Interactions and glass formation in the TlAs2Se4-Tl3As2Se3Te3 system

The TlAs₂Se₄-Tl₃As₂Se₃Te₃ system was studied using differential thermal analysis (DTA), powder X-ray diffraction, microstructure observation, and microhardness and density measurements. A phase diagram of the title system was constructed. This system is a quasi-binary join of the TlSe-As₂Se₃-As₂Te₃ quasi-ternary system. All alloys of the system under standard conditions are prepared in the glassy form. The system has a eutectic, which contains 50 mol % Tl₃As₂Se₃Te₃ and melts at 150°C. The TlAs₂Se₄-base solid solution in the system extends to 12 mol % Tl₃As₂Se₃Te₃, and Tl₃As₂Se₃Te₃-based solid solution extends to 20 mol % TlAs₂Se₄.     

Phase equilibria and glass formation in the As2S3-TlAs2S2Se2 section of the As2S3-As2Se3-TlS system

Alloys in the As₂S₃-TlAs₂S₂Se₂ section of the As₂S₃-As₂Se₃-TlS ternary system were studied and a phase diagram was constructed using physicochemical methods (differential thermal analysis, microstructural analysis, X-ray powder diffraction, also microhardness and density measurements). The diagram in the As₂S₃-TlAs₂S₂Se₂ section is a non-quasi-binary diagonal section of the As₂S₃-As₂Se₃-TlSe quasi-ternary system. It was found that all the alloys in the section under ordinary conditions are obtained in the vitreous state. At low As₂S₃ concentrations in the section, solid solutions form up to 2.5 mol %, and at low TlAs₂S₂Se₂ concentrations, their extent is 3 mol %.     

Character of interaction and glass formation in the TlAs<Subscript>2</Subscript>Se<Subscript>4</Subscript>-Tl<Subscript>3</Subscript>As<Subscript>2</Subscript>S<Subscript>3</Subscript>Se<Subscript>3</Subscript> system

The TlAs₂Se₄-Tl₃As₂S₃Se₃ system was investigated by physicochemical methods (DTA, X-ray powder diffraction, microstructural analysis), and its phase diagram was constructed. The TlAs₂Se₄-Tl₃As₂S₃Se₃ join is a quasi-binary internal section of the As-Tl-S-Se quaternary system. The solubility range of TlAs₂Se₄-based solid solutions is extended to 7 mol %, and the region of Tl₃As₂S₃Se₃-based solid solutions is extended to 15 mol %.     

Compounds in the system Cu2SeAs2Se3

The phase diagram Cu₂SeAs₂Se₃ was investigated by thermal and X-ray methods. Cu₂Se has a limited solubility for As₂Se₃ (5 mole% at 769 K). The stoichiometric compound Cu₃AsSe₃ exists between 696 and 769 K. Cu₄As₂Se₅, a phase at 66.6 mole% Cu₂Se, decomposes peritectically at 746 K. The narrow homogeneity range (4 mole% at 683 K) extends far into the ternary space. CuAsSe₂ also decomposes peritectically at 683 K. A degenerated eutectic between CuAsSe₂ and As₂Se₃ was found at 641 K. Single crystals of Cu₄As₂Se₅ were grown in a salt melt. A metastable modification of the high-temperature phase Cu₃AsSe₃ can be obtained by quenching. Cu₄As₂Se₅ (space group R3, lattice constants a = 1404.0(1) pm, c = 960.2(1) pm), Cu₆As₄Se₉, obtained by Cambi and Elli, and Cu₇As₆Se₁₃ of Takeuchi and Horiuchi are different versions of a sphalerite-type compound with a broad homogeneity range in the system CuAsSe. CuAsSe₂ is possibly monoclinic with lattice parameters of a = 946.5(1) pm, b = 1229.3(1) pm, c = 511.7(1) pm, and β = 98.546(4)°. The enthalpy of mixing of Cu₂Se and As₂Se₃ in the liquid state is endothermic.     

Phase equilibrium in the As2S3-TlSe system

The interaction between the components of the As₂S₃-TlSe system has been studied using diffeential thermal analysis, powder X-ray diffraction, microstructure examination, and microhardness and density measurements. Two new quaternary compounds, TlAs₂S₃Se and Tl₃As₂S₃Se₃, are formed in the system. Both compounds may be prepared in a glassy state. They melt congruently at 350 and 280°C, respectively. The section As₂S₃-TlSe is a stable diagonal of the ternary reciprocal system As,Tl ‖ S, Se. The As₂S₃-base solid solution extends to 1.5 mol % TlSe. The extent of the TlSe-base solution is 5.2 mol % As₂S₃. Under slow cooling, the glass field in the system extends to 85 mol % TlSe; when the system is quenched to liquid nitrogen, the extent of the glass field is 100 mol % TlSe.     

