p‐Type Dye‐Sensitized Solar Cells with a CdSeS Quantum‐Dot‐Sensitized NiO Photocathode for Outstanding Short‐Circuit Current

CdSeS quantum dots (QDs) are firstly introduced into a NiO photocathode for photocathodic dye‐sensitized solar cells (p‐DSCs). The optimized sample exhibits a short‐circuit density (14.68 mA cm^?2) and power conversion efficiency (1.02%) that are almost one order of magnitude higher than the reported value of p‐QDSCs. Steady‐state photoluminescence and time‐resolved photoluminescence measurements indicate that the photoexcited holes can be almost completely injected from CdSeS QDs into the valence band of NiO. At the same time, it can be observed from electrochemical impedance spectra measurements.     

Amplification of Solar Energy Conversion in Quantum‐Confined CdSe‐Sensitized TiO2 Photonic Crystals by Trapping Light

Photonic effects amplifying solar energy conversion are reported in titania inverse opals sensitized with quantum‐confined CdSe films. TiO₂ inverse opals (i‐TiO₂‐o) and unstructured nanocrystalline TiO₂ (nc‐TiO₂) films are sensitized with CdSe deposited via successive ionic layer adsorption and reaction (SILAR) by generating Se^2? in situ under inert atmosphere, and the film absorbance is tuned by the number of SILAR cycles. Photonic effects are investigated while varying the i‐TiO₂‐o stop band position relative to CdSe films’ absorbance. i‐TiO₂‐o films with stop band at 700 and 560 nm are sensitized with CdSe having absorption edges at 600 and 650 nm thus tuning absorbance to the red and the blue of the stop band. Significant amplification in photon‐to‐current conversion efficiency is measured when CdSe films prepared via two cycles are adsorbed on i‐TiO₂‐o with a stop band at 700 nm, with a maximum average enhancement factor equal to 6.7 ± 1.6 at 640 nm, 60 nm to the blue of the stop band center, relative to nc‐TiO₂ sensitized with comparable CdSe amounts. The gain is observed over a wide frequency range to the blue of the stop band and is greatest when film absorbance was low. The photocurrent gain is not a result of differences in the rates of charge separation or charge transport, and occurs in the same frequency range where absorbance amplification is measured to the blue of the 700‐i‐TiO₂‐o stop band, and is thus attributed to slow light effects enhancing absorbance in the photonic crystal environment.     

Heralded Universal Quantum Gate and Entangler Assisted by Imperfect Double‐Sided Quantum‐Dot‐Microcavity Systems

Efficient ways are presented to accomplish photonic controlled‐phase‐flip gate and entangler with the assistance of imperfect double‐sided quantum‐dot‐microcavity systems, but without ancillary qubits. Compact quantum circuits for implementing entanglement swapping between photon pairs and electron pairs are then designed. Unity fidelities of the schemes can be achieved, and physical imperfections in the construction processes are detected by single‐photon detectors. Also, the efficiencies of the schemes can be further improved by repeating the operation processes when the undesired performances are detected. The evaluations show that the schemes are possible with current experiment parameters.     

Synthesis of Blue‐, Green‐, Yellow‐, and Red‐Emitting Graphene‐Quantum‐Dot‐Based Nanomaterials with Excitation‐Independent Emission

A one‐pot method is described for the preparation of graphene quantum dots/graphene oxide (GQDs/GO) hybrid composites with emission in the visible region, through heteroatom doping and hydroxyl‐radical‐induced decomposition of GO. The NH₄OH‐ and thiourea‐mediated dissociation of H₂O₂ produces hydroxyl radicals. Treatment of GO with hydroxyl radicals results in the production of small‐sized GO sheets and GQDs, which self‐assemble to form GQDs/GO through strong π–π interactions. For example, the reaction of GO with a mixture of NH₄OH and H₂O₂ for 40, 120, and 270 min generates yellow‐emitting GQDs/GO (Y‐GQDs/GO), green‐emitting GQDs/GO, and blue‐emitting GQDs, while red‐emitting GQDs/GO (R‐GQDs/GO) are prepared by incubating GO with a mixture of thiourea and H₂O₂. From the analysis of these four GQD‐based nanomaterials by transmission electron microscopy, atomic force microscopy, and fluorescence lifetime spectroscopy, it is found that this tunable fluorescence wavelength results from the differences in particle size. All four GQD‐based nanomaterials exhibit moderate quantum yields (1–10%), nanosecond fluorescence lifetimes, and excitation‐independent emissions. Except for R‐GQDs/GO, the other three GQD‐based nanomaterials are stable in a high‐concentration salt solution (e.g., 1.6 m NaCl) and under high‐power irradiation, enabling the sensitive (high‐temperature resolution and large activation energy) and reversible detection of temperature change. It is further demonstrated that Y‐GQD/GO can be used to image HeLa cells.     

