Adsorption of oxygen on Au(111) by exposure to ozone

Atomic oxygen coverages of up to 1.2 ML may be cleanly adsorbed on the Au(111) surface by exposure to O₃ at 300 K. We have studied the adsorbed oxygen layer by AES, XPS, HREELS, LEED, work function measurements and TPD. A plot of the O(519 eV)/Au(239 eV) AES ratio versus coverage is nearly linear, but a small change in slope occurs at Θ_O=0.9 ML. LEED observations show no ordered superlattice for the oxygen overlayer for any coverage studied. One-dimensional ordering of the adlayer occurs at low coverages, and disordering of the substrate occurs at higher coverages. Adsorption of 1.0 ML of oxygen on Au(111) increases the work function by +0.80 eV, indicating electron transfer from the Au substrate into an oxygen adlayer. The O(1s) peak in XPS has a binding energy of 530.1 eV, showing only a small (0.3 eV) shift to a higher binding energy with increasing oxygen coverage. No shift was detected for the Au 4f_7/2 peak due to adsorption. All oxygen is removed by thermal desorption of O₂ to leave a clean Au(111) surface after heating to 600 K. TPD spectra initially show an O₂ desorption peak at 520 K at low Θ_O, and the peak shifts to higher temperatures for increasing oxygen coverages up to Θ_O=0.22 ML. Above this coverage, the peak shifts very slightly to higher temperatures, resulting in a peak at 550 K at Θ_O=1.2 ML. Analysis of the TPD data indicates that the desorption of O₂ from Au(111) can be described by first-order kinetics with an activation energy for O₂ desorption of 30 kcal mol⁻¹ near saturation coverage. We estimate a value for the Au–O bond dissociation energy D(Au–O) to be 56 kcal mol⁻¹.     

Structural effects on water formation from coadsorbed H + O on Rh(100)

The effect of adsorbate coverage, adsorption sequence and temperature on the structure, composition and reactivity of coadsorbed layers, produced by dissociative adsorption of O₂ and H₂ at 200 K on a Rh(100) surface, has been studied by combined TPD, XPS and LEED measurements. The emphasis is on the impact of the structure and composition of the mixed O + H layers on the synthesis of hydroxyl and water as a result of the O + H surface reaction. The difference in the O 1s binding energies of adsorbed O (529.9 eV) and OH species (530.8 eV) was used as a fingerprint to monitor the formation of the OH species. The H₂O TPD spectra show substantial variations of the desorption temperature range and the amount of water evolved with coadsorbate coverage and structure: from 270 to 350 K and from 0 to 0.08 ML, respectively. It has been found that dense O + H adlayers, where the O coverage is in the range 0.25-0.4 ML, favor the formation of stable OH species. The maximum amount of stable hydroxyl OH species ( 0.16 ML) can be produced by heating of these dense adlayers to 260 K. This results in reordering of the adspecies to form a new O + OH − (2 × 6) structure, where hydroxyls react readily to evolve 0.08 ML of water in a sharp desorption peak at 280 K. The effect of the adlayer density and restructuring on the production of OH and H₂O is discussed.     

Adsorption of oxygen and carbon dioxide on cesium-reconstructed Ag(1 1 0) surface

