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1.
New dithienothiophene‐containing conjugated polymers, such as poly(2,6‐bis(2‐thiophenyl‐3‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 4 and poly(2,6‐bis (2‐thiophenyl‐4‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 8 have been successfully synthesized via Stille coupling reactions using dodecyl‐substituted thiophene‐based monomers, bistributyltin dithienothiophene, and bistributyltin bithiophene; these polymers have been fully characterized. The main difference between the two polymers is the substitution position of the dodecyl side chains in the repeating group. Grazing‐incidence X‐ray diffraction (GI‐XRD) gave clear evidence of edge‐on orientation of polycrystallites to the substrate. The semiconducting properties of the two polymers have been evaluated in organic thin film transistors (OTFTs). The two conjugated polymers 4 and 8 exhibit fairly high hole carrier mobilities as high as μave = 0.05 cm2/Vs (ION/OFF = 3.42 × 104) and μave = 0.01 cm2/Vs, (ION/OFF = 1.3 × 105), respectively, after thermal annealing process. The solvent annealed films underwent reorganization of the molecules to induce higher crystallinity. Well‐defined atomic force microscopy (AFM) topography supported a significant improvement in TFT device performance. The hole carrier mobilities of the solvent annealed films are comparable to those obtained for a thermally annealed sample, and were one‐order higher than those obtained with a pristine sample. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010  相似文献   

2.
An ultrathin poly(methyl methacrylate) (PMMA) buffer layer was developed to improve the performance of n‐channel organic thin‐film transistors (OTFTs). The 8 nm‐thick PMMA film, prepared by spin‐coating, provided a very smooth surface and a uniform coverage on SiO2 surface reproducibly, which was confirmed by X‐ray reflectivity (XR) measurement. Then, we fabricated N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C13) thin‐film transistors with and without this 8 nm‐thick PMMA insulating layer on SiO2 gate insulators and achieved one‐order increase of field‐effect mobility (up to 0.11 cm2/(Vs) in a vacuum), one‐half decrease of threshold voltage, and reduction of current hysteresis with the PMMA layer. Only TFTs with the PMMA layer displayed n‐channel operation in air and showed field‐effect mobility of 0.10 cm2/(Vs). We consider that electrical characteristics of n‐channel OTFTs were considerably improved because the ultrathin PMMA film could effectively passivate the SiO2 insulator surface and decrease interfacial electron traps. This result suggests the importance of the ultrathin PMMA layer for controlling the interfacial state at the semiconductor/insulator interface and the device characteristics of OTFTs. Copyright © 2009 John Wiley & Sons, Ltd.  相似文献   

3.
A new semiconducting polymer, poly((5,5‐E‐α‐((2‐thienyl)methylene)‐2‐thiopheneacetonitrile)‐alt‐2,6‐[(1,5‐didecyloxy)naphthalene])) (PBTADN), an alternating copolymer of 2,3‐bis‐(thiophene‐2‐yl)‐acrylronitrile and didecyloxy naphthalene, is synthesized and used as an active material for organic thin film transistors (OTFTs) and organic solar cells. The incorporation of 2,3‐bis‐(thiophene‐2‐yl)‐acrylronitrile as an electron deficient group and didecyloxy naphthalene as an electron rich group resulted in a relatively low bandgap, high charge carrier mobility, and finally good photovoltaic performances of PBTADN solar cells. Because of the excellent miscibility of PBTADN and PC71BM, as confirmed by Grazing Incident X‐ray Scattering (GIXS) measurements and Transmission Electron Microscopy (TEM), homogeneous film morphology was achieved. The maximum power conversion efficiency of the PBTADN:PC71BM solar cell reached 2.9% with a Voc of 0.88 V, a short circuit current density (Jsc) of 5.6 mA/cm2, and a fill factor of 59.1%. The solution processed thin film transistor with PBTADN revealed a highest saturation mobility of 0.025 cm2/Vs with an on/off ratio of 104. The molecular weight dependence of the morphology, charge carrier mobility, and finally the photovoltaic performances were also studied and it was found that high molecular weight PBTADN has better self assembly characteristics, showing enhanced performance. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011  相似文献   