Large optical Kerr effect in bulk GeSe2–In2Se3–CsI chalcohalide glasses

Third-order nonlinear optical properties of GeSe₂–In₂Se₃–CsI chalcogenide bulk glasses are studied by Standard pico-second (ps) time-resolved optical Kerr effect (OKE) technique. The obtained χ⁽³⁾ and n₂ at 1064 nm of the glass 72.25GeSe₂–23.75In₂Se₃–5CsI are as large as 10.07 × 10⁻¹² esu and 6.5 × 10⁻¹⁸ m²/W, respectively, more than twice that of As₂S₃ glass. The relationship between glass compositions and the third-order nonlinear optical responses was analyzed by Raman spectra in terms of structural evolution. It is suggested that the tetrahedral units ([GeSe₄] and [InSe₄]) play an important role in the ultrafast third-order nonlinear optical responses of these chalcohalide glasses.     

Synthesis and characterization of quaternary chalcogenides InSn2Bi3Se8 and In0.2Sn6Bi1.8Se9

Quaternary chalcogenides InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ were synthesized on direct combination of their elements in stoichiometric ratios at T>800 °C under vacuum. Their structures were determined with X-ray diffraction of single crystals. InSn₂Bi₃Se₈ crystallizes in monoclinic space group C2/m (No. 12) with a=13.557(3) Å, b=4.1299(8) Å, c=15.252(3) Å, β=115.73(3)°, V=769.3(3) Å³, Z=2, and R₁/wR₂/GOF=0.0206/0.0497/1.092; In_0.2Sn₆Bi_1.8Se₉ crystallizes in orthorhombic space group Cmc2₁ (No. 36) with a=4.1810(8) Å, b=13.799(3) Å, c=31.953(6) Å, V=1843.4(6) Å³, Z=4, and R₁/wR₂/GOF=0.0966/0.2327/1.12. InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ are isostructural with CuBi₅S₈ and Bi₂Pb₆S₉ phases, respectively. The structures of InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ feature a three-dimensional framework containing slabs of NaCl-(311) type with varied thicknesses. Calculations of the electronic structure and measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps. Both compounds show n-type semiconducting properties with Seebeck coefficients −270 and −230 μV/K at 300 K for InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉, respectively.     

In-situ Synthesis of the Thinnest In2Se3/In2S3/In2Se3 Sandwich-Like Heterojunction for Photoelectrocatalytic Water Splitting

The efficient utilization of solar energy for photoelectrocatalytic (PEC) water splitting is a feasible solution for developing clean energy and alleviating environmental issues. However, as the core of PEC technology, the existing photoanode catalysts have disadvantages such as poor photoelectrocatalytic conversion efficiency, low conductivity of photogenerated carriers, and instability. Here, we report the ultrathin two-dimensional sandwich-like (SW) heterojunction of In₂Se₃/In₂S₃/In₂Se₃ (SW In₂S₃@In₂Se₃) for the first time for PEC water splitting. Our findings identify the efficient separation of electrons and holes by constructing SW In₂S₃@In₂Se₃ heterojunction. The in situ synthesis of ultrathin nanosheet arrays by using surface substitution of Se atom to epitaxially grow cell In₂Se₃ maximizes the contact area of heterogeneous interface and accelerates the transmission of charge carrier. Benefitting from the unique structure and composition characteristic, SW In₂S₃@In₂Se₃ displays excellent performance in PEC water splitting. The photocurrent density of SW In₂S₃@In₂Se₃ reaches 8.43 mA cm⁻² at 1.23 V_RHE. Compared with In₂S₃, the SW In₂S₃@In₂Se₃ photoanode has nearly 12 times higher PEC performance, which represents the best performance among the In₂S₃-based photoanode heterojunction reported so far. The evolution rate of O₂ reaches 78.8 μmol cm⁻² h⁻¹, and the photocurrent has no apparent variety within 24 h.     

