Ce掺杂Bi2O3 光催化剂的制备、表征及其可见光催化性能

采用水热-焙烧法制备了Ce掺杂的可见光响应的Bi₂O₃光催化剂（Ce-Bi₂O₃）。利用 XRD、FT-IR、XPS和 UV-Vis对不同Ce-Bi₂O₃样品进行了表征分析,并以光催化降解金橙Ⅱ溶液为探针反应,考察了Ce-Bi₂O₃的可见光催化性能。结果表明,Ce掺杂可以减小催化剂的禁带宽度,使光谱响应范围向可见光拓展。掺杂的Ce可取代Bi₂O₃晶格中部分Bi,形成Bi-O-Ce键,并生成了少量铈铋复合氧化物（Bi_7.38Ce_0.62O_12.31）,它们的存在有效地抑制了光生电子-空穴对的复合,有助于提高Bi₂O₃的可见光催化活性。但焙烧时间过长将导致Ce-Bi₂O₃催化剂的表面发生烧结现象,致使其催化活性降低。可见光照射下的金橙Ⅱ光催化降解实验表明,经2 h焙烧后得到的Ce/Bi的量比为0.5 的Ce-Bi₂O₃催化剂具有最佳的光催化活性。     

透明导电铟铋氧化物薄膜的制备及其性能

以氧化铟为主体材料,以铋为掺杂材料,采用真空热蒸发方法研制出2.5%铋掺杂的透明导电氧化物薄膜(IBO)。实验表明:IBO薄膜具有良好的表面形貌,载流子浓度为3.955×1019cm-3,载流子迁移率达到50.21cm2·V-1·s-1,电导率为3.143×10-3Ω·cm,在可见光范围内的平均透过率超过82%,功函数为4.76eV。采用其作为阳极制作的OLED得到最大亮度30230cd/m2,最大电流效率为5.1cd/A。结果表明IBO是一种良好的光电器件阳极材料。     

Characteristics of X‐ray attenuation in electrospun bismuth oxide/polylactic acid nanofibre mats

The characteristics of the X‐ray attenuation in electrospun nano(n)‐ and micro(m)‐Bi₂O₃/polylactic acid (PLA) nanofibre mats with different Bi₂O₃ loadings were compared as a function of energy using mammography (i.e. tube voltages of 22–49 kV) and X‐ray absorption spectroscopy (XAS) (7–20 keV). Results indicate that X‐ray attenuation by electrospun n‐Bi₂O₃/PLA nanofibre mats is distinctly higher than that of m‐Bi₂O₃/PLA nanofibre mats at all energies investigated. In addition, with increasing filler loading (n‐Bi₂O₃ or m‐Bi₂O₃), the porosity of the nanofibre mats decreased, thus increasing the X‐ray attenuation, except for the sample containing 38 wt% Bi₂O₃ (the highest loading in the present study). The latter showed higher porosity, with some beads formed, thus resulting in a sudden decrease in the X‐ray attenuation.     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜. 研究了SrBi2Ta2O9/Bi4Ti3O12复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi4Ti3O12薄膜易于沿c轴择优生长,并有利于SrBi2Ta2O9/Bi4Ti3O12复合薄膜的生长.合理的SrBi2Ta2O9/Bi4Ti3O12厚度配比能获得较好的铁电性能和优良的抗疲劳特性,SrBi2Ta2O9/Bi4Ti3O12厚度配比为1∶3的复合薄膜的剩余极化强度和矫顽电场分别为8.1 μC/cm2 和 130 kV/cm,其无疲劳极化开关次数达1011以上.     

3D Array of Bi2S3 Nanorods Supported on Ni Foam as a Highly Efficient Integrated Oxygen Electrode for the Lithium‐Oxygen Battery

Bismuth sulfide nanorod array is directly grown on nickel foam (R‐Bi₂S₃/NF) to serve as a completely carbon and binder‐free 3D porous oxygen electrode material for lithium‐oxygen (Li‐O₂) batteries. The synergistic effect of the fast kinetics of electron transport and gas and electrolyte diffusion provided by the continuous free‐standing network structure and the excellent electrocatalytic activity of the bismuth sulfide nanorod array enables outstanding performance of the oxygen electrode. Li‐O₂ battery with the free‐standing R‐Bi₂S₃/NF oxygen electrode exhibits high energy efficiency (78.7%), good rate capability (4464 mA h g⁻¹ at 1500 mA g⁻¹), as well as excellent cyclability (146 cycles) while maintaining a moderate specific capacity of 1000 mA h g⁻¹. The effect of cathodes with different reactant (O₂) and intermediate (LiO₂) adsorbability on the product (Li₂O₂) growth model is studied by first‐principle calculations. The strong O₂ adsorption and weak LiO₂ adsorption on Bi₂S₃ drives the growth of large‐size Li₂O₂ particles via solution growth model. Remarkably, the large‐area pouch‐type Li‐O₂ battery delivers an energy density of 330 Wh kg⁻¹. The present results open up a promising avenue toward developing novel electrode architecture for high‐performance Li‐O₂ batteries through controlling morphology and functionality of porous electrodes.     