4.
This digest aims to provide organic chemists with an overview of recent progress on n-type organic semiconductors for application in organic thin film transistors (OTFTs) with an emphasis on molecular design. Herein, we survey n-type organic semiconductors with field effect mobility of 1 cm2/Vs or higher in OTFTs after a brief introduction to the structure and operation of OTFTs and discussion of two key factors (frontier molecular orbitals and molecular packing) of organic semiconductors. On the basis of this survey, we finally reach conclusions on the current status of n-type organic semiconductors for OTFTs and provide an outlook for molecular design.  相似文献   

5.
Novel alkoxy anthracene (ODA)‐based polymeric semiconductors were designed for polymer solar cell applications. Alkoxyanthracene, which contains many π electrons and electron donating group, was easily synthesized. The copolymers, poly(alkoxy anthracene‐alt‐thiophene benzothiadiazole thiophene) poly(ODA‐TBT) and poly(alkoxy anthracene‐alt‐benzothiadiazole) poly(ODA‐BT), have been obtained by Suzuki coupling polymerization. Both polymers have ODA unit as a donor and benzothiadiazole as an acceptor. ODA‐TBT has thiophene linkages between ODA and benzothiadiazole. The optical, thermal, and electrochemical properties have been investigated by UV–visible absorption, thermal gravimetric analysis, differential scanning calorimetry, and CV. Organic thin‐film transistor using polymers showed that the hole mobility of poly(ODA‐alt‐TBT) was around 3.6 × 10?3 cm2/Vs with on/off ratio of 9.91 × 105 while that of poly(ODA‐alt‐BT) was around 1.21 × 10?2 cm2/Vs with on/off ratio of 2.64 × 106. Organic photovoltaic performance based on polymers were evaluated with a configuration of ITO/PEDOT:PSS/active layer/LiF/Al. Poly(ODA‐TBT) exhibits a short circuit current (Jsc) of 3.9 mA/cm2 and power conversion efficiency (PCE) of 1.4%, and poly(ODA‐BT) exhibits the Jsc of 6.4 mA/cm2 and PCE of 2.2%. The better device performance of poly(ODA‐BT) is attributed to its charge transfer ability and enhanced mobility and crystallinity although poly(ODA‐BT) does not have extended π‐conjugation due to twisted structure compared with poly(ODA‐TBT). © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 1306–1314  相似文献   

6.
A new p‐type conjugated copolymer, poly(9,10‐diethynylanthracene‐alt‐9,9‐didodecylfluorene) (PDADF), which is composed of ethynyl‐linked alternating anthracene/fluorene, is synthesized via a palladium(II)‐catalyzed Sonogashira coupling reaction with 9,10‐diethynylanthracene and 2,7‐diiodo‐9,9‐didodecyl‐fluorene. The obtained polymer is confirmed by FTIR, 1H‐NMR, 13C‐NMR and elemental analysis. The PDADF had very good solubility in organic solvents such as chloroform and had a weight average molecular weight of 29,300 with a polydispersity index of 1.29. The PL maximum of the polymer was found at 533 and 568 nm for a solution and 608 nm for film, respectively. The highest occupied molecular orbital (HOMO) energy of the polymer is ?5.62 eV as measured via cyclic voltammetry (CV). A solution‐processed thin film transistor device showed a carrier mobility value of 6.0 × 10?4 cm2/Vs with a threshold voltage of ?17 V and a capacitance (Ci) of 10 nF/cm2. The out‐of‐plane and in‐plane GIXD pattern of spin‐coated polymer on SiO2 dielectric surfaces showed an amorphous halo near 2θ = 20°. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1609–1616, 2009  相似文献   

