface functionalization or the immediate impaction of freshly prepared nanoparticles onto a substrate for applications in the field of batteries, hydrogen storage or sensors.     

Laser-induced damage of the optical films prepared by electron beam evaporation and ion beam sputtering in vacuum

The laser-induced damage characteristics and adsorption effects of organic contamination molecules of two high reflectors (HR) prepared by electron beam evaporation (EB) and ion beam sputtering (IBS) method at 1064 nm is investigated in vacuum. It is found that EB films show the performance degradation of laser induced damages in vacuum while for IBS film, seems to have no this effect, in comparison with air environment. In addition, EB coatings also have the strong affinity with organic contamination molecules, in contrast of IBS films. The results reveal that ion beam sputtering (IBS) method seem to be one of the favorite film deposition techniques of the optical films used in vacuum and space environments.     

On the self-consistent states of a planar vacuum diode with an electron beam

The self-consistent stationary solutions for a planar vacuum diode with a monoenergetic electron beam are fully classified. Formulas are presented to calculate potential distributions of all types and the maximum electric current that can pass through the diode under steady-state conditions at an arbitrary applied voltage. The stability of the solutions is studied.     

A simple model of a glow discharge electron beam for materialsprocessing

A simple semiempirical model of the electron beam generated by a pulsed cold cathode electron gun has been developed. The model describes analytically the observed self-focusing of the discharge and predicts the dynamical variation of the focal distance, in good agreement with experiments. This effect plays a major role in the determination of the effective duration of the energy pulse. The model was used to conduct simple calculations of energy thresholds for melting of solid materials, giving helpful insight on ranges of operation of this kind of electron gun for its application to material processing. A comparison with available experimental data for Mg₇₀Zn₃₀ samples is given     

Gas laser excitation by an electron beam formed at open discharge

The method of formation of powerful electron beams (EBs) with nanosecond duration has been described (electron energyu10 to 20 keV and beam currentl _EB>1 kA) in the medium pressure gas which is simultaneously the laser active medium. The value ofl _EB=7 kA has been achieved atU=22 kV, =20 ns andp _Ne=300 Pa in a coaxial cell 330 mm long and 99 mm in diameter. The 3 kA current from the cathode with 60 cm² square in the shape of a segment of a sphere 140 mm in diameter has been achieved atU=23 kV, =15 ns andp _Ne=300 Pa. With the help of a magnetic field this beam has been transported to a distance of up to 100 cm.Applications of the beams for pumping various lasers were broadened. Lasing in He + Cd⁺ mixtures at the optimal He pressure of 10 to 12 kPa and in the triple mixture He-Cd-Kr has been obtained. Using the method of doubled excitation pulses it has been shown that EB pumping provides preservation of the lasing pulse parameters in the Eu atom laser in comparison with glowing discharge, the sequential frequency being an order of magnitude greater. Lasing at a significantly greater ion concentration than in gas discharge has been obtained in the ion laser on the self-terminating transition of Ca⁺,=866 nm. Quasicontinuous lasing has been realized in the mixture He + Sr + Kr in the plasma laser on Sr⁺,=430.6 nm.