高温原位拉曼光谱研究BiFeO3陶瓷反应烧结相变过程

多铁性材料BiFeO3(BFO)由于具有潜在的磁电耦合效应而备受关注,但纯相陶瓷的制备始终是一个难点,部分原因在于对其反应烧结相变规律的认识尚不充分。高温原位拉曼光谱技术(HT-Raman)是表征复杂的固体相变及反应的有力手段。首次利用HT-Raman,研究了不同配比(1∶1, 1.03∶1和1.05∶1)的Bi2O3-Fe2O3在不同升降温速率(10和100℃·min-1)下的反应烧结相变过程,以及降温时反应产物的收缩效应。结果表明:Bi2O3-Fe2O3反应烧结生成BiFeO3的过程中,会产生中间过渡相Bi2Fe4O9和Bi25FeO39∶Bi2O3-Fe2O3配比为1.03∶1、升降温速率较快时,产物中杂相含量最少,可见Bi过量及较快的升降温速率能有效抑制杂相的生成。降温过程中,发现BFO的A1-1峰位随着温度降低发生蓝移,且二者呈良好的线性关系,这说明降温过程中BFO仅因温度变化产生晶格收缩,并没有结构相变。此外,还利用二维X射线衍射(2D-XRD)及背散射电子衍射(EBSD),表征了烧结产物的相组成及形貌。XRD结果也显示Bi过量时杂相含量较少,与拉曼结果一致。结合2D-XRD和EBSD的结果可知, Bi过量时烧结产物晶粒尺寸较大且均一,可见快速升降温有利于晶粒的成核与生长。研究结果可帮助进一步认清反应烧结规律,并指导纯相BiFeO3基陶瓷的制备。     

铈基纳米材料水热合成及储放氧性能

" 采用水热方法合成汽车尾气三效催化剂助剂材料NiO-CeO2和Bi2O3-CeO2二元纳米化合物．首先,对NiO-CeO2二元材料进行X射线分析,结果显示颗粒平均尺寸在11~12 nm,这一结果与高分辨电镜结果观察的颗粒尺寸相吻合,同在12 nm左右．同时,对NiO-CeO2二元化合物进行BET比表面积分析,结果显示：水热合成材料的比表面积在54~75 m2/g．另外,对Bi2O3-CeO2二元化合物进行X射线分析,结果显示合成材料的晶粒尺寸在8~11 nm．最后,我们分别对两种材料进行了氧化还原条件下     

Structural,magnetic, and dielectric properties of Ni–Zn ferrite and Bi_2O_3 nanocomposites prepared by the sol-gel method

Ni–Zn ferrite and Bi_2O_3 composites were developed by the sol-gel method. The structural, magnetic, and dielectric properties were studied for all the prepared samples. X-ray diffraction(XRD) was performed to study the crystal structure.The results of field emission scanning electron microscopy(FE-SEM) showed that the addition of Bi_2O_3 can increase the grain size of the Ni–Zn ferrite. Magnetic properties were analyzed by a hysteresis loop test and it was found that the saturation magnetization and coercivity decreased with the increase of Bi_2O_3 ratio. In addition, the dielectric properties of the Ni–Zn ferrite were also improved with the addition of Bi_2O_3.     

Correlation among electronic polarizability, optical basicity and interaction parameter of Bi2O3–B2O3 glasses

For optical basicity and electronic polarizability, the previous studies basically concentrate on the wavelength range of the visible light region. However, heavy metal oxides glasses have a reputation of being good materials for infrared region. In this study, new data of the average electronic polarizability of the oxide ion _O^2-, optical basicity Λ and Yamashita–Kurosawa's interaction parameter A of Bi₂O₃–B₂O₃ glasses have been calculated in a wavelength range from 404.66 to 1083.03 nm. The present investigation suggests that both _O^2- and Λ increase gradually with increasing wave number, and A decreases with increasing wave number. Furthermore, close correlations are studied among _O^2-, Λ, A and refractive index n in this paper. Particularly, it has been found that a quantitative relationship between electronic polarizability and optical basicity is observed in a wavelength range from 404.66 to 1083.03 nm. Our present study extends over a wide range of _O^2-, Λ and A values.     