7.
A series of new donor–acceptor‐type low‐band‐gap semiconducting polymers were synthesized as electron donors for organic photovoltaic cells. The polymers comprised quinoxaline derivatives as the acceptors and a benzodithiophene (BDT) derivative as the donors. 5,8‐Dibromoquinoxaline (Qx), 8,11‐dibromobenzo[a]phenazine (BPz), 10,13‐dibromodibenzo[a,c]phenazine (DBPz), and 8,11‐dibromo‐5‐(9H‐carbazol‐9‐yl)benzo[a]phenazine) (CBPz) were synthesized and polymerized with 2,6‐bis(trimethyltin)?4,8‐diethylhexyloxybenzo‐[1,2‐b;3,4‐b]dithiophene (BDT) through Stille cross‐coupling to produce four types of fully conjugated semiconducting polymers: PBDT‐Qx, PBDT‐BPz, PBDT‐DBPz, and PBDT‐CBPz , respectively. Intramolecular charge transfer between the electron donating and accepting units in the polymeric backbone induced a broad absorption from 300 to 800 nm. The optical band gap energies of the polymers were measured from their absorption onsets to be 1.54–1.80 eV depending on the polymer structure. Solution‐processed field‐effect transistors were fabricated to measure the hole mobilities of the polymers, and bulk hetero‐junction photovoltaic devices were fabricated using the synthesized polymers as electron donors and fullerene derivatives as electron acceptors. One of these devices showed a high power conversion efficiency of 3.87% with an open‐circuit voltage of 0.78 V, a short‐circuit current of 9.68 mA/cm2, and a fill factor of 0.51 under air mass 1.5 global (AM 1.5 G) illumination conditions (100 mW/cm2). © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013 , 51, 4136–4149  相似文献   

8.
Two conjugated polymers (CPs) P‐tCzC12 and P‐tCzC16 comprising alternating dithieno[3,2‐b:6,7‐b]carbazole and 4,4′‐dihexadecyl‐2,2′‐bithiophene units have been designed and synthesized. Upon thermal annealing, they can form ordered thin films in which the polymer backbones dominantly adopted an edge‐on orientation respective to the substrate with a lamellar spacing of ≈24 Å and a π‐stacking distance of ≈3.7 Å. Organic thin‐film transistors (OTFTs) were fabricated by solution casting. A hole mobility of 0.39 cm2 V−1s−1 has been demonstrated with P‐tCzC16. This value is the highest among the CPs containing heteroacenes larger than 4 rings.  相似文献   

9.
Thermotropic POSS‐containing poly(methacrylate) with long alkyl chain tethered polyhedral oligomeric silsesquioxane (POSS) in the side chain and the block copolymers (PMMA‐b‐PMAC11POSS) were developed by through living anionic polymerization. The resulting polymers indicated a phase transition temperature at 112 °C from spherocrystal to isotropic phase. The POSS‐containing polymer segments tended to form matrix of microphase‐separated nanostructures in the bulk even in the very low volume fraction, for instance, PMMA cylindrical nanostructure was obtained by PMMA175b‐PMAC11POSS11 (?PMAC11POSS = 0.44). The control of thin film morphology was carried out by not only solvent annealing, but also thermal annealing, resulting in the formation of well‐ordered dot‐ and fingerprint‐type nanostructures. This is the first report in a series of POSS‐containing block polymers that are capable for thermal annealing to generate well‐ordered microphase‐separated nanostructures in thin films. The novel thermotropic POSS‐containing block copolymer offers a promising material for block copolymer lithography. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011  相似文献   

10.
The use of a hyperbranched polymer as a building block for the synthesis of a microporous organic polymer was demonstrated. Hyperbranched polyphenylenes (HBPs) were prepared from (3,5‐dibromophenyl)boronic acid, which contained numerous unreacted bromophenyl end groups. Utilizing metal‐catalyzed coupling reactions between these functional groups, cross‐linked porous polymers were obtained. Although the HBPs did not show porosity, their cross‐linked polymers had highly porous structures with Brunauer–Emmett–Teller surface areas of up to 2030 m2/g. An insoluble porous thin film was fabricated by spin casting of a solution containing a HBP followed by Sonogashira cross‐coupling reaction. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015 , 53, 2336–2342  相似文献   