The adsorption of oxygen and carbon dioxide on cesium-reconstructed Ag(1 1 0) surface has been studied with scanning tunneling microscopy (STM) and temperature programmed desorption (TPD). At 0.1 ML Cs coverage the whole surface exhibits a mixture of (1 × 2) and (1 × 3) reconstructed structures, indicating that Cs atoms exert a cooperative effect on the surface structures. Real-time STM observation shows that silver atoms on the Cs-covered surface are highly mobile on the nanometer scale at 300 K. The Cs-reconstructed Ag(1 1 0) surface alters the structure formed by dissociative adsorption of oxygen from p(2 × 1) or c(6 × 2) to a p(3 × 5) structure which incorporates 1/3 ML Ag atoms, resulting in the formation of nanometer-sized (10–20 nm) islands. The Cs-induced reconstruction facilitates the adsorption of CO₂, which does not adsorb on unreconstructed, clean Ag(1 1 0). CO₂ adsorption leads to the formation of locally ordered (2 × 1) structures and linear (2 × 2) structures distributed inhomogeneously on the surface. Adsorbed CO₂ desorbs from the Cs-covered surface without accompanied O₂ desorption, ruling out carbonate as an intermediate. As a possible alternative, an oxalate-type surface complex [OOC–COO] is suggested, supported by the occurrence of extensive isotope exchange between oxygen atoms among CO₂(a). Direct interaction between CO₂ and Cs may become significant at higher Cs coverage (>0.3 ML).     

The Na-adsorbed Ge(0 0 1) surface: Structure and STM image simulations

Sodium adsorbed on the Ge(0 0 1) surface causes reconstruction of the surface with the type of reconstruction depending on the amount of the adsorbate. We present theoretical investigations of the structure and electronic properties of Na-adsorbed Ge(0 0 1) for the coverage of 0.5 monolayer using the combination of two methods: a plane-wave basis method and a local-orbital minimal-basis method. Two possible minimum-total-energy atomic configurations have been found, namely, the Na/Ge(0 0 1)-p(2 ×1) and Na/Ge(0 0 1)-p(4 × 1) reconstructions. The surface electronic structure for all calculated configurations occurs to be metallic. Our investigations are completed by a simulation of STM images for the obtained atomic structures.     

Hydrogen adsorption on Mo1−xRex(110) (x=0–0.25) surfaces

The effects of adsorbed H on the Mo_1−xRe_x(110), x=0, 0.05, 0.15, and 0.25, surfaces have been investigated using low-energy electron diffraction (LEED) and high-resolution electron energy loss spectroscopy (HREELS). For the x=0.15 alloy only, a c(2×2) LEED pattern is observed at a coverage Θ0.25 ML. A (2×2) pattern is observed for H coverages around Θ0.5 ML from surfaces with x=0, 0.05, and 0.15. Both c(2×2) and (2×2) patterns are attributed to reconstruction of the substrate. At higher coverages, a (1×1) pattern is observed. For the alloy surface with x=0.25, only a (1×1) pattern is obtained for all H coverages. Two H vibrations are observed in HREELS spectra for all Re concentrations, which shift to higher energies at intermediate coverages. Both peaks exhibit an isotopic shift, confirming their assignment to hydrogen. For Re concentrations of x=0.15 and higher, a third HREELS peak appears at 50 meV as H (D) coverage approaches saturation. This peak does not shift in energy with isotopic substitution, yet cannot be explained by contamination. The intrinsic width of the loss peaks depends on the Re concentration in the surface region and becomes broader with increasing x. This broadening can be attributed to surface inhomogeneity, but may also reflect increased delocalization of the adsorbed hydrogen atom.     

Desorption of H2 from W(110) and Fe covered W(110) surfaces

The kinetics of H₂ desorption from H/W(110) and H/Fe₁/W(110) were studied by measuring work function changes Δø vs time at a number of temperatures. Combination with previously determined Δø vs coverage data and differentiation at various fixed coverages gave rate vs T data from which activation energies of desorption could be obtained. E vs coverage results agree well with previously determine ΔH_des results. In the case of H/Fe₁/W(110) this includes a rise from 20 to 30 kcal mol⁻¹ of H₂ at H/Fe = H/W > 0.3. Plots of rate −dθ/dt vs θ (θ being coverage in units of H/W) vary much more steeply than θ² at most coverages for both systems. The θ dependence can be explained almost quantitatively in terms of the variations of ΔH_des and surface entropy S_s with coverage, by assuming that rates of desorption are equal to the equilibrium rates of adsorption. The latter can be formulated thermodynamically, except for a sticking coefficient, s. Values for s(θ, T) can also be obtained and show relatively little temperature dependence.     

Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption

D₂ temperature-programmed desorption (TPD) was used to probe the structure of the Si(011)-(16 × 2) surface. Deuterium was adsorbed at 200°C to coverages θ_D ranging up to complete saturation (approximately 1.1 ML) and the sample heated at 5°C s⁻¹. TPD spectra exhibited three second-order desorption peaks labelled β₂, β*₁ and β₁ centered at 430, 520 and 550°C. Of the proposed models for the Si(011)-(16 × 2) reconstruction, the present TPD results as a function of θ_D provide support for the adatom/dimer model with the β₂ peak assigned to D₂ desorption from the dihydride phase, while the β*₁ and β₁ peaks arise from adatom and surface-atom monohydride phases.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

Adsorption and decomposition of H2S on the Ge(100) surface

The adsorption and decomposition of H₂S on the Ge(100) surface is investigated. H₂S is a simple sulfur containing molecule that eventually decomposes to yield hydrogen gas and deposits sulfur on the germanium surface. The surface reactions of H₂S are investigated by ultraviolet photoelectron spectroscopy, Auger electron spectroscopy, and temperature programmed desorption. Room temperature exposure of H₂S to Ge(100) results in dissociative adsorption which can be followed easily by ultraviolet photoelectron spectroscopy. Warming the H₂S exposed surface results in some molecular desorption and further decomposition of the adsorbed species. At saturation, 0.25 ML of H₂S decomposes generating 0.5 ML of atomic hydrogen. Above the hydrogen desorption temperature some etching of the germanium surface is observed by sulfur. The etch product, GeS, is subsequently observed in temperature programmed desorption experiments. Exposure of H₂S to the Ge surface at elevated temperatures leads to higher sulfur coverages. A sulfur coverage approaching 0.5 ML can be deposited at the higher exposure temperatures.     

The adsorption and decomposition of NO on Pd(110)

The sticking probability of nitric oxide (NO) on Pd(110) and the relative selectivity of the surface to nitrogen (N₂) and nitrous oxide (N₂O) production has been measured as a function of coverage and as a function of surface and gas temperatures using a molecular beam. It is found that, at low temperatures (<440 K), molecular adsorption occurs with an initial sticking probability of 0.40 ± 0.02, rising quickly to a maximum of about 0.48 ± 0.02 as coverage increases before falling towards saturation. Following adsorption at 170 K four distinct adsorption sites can be identified by subsequent TPD. Hence, if beaming occurs at a temperature above the TPD peak due to a given site, then that site cannot be populated and the saturation coverage is found to be reduced. At higher temperatures (440–650 K) the sticking probability is seen to decrease continuously as a function of coverage. At a given NO uptake, the sticking probability falls with temperature indicating that the rate of NO desorption is significant in this temperature range. In addition, dissociation occurs leading to the desorption of nitrogen and nitrous oxide leaving only oxygen adatoms on the surface. The oxygen adatoms poison further reaction but can be cleaned off, even at the lowest temperature at which dissociation occurs, by hydrogen or carbon monoxide. At the low temperature end of this range more nitrous oxide is produced than nitrogen but this ratio falls with temperature until, above 600 K, there is 100% selectivity to the production of nitrogen which we propose is due to the low lifetime of molecular NO on the surface. However, at such high temperatures, reaction only occurs on a few sites probably located at the few step edges present on the crystal.     