Effect of WO3 on the spectroscopic properties in Er/Yb co-doped bismuth–borate glasses

The spectroscopic properties of Er³⁺/Yb³⁺ co-doped Bi₂O₃–B₂O₃–WO₃ (BBW) glasses were analyzed and discussed. The effect of WO₃ content on the absorption spectra, the Judd–Ofelt parameters Ω_t (t=2, 4, 6), emission spectra and the lifetime of the ⁴I_13/2 level and the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition were also investigated. With the substitution of WO₃ for B₂O₃, the measured lifetime of the ⁴I_13/2 level and the quantum efficiency of Er³⁺:⁴I_13/2→⁴I_15/2 transition increase from 0.98 to 1.31 ms and from 38.2% to 49.2%, respectively. The effective width of emission band and the emission cross-section both decrease slightly. And the emission spectra is analyzed via the different curve (σ_e−σ_a) of BBW glasses, the influence of OH⁻is also discussed.     

Bi2S3/BiOCl复合光催化剂的水热合成及其高活性

采用一种简便的水热法在433 K的温度下成功合成了具有不同Bi2S3质量分数的Bi2S3/BiOCl复合光催化剂,利用各种技术对其进行了表征.在紫外光照射下,以甲基橙水溶液的光催化降解为模型反应,评价了Bi2S3/BiOCl复合光催化剂的活性.研究结果表明:与纯Bi2S3和纯BiOCl相比,Bi2S3/BiOCl样品明显具有更高的光催化性能,尤其当Bi2S3在Bi2SJBiOCl中的质量分数为26.5％时,Bi2 SJBiOCl复合催化剂的光催化活性与商业P25(TiO2)的活性非常接近,而这种商业P25在紫外光照射下是公认的高效光催化剂.这种明显提高的光催化活性主要归功于光生电子和空穴在Bi2S3和BiOCl形成异质结界面上的有效转移,降低了电子-空穴对的复合.     

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

Hydrostatic pressure effect on Tc of new BiS2‐based Bi4O4S3 and NdO0.5F0.5BiS2 layered superconductors

We investigate the external hydrostatic pressure effect on the superconducting transition temperature (T_c) of new layered superconductors Bi₄O₄S₃ and NdO_0.5F_0.5BiS₂. Though the T_c is found to have a moderate decrease from 4.8 K to 4.3 K (dT_c^onset/dP = –0.28 K/GPa) for Bi₄O₄S₃ superconductor, the same increases from 4.6 K to 5 K (dT_c^onset/dP = 0.44 K/GPa) up to 1.31 GPa followed by a sudden decrease from 5 K to 4.7 K up to 1.75 GPa for NdO_0.5F_0.5BiS₂ superconductor. The variation of T_c in these systems may be correlated to an increase or decrease of the charge carriers in the density of states under externally applied pressure. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Bi2S3/BiOCl复合光催化剂的水热合成及其高活性

采用一种简便的水热法在433 K的温度下成功合成了具有不同Bi₂S₃质量分数的Bi₂S₃/BiOCl复合光催化剂,利用各种技术对其进行了表征.在紫外光照射下,以甲基橙水溶液的光催化降解为模型反应,评价了Bi₂S₃/BiOCl复合光催化剂的活性.研究结果表明:与纯Bi₂S₃和纯BiOCl相比,Bi₂S₃/BiOCl样品明显具有更高的光催化性能,尤其当Bi₂S₃在Bi₂S₃/BiOCl中的质量分数为26.5%时,Bi₂S₃/BiOCl复合催化剂的光催化活性与商业P25(TiO₂)的活性非常接近,而这种商业P25在紫外光照射下是公认的高效光催化剂.这种明显提高的光催化活性主要归功于光生电子和空穴在Bi₂S₃和BiOCl形成异质结界面上的有效转移,降低了电子-空穴对的复合.     

高纯稀土氧化铕中氯离子测定方法及干扰效应

研究了利用火焰原子吸收光谱法(FAAS)间接测定高纯稀土氧化铕中的痕量氯离子时,高纯氧化铕基体溶液对氯离子测定产生的干扰效应及消除干扰的方法。柠檬酸及8-羟基喹啉都可作为基体改进剂,且对不同含量的稀土基体溶液,其作用效果不同。以在2%的氧化铕基体溶液中,加入1%的柠檬酸为最佳。该法灵敏度高,线性范围是0.0—9.0mg/L,相关系数是0.9998,检出限1.8μg/L,相对标准偏差为3.3%,回收率为95.7%—100.2%。     

Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient

In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.     