Structural investigation of the Cu2Se-In2Se3-Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Structures of compounds in the Cu₂Se-In₂Se₃-Ga₂Se₃ system have been investigated through X-ray diffraction. Single crystal structure studies for the so-called stoichiometric compounds Cu(In,Ga)Se₂ (CIGSe) confirm that the chalcopyrite structure (space group I4¯2d) is very flexible and can adapt itself to the substitution of Ga for In. On the other hand a structure modification is evidenced in the Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ series when the copper vacancy ratio (z) increases; the chalcopyrite structure turns to a modified-stannite structure (I4¯2m) when z≥0.26. There is a continuous evolution of the structure from Cu_0.74(In_0.5Ga_0.5)_1.09Se₂ to Cu_0.25(In_0.5Ga_0.5)_1.25Se₂ ((i.e. Cu(In_0.5Ga_0.5)₅Se₈), including Cu_0.4(In_0.5Ga_0.5)_1.2Se₂ (i.e. Cu(In_0.5Ga_0.5)₃Se₅). From this single crystal structural investigation, it is definitively clear that no ordered vacancy compound exists in that series. X-ray photoemission spectroscopy study shows for the first time that the surface of powdered Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ compounds (z≠0) is more copper-poor than the bulk. The same result has often been observed on CIGSe thin films material for photovoltaic applications. In addition, optical band gaps of these non-stoichiometric compounds increase from 1.2 to 1.4 eV when z varies from 0 to 0.75.     

Heats of immersion of amorphous As2S3, As2S5 and As2Se3 in organic liquids

The heats of immersion of hydrophobic, amorphous arsenic chalcogenides have been measured in several organic liquids. For hexane, butanol, butylchloride and nitropropane, the heats of immersion with As₂S₃, As₂S₅ and As₂Se₃ showed linear dependences on the dipole moment of the wetting liquid molecule. From the results the average values of the electrostatic field strength were calculated to be 0.29 × 10⁵, 0.31 × 10⁵, and 0.57 × 10⁵ e.s.u. cm^?2. The heats of immersional wetting of As₂S₃ and As₂Se₃ in n-alkanols linearly increased with an increase of n, the number of carbon atoms in C_nH_2n+1OH. The contributions due to polarization of the liquid molecule by the electrostatic field of the solid surface, due to the dispersion force and due to the interaction between the dipole moment of the liquid with the electrostatic field of the solid were calculated by applying the additivity of intermolecular forces. The result showed that the dispersion force was the dominant contribution to the interaction in As chalcogenides-n-alkanol systems.     

Hydrothermal synthesis of [C6H16N2][In2Se3(Se2)]: A new one-dimensional indium selenide

A new organically templated indium selenide, [C₆H₁₆N₂][In₂Se₃(Se₂)], has been prepared hydrothermally from the reaction of indium, selenium and trans-1,4-diaminocyclohexane in water at 170 °C. This material was characterised by single-crystal and powder X-ray diffraction, thermogravimetric analysis, UV-vis diffuse reflectance spectroscopy, FT-IR and elemental analysis. The compound crystallises in the monoclinic space group C2/c (a=12.0221(16) Å, b=11.2498(15) Å, c=12.8470(17) Å, β=110.514(6)°). The crystal structure of [C₆H₁₆N₂][In₂Se₃(Se₂)] contains anionic chains of stoichiometry [In₂Se₃(Se₂)]²⁻, which are aligned parallel to the [1 0 1] direction, and separated by diprotonated trans-1,4-diaminocyclohexane cations. The [In₂Se₃(Se₂)]²⁻ chains, which consist of alternating four-membered [In₂Se₂] and five-membered [In₂Se₃] rings, contain perselenide (Se₂)²⁻ units. UV-vis diffuse reflectance spectroscopy indicates that [C₆H₁₆N₂][In₂Se₃(Se₂)] has a band gap of 2.23(1) eV.     

Phase relationships in the systems MSCr2S3In2S3 (M = Co,Cd, Hg)