Oxygen induced reconstruction of (h11) and (100) faces of copper

A LEED and AES study on oxygen adsorption on Cu(100) and (h11) faces with 5 h 15 has been performed under various adsorption conditions (220 K T 670 K and 1 × 10⁻⁸ P 6 × 10⁻⁵ Torr of oxygen). The dependence of adsorption temp on the oxygen surface superstructures is pointed out. At least, three oxygen surface states exist on a Cu(100) face. For low temperature exposures to oxygen, under conditions of slow surface diffusion, on the (100) face, two oxygen surface phases exist: a “four spots” and a c(2 × 2) superstructure, both observed even at saturation coverage; on all the stepped faces, a c(2 × 2) appears and no faceting is observed. For high temperature exposures, on the (100) face, two oxygen superstructures are observed, a “four spots” followed by a (2√2 × √2)R45° at higher coverages; on all the stepped faces, surface diffusion is activated and oxygen induced faceting occurs. The appearance of faceting is associated with the onset of the formation of the (2√2 × √2)R45° structure on the (100) face. The oxygen induced faceting and the oxygen surface meshes are reversible with coverages. At saturation coverage, a non-reversible surface transition between the c(2 × 2) and (2√2 × √2)R45° superstructures is observed at 420 ± 20 K. The importance of impurity traces on the surface meshes is emphasized. Oxygen coverage at saturation is independent of the studied faces and adsorption temperature. Faceting occurs at a critical coverage value, whatever the stepped faces and adsorption temperature are. Models of the oxygen structure on the (h10) stepped faces are discussed.     

Adsorption of sodium and its effect upon some electric properties of clean germanium (111) surfaces

The effect of adsorbed Na on the surface conductivity, Δσ, and surface recombination velocity, S, of a clean (114)Ge surface is studied. The surface conductivity is a complicated function of the surface Na concentration, N_Na; at N_Na ≈ 1.5 × 10¹³ atoms/cm², it has a minimum; at ca. (3–5) × 10¹⁴atoms/cm², it has a maximum. For a monolayer coverage (ca. 7.2 × 10¹⁴atoms/cm²) the values of Δσ are not much different from those of a clean Ge surface. The surface recombination velocity is a three-valued function of the surface potential, U_S (calculated from the Δσ values), depending on the Na overlayer coverage and heat treatment of the sample. Three different surface structures (LEED data) were found to correspond to the three S versus U_S curves reported here. Thermal desorption studies show that Na is desorbed in a wide temperature interval. Two peaks have been isolated, studied and discussed. At low coverages a single peak is found to exist, which obeys the first-order desorption kinetics, with a desorption energy of (52 ± 3)kcal/mol. This peak is attributed to the surface defects. For coverages close to$\text{1}\text{4}$ monolayer a new peak was observed in the spectrum. The desorption energy of this binding state exceeds that of all the other states. When the overlayer coverage is increased, this peak is shifted to higher temperatures, as predicted for a half-order desorption kinetics. By comparing also with LEED data, it may be concluded that this most tightly bound sodium has formed on the Ge(111) surface patches of an ordered structure in which one Na atom is bonded to three Ge atoms.     

Effect of surface orientation and sulfur coverage on the oxidation of carbon on Ni surfaces

The reaction between adsorbed oxygen and segregated carbon on a cylindrical nickel single-crystal has been examined with Auger electron spectroscopy (AES) and temperature programmed desorption (TPD), for a range of surface orientation, oxygen exposure, and sulfur coverage. It was found that for small oxygen exposures, surface carbon and surface oxygen react during TPD to form a CO desorption peak, labeled β₁. The β₁ CO peak temperature and peak shape vary with orientation. At higher oxygen coverages, the CO desorption peak split into low-temperature and high-temperature peaks. The behavior of the β₁ CO desorption peak for large oxygen exposures is consistent with a model of the carbon-oxygen recombination reaction in which the morphologies of the initial carbon and oxygen phases change during oxygen exposure as a result of repulsive lateral interactions. High oxygen exposures result in the formation of large regions of contact between the two phases; this is believed to produce the low-temperature β₁ CO desorption peak. Small segregated-sulfur coverages, and low oxygen exposures, caused the β₁ CO peak to shift to lower temperatures for all orientations. Sulfur is believed to cause more frequent contact between carbon and oxygen for small oxygen exposures because it compresses the adsorbed oxygen and segregated carbon into the sulfur-free areas of the surface. Large coverages of segregated sulfur inhibited carbon segregation on some, and oxygen adsorption on most, orientations. The absence of reactant species explains the disappearance of the β₁ CO peak during TPD from orientations which had a high sulfur coverage.     

