Plasma Characteristics of a Ni–Zn Ferrite Enhanced Internal-Type Inductively Coupled Plasma Source Operated at 2 and 13.56 MHz

Plasma and electrical characteristics of an internal-type inductively coupled plasma source with a Ni–Zn ferrite module installed near the antenna were investigated for different rf power frequencies of 2 and 13.56 MHz. Due to the lower heating of the Ni–Zn ferrite module on the antenna for the operation at 2 MHz compared to the operation at 13.56 MHz, higher plasma density and lower rf rms antenna voltage were resulted for the operation at 2 MHz in addition to more stable plasma characteristics. By the application of 500 W of rf power to the source, a high plasma density of 8 × 10¹¹ cm⁻³ which is about four times higher than that with 13.56 MHz could be obtained at the pressure of 10 mTorr Ar. When photoresist etch uniformity was measured for the operation with 2 MHz by etching photoresist on a 300 mm diameter substrate using 10 mTorr Ar/O₂ (9:1) mixture, the etch uniformity of about 5.5% could be obtained.     

Spatial distributions of metastable argon,temperature and electron number density in an inductively coupled argon plasma

Spatially resolved radial distributions of excitation temperature and electron number density in an argon ICP were obtained. The argon excitation temperature and electron number density near the plasma center were found to 7000 K and 5 × 10¹⁵ cm^?3, respectively, at an RF power of 1.5 kW and a carrier argon flow rate 0.65 1 min^?1.Various distributions of the absorbance at the Ar I 811.5 nm line, which has one of the metastable levels as the lower level, were obtained with and without carrier argon flow, where an MIP was used as a light source. Introduction of a large amount of potassium did not influence the distribution of the absorbance. The emission intensities at Ar I 811.5 nm were also measured for comparison.     

Plasma Characteristics of Internal Inductively Coupled Plasma Source with Ferrite Module

Electrical and plasma properties of a U-shaped internal inductively coupled plasma (ICP) source with/without a Ni-Zn ferrite module installed above the ICP antenna were investigated. By installing the ferrite module on the antenna, the increase of plasma density and the decrease of plasma potential could be observed. The increase of plasma density was related to the efficient inductive coupling to the plasma by concentrating the induced magnetic field between the antenna and the substrate. At 800 W of ICP power and 20mTorr Ar, a high density plasma on the order of 4.5′10¹¹/cm³ could be obtained.     

Plasma Characteristics and Antenna Electrical Characteristics of an Internal Linear Inductively Coupled Plasma Source with a Multi-Polar Magnetic Field

The development of a large-area plasma source with high density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, a novel internal-type linear inductive antenna referred to as “double comb-type antenna” was used for a large-area plasma source with the substrate area of 880 mm × 660 mm and the effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas on the order of 3.2 × 10¹¹ cm^?3 which is 50% higher than that obtained for the source without the magnetic field could be obtained at the pressure of 15 mTorr Ar and at the inductive power of 5,000 W with good plasma stability. The plasma uniformity <3% could be also obtained within the substrate area. When SiO₂ film was etched using the double comb-type antenna, the average etch rate of about 2,100 Å/min could be obtained with the etch uniformity of 5.4% on the substrate area using 15 mTorr SF₆, 5,000 W of rf power, and ?34 V of dc-bias voltage. The higher plasma density with an excellent uniformity and a lower rf antenna voltage obtained by the application of the magnetic field are related to the electron confinement in a direction normal to the antenna line.     

Characterization of laser induced breakdown plasmas used for measurements of arsenic,antimony and selenium hydrides