Ultrasensitive PbS‐Quantum‐Dot Photodetectors for Visible–Near‐Infrared Light Through Surface Atomic‐Ligand Exchange

A surface atomic‐ligand exchange method is applied the first time in the construction of photodetectors (PDs) based on PbS quantum dots (QDs) for ultrasensitivity. The device thus produces a high photosensitivity to visible and near‐infrared light with a photoresponsivity up to 7.5 × 10³ A W^?1 and a high stability in air. In particular, these PbS‐QD‐based PDs show the capability of following a pulse light with a frequency up to 100 kHz well at a relatively fast response time/recovery time of ≈4/40 μs, much faster than most previous QD‐based PDs. The short response time is attributed to modification for the surface of the PbS‐QDs by cetyltrimethylammonium bromide treatment, which effectively improves the contact between the QDs and the Au electrodes, leading to extracting a high carrier mobility (≈0.142 cm² V^?1 s^?1). These findings show the great potential of PbS‐QDs as high‐speed nano‐photodetectors, and, more importantly, demonstrate the importance of the surface atomic‐ligand exchange method in the construction of QD‐based devices.     

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

Si nanowires (Si NWs) structures with good antireflection and enhanced optical‐absorption properties are used to fabricate Si quantum dots/Si NWs heterojunction solar cells. The Si NWs prepared by the metal‐assisted chemical‐etching technique exhibit a very low reflection in a wide spectral range (300–1200 nm). Correspondingly, the optical absorption reaches as high as 88.9% by weighting AM1.5G solar spectrum. Both the short current density and open current voltage are improved compared to the reference flat cell. However, the photovoltaic properties are degraded by varying the Si NWs with long etching time, possibly due to the increased etching‐induced surface states. The optimal Si NWs lead to the best cell with the power conversion efficiency of 11.3%.     

Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO2 Interface in Quantum Dot‐Sensitized Solar Cells

Quantum dot‐sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next‐generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO₂ acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. To understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO₂ substrate are simulated using a rigorous ab initio density functional method. This method capitalizes on localized orbital basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO₂ occurring via the strong bonding between the conduction bands of QDs and TiO₂ is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO₂ acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO₂ systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO₂ acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.     

太阳能电池陷光结构辐射特性研究

本文分析了不同微结构、电池厚度对太阳能电池光损失的影响,提出了一种新的电池陷光结构。运用时域有限差分法(FDTD)仿真了该类太阳能电池陷光结构中光传输过程,获得了不同波源入射下陷光结构电池的储能特性和光捕获特性,优化设计了最佳陷光结构并分析了其光捕获性能。     

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

Highly performance photodetector requires a wide range of responses of the incident photons and converts them to electrical signals efficiently. Here, a photodetector based on formamidinium lead halide perovskite quantum dots (e.g., FAPbBr₃ QDs)–graphene hybrid, aiming to take the both advantages of the two constituents. The FAPbBr₃ QD–graphene layer not only benefits from the high mobility and wide spectral absorption of the graphene material but also from the long charge carrier lifetime and low dark carrier concentration of the FAPbBr₃ QDs. The photodetector based on FAPbBr₃ QD–graphene hybrid exhibits a broad spectral photoresponse ranging from 405 to 980 nm. A photoresponsivity of 1.15 × 10⁵AW⁻¹ and an external quantum efficiency as high as 3.42 × 10⁷% are obtained under an illumination power of 3 µW at 520 nm wavelength. In detail, a high responsivity is achieved in 405–538 nm, while a relatively low but fast response is observed in 538–980 nm. The photoelectric conversion mechanism of this hybrid photodetector is investigated in the view of built‐in electric field from the QD–graphene contact which improves the photoconductive gain.     

State‐of‐the‐Art and Trends in Synthesis,Properties, and Application of Quantum Dots‐Based Nanomaterials

Quantum dots (QDs) with a nanoscale size range have attracted significant attention in various areas of nanotechnology due to their unique properties. Different strategies for the synthesis of QD nanoparticles are reported in which various factors, such as size, impurities, shape, and crystallinity, affect the QDs fundamental properties. Consequently, to obtain QDs with appropriate physical properties, it is required to select a synthesis method which allows enough control over the surface chemistry of QDs through fine‐tuning of the synthesis parameters. Moreover, QDs nanocrystals are recently used in multidisciplinary research integrated with biological interfaces. The state‐of‐the‐art methods for synthesizing QDs and bioconjugation strategies to provide insight into various applications of these nanomaterials are discussed herein.     

