Strong Enhancement of Electron–Ion Recombination Owing to Free–Bound and Bound–Bound Resonance Transitions

The effect of free–bound and bound–bound resonance nonadiabatic transitions of an electron on electron–ion recombination rates in the plasma of a Ne/Xe and Ar/Xe inert gas mixture has been studied. A kinetic model of recombination has been proposed including energy relaxation in collisions with electrons, resonant electron capture to Rydberg states through three-body collisions of Xe⁺ ions with Ne or Ar atoms and dissociative recombination of NeXe⁺ or ArXe⁺ ions, and n → n' resonance transitions. It has been shown that effective resonance processes occurring in quasimolecular systems sharply increase both the recombination coefficient and the effect of collisions with neutral particles even at quite high degrees of ionization of the plasma.     

“Bottleneck” calculation of ion-electron recombination coefficients for lithium-like ions

Collisional-radiative recombination coefficients, including pure radiative and three-body recombination contributions, are computed for C(IV), O(VI), Ne(VIII), Si(XII), and Ar(XVI) by the “bottleneck” method of Byron et al. A convenient expression is developed for electron collisional excitation of ions and is used in the calculation.     

Number of electrons active in slow collisions of and with

Resonant excitation or resonant electron scattering is a two step process in which Auger rates are involved in both steps. First an electron is captured into a bound state and a bound electron is excited (inverse Auger effect). Then an Auger transition leads to the emission of the electron from the ion. The corresponding cross-sections are very sensitive to the Auger rates and allow a detailed study of the Breit interaction which is a current-current contribution to the static electron-electron interaction. The contribution of the Breit interaction to the cross-section of resonant excitation on hydrogen-like uranium ions is discussed and shown that it is roughly twice as large as in the case of dielectronic recombination. Received 4 August 1999 and Received in final form 29 September 1999     

Complex structure of resonant coherent excitation peaks for heavy relativistic hydrogen-like ions under planar channeling

The computer model for the resonant coherent excitation of heavy relativistic ions under planar channeling in crystals taking into account the fine structure of the energy levels of the orbital electron and the ion ionization from both the ground and first excited state is presented. The model has been used to explain the experiments carried out under planar channeling of 390 MeV/n ¹⁷⁺Ar ions. Reasonably good agreement for the calculated and experimental data has been obtained.     

Laser spectroscopy on forbidden transitions in trapped highly charged Ar(13+) ions

We demonstrate resonant fluorescence laser spectroscopy in highly charged ions (HCI) stored in an electron beam ion trap by investigating the dipole-forbidden 1s(2)2s(2)2p (2)P(3/2)-(2)P(1/2) transition in boronlike Ar(13+) ions. Forced evaporative cooling yielded a high resolving power, resulting in an accurate wavelength determination to λ=441.255?68(26) nm. By applying stronger cooling and two-photon excitation, new optical frequency standards based upon ultrastable transitions in such HCI could be realized in the future, e.g., for the search of time variations of the fine-structure constant.     

极板电压与间距对大气压射频氩等离子体放电参数的影响

基于1维流体力学模型,对大气压射频裸露金属电极氩气放电过程进行了研究。模型中考虑了氩等离子体放电过程中主要发生的激发和电离等7个反应过程,对等离子体反应产生的主要粒子,包括电子、氩原子离子Ar+、氩分子离子Ar2+和氩激发态Ar*等,建立连续性方程、动量方程和电流平衡方程。分析了极板电压、极板间距对上述粒子数密度分布的影响。给出了电子,Ar+,Ar*和Ar2+密度随极板电压及间距变化的时空演化过程。得出极板电压或极板间距的改变会使放电空间的电场发生改变,对应一定的极板间距,极板电压有一个最佳值,极板电压和间距的变化会使对应的极板间有一个最佳电场值,而对应最佳电场有一个等离子体气体间最佳反应系数,从而使放电空间粒子数密度发生改变。     

Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex

The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA₂(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m² at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.     

毛细管放电条件下类氖序列原子参量计算与分析

利用多组态求解相对论性的Hartree-Fock-Roothan方程(HFR)方法计算了类氖离子(Z=13～27)2s^22p^5—2s^22p^53s能级之间跃迁的原子参量,包括类氖氩激光系统的能级,振子强度,自发辐射衰变速率,能级寿命,电子碰撞激发截面及电子碰撞激发速率系数等。以类氖氩离子为例,分析了等离子体内46．9nm激光跃迁的粒子数反转的形成及谱线放大过程,讨论了其它几条谱线产生增益的可能性,分析了激光线振子强度随核电荷数的变化规律。根据获得的原子参量,计算了利用毛细管放电产生类氖氩和类氖氪x射线激光的放电参量,其中类氖氩毛细管放电的初始压强的范围为30~90Pa,放电电流峰值为10～50kA。理论计算结果为类氖氩x光激光实验分析,深入研究等离子体反转动力学,激光增益的估算及理论方案设计等提供了基本数据。     

高离化态Cu18+离子的双电子复合及共振转移激发过程的理论研究

在准相对论理论框架下计算了Cu¹⁸⁺离子的双电子复合截面，分析了组态相互作用对截面的影响.基于这些数据，在冲量近似下，通过对靶原子中电子动量分布的卷积，进一步得到了Cu¹⁸⁺与H₂碰撞过程中的共振转移激发截面，并与已有的实验结果作了比较，符合得很好.A 关键词： 双电子复合 共振转移激发     

Three-dimensional resonant coherent excitation of nonchanneling ions in a crystal

We have observed resonant coherent excitation (RCE) of H-like Ar(17+) ions traveling through a 1 microm-thick Si crystal at an energy of 391 MeV/u in the nonchanneling condition. A three-dimensional periodic array of atomic planes induces RCE of the nonchanneling ions. The high energy heavy ions together with the thin crystal allow us to observe this new RCE through the measurements of the charge-state distribution of the emerging ions. The observed resonances are much narrower than those of planar-channeling ions due to the absence of the large Stark shift caused by the planar potential.     