Electronic properties of self-assembled quantum dots of sodium on Cu(1 1 1) and their interaction with water

The electronic properties of thin films of Na on Cu(1 1 1) and their interaction with water have been investigated at room temperature by high resolution electron energy loss spectroscopy. The first Na layer is characterized by two features tentatively assigned to charge density waves. The second Na layer grows as small islands. The loss spectrum of this layer shows a feature at 3.0 eV identified as a Mie resonance. Increasing alkali coverage, Na islands form a continuous film, as indicated by the appearance of a Na surface plasmon and by the disappearance of the Mie resonance. Water vapour strongly interacts with Na layers as shown by the OH-Na vibration whose frequency shifts from 36 meV to 53 meV as a function of alkali coverage.     

The mesoscopic and microscopic structural consequences from decomposition and desorption of ultrathin oxide layers on Si(100) studied by scanning tunneling microscopy

The spatially inhomogeneous decomposition and desorption reaction of oxide layers with coverage 1-0.3 monolayers (ML) from a silicon (100) surface has been studied using scanning tunneling microscopy (STM). After desorption, microscopic changes to the (2 × 1) reconstruction produce two variations on the dimer row reconstruction with decreased surface atom density. A (2 × n) vacancy chain reconstruction and a c(4 × 4) incomplete row reconstruction were observed; a structure for the latter is proposed. Both reconstructions are metastable, reforming the (2 × 1) reconstruction upon heating. At greater length scales during desorption from an initial 1.0 ML coverage, the mesoscopic changes to the surface structure include pitting and roughening, with up to a measured 20 fold increase in the edge density as compared to the clean Si(100) surface.

These structural changes suggest a reaction mechanism involving a substantial rearrangement of the substrate silicon. From an initial 1.0 ML oxygen coverage, using measured void size distributions at total desorption levels of 13% and below — before voids have begun to coalesce — the evolution of void sizes during initial desorption can be followed. A mechanism for desorption is proposed in which silicon atoms must diffuse from adjacent clean surface area to the oxide boundary, producing a reactive complex from which SiO is desorbed. Void growth rates derived from two rate limiting cases for this desorption reaction mechanism can be compared to measured results. We show that the measured void area evolution is consistent with a reaction mechanism where the rate limiting step for monolayer desorption is the promotion of a silicon atom in a lattice site to a mobile monomer within the void.     

Effects of potassium on the adsorption and dissociation of CH3Cl on Pd(100)

The effects of potassium on the adsorption and dissociation of CH₃Cl on a Pd(100) surface has been investigated by ultraviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES), electron energy loss spectroscopy (in the electronic range EELS), temperature-programmed desorption (TPD) and work function change. In contrast to the clean surface, the adsorption of CH₃Cl caused a significant work function increase, 0.9-1.4 eV, of potassium-dosed Pd. Preadsorbed K enhanced the binding energy of CH₃C1 to the surface and induced the dissociation of adsorbed molecules. The extent of the dissociation increased almost linearly with the potassium content. The appearance of a new emission in the UPS spectrum at 9.2 eV, attributed to adsorbed CH₃ species, and the low-temperature formation of ethane suggest that a fraction of adsorbed CH₃Cl dissociates even at 115–125 K on potassium-dosed Pd(100). At the same time, a significant part of adsorbed CH₃ radical is stabilized, the reaction of which occurs only at 250–300 K. By means of TPD measurements, H₂, CH₄, C₂H₆, C₂H₄, KCl and K were detected in the desorbing gases. The results are interpreted by assuming a through-metal electronic interaction at low potassium coverage and by a direct interaction of the Cl in the adsorbed CH₃Cl with potassium at high potassium coverage. The latter proposal is supported by the electron excited Auger fine structure of the Cl signal and by the formation of KCl in the desorbing gases.     