PbS colloidal quantum dot/ZnO‐based bulk‐heterojunction solar cells with high stability under continuous light soaking

PbS colloidal quantum dot (CQD)‐based depleted bulk‐heterojunction solar cells were constructed, using the 1.2 μm thick nanowire array infiltrated with PbS QDs bearing Br ligands. The long‐term stability tests were performed on the solar cells without encapsulation in air under continuous light soaking using a Xe lamp with an AM1.5G filter (100 mW cm^?2). Time course of solar cell performances during the tests showed two time periods with distinct behavior, that is, the initial transient time period and the relatively stable region following it. The power conversion efficiency was found to keep approximately 90% of the initial value at the end of the 3000 h light soaking test. The stability tests suggest that the PbS surface modification or passivation reactions play an important role in achieving such a high stability, and demonstrate that PbS CQD/ZnO nanowire array‐based depleted bulk‐heterojunction solar cells are highly stable. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

A high efficiency 3D photovoltaic microwire with carbon nanotubes (CNT)‐quantum dot (QD) hybrid interface

An innovative hybrid QD sensitized photovoltaic carbon nanotubes microyarn has been developed using thermally‐stable and highly conductive carbon nanotubes yarns (CNYs). These CNYs are highly inter‐aligned, ultrastrong and flexible with excellent electrical conductivity, mechanical integrity and catalytic properties. The CNYs are coated with a QD‐incorporated TiO₂ microfilm and intertwined with a second set of CNYs as a counter electrode (CE). The maximum photon to current conversion efficiency (η_AM1.5) achieved with prolonged‐time stability was 5.93%. These cells are capable of efficiently harvesting incident photons regardless of direction and generating photocurrents with high efficiency and operational stability.

     

Manufacturing of Volumetric Glass–Based Composites with Single‐ and Double‐QD Doping

Quantum dot (QD)‐based light‐emitting materials are gaining increased attention because of their easily tunable optical properties desired for various applications in biology, optoelectronics, and photonics. However, few methods can be used to manufacture volumetric materials doped with more than one type of QD other than QD‐polymer hybrids, and they often require complicated preparation processes and are prone to luminescence quenching by QD aggregation and separation from the matrix. Here, simultaneous doping of a volumetric glass‐based nanocomposite with two types of QDs is demonstrated for the first time in a single‐step process using the nanoparticle direct doping method. Glass rods doped with CdTe, CdSe/ZnS, or co‐doped with both QDs, are obtained. Photoluminescence and lifetime experiments confirm temperature‐dependent double emission with maxima at 596 and 720 nm with mean lifetimes up to 16 ns, as well as radiative energy transfer from the short wavelength–emitting QDs to the long wavelength–emitting QDs. This approach may enable the simple and cost‐efficient manufacturing of bulk materials that produce multicolor luminescence with cascade excitation pumping. Applications that could benefit from this include broadband optical fiber amplifiers, backlight systems in LCD screens, high‐power LEDs, or down‐converting solar concentrators used to increase the efficiency of solar panels.     

Evidence of two‐photon absorption in strain‐free quantum dot GaAs/AlGaAs solar cells

We report the fabrication procedure and the characterization of an Al_0.3Ga_0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.

     

Increased open‐circuit voltage of ZnO nanowire/PbS quantum dot bulk heterojunction solar cells with solution‐deposited Mg(OH)2 interlayer

An ultrathin Mg(OH)₂ layer was solution‐deposited onto the ZnO nanowires to solve the problem of interfacial charge recombination, caused by the increase of interfacial area in bulk heterojunction (BHJ) PbS colloidal quantum dot solar cells (CQDSCs). This Mg(OH)₂ interlayer efficiently passivated the surface defects of ZnO nanowires and provided tunnel barrier at ZnO/PbS interface. As a result, the charge recombination at ZnO/PbS interface was largely suppressed, proved by the significantly elongated electron lifetime and the increased open‐circuit voltage of the Mg(OH)₂‐involved BHJ CQDSCs. Careful thickness optimization of Mg(OH)₂ interlayer finally brought a ～33% increase in V_oc and ～25% improvement in power conversion efficiency.