High-quality ultralong Sb2Se3 and Sb2S3 nanoribbons on a large scale via a simple chemical route

Large-scale ultralong single-crystalline Sb2Se3 and Sb2S3 nanoribbons were prepared respectively by reacting SbCl3 with selenium and sulfur powders in glycol solution. Both Sb2Se3 and Sb2S3 nanoribbons are usually hundreds of microns in length, and the structures of the nanoribbons are determined to be of the orthorhombic phases. The Sb2Se3 nanoribbons are typically 100-300 nm in width and 20-60 nm in thickness and grow along the [12] direction. Sb2S3 nanoribbons are wider than Sb2Se3 nanoribbons; Sb2S3 nanoribbons are about 200-500 nm in width and grow along the [001] direction. The growth mechanism of the nanoribbons is investigated based on high-resolution transmission electron microscopy (HRTEM) observations. Optical absorption experiment reveals that Sb2Se3 and Sb2S3 nanoribbons are two semiconductors with bandwidth Eg approximately 1.15 eV and Eg approximately 1.56 eV, respectively.     

Systematic investigation of the formation of 1D alpha-Si(3)N(4) nanostructures by using a thermal-decomposition/nitridation process

This article describes a simple thermal-decomposition/nitridation method for the large-scale synthesis of 1D alpha-Si(3)N(4) nanostructures, such as millimeter-scale microribbons, nanosaws, nanoribbons, and nanowires. These nanostructures are systematically investigated by checking the product deposited at different areas by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. Studies show that all these nanostructures have a single-crystalline nature and predominantely grow along the [011] direction. These 1D nanostructures are formed by thermal decomposition, followed by the nitridation of SiO.     

表面活性剂控制的硒纳米线的室温生长

以表面活性剂十二烷基硫酸钠(SDS)为形貌导向剂,利用Na₂Se在室温碱性水溶液中的自发氧化,成功制备了Se纳米线。用TEM、SEM、EDX、XRD、HRTEM、SEAD等手段表征了Se纳米线的组成和结构。结果表明,合成的Se纳米线是沿六方相Se的[001]轴方向生长,具有良好的晶型结构。使用TEM对不同时间Se纳米结构的生长过程的形貌进行了跟踪,探讨了Se纳米线的形成机理,发现其形成与生长过程符合“solid-solution-solid”机理。同时,选择了具有特异官能团(如-OH,-COOH,-CONH₂)的3种表面活性剂,研究它们在纳米硒的取向性生长中的导向作用,只有SDS能引导合成出高质量的Se纳米线。     

Controlled growth of semiconducting oxides hierarchical nanostructures

Semiconducting ZnO hierarchical nanostructure, where ZnO nanonails were grown on ZnO nanowires, has been fabricated under control experiment with a mixture of ZnO nanopowders and Sn metal powders. Sn nanoparticles are located at or close to the tips of the nanowires and the growth branches, serving as the catalyst for the vapor-liquid-solid growth mechanism. The morphology and microstructure of ZnO nanowire and nanonail were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The long and straight ZnO nanowires grow along [0001] direction. ZnO nanonails are aligned radially with respect to the surface the ZnO nanowire. The long axis direction of nanonails forms an angle of ∼30° to the [0001] direction.     

Development of one-dimensional nanostructures through the crystallization of amorphous colloids

In this paper we have demonstrated that the crystallization method of amorphous colloids is convenient and feasible in the large-scale production of one-dimensional (1D) nanostructures. For the crystals with highly anisotropic structures, such as orthorhombic, trigonal, and hexagonal crystals, the crystallization generally tends to occur along the (001) axis. The preparation of orthorhombic bismuth sulfide (Bi2S3) nanorods and trigonal selenium ( t-Se) nanowires by the crystallization route was used as typical examples to illustrate the process and mechanism of crystallization. The as-prepared products were characterized with transmission electron microscopy, field-emission scanning electron microscopy, X-ray diffraction, and selected area electron diffraction. Additionally, the detailed crystal growth processes involved in the crystallization of amorphous Bi2S3 colloid were investigated by studying the morphology and structure of intermediates. It demonstrates that the growth of the nanorods is through two key steps: (1) the formation of multiple activated sites on the surface of spherical Bi2S3 colloid and (2) the subsequent preferential growth along these sites.     