11.
Polyhedral oligomeric silsequioxane (POSS), having eight hydroxyl groups for the preparation of nanocomposites with polyimide (PI) was synthesized by the direct hydrosilylation of allyl alcohol with octasilsesquioxane (Q8M8H) with platinum divinyltetramethyl disiloxane Pt(dvs) as a catalyst. The structure of allyl alcohol terminated‐POSS (POSS‐OH) was confirmed by FTIR, NMR, and XRD. A high performance, low‐k PI nanocomposite from pyromellitic dianhydride (PMDA)‐4,4'‐oxydianiline (ODA) polyamic acid cured with POSS‐OH was also successfully synthesized. The incorporation of POSS‐OH into PI matrix reduced dielectric constant of PI without loosing mechanical properties. Furthermore, the effects of POSS‐OH on the morphology and properties of the PI/POSS‐OH nanocomposites were investigated using UV–vis, FTIR, XRD, SEM, AFM, transmission electron microscope (TEM), TGA, and contact angle. The homogeneous dispersion of POSS particles was confirmed by SEM, AFM, and TEM. The nanoindentation showed that the modulus increased upon increasing the concentration of POSS‐OH in PI, whereas the hardness did not increase very much with respect to loading of POSS, due to soft‐interphase around POSS molecules in the resulting nanocomposites. Overall results demonstrated the nanometer‐level integration of the polymer and POSS‐OH. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 5887–5896, 2008  相似文献   

12.
Two donor–acceptor conjugated polymers with azaisoindigo as acceptor units and bithiophene and terthiophene as donor units have been synthesized by Stille polymerization. These two polymers have been successfully applied in field‐effect transistors and polymer solar cells. By changing the donor component of the conjugated polymer backbone from bithiophene to terthiophene, the density of thiophene in the backbone is increased, manifesting as a decrease in both ionization potential and in electron affinity. Therefore, the charge transport in field‐effect transistors switches from ambipolar to predominantly hole transport behavior. PAIIDTT exhibits hole mobility up to 0.40 cm2/Vs and electron mobility of 0.02 cm2/Vs, whereas PAIIDTTT exhibits hole mobility of 0.62 cm2/Vs. Polymer solar cells were fabricated based on these two polymers as donors with PC61BM and PC71BM as acceptor where PAIIDTT shows a modest efficiency of 2.57% with a very low energy loss of 0.55 eV, while PAIIDTTT shows a higher efficiency of 6.16% with a higher energy loss of 0.74 eV. Our results suggest that azaisoindgo is a useful building block for the development of efficient polymer solar cells with further improvement possibility by tuning the alternative units on the polymer backbone. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 2691–2699  相似文献   

13.
The synthesis of donor–acceptor type semiconducting copolymers is described. Quinoxaline (QX) or difluorinated quinoxaline (DFQX) derivatives serve as electron acceptors, while thiophene (T) or selenophene (Se) serve as electron donors. Alternating polymers are synthesized through Stille cross‐coupling, and their thermal stability, optical and electrochemical properties, field‐effect carrier mobilities, film crystallinities, and photovoltaic performances are investigated. The intramolecular charge transfer between the electron‐donating and electron‐accepting units in the backbone induces absorption from 450 to 750 nm. The optical band‐gap energies of the polymers are between 1.65 and 1.73 eV, and depend on the polymer structure. Organic photovoltaic cells fabricated using a polymer composed of DFQX and selenophene (PSe‐DFQX) exhibit a power conversion efficiency of 5.14% with an open‐circuit voltage of 0.78 V, a short‐circuit current density of 11.71 mA/cm2, and fill factor of 0.57 under AM 1.5 G irradiation (100 mW cm?2). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015 , 53, 1904–1914  相似文献   

