Positron lifetime spectrometer for metal studies

The instrument to be described is of the fast-slow coincidence type based on the well known time-to-amplitude conversion principle. Simplicity in circuit design has been achieved by using IC components. Special attention has been paid to the fast response and the temperature stability of the instrument. This fast reponse allows the omission of the pile-up limiter circuits. The temperature stability is adequate (5 psec/°C) for measurements to be made under normal laboratory conditions. Positron lifetimes were measured in both annealed and deformed copper.     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

Band gap states of V and Cr in 6H-silicon carbide

Ti, V and Cr in n-type 6H-SiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive isotopes ⁴⁸V and ⁵¹Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements during the elemental transmutation of these isotopes to ⁴⁸Ti and ⁵¹V respectively revealed the corresponding concentration changes of band gap states. Thus, three levels were identified in the band gap: a Cr level at 0.54 eV and two V levels at 0.71 and 0.75 eV below the conduction band edge. There are no deep levels of Ti in the upper part of the band gap. Received: 28 April 1997/Accepted: 16 May 1997     

飞秒激光改性6H-碳化硅晶体表面光电导增益现象研究

半绝缘6H型碳化硅(6H-SiC)具有高电阻率性质,在可见光照射下进行光电导测量时,通常光生电流很小;然而经过飞秒激光辐照改性之后,发现在可见光波段的光电导有明显的增益.本文利用紫外-可见-近红外吸收谱、X射线光电子能谱和发光光谱测量分析了激光改性之后碳化硅样品的光谱吸收、发射和晶体元素比例变化情况.分析认为碳化硅光电导增益的原因是飞秒激光辐照过程改变了碳化硅表面的硅碳元素的原子浓度比,形成新的物质结构形式,从而导致了表面光电导性能的提高.     

Positron lifetime and 2D-ACAR studies of divacancies in Si

We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V₂) with the definite charge states, V ₂ ⁰ , V ₂ ^–1 or V ₂ ^–2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V ₂ ^– using a specimen containing oriented divacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO₂ on the sample surface during annealing.     

Positron lifetime spectroscopy in nanocrystalline iron

First positron annihilation measurements were performed on nanocrystalline iron specimens which are polycrystals with very small crystallite size (5–10 nm). The lifetimes τ₁ = 180 ± 15 ps, τ₂ = 360 ± 30 ps and long-lived components between 1 and 4 ns are attributed to vacancy-size free volumes in the crystallite interfaces, to microvoids at the intersections of three interfaces, and to positronium formation in larger voids, respectively.     

Positron lifetime measurements inn- andp-type silicon

Positron lifetime measurements were carried out in four different samples of silicon, namelyn-type (P-doped) 75 Ωcm,n-type (Sb-doped) 0.018 Ωcm,p-type (B-doped) 60 Ωcm andp-type (B-doped) 0.02 Ωcm. The measurements were made at room temperature and at 77K. A positron lifetime of τ₁=(230±2) psec was found for all samples, independant of dopant or temperature. Paper A 17 presented at 3 rd Internat'l Conf. Positron Annihilation. Otaniemi, Finland (August 1973).     

Positron lifetime measurement in NaNO2

Positron lifetimes in NaNO₂ were measured as a function of temperature. The lifetime spectra consisted of one component, and could not be resolved into two component. The positron trapping model is not applicable in this case. Observed changes of lifetimes around the transition temperature could not be understood only by the volume dilatation, but they must be affected by the ferro-para electric phase transition     

Positron lifetime measurements in aliphatic hydrocarbons

The positron lifetimes and relative intensities were measured in highly purified liquid and solid hydrocarbons. It was found that most of the lifetime parameters changed at the melting point of the samples and their values were lower in the solid than in the liquid phase. A study of hexane isomers was also performed.     

SmFeAsO材料的正电子寿命研究

首次用正电子湮灭寿命谱仪（PALS）测量SmFeAsO多晶样品常温下的寿命谱,得到两个寿命成分1516 ps和2903 ps,根据捕获模型得到正电子在SmFeAsO中湮灭的体寿命为1870 ps,与理论计算（广义梯度近似）得到的SmFeAsO单晶中的正电子体寿命173 ps符合较好.基于中性原子叠加模型-有限差分方法(SNA-FD)的理论计算得到正电子与单晶SmFeAsO中各个原子价电子的总湮灭率是其与各个原子核心内层电子总湮灭率的106倍,正电子与Fe,As,Sm,O原子的电子湮灭的概率之比是1∶13∶12∶1.     