A multistep attachment process: Transformation of titanate nanotubes into nanoribbons

The mechanism of the conversion of titanate nanotubes into nanoribbons is of considerable interest.The details of the transformation processes involved when nanoribbons are produced from a P25 TiO 2 powder precursor by alkaline hydrothermal treatment have been investigated systematically by transmission electron microscopy.A multistep attachment model is proposed for the growth at the early stage of coarsening.The treatment duration has a strong effect on the change in product morphology from hollow nanotubes into nanoribbons,since the nanotubes cannot retain their morphology in the strong alkaline solution for extended periods of time.Most of the nanotubes were etched and dissolved,providing the nutrients for subsequent nanoribbon growth.Some stable nanotubes grew spirally internally to form nanowires or became connected together to form rafts which acted as the grains for nanoribbon growth.With increasing hydrothermal time,a large number of nanotubes and other fragments became attached to the grains which began to grow larger and eventually formed the nanoribbons,in a process in which the stepped faces and kinked faces became fused and were eliminated while the flat faces were retained in the nanoribbon morphology.     

Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures

In-doped ZnO (IZO) nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the IZO nanowires have been extensively investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The products in general contain several kinds of nanowires. In this work, a remarkable type of IZO zigzag nanowire with a periodical twinning structure has been investigated by transmission electron microscopy (TEM). HRTEM observation reveals that this type of IZO nanowire has an uncommonly observed zinc blend crystal structure. These nanowires, with a diameter about 100 nm, grow along the [111] direction with a well-defined twinning relationship and a well-coherent lattice across the boundary. In addition, an IZO nanodendrite structure was also observed in our work. A growth model based on the vapor-liquid-solid mechanism is proposed for interpreting the growth of zigzag nanowires in our work. Due to the heavy doping of In, the emission peak in photoluminescence spectra has red-shifted as well as broadened seriously.     

Metal phthalocyanine nanoribbons and nanowires

Nanoribbons and nanowires of different metal phthalocyanines (copper, nickel, iron, cobalt, and zinc), as well as copper hexadecafluorophthalocyanine (F(16)CuPc), have been grown by organic vapor-phase deposition. Their properties, as a function of substrate type, source-to-substrate distance, and substrate temperature, were studied by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and absorption measurements. The size and morphology of the nanostructures were found to be mainly determined by the substrate temperature. The crystal structure was dependent on the substrate temperature as well. At substrate temperatures below 200 degrees C, in addition to straight nanoribbons, twisted nanoribbons were found for all investigated materials except F(16)CuPc, which formed helical nanoribbons upon exposure to an electron beam. The formation of different nanostructures (nanoribbons, twisted nanoribbons, and helical nanoribbons) is discussed.     

A simple hydrothermal route to large-scale synthesis of uniform silver nanowires

This paper describes the preparation of uniform silver nanowires by reducing freshly prepared silver chloride with glucose at 180 degrees C for 18 hours in the absence of any surfactants or polymers. Scanning electron microscopy studies indicated that the silver nanowires are about 100 nm in diameter and up to 500 microm in length. High-resolution transmission electron microscopy analyses showed that the silver nanowires grow perpendicularly to the Ag(200) plane. The silver nanowires are believed to grow through a solid-solution-solid process. Some influential factors on the growth of silver nanowires are also discussed.     

化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物,利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线.为了解产物的结构、形貌、组分、微结构以及声子振动模式,对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析.分析显示合成的纳米线为六方铅锌矿结构,生长方向沿着[210]方向,长度均为10μm,直径在80-100 nm之间,x的值约为0.2.拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.     

化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物, 利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线. 为了解产物的结构、形貌、组分、微结构以及声子振动模式, 对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析. 分析显示合成的纳米线为六方铅锌矿结构, 生长方向沿着[210]方向, 长度均为10 μm, 直径在80-100 nm之间, x的值约为0.2. 拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.     

A Simple Hydrothermal Route to Large‐Scale Synthesis of Uniform Silver Nanowires

This paper describes the preparation of uniform silver nanowires by reducing freshly prepared silver chloride with glucose at 180 °C for 18 hours in the absence of any surfactants or polymers. Scanning electron microscopy studies indicated that the silver nanowires are about 100 nm in diameter and up to 500 μm in length. High‐resolution transmission electron microscopy analyses showed that the silver nanowires grow perpendicularly to the Ag(200) plane. The silver nanowires are believed to grow through a solid–solution–solid process. Some influential factors on the growth of silver nanowires are also discussed.     

化学气相沉积法制备Sn2S3一维纳米结构阵列

运用化学气相沉积法(CVD), 直接以Sn和S为原料分区加热蒸发, 通过控制温度分布、气压、载气流量和金属铅纳米颗粒分布等宏观实验条件, 成功制备大面积Sn₂S₃一维纳米结构阵列. 扫描电子显微镜(SEM)图片显示: Sn₂S₃一维纳米结构的横向尺度在100 nm左右, 长约几个微米. X射线衍射（XRD）谱显示: 所制备样品的晶体结构属于正交晶系, 沿[002]方向生长. 紫外-可见漫反射谱表明Sn₂S₃一维纳米结构是带隙为2.0 eV的直接带隙半导体. 讨论了温度分布和金属铅纳米颗粒对Sn₂S₃一维纳米结构生长的影响, 并指出其生长可能遵循气-固(V-S)生长机理.     