The phase diagrams of the quaternary systems MSCr₂S₃In₂S₃, with M = Co, Cd, and Hg, were studied with the help of X-ray powder photographs of quenched samples, high-temperature X-ray diffraction patterns, DTA and TG measurements, and far-infrared spectra. Because indium sulfides do react with silica tubes, alumina crucibles must be used for annealing the samples. Complete series of mixed crystals are formed among the spinel-type compounds MCr₂S₄, MIn₂S₄ (M = Cd, Hg), and In₂S₃. HgIn₂S₄ is decomposed at temperatures above 300°C. In the sections CoCr₂S₄CoIn₂S₄ and CoCr₂S₄In₂S₃ relatively large miscibility gaps exist due to the change from normal to inverse spinel structure. But the interchangeability of both systems increases with increasing temperature, and at temperatures above 1000°C, complete series of solid solutions are formed, which can be quenched to ambient temperature. Superstructure ordering like that of ordered α-In₂S₃ has been found in the In-rich region of the MIn₂S₄In₂S₃ solid solutions. The unit cell dimensions of all stoichiometric and phase boundary compounds, e.g., Cd_1.15In_1.9S₄, including the chromium spinels MCr₂S₄ (M = Mn, Zn) and ZnCr₂Se₄, are given and discussed in terms of possible deviations from stoichiometry.     

Etude du diagramme ternaire CuInSe2ZnSeIn2Se3

The system CuInSe₂ZnSeIn₂Se₃ has been investigated. A large domain of thiogallate-type compounds was found with a number of cation vacancies less or equal to that of ZnIn₂Se₄ compound. A study with a least-squares method was performed on the experimental parameters a and c and relations with the compositions are given. The blende-structure model with cation vacancies was used for evaluation of the vacancy radius [r₁ = (0.97 ± 0.05) Å] in the thiogallate compounds.     

Zur Kenntnis des quaternären Systems Zn?In?S?Se Der Schnitt ZnIn2S4?Znln2Se4?In2S3?In2Se3

The Quaternary System ZnIn₂S₄? ZnIn₂Se₄? In₂Se₃? In₂S₃ The title system has been investigated on the indium rich side (ratio In/Zn ≥ 2) on samples quenched from 800°C to room temperature using x-ray methods. In this section 7 different phases could be identified the phase borders of which are given. ZnIn₂S₄-type and thiogallate type mixed crystals only show a small region of homogeneity while the monophase region of spinel type mixed crystals in the indiumsulfide rich part of the phase diagram has a larger extension. There is a new trigonal compound ZnIn₂S₂Se₂ (a_hex = 3.937, c_hex = 31.97 Å) with a large region of homogeneity. In the indiumselenide rich part there are two new phases: (i) Zn_0.4In₂Se_3.4 with unknown structure and (ii) a ternary phase of unknown structure in the system In₂S_3?xSe_x for 2.1 ≤ x ≤ 2.7.     

The structure Tl3SbS3, Tl3SbSe3, Tl3SbS3−xSex, and Tl3SbyAs1−ySe3

The space group symmetry and crystal structure of Tl₃SbS_3−xSe_x compounds in the composition range 0 < x < 3 have been determined by a combination of powder X-ray diffraction, electron diffraction, and high-resolution electron microscopy. The incongruently melting compound Tl₃SbSe₃ has been shown to crystallize in cubic space group P2₁3 with a = 9.435Å in a structure related to that of Langbeinite. The convergent beam electron diffraction pattern of Tl₃SbS₃ is in accord with the space group R3m determined by X-ray diffraction. The cubic Langbeinite-type structure is found for Tl₃SbS_3−xSe_x for 0.5 < x < 3 and for Tl₃Sb_yAs_1−ySe₃ for 0.077 < y < 1.0. A five-component compound Tl₃Sb_0.5As_0.5Se_1.5S_1.5 was also found to be cubic.     

Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures

Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide interest not only for the fundamental research,but also for the application of next generation electronic and optoelectronic devices.Herein,we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In₂Se₃/MoSe₂ heterostructures.Transmission electron microscopy characterization reveals clearly that the In₂Se₃ has well-aligned lattice orientation with the substrate of monolayer MoSe₂.Due to the interaction between the In₂Se₃ and MoSe₂ layers,the heterostructure shows the quenching and red-shift of photoluminescence.Moreover,the current rectification behavior and photovoltaic effect can be observed from the heterostructure,which is attributed to the unique band structure alignment of the heterostructure,and is further confirmed by Kevin probe force microscopy measurement.The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.     