14.
Three new benzothieno[3,2‐b]thiophene ( BTT ; 1 ) derivatives, which were end‐functionalized with phenyl ( BTT‐P ; 2 ), benzothiophenyl ( BTT‐BT ; 3 ), and benzothieno[3,2‐b]thiophenyl groups ( BBTT ; 4 ; dimer of 1 ), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTT s was developed, which enabled the efficient realization of new BTT ‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT , which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm2 V?1 s?1 and a current on/off ratio of 1×107, as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.  相似文献   

15.
A series of new polythiophene derivatives containing a thiazole ring as an electron deficient unit were successfully synthesized via Stille coupling reactions. Synthesized polymers were classified into two types (H‐shape packing and A‐shape packing) based on their interdigitated packing structure induced by different side chain configurations. The thiophene derivatives that contained a thiazole unit ( PT50Tz50 , PTz100 , and PTTz ) exhibited much better thermal stability than did the full thiophene polymers ( PT100 and PTT ). The polymers containing the thiazole unit ( PTz100 and PTTz ) showed a red‐shifted absorption spectrum with clear vibronic structure. In addition, the XRD and AFM results showed that the polymers containing the thiazole unit and interdigitated H‐shape exhibited much better ordered and connected intermolecular structures than did other polymers. The improved intermolecular ordering and surface morphologies directly facilitated charge carrier transport in thin film transistor (TFT) devices, without introducing charge traps, and yielded higher solar cell performance. Among these polymers, the PTTz copolymer exhibited the best TFT performance (μ = 0.050 cm2 V?1 s?1, on/off ratio = 106, and Vth = ?2 V) and solar cell performance (PCE = 1.39%, Jsc = 6.58 mA cm?2, and Voc = 0.58 V). © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011  相似文献   

16.
A series of new phenothiazylene vinylene‐based semiconducting polymers, poly[3,7‐(4′‐dodecyloxyphenyl)phenothiazylene vinylene] ( P1 ), poly[3,7‐(4′‐dodecyloxyphenyl)phenothiazylene vinylene‐alt‐1,4‐phenylene vinylene] ( P2 ), and poly[3,7‐(4′‐dodecyloxyphenyl)phenothiazylene vinylene‐alt‐2,5‐thienylene vinylene] ( P3 ), have been synthesized via a Horner‐Emmons reaction. FTIR and 1H NMR spectroscopies confirmed that the configurations of the vinylene groups in the polymers were alltrans (E). The weight‐averaged molecular weights (Mw) of P1 , P2 , and P3 were found to be 27,000, 22,000, and 29,000, with polydispersity indices of 1.91, 2.05, and 2.25, respectively. The thermograms for P1 , P2 , and P3 each contained only a broad glass transition, at 129, 167, and 155 °C, respectively, without the observation of melting features. UV–visible absorption spectra of the polymers showed two strong absorption bands in the ranges 315–370 nm and 450–500 nm, which arose from absorptions of the phenothiazine segments and the conjugated main chains. Solution‐processed field‐effect transistors fabricated from these polymers showed p‐type organic thin‐film transistor characteristics. The field‐effect mobilities of P1 , P2 , and P3 were measured to be 1.0 × 10?4, 3.6 × 10?5, and 1.0 × 10?3 cm2 V?1 s?1, respectively, and the on/off ratios were in the order of 102 for P1 and P2 , and 103 for P3 . Atomic force microscopy and X‐ray diffraction analysis of thin films of the polymers show that they have amorphous structures. A photovoltaic device in which a P3 /PC71BM (1/5) blend film was used as the active layer exhibited an open‐circuit voltage (VOC) of 0.42 V, a short circuit current (JSC) of 5.17 mA cm?2, a fill factor of 0.35, and a power conversion efficiency of 0.76% under AM 1.5 G (100 mW cm?2) illumination. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 635–646, 2010  相似文献   