Characterization and field emission properties of ZnMgO nanowires fabricated by thermal evaporation process

In this paper, we investigate the roles of gold catalyst using modified thermal evaporation set-up in the growth process of ZnMgO nanowires. ZnMgO nanowires are fabricated on silicon substrates using different thickness of gold catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursors, based on Fick’s first law, is used to grow the ZnMgO nanowires. Field emission scanning electron microscopy images show that the ZnMgO nanowires are tapered. The optical properties of the ZnMgO nanowires are characterized by room temperature photoluminescence (PL) measurements. The PL studies demonstrate that the ZnMgO nanowires grown using this method have good crystallinity with excellent optical properties and have a larger band-gap in comparison to the pure ZnO nanowires. Field emission characterization shows that the turn-on field for the nanowires grown on the thinner gold film is lower than those grown on the thicker gold film.     

Size-dependent orientation growth of large-area ordered Ni nanowire arrays

Large-area ordered Ni nanowire arrays with different diameters have been fabricated by the direct current electrodeposition into the holes of porous anodic alumina membrane. The crystal structure and micrograph of nanowire arrays are characterized by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The results indicate that the growth orientation of Ni nanowires turns from [110] to [111] direction with increasing diameters of nanowires. The mechanism of the growth was discussed in terms of interface energy minimum principle. The size-dependent orientation of Ni nanowire arrays has the important significance for the design and control of nanostructures.     

Controlled synthesis and photoluminescence properties of ZnS nanowires and nanoribbons

Rapid synthesis of wurtzite ZnS nanowires and nanoribbons has been achieved by a simple thermal evaporation of ZnS powder onto Si substrate in the presence of Au catalyst. A vapor-liquid-solid process is proposed for the formation of the ZnS nanostructures. The flow rate of the inert carrier Ar gas along with the temperature play an important role in defining the morphology of the ZnS nanostructures. The morphological change of the ZnS nanostructures and their growth sequence were studied through scanning electron microscopy. Room-temperature photoluminescence measurements showed intense blue emission at approximately 398 nm from both the nanowires and the nanoribbons.     

Growth and luminescence of ternary semiconductor ZnCdSe nanowires by metalorganic chemical vapor deposition

ZnCdSe alloy nanowires were successfully grown on the GaAs (100) substrate by metalorganic chemical vapor deposition using Au as a catalyst. The nanowires display two distinct types of morphology. The majority of them are straight, uniform in diameter, and have a smooth surface. However, a significant portion of them contain one or two constrictions along their length. The alloy is found to be rich in Zn; its composition, as determined from X-ray diffraction and energy-dispersive X-ray microanalysis, is close to Zn(0.9)Cd(0.1)Se. The peak energy of its room temperature near-band-edge photoluminescence is also consistent with this composition. X-ray diffraction pattern and transmission electron microscopy find both types of nanowires to be single crystalline, have the metastable wurtzite structure, and a growth direction along 100. The presence of an Au-Cd-Zn alloy particle at the tip of the nanowires supports vapor-liquid-solid as the growth mechanism. The appearance of constrictions in some of the nanowires is found to be linked to the existence of structural defects, possibly stacking faults, during growth.     

直流电弧自催化合成β-SiC纳米线

采用C,Si和SiO₂为反应原料,利用直流电弧法制备出长直的β-SiC纳米线。纳米线的直径为100～200 nm,长度为10～20 μm,并且沿着<111>方向生长。通过X射线衍射(XRD)、扫描电子显微术(SEM)、透射电子显微术(TEM)、拉曼光谱等手段,对β-SiC纳米线进行表征。探讨了β-SiC纳米线自催化气-液-固(VLS)生长机制。     

Phase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method

The fundamentals of phase separations of single-crystal III-V nitride nanowires grown by self-catalytic chemical vapor deposition method have been studied. Experimental tools, such as high resolution transmission electron microscopy and scanning electron microscopy, have been used to characterize the nanowires. The study indicates that nanowires with diameters exceeding about 100 nm undergo phase transitions and/or crystal structure deterioration. The study highlights a relationship between the crystal structure and the kinetics of growth of nanowires.     

Ultra long SiC nanowires with fluctuating diameters synthesized in a polymer pyrolysis CVD route

Large areas of millimeters long β-SiC nanowires with fluctuating diameters were synthesized in a polymer pyrolysis CVD (PPCVD) route. Polycarbosilane was used as the raw material. The morphology and structure of the nanowires were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results showed that the nanowires had non-periodically fluctuating diameters in the range of 100–250 nm along the axial direction, and were composed of well crystalline β-SiC along the 〈111〉 direction. The vapor–solid (VS) mechanism was employed to interpret the nanowires growth procedure, and the diameter fluctuation was resulted from the varying concentration of the local silane fragments.