Phase relations in the TlXTl2Se systems (X = Cl,Br, I) and the crystal structure of Tl5Se2I

Each of the quasibinary systems TlClTl₂Se, TlBrTl₂Se, and TlITl₂Se contains a region of solid solution up to 18 mole% Tl₂Se, which decomposes peritectically. The mixed crystals can be explained by a statistical substitution of Se by two I atoms on the fourfold sites of the Tl₂Se lattice. Compounds of the type Tl₅Se₂X were derived by complete substitution. Crystals of Tl₅Se₂I, suitable for a crystal structure determination, were grown by the Bridgman technique. Tl₅Se₂I is tetragonal, $\text{I4}\text{mcm}\text{; a = 866.3}\text{pm}\text{, c = 1346.3}\text{pm}\text{, Z = 4}$. The structure is an ordered variation of the In₅Bi₃ structure and isopuntal to the Cr₅B₃ type. The structure is formed basically by layers of Tl₂Se, in which strings of TlI are introduced. The compounds Tl₅Se₂Br (a = 861.1 pm, c = 1292.2 pm) and Tl₅Se₂Cl (a = 856.5 pm, c = 1273.3 pm) have probably very similar structures. A tendency for immiscibility in the TlXTl₂Se systems is shown by the existence of a miscibility gap in the system TlClTl₂Se and by the endothermic enthalpies of mixing in the system TlBrTl₂Se. In the TlITl₂Se system the compound Tl₆Se₄I system was encountered.     

Thermoanalysis of quasi-ternary As2(S,Se, Te)3 semiconductor glasses

In comparison with other chalcogenide glassy systems, less attention has been paid to the quasi-ternary (quaternary) system As₂(S, Se, Te)₃. In this paper, thermal methods were used to characterize ten different quaternary homogenous semiconductor glasses that were prepared by mixing the stoichiometric binary systems As₂S₃, As₂Se₃ and As₂Te₃. The ratios of the constituent binaries in the quasi-ternary glasses exerted a great influence on their thermal spectrum. The samples poor in As₂Te₃ showed neither the exothermic nor the endothermic peak due to crystallízation (T _c) and melting (T _m), respectively, but only the glass transition (T _g). Three transition temperatures,T _g, T_c andT _m, were detected for other compositions. On the other hand, a phase separation was observed in the samples rich in As₂Te₃. A cyclic scanning technique was used to investigate the thermally-induced phases during two consecutive heat ing-cooling cycles covering the temperature rangeT _g?T_m. The energy of decompositionE _d decreased on increase of the ratio As₂S₃/As₂Se₃ (at constant As₂Te₃), whereas it increased on increase of the ratio As₂Te₃/As₂Se₃ (at constant As₂Se₃ or As₂S₃).     

Magnetic susceptibility and torque measurements of FeV2S4, FeV2Se4 and FeTi2Se4

Magnetic susceptibility and torque measurements of FeV₂S₄, FeV₂Se₄ and FeTi₂Se₄ were made using the powder and the single crystal samples. The inverse susceptibility of FeV₂S₄, FeV₂Se₄ and FeTi₂Se₄ changed its slope at 850, 820 and 700 K, respectively, at which temperature the order-disorder transition of cation vacancies should seem to take place. Above these temperatures the paramagnetic moment obtained for these compounds was in the range of 5.26–5.37 μ_B, close to that of the high spin state Fe²⁺. Below these temperatures the paramagnetic moment was reduced to 4.23–4.35 μ_B.The antiferromagnetic spin axis of FeV₂S₄ was in the neighborhood of the [101] direction and that of FeV₂Se₄ and FeTi₂Se₄ in the direction of the c-axis. The large magnetic anisotropy observed and the preference of the magnetic moments for the direction of the c-axis were attributed to the spin-orbit interaction of Fe²⁺ electrons in the trigonal crystal field.     

Rb2BaNb2Se11: A new quaternary niobium polyselenide with infinite anionic chains composed of Nb2Se11 building block

The quaternary compound Rb₂BaNb₂Se₁₁ has been synthesized by reacting Nb metal with an in situ formed flux of Rb₂Se₃, BaSe and Se at 773 K. Rb₂BaNb₂Se₁₁ crystallizes in the monoclinic space group P2₁/c with four formula units and lattice parameters a=7.8438(5) Å, b=13.6959(6) Å, c=17.0677(13) Å, β=97.917(9)°. The structure consists of one-dimensional anionic chains formed by interconnection of dimeric [Nb₂Se₁₁] units. The chains are directed along the crystallographic c-axis with Rb⁺ and Ba²⁺ ions being located between the chains. The [Nb₂Se₁₁] units are formed by face sharing of two NbSe₇ bipyramids and are joined by Se₂²⁻ dianions to form infinite ¹_∞[Nb₂Se₁₁⁴⁻] chains. The compound was characterized with infrared spectroscopy in the FIR region, Raman and UV/Vis diffuse reflectance spectroscopy.