Studies have been performed to characterize laser induced breakdown spectroscopy (LIBS) plasmas formed in Ar/H₂ gas mixtures that are used for hydride generation (HG) LIBS measurements of arsenic (As), antimony (Sb) and selenium (Se) hydrides. The plasma electron density and plasma excitation temperature have been determined through hydrogen, argon and arsenic emission measurements. The electron density ranges from 4.5 × 10¹⁷ to 8.3 × 10¹⁵ cm^?3 over time delays of 0.2 to 15 μs. The plasma temperatures range from 8800 to 7700 K for Ar and from 8800 to 6500 K for As in the HG LIBS plasmas. Evaluation of the plasma properties leads to the conclusion that partial local thermodynamic equilibrium conditions are present in the HG LIBS plasmas. Comparison measurements in LIBS plasmas formed in Ar gas only indicate that the temperatures are similar in both plasmas. However it is also observed that the electron density is higher in the Ar only plasmas and that the emission intensities of Ar are higher and decay more slowly in the Ar only plasmas. These differences are attributed to the presence of H₂ which has a higher thermal conductivity and provides additional dissociation, excitation and ionization processes in the HG LIBS plasma environment. Based on the observed results, it is anticipated that changes to the HG conditions that change the amount of H₂ in the plasma will have a significant effect on analyte emission in the HG LIBS plasmas that is independent of changes in the HG efficiency. The HG LIBS plasmas have been evaluated for measurements of elements hydrides using a constant set of HG LIBS plasma conditions. Linear responses are observed and limits of detection of 0.7, 0.2 and 0.6 mg/L are reported for As, Sb and Se, respectively.     

Destruction of Freon HFC-134a Using a Nozzleless Microwave Plasma Source

In this paper, results of the pyrolysis of Freon HFC-134a (tetrafluoroethane C₂H₂F₄) in an atmospheric pressure microwave plasma are presented. A waveguide-based nozzleless cylinder-type microwave plasma source (MPS) was used to produce plasma for the destruction of Freon HFC-134a. The processed gaseous Freon HFC-134a at a flow rate of 50–212 l min⁻¹ was introduced to the plasma by four gas ducts which formed a swirl flow in the plasma reactor (a quartz cylinder). The absorbed microwave power was 0.6–3 kW. The experimental results showed that the Freon was converted into carbon black, hydrogen and fluorine. The total conversion degree of HFC-134a was up to 84% with selectivity of 100% towards H₂, F₂ and C₂, which means that there was no conversion of HFC-134a into other hydrocarbons. The Freon destruction mass rate and corresponding energetic mass yield were up to 34.5 kg h⁻¹ and 34.4 kg per kWh of microwave energy absorbed by the plasma, respectively.     

Measurement of electron densities by a microwave cavity method in 13.56-MHz RF plasmas of Ar,CF4, C2F6, and CHF3

Electron densit ies have been determined /or RF plasmas that were generated within a microwave resonant cavity by measuring the difference of the resonance frequencies with and without plasma. Since that method only yields a value of the electron density weighted ouer the microwave electric field distribution, to obtain real values an assumption on the spatial distribution of the electron density had to he made. Spatial profiles were taken of the emission of a 4s–5p Ar line at 419.8 not (with a small Ar admixture). The electron densities have been determined as a function of pressure and RF power in Ar, CF₄, C₂ F₆ and CHF, plasmas. The results indicate that the electron density for the last three gases decreases as a function of pressure above 50 m Torr. Typical values for the electron density for the investigated parameter range are 1–6 · 10³ cm^–3. Furthermore, the electron density is the lowest in gases with a high attachment cross .section.     

Advantages and effects of nitrogen doping into the central channel of plasma in axially viewed-inductively coupled plasma optical emission spectrometry

The effects and benefits of N₂ addition to the central channel of the ICP through the nebulizer gas used in ICP OES with axial view configuration were investigated in the present study. The N₂ flow rate, nebulizer gas flow rate, RF power and sample uptake rate were evaluated and compared for two sample introduction systems (pneumatic nebulization/aerosol desolvation and conventional pneumatic nebulization). It was observed that N₂ did not affect solution nebulization and aerosol transport but affects the ICP characteristics. The higher thermal conductivity of N₂ (in comparison with Ar) changes energy distribution in the ICP, observed by monitoring the signals of Ar emission lines and sodium emission. The ratio Mg(II)-280.270 nm/Mg(I)-285.213 nm was utilized as a diagnostic tool for plasma robustness. The addition of N₂ (20 mL min⁻¹) increased plasma robustness significantly and mitigated effects caused by Na, K and Ca. For 40 spectral lines evaluated, it was observed that the emission signals of ionic spectral lines were in general more affected by N₂ than those of atomic spectral lines. Detection limits, precision, sensitivity and linearity of calibration curves obtained using N₂-Ar-ICP were almost similar to those obtained using Ar-ICP. The analysis of 5 different reference materials revealed that accuracy was not degraded by adding N₂ to the Ar-ICP.     