17.
In this work, we synthesized a novel organic–inorganic semitelechelic polymer from polyhedral oligomeric silsesquioxane (POSS) and poly(acrylate amide) (PAA) via reversible addition‐fragmentation chain transfer (RAFT) polymerization. The organic–inorganic semitelechelic polymers have been characterized by means of nuclear magnetic resonance spectroscopy, thermal gravimetric analysis, and dynamic mechanical thermal analysis. It was found that capping POSS groups to the single ends of PAA chains caused a series of significant changes in the morphologies and thermomechanical properties of the polymer. The organic–inorganic semitelechelics were microphase‐separated; the POSS microdomains were formed via the POSS–POSS interactions. In a selective solvent (e.g., methanol), the organic–inorganic semitelechelics can be self‐assembled into the micelle‐like nanoobjects. Compared to plain PAA, the POSS‐capped PAAs significantly displayed improved surface hydrophobicity as evidenced by the measurements of static contact angles and surface atomic force microscopy. More importantly, the organic–inorganic semitelechelics displayed typical shape memory properties, which was in marked contrast to plain PAA. The shape memory behavior is attributable to the formation of the physically cross‐linked networks from the combination of the POSS–POSS interactions with the intermolecular hydrogen‐bonding interactions in the organic–inorganic semitelechelics. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 587–600  相似文献   

18.
2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO2/Si surface. Thin film transistors prepared on SiO2/Si and n‐nonyltrichlorosilane‐modified SiO2/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO2/Si substrate gave the highest field‐effect mobility of 0.46 cm2/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm2/Vs.  相似文献   

19.
A new electron deficient unit, dimethyl‐2H‐benzimidazole (MBI), and dihydroindeno[2,1‐a]indene (ININE) moiety as electron‐rich unit were coupled to synthesize the conjugated polymers containing electron donor–acceptor pair for organic photovoltaics. ININE, MBI, and thiophene (or bithiophene) units were incorporated using Stille and Suzuki polymerization to generate poly(2,7‐(5,5,10,10‐tetrakis(2‐ethylhexyl)‐5,10‐dihydro‐ indeno[2,1‐a]indene)‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2,2‐dimethyl‐2H‐benzimidazole)) (PININEDTMBIs) (or PININEBBTMBIs). In MBI, the sulfur at 2‐position of 2,1,3‐benzothiadiazole (BT) unit was replaced with dialkyl‐substituted carbon, whereas keeping the 1,2‐quinoid form, to improve the solubility of the polymers. The field‐effect hole mobility of PININEBBTMBI was 3.2 × 10?4 cm2/Vs which was improved as compared to that of PININEDTMBI (2.7 × 10?5 cm2/Vs) caused by the introduction of bithiophene units. In case of the most efficient polymer, PININEBBTMBI, the device with the configuration of indium tin oxide (ITO)/poly(3,4‐ethylenedioxythiophene) (PEDOT):polystyrene sulfonate (PSS)/polymer:PC71BM(1:4 w/w)/Al, annealed at 100 °C for 10 min demonstrated a open circuit voltage of 0.78 V, a short‐circuit current density of 6.66 mA/cm2, and a fill factor of 0.41, leading to the power conversion efficiency of 2.11%, under white‐light illumination (AM 1.5 G, 100 mW/cm2). © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013  相似文献   

20.
We have designed and synthesized a new polymer, which could be used in the organic thin film transistor (OTFT). Poly[2,6‐bis(3′‐dodecythiophene‐2′‐yl)anthracene] (PDTAn), which is composed with anthracene moiety and dodecyl alkyl thiophene, was synthesized by oxidative polymerization using iron (III) chloride. The mole ratio of FeCl3 and monomer (4.2:1), keeping low temperature during the initiation reaction, amount of solvent, and dropping order were very important for oxidative polymerization without crosslinking. The molecular weight of the polymer (Mw) was measured to be 40,000 with 2.85 of polydispersity index by GPC. The physical and optical properties of the polymer were characterized by differential scanning calorimetry (DSC), cyclic voltammetry (CV), and optical absorption and photoluminescence (PL) spectroscopy. A field‐effect mobility of 1.1 × 10?4 cm2 V?1 S?1, a current on/off ratio of 105, and the Vth at ?15.2 V had been obtained for OTFTs using this polymer semiconductor by solution coating. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 5115–5122, 2008  相似文献   

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