Secondary ion emission processes of sputtered alkali ions from alkali/Si(100) and Si(111)

The secondary alkali ion yield vs. the work function change (Δφ) of Na, K and Cs/Si(100) and Si(111) was measured to discuss the details of secondary ion emission processes. In the case of alkali/metal systems, the secondary ion emission is explained by the electron tunneling model. In this model, the ionization of the ejected atom occurs as a result of electron resonant tunneling through the potential barrier separating an atom and a metal, and the secondary ion yield depends on exponentially the work function change of metal surface. For alkali/Si(100) systems, the secondary ion emission processes are explained in terms of the electron tunneling model since the secondary alkali ion yield vs. the work function change (Δφ) follows the exponential manner. However, it is not easy to apply the simple electron tunneling model to our experimental results for alkali/Si(111) systems. There is the essential difference in surface structures between Si(100) and Si(111). Therefore, it is suggested that the local electronic environment around the adsorbates might be taken into consideration for alkali/Si(111) systems.     

Adsorption and reaction of oxygen and deuterium on a Pd(110) surface, studied by Δφ and TDS

The co-adsorption of oxygen and deuterium at 100 K on a Pd(110) surface has been studied by measurements of the change in work function (Δφ) and by thermal desorption spectroscopy (TDS). When the surface with co-adsorbed species is heated, the adsorbates O and D react to form D₂O which desorbs from the surface at T > 200 K. The D₂O desorption peaks shift continuously to lower temperatures as the surface D coverage (θ_D) increases. The maximum production of D₂O is estimated to be 0.26 ML (1 ML = 9.5 × 10¹⁴ atoms cm⁻²), resulting from reaction in a layer containing 0.65 ML D and 0.3 ML O. The maximum work function increase caused by adsorption of D to saturation onto oxygen precovered Pd(110) decreases almost linearly with Δφ_O of the oxygen precovered surface. On a surface with pre-adsorbed D however, the maximum Δφ increase contributed by oxygen adsorption decreases abruptly at Δφ_D > 200 mV. This sharp change occurs at θ_D > 1 ML and is believed to be associated with the development of the reconstructed (1 × 2) phase of D/Pd(110).     

Oxidation of heated diamond C(100):H surfaces

This paper extends a previous study (Pehrsson and Mercer, submitted to Surf. Sci.) on unheated, hydrogenated, natural diamond (100) surfaces oxidized with thermally activated oxygen (O^*₂). In this paper, the oxidation is performed at substrate temperatures from T_sub=24 to 670°C. The diamond surface composition and structure were then investigated with high resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES), electron loss spectroscopy (ELS) and low energy electron diffraction (LEED).

The oxygen coverage (θ) increased in two stages, as it did during oxidation at T<80°C. However, there are fundamental differences between the oxidation of nominally unheated and heated diamond surfaces. This difference is attributed to simultaneous adsorption and rapid desorption of oxygen species at higher temperatures; the desorption step is much slower without heating. The initial oxidation rates were similar regardless of the substrate temperatures, but the peak coverage (θ) was lower at higher temperatures. For example, θ plateaued at 0.4±0.1 ML at 600°C. The lower saturation coverage is again attributed to oxygen desorption during oxidation. Consistent results were obtained on fully oxidized surfaces, which when heated in vacuum to T_sub=600°C, lost 60% of their adsorbed oxygen. ELS revealed few C=C dimers on the oxidized surfaces, and more graphitization than on unheated surfaces. Oxidation at elevated temperatures also increased the carbonyl to ether ratio, reflecting etching-induced changes in the types of surface sites. The carbonyl and C–H stretch frequencies increased with oxygen dose due to formation of higher oxidation states and/or hydrogen bonding between adjacent groups. The oxygen types did not interconvert when the oxidized surfaces were heated in vacuum. Oxygen desorption generated a much more reactive surface than heating-induced dehydrogenation of the smooth, hydrogenated surface.