CCl<Subscript>4</Subscript> Decomposition in RF Thermal Plasma in Inert and Oxidative Environments

The decomposition of carbon tetrachloride was investigated in an RF inductively coupled thermal plasma reactor in inert CCl₄–Ar and in oxidative CCl₄–O₂–Ar systems, respectively. The exhaust gases were analyzed by gas chromatography-mass spectrometry. The kinetics of CCl₄ decomposition at the experimental conditions was modeled in the temperature range of 300–7,000 K. The simulations predicted 67.0 and 97.9% net conversions of CCl₄ for CCl₄–Ar and for CCl₄–O₂–Ar, respectively. These values are close to the experimentally determined values of 60.6 and 92.5%. We concluded that in RF thermal plasma much less CCl₄ reconstructed in oxidative environment than in an oxygen-free mixture.     

Effect of RF and microwave oxygen plasma on the performance of Pd gate MOS sensor for hydrogen

The combined effect of microwave and RF oxygen plasma treatment of SiO₂ surface on the hydrogen sensitivity of Pd gate MOS sensor has been studied. Nine different samples of thermally grown SiO₂ surface have been taken and treated with oxygen plasma of different microwave power (100 W, 150 W and 200 W respectively) while keeping RF power fixed (20 W) for different durations (5 min, 10 min and 15 min). Pd gate MOS sensors with these plasma treated SiO₂ surface as dielectric have been fabricated and tested for different concentrations (500–3500 ppm) of hydrogen at room temperature. It is observed that the sensitivity of the sensor increases for higher duration of plasma exposure and also with microwave power but decreases when the sensor is treated with 200 W microwave power for 10 min and 15 min durations. The sensor treated with oxygen plasma of 200 W microwave power for 5 min duration exhibited the highest hydrogen sensitivity (74.4%). Fixed oxide charge density has also been evaluated as a function of exposure time for varying microwave power. Surface morphology of plasma treated SiO₂ surfaces was studied by AFM to have the estimation of porosity. The high sensitivity can be attributed to the fact that oxygen plasma treatment provides the availability of higher number of adsorption sites and modification in the surface state density i.e. surface state density increases for plasma treated sensors.     

Evaluation of the Performance of Small Diode Pumped UV Solid State (DPSS) Nd:YAG Lasers as New Radiation Sources for Atmospheric Pressure Laser Ionization Mass Spectrometry (APLI-MS)

The performance of a KrF^* bench top excimer laser and a compact diode pumped UV solid state (DPSS) Nd:YAG laser as photo-ionizing source in LC-APLI MS is compared. The commonly applied bench-top excimer laser, operating at 248 nm, provides power densities of the order of low MW/cm² on an illuminated area of 0.5 cm² (8 mJ/pulse, 5 ns pulse duration, beam waist area 0.5 cm², 3 MW/cm²). The DPSS laser, operating at 266 nm, provides higher power densities, however, on a two orders of magnitude smaller illuminated area (60 μJ/pulse, 1 ns pulse duration, beam waist area 2 × 10^–3 cm², 30 MW/cm²). In a common LC-APLI MS setup with direct infusion of a 10 nM pyrene solution, the DPSS laser yields a significantly smaller ion signal (0.9%) and signal to noise ratio (1.4%) compared with the excimer laser. With respect to the determined low detection limits (LODs) for PAHs of 0.1 fmol using an excimer laser, LODs in DPSS laser LC-APLI MS in the low pmol regime are expected. The advantages of the DPSS laser with respect to applicability (size, cost, simplicity) may render this light source the preferred one for APLI applications not focusing on ultimately high sensitivities. Furthermore, the impact of adjustable ion source parameters on the performance of both laser systems is discussed in terms of the spatial sensitivity distribution described by the distribution of ion acceptance (DIA) measurements. Perspectives concerning the impact on