脉冲偏压电弧离子镀CNx薄膜研究

用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CN_x薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp³键的含量,是CN_x薄膜的硬度和弹性模量获得大幅度调整的本质原因. 关键词： x薄膜')" href="#">CN_x薄膜 脉冲偏压 电弧离子镀 硬度     

脉冲偏压电弧离子镀CNx薄膜研究

用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CNx薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp3键的含量,是CNx薄膜的硬度和弹性模量获得大幅度凋整的本质原因.     

脉冲偏压电弧离子镀Cr-O薄膜结构及光学性能研究

采用脉冲偏压电弧离子镀技术在单晶硅基片及石英玻璃上制备了一系列均匀透明的Cr-O薄膜. 用场发射扫描电子显微镜、X射线衍射仪、X射线光电子谱、纳米压痕仪、紫外可见光分光光度计等方法对薄膜的表面形貌、膜厚、相结构、成分、元素的化学价态、硬度和光学性能等进行表征, 主要研究了偏压幅值对薄膜结构和性能的影响. 结果表明, 施加偏压可使薄膜的沉积质量明显提高, 其相结构由非晶态转变为晶体态, 并随着偏压幅值的增加, 由Cr₂O₃相向CrO相转变; 薄膜的硬度先增大后减小, 当偏压为-300 V时, 硬度达到最大值24.4 GPa; 薄膜具有良好的透光率, 最高可达72%; 当偏压为-200 V时, 薄膜的最大光学帯隙为1.88 eV.     

脉冲偏压电弧离子镀C-N-V薄膜的成分、结构与性能

用脉冲偏压电弧离子镀方法在硬质合金基体上制备了一系列不同成分的C-N-V薄膜.用X射线光电子能谱、激光Raman光谱、 X射线衍射(XRD)、透射电子显微镜(TEM)和纳米压痕等方法分别研究了薄膜的成分、结构与性能.Raman光谱,XRD和TEM结果表明,所制备的薄膜为在类金刚石(DLC)非晶基体上匹配有VN晶体的碳基复合薄膜.随V和N含量的增加,薄膜硬度与弹性模量先增加后下降,在N含量为204%,V含量为218%时薄膜硬度与弹性模量具有最大值,分别为368和5697 GPa,高于相同条件下制备的 关键词： C-N-V薄膜 类金刚石薄膜 纳米复合薄膜 电弧离子镀     

反应溅射法制备TiO2薄膜

报道了用反应溅射法制备TiO₂薄膜的实验研究.详细研究了氧分压、基底温度和退火温度对成膜结构的影响.制备出了具有金红石和锐钛矿晶体结构的TiO₂薄膜.分析了金红石和锐钛矿晶体的形成条件,并对薄膜的表面形貌进行了测量. 关键词： 反应溅射 2薄膜')" href="#">TiO₂薄膜     

离子注入掺杂锐钛矿TiO2薄膜的光学性能

在玻璃基体上,采用射频磁控溅射方法在不同的基体温度下制备了TiO2薄膜,然后在薄膜中注入注量分别为5×1016, 1×1017和5×1017/cm2的N离子以制备N掺杂的TiO2薄膜。X射线衍射结果表明：制备出的TiO2薄膜为锐钛矿型。X射线光电子能谱研究结果表明：注入的N离子与TiO2晶粒相互作用,形成了含氮的TiOxN2-x化合物,从而改变了TiO2薄膜的吸收边;随N离子注量增加,吸收边移动更明显;同时,由于氮离子注入产生的辐照缺陷使TiO2薄膜在紫外和可见光区的吸收也明显增强。     

溶胶-凝胶法制备高折射率TiO2薄膜

采用溶胶- 凝胶法制备了TiO2纳米晶溶胶,并以旋涂法（spin-coating）镀制了高折射率光学薄膜。借助光散射技术和透射电镜研究了溶胶的微结构。采用原子力显微镜、场发射扫描电镜、紫外-可见-近红外光谱仪、椭偏仪、漫反射吸收光谱及强激光辐照实验,对膜层的结构、光学性能及抗激光损伤性能进行了系统的表征。结果显示:纳米晶薄膜的折射率达到了1.9,而传统的溶胶-凝胶薄膜折射率只有1.6;同时纳米晶薄膜的抗激光损伤阈值与传统的溶胶-凝胶薄膜相差不大,在1 064 nm处分别为16.3 J/cm2(3 ns脉冲) 和16.6 J/cm2(3 ns脉冲);纳米晶溶胶薄膜可以在保持较高抗激光损伤阈值情况下,大幅度提高薄膜折射率。     