Exploring relativistic many-body recoil effects in highly charged ions

The relativistic recoil effect has been the object of experimental investigations using highly charged ions at the Heidelberg electron beam ion trap. Its scaling with the nuclear charge Z boosts its contribution to a measurable level in the magnetic-dipole (M1) transitions of B- and Be-like Ar ions. The isotope shifts of 36Ar versus 40Ar have been detected with sub-ppm accuracy, and the recoil effect contribution was extracted from the 1s(2)2s(2)2p 2P(1/2) - 2P(3/2) transition in Ar13+ and the 1s(2)2s2p 3P1-3P2 transition in Ar14+. The experimental isotope shifts of 0.00123(6) nm (Ar13+) and 0.00120(10) nm (Ar14+) are in agreement with our present predictions of 0.00123(5) nm (Ar13+) and 0.00122(5) nm (Ar14+) based on the total relativistic recoil operator, confirming that a thorough understanding of correlated relativistic electron dynamics is necessary even in a region of intermediate nuclear charges.     

Angular distribution of photons in dielectronic recombination

We have calculated the angular distribution of photons emitted after dielectronic recombination of highly charged uranium ions and obtained differential cross sections for resonant transfer and excitation in collisions of U⁹⁰⁺ with C atoms using the impulse approximation. This revised version was published online in July 2006 with corrections to the Cover Date.     

KLn Dielectronic Recombination Process of B- Through He-like Cu Ions

The KLn dielectronic recombination processes of trapped highly charged B-like through He-like Cu ions are studied theoretically, and the theoretical results are used to analyse our previous experimental data at Heidelberg electron beam ion trap （EBIT）. The theoretical resonant positions agree with the experimental resonant positions to a precision of 0.4%, in comparison with the resonant positions of those highest peaks between theory and experiment. The experimental spectra are then fitted using a formula with the theoretical resonant energies and strengths, the result shows good overall agreement between theory and experiment over a wide electron energy range. The distribution of highly charged states is obtained from the fitting parameters.     

Dielectronic recombination rates for the Be sequence

The dielectronic recombination (DR) rate coefficients have been recalculated for the C, Ar, and Fe target ions of the Be-sequence with an improved estimate of the high Rydberg state contribution. The Δn = 0 excitation-capture mode is reexamined in an improved LS coupling scheme and the effect of configuration interaction in the target and in the final (stably, bound) states is considered. The contribution of the 1s (Δn_t ≠ 0) excitation mode is also estimated and found to be on the order of 5% of the total DR capture rate at high electron temperatures. This updates and supersedes our earlier results for this isoelectronic sequence.     

Population processes in high-pressure inert-gas-mixture lasers

Working-level-population processes are analyzed on the basis of detailed investigations of the amplitude-time structure of the laser and spontaneous emission following a pulsed electric discharge in the mixtures He + R (R = Ar, Kr, Xe), Ar + Xe. Account is taken in the analysis of excitation by electrons (direct and stepwise) and of population as a result of relaxation processes (collisions of second kind with electrons; radiative cascades, recombination processes; collisions with the atoms of the working and buffer gases; excitation transfer from helium molecules). It is concluded that under optimum efficiency conditions inversion is produced in the lasers considered as a result of direct electron collision with the working atoms (Ar, Kr, Xe), which are in the ground state.Translated from Lazernye Sistemy, pp. 15–34, 1982.     

From spin flip excitations to the spin susceptibility enhancement of a two-dimensional electron gas

The g-factor enhancement of the spin-polarized two-dimensional electron gas was measured directly over a wide range of spin polarizations, using spin flip resonant Raman scattering spectroscopy on two-dimensional electron gases embedded in Cd(1-x)Mn(x)Te semimagnetic quantum wells. At zero Raman transferred momentum, the single-particle spin flip excitation, energy Z*, coexists in the Raman spectrum with the spin flip wave of energy Z, the bare giant Zeeman splitting. We compare the measured g-factor enhancement with recent spin-susceptibility enhancement theories and deduce the spin-polarization dependence of the mass renormalization.     

Atom and Ion Temperatures in a Hollow Cathode Discharge

Abstract

The excitation temperatures of atoms and ions /Ar I, Ar II, V I, V II, Cr I, Cr II, Cu I, and Si I/ have been measured in the hollow cathode discharge. The Ar I high energy levels have been found to be overpopulated. The electron density has been estimated. The ionization-excitation mechanism has been discussed.     

Enhancement of electron–ion recombination rates at low energy range in the heavy ion storage ring CSRm

Recombination of Ar¹⁴⁺, Ar¹⁵⁺, Ca¹⁶⁺, and Ni¹⁹⁺ ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^3.0, reproducing the low-energy recombination enhancement effects found in other previous experiments.     

Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions

The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap （Shanghai-EBIT） facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10^-19, 4.33×10^-19, 3.59×10^-19, 2.05×10^-19 and 0.98×10^-19 cm^2 eV for He-like to C-like Kr ions, respectively.