光谱纯Y2O3,La2O3,Lu2O3中微量杂质的光致发光谱研究

测定了光谱纯稀土化合物Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３中微量杂质在４８８．０ｎｍ和５１４．５ｎｍ激光线激发下的光致发光谱以及在可见光４４５～７４１ｎｍ范围内吸收谱，Ｙ２Ｏ３，Ｌｕ２Ｏ３样品在４４８．０ｎｍ和５１４．５ｎｍ激光激发下都有发光效应，而Ｌａ２Ｏ３样品只在４８８．０ｎｍ激光激发下才发光，分析了结果表明，Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３的发光谱分别是由其存在的微量Ｅｒ＾３＋，Ｓｍ＾３＋和Ｅｕ     

Electrical properties of ZrO2-In2O3-Y2O3 and its application to a membrane for gas separation

Electrical properties of In₂O₃-doped yttria-stabilized zirconia (In-YSZ) were investigated. The solubility limit of In₂O₃ in YSZ (10 mol% Y₂O₃) is 17.5 mol%. The total conductivity depended on the concentration of In₂O₃. The activation energy of In-YSZ was higher than that of YSZ. From the oxygen partial pressure (P_o2) dependence of the total conductivity of In-YSZ, the electronic conductivity increased with increasing In₂O₃ concentration at low oxygen partial pressures and at high temperature. From the results, we discussed the applicability of In-YSZ to a membrane for hydrogen production from direct water splitting at high temperature.     

MFe2O4 and MFe@Oxide Core–Shell Nanoparticles Anchored on N‐Doped Graphene Sheets for Synergistically Enhancing Lithium Storage Performance and Electrocatalytic Activity for Oxygen Reduction Reactions

The intrinsically low electric conductivity and self‐aggregation of MFe₂O₄ during charge/discharge affect their lithium storage performance and electrocatalytic activity. To mitigate these problems, it is shown that N‐doped graphene sheets (NGS), as a highly conductive platform, finely disperse the MFe₂O₄ nanoparticles and rapidly shuttle electrons to and from the MFe₂O₄ nanoparticles. Moreover, by forming a metal@oxide core–shell nanostructure, fast electron transfer from the exterior oxide layer to NGS is achieved. Introducing NGS into MFe₂O₄ allows the composites to exhibit the comparable specific capacity (based on the total mass) to MFe₂O₄, although over 10 wt% of NGS contributes a low specific capacity of around 320–400 mAh g^?1. More importantly, introducing NGS significantly increases the cycling stability performance: 97.5% (CoFe₂O₄/NGS) and ≈100% (NiFe₂O₄/NGS) of the specific capacities have been retained after 80 cycles, far higher than the capacity retentions of CoFe₂O₄ (35.3%) and NiFe₂O₄ (43.7%) tested under otherwise identical conditions. Also demonstrated are the excellent rate capabilities of the composites. For catalyzing the oxygen reduction reaction, the activity is significantly improved when the MFe₂O₄ nanoparticles are transformed into metal@oxide core–shell nanostructure, mainly because the core–shell nanostructure exhibits lower charge transfer resistance.     

Controlled Synthesis of a High-Mobility Bi3O2.5Se2 Semiconductor by Oxidation of Bi2Se3 for Fast and Highly Sensitive Photodetectors

The search of new high-mobility two-dimensional (2D) semiconductors is crucial for the development of next-generation photodetectors, since current photodetectors based on single 2D semiconductors usually cannot simultaneously own ultrafast response rate and ultrahigh sensitivity. Here, using a facial method of sequentially oxidizing Bi₂Se₃ at optimal O content, a series of bismuth oxyselenide semiconductors (Bi₃O_2.5Se₂, Bi₂O₂Se, Bi₂SeO₅) with appealing electronic applications are successfully synthesized. The crystal and band structures of a superlattice-free Bi₃O_2.5Se₂ phase are resolved by 3D electron diffraction and density functional theory calculations, showing a unique non-neutral layered structure, moderate band gap, and small effective mass. More importantly, the concept of Bi₂Se₃ + O₂ can be extended to synthesize the superlattice-free Bi₃O_2.5Se₂ ultrathin films by chemical vapor deposition, whose room-temperature mobility can be as high as ≈150 cm² V⁻¹ s⁻¹ based on Hall measurements. The ultrathin Bi₃O_2.5Se₂ photodetectors with a simple device configuration simultaneously own ultrafast response time (≈31 µs), ultrahigh responsivity (≈8 × 10⁴ A/W), and large detectivity (≈8 × 10¹³ Jones). This work not only introduces a facile way to regulate the phase in the bismuth oxyselenide family, but also provides an alternative candidate for ultrafast and ultrasensitive photodetectors.