TiO2纳米线阵列干涉传感器

开发一种新型TiO₂纳米线阵列干涉传感器。首先,通过水热合成法在FTO导电玻璃表面制备了TiO₂纳米线阵列薄膜。然后,以此复合结构作为传感芯片,利用Kretschmann 棱镜耦合结构,构建了基于Kretschmann结构的波长调制型薄膜干涉传感器。最后,以氯化钠水溶液为待测液体介质研究了该传感器对环境介质折射率的灵敏性能。结果表明：该传感器对1.333 5~1.360 4范围内的折射率有很好的响应。TM模式下,在0~3%与3~15%浓度范围内,氯化钠浓度与该传感器的反射光强度分别呈现了良好的线性关系。TE模式下,在0~3%浓度范围内,氯化钠浓度与吸收强度存在良好的线性关系,而波长基本不变;而在3~15%浓度范围内,随着氯化钠浓度的增加,波长逐渐红移,氯化钠浓度与波长也具有良好的线性关系。     

水热法制备TiO2薄膜的研究

采用水热法在玻璃基片上制备了TiO2薄膜.利用x射线衍射(XRD)、x射线光电子能谱(XPS)、扫描电子显微镜(SEM)等分析测试手段对所制备的TiO2薄膜的相结构、表面化学组成及形貌等进行了分析和表征,研究了不同水热条件对所制备TiO2薄膜的光吸收特性的影响.结果表明,所制备的薄膜为锐钛矿型TiO2,均匀、致密、无可视缺陷,具有优异的可见光透过性和紫外吸收特性 关键词： 水热法 TiO2薄膜 比消光度     

ZnO·TiO2双层复合薄膜的制备及其光学性能的研究

采用溶胶-凝胶法(Sol-Gel),分别以乙酸锌(Zn(CH₃COO)₂H₂O)、钛酸酊酯(Ti(OC₄H₉)₄)为锌源和钛源,在玻璃衬底以及硅衬底上制备了不同浓度的、均匀的、结晶质量良好的单层ZnO、TiO₂薄膜及双层的ZnO·TiO₂复合薄膜。结果表明,所制备的单层本征ZnO、TiO₂薄膜分别沿(002)、(101)晶面生长,且当本征ZnO、TiO₂的浓度分别为0.45 mol/L、0.65 mol/L时,择优取向生长最明显。ZnO·TiO₂复合薄膜的(101)、(004)特征峰明显,且0.45 mol/L/0.55 mol/L的双层ZnO·TiO₂复合薄膜结晶质量最好;薄膜表面最为平整,粒子分布均匀,粘连现象最少;对紫外光的吸收最强,禁带宽度为3.39 eV。     

Ti-Cu-N hard nanocomposite films prepared by pulse biased arc ion plating

In this work, Ti-Cu-N hard nanocomposite films were deposited on high-speed-steel (HSS) substrates using a TiCu (88:12 at.%) single multi-component target by pulse biased arc ion plating. The influence of pulse bias voltages was examined with regard to elemental composition, structure, morphology and mechanical properties of the films. The Cu atomic content of Ti-Cu-N films was determined by Electron Probe Micro-Analyzer (EPMA). The structure and morphology were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Hardness and film/substrate adhesion were determined by nanoindenter and scratch test, respectively. The results showed that the content of Cu appeared to be in the range of 1.75-4.5 at.%, depending on pulse bias voltages. The films exhibit a preferred orientation TiN (1 1 1) texture when the substrate bias voltages were −100 V and −300 V, while the preferred orientation change to be a preferred orientation TiN (2 2 0) one when the substrate bias voltages increase to −600 V and −900 V. And no obvious sign of metal copper phase was observed. The SEM morphologies showed some macroparticles (MPs) on the surface of the films and the relative content of the MPs decreased significantly when the substrate bias voltages increased from −100 to −900 V. The maximum value (74 N) of the film/substrate adhesion of the films was obtained when the substrate bias voltage was −600 V with Cu content of 1.75 at.%. Hardness enhancement was observed, the value of the hardness increased firstly and reached a maximum value of 31.5 GPa, corresponding to Cu content of 1.75 at.%, and then it decreased when the substrate bias voltage changed from −100 to −900 V. The hardness enhancement was discussed related to the concept for the design of hard materials.     