SmFeAsO材料的正电子寿命研究

首次用正电子湮灭寿命谱仪（PALS）测量SmFeAsO多晶样品常温下的寿命谱,得到两个寿命成分1516 ps和2903 ps,根据捕获模型得到正电子在SmFeAsO中湮灭的体寿命为1870 ps,与理论计算（广义梯度近似）得到的SmFeAsO单晶中的正电子体寿命173 ps符合较好.基于中性原子叠加模型-有限差分方法(SNA-FD)的理论计算得到正电子与单晶SmFeAsO中各个原子价电子的总湮灭率是其与各个原子核心内层电子总湮灭率的106倍,正电子与Fe,As,Sm,O原子的电子湮灭的概率之比是1∶13∶12∶1. 关键词： 高温超导 正电子寿命     

Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide

We have investigated transport characteristics of epitaxial graphene grown on semi-insulating silicon-face 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N₂ pressure atmosphere. We have succeeded in forming 1–2 layers of graphene on SiC in controlled manner. The surface morphology of formed graphene was analyzed by atomic force microscopy (AFM), low-energy electron diffraction (LEED) and low-energy electron microscope (LEEM). We have confirmed single-layer graphene growth in average by this method. Top-gated, single-layer graphene field-effect transistors (FETs) were fabricated on epitaxial graphene grown on 4H-SiC. Increased on/off ratio of nearly 100 at low temperature and extremely small minimum conductance (0.018–0.3 in 4 e²/h) in gated Hall-bar samples suggest possible band-gap opening of single-layer epitaxial graphene grown on Si-face SiC.     

Positron lifetime as a function of grain size

Published data on positron annihilation lifetime in copper as a function of grain size have been analyzed to show that there is a linear relationship between the internal grain boundary surface area, per unit volume,S _v, and the positron lifetime, τ. The analysis indicates that grain boundaries are important in the trapping of positrons. It is suggested that the slope of the resulting straight line,dS _v/dτ, can be used to determine the annihilation rate of the grain boundaries.     

Positron lifetime study of molybdenum neutron-irradiated at various temperatures

Positron Lifetime measurements reveal that neutron irradiation at 350 and 400°C can produce sub-electron microscopic voids in Mo. The results show that the lifetime in voids reaches a saturation value with increasing void size to a dimension less than 20 Å. It is suggested that the difference among known data for τ₂ ? 450 ps can be attributed to differences in the metal-void interface and gaseous conditions within the void.     

The first spectroscopic observation of germanium carbide

The gas phase spectrum of the germanium carbide radical has been observed at low temperature in emission from a corona excited supersonic expansion source. Many vibrational bands involving the Ω = 0, 1, and 2 components of the (2)³Π–X³Π system were recorded and analyzed. The equilibrium transition energy is found at 21120.3 cm⁻¹, in good agreement with theoretical predictions. The fundamental vibrational frequency for the lowest energy ground state Ω = 2 component is 795.3 cm⁻¹.     

Positron lifetime experiments in low temperature 3He gas

Positron lifetime spectra were measured in ³He for temperatures 3–16 K and densities 120–432 amagat. Free positron and positron-³He clusters, as well as positronium induced cavities in the gas, are observed. Data are compared with previous work in ⁴He.     

Positron annihilation in diamond,silicon and silicon carbide

Recent positron lifetime and doppler broadening results on silicon, diamond and silicon carbide are presented in this contribution. In as-grown Czochralski Si ingols vacancies are found to be retained after growth at concentrations typically around 3×10¹⁶/cm³. 10 MeV eleciron irradiation of variously doped Si wafers shows that only high doping concentrations well in excess of the interstitial oxygen concentration causes an increase in the amount of monovacancies retained.In porous silicon very long-lived positronium lifetimes in the range 40–90 ns are found. Polycrystalline diamond films contain various types of vacancy agglomerates but these are found to be inhomogeneously distributed from crystallite to crystallite. Electron irradiation of silicon carbide results in two vacancy-related lifetimes which are interpreted as resulting from carbon and silicon vacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994