High-temperature oxidation resistant (Cr, Al)N films synthesized using pulsed bias arc ion plating

(Cr, Al)N films were deposited by pulsed bias arc ion plating on HSS and 316L stainless steel substrates. With pulsed substrate bias ranging from −100 V to −500 V, the effect of pulsed bias on film composition, phase structure, deposition rate and mechanical properties was investigated by EDX, XRD, SEM, nanoindentation and scratch measurements. The high-temperature (up to 900 °C) oxidation resistance of the films was also evaluated. The results show that Al contents and deposition rates decrease with increasing pulsed bias and the ratio of (Cr + Al)/N is almost constant at 0.95. The as-deposited (Cr, Al)N films crystallize in the pseudo-binary (Cr, Al)N and Al phases. The film hardness increases with increasing bias and reaches the maximum 21.5 GPa at −500 V. The films deposited at −500 V exhibit a high adhesion force, about 70 N, and more interestingly good oxidation resistance when annealed in air at 900 °C for 10 h.     

Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating

Thin films of titanium nitride (TiN) were deposited on stainless steel substrates by a modified deposition technique, double-layered shielded arc ion plating with vicarious circular holes (DL-SAIP). The results show that the TiN film with the distance of 10 mm between the double-layered shield plates had the least droplets. The deposition rate of the films prepared with the new technique was more homogeneous than that of all the other shielded arc ion plating. The film/substrate adhesion and microhardness values of the TiN films were higher than 40 N and 18 GPa, respectively. Thus such TiN thin films can be expected in applications.     

Effect of pulsed bias on properties of ZrN/TiZrN films deposited by cathodic vacuum arc

ZrN/TiZrN multilayer are deposited by cathodic vacuum arc method with different substrate bias (from 0 to -800 V), using Ti and Zr plasma flows in residual N₂ atmosphere, combined with ion bombardment of sample surfaces. The effect of pulsed bias on structure and properties of films is investigated. Microstructure of the coating is analyzed by X-ray diffraction (XRD), and scanning electron microscopy (SEM). Meanwhile, the nanohardness, Young's modulus, and scratch tests are performed. The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases. Solid solutions are formed for component TiZrN films. The dominant preferred orientation of TiZrN films is (111) and (220). At pulsed bias of -200 V, the nanohardness and the adhesion strength of ZrN/TiZrN multilayer reach a maximum of 38 GPa, and 78 N, respectively. The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions.     

Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc

ZrN/TiZrN multilayers are deposited by using the cathodic vacuum arc method with different substrate bias(from 0 to 800 V),using Ti and Zr plasma flows in residual N 2 atmosphere,combined with ion bombardment of sample surfaces.The effect of pulsed bias on the structure and properties of films is investigated.Microstructure of the coating is analyzed by X-ray diffraction(XRD),and scanning electron microscopy(SEM).In addition,nanohardness,Young’s modulus,and scratch tests are performed.The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases.Solid solutions are formed for component TiZrN films.The dominant preferred orientation of TiZrN films is(111) and(220).At a pulsed bias of 200 V,the nanohardness and the adhesion strength of the ZrN/TiZrN multilayer reach a maximum of 38 GPa,and 78 N,respectively.The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions.     

Ti/TiN multilayer thin films deposited by pulse biased arc ion plating

In this work, the effect of modulation period (Λ) on Ti/TiN multilayer films deposited on high-speed-steel (HSS) substrates using pulse biased arc ion plating is reported. The crystallography structures and cross-sectional morphology of Ti/TiN multilayer films were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM), respectively. Their mechanical properties were determined via nanoindentation measurements, while the film/substrate adhesion via the scratch test. It was found that the highest hardness value reached 43 GPa for the modulation period of 54 nm, while the film/substrate adhesion also reached the highest value of 83 N. Furthermore, the hardness enhancement mechanism in the multilayer films is discussed.     

Influences of nitrogen flow rate on the structures and properties of Ti and N co-doped diamond-like carbon films deposited by arc ion plating

In this paper, Ti-C-N nanocomposite films are deposited under different nitrogen flow rates by pulsed bias arc ion plating using Ti and graphite targets in the Ar/N2 mixture gas. The surface morphologies, compositions, microstructures, and mechanical properties of the Ti-C-N films are investigated systematically by field emission scanning electron mi- croscopy （FE-SEM）, x-ray photoelectron spectroscopy （XPS）, grazing incident x-ray diffraction （GIXRD）, Raman spectra, and nano-indentation. The results show that the nanocrystalline Ti（C,N） phase precipitates in the film from GIXRD and XPS analysis, and Raman spectra prove the presence of diamond-like carbon, indicating the formation of nanocomposite film with microstructures comprising nanocrystalline Ti（C,N） phase embedded into a diamond-like matrix. The nitrogen flow rate has a significant effect on the composition, structure, and properties of the film. The nano-hardness and elastic modulus first increase and then decrease as nitrogen flow rate increases, reaching a maximum of 34.3 GPa and 383.2 GPa, at a nitrogen flow rate of 90 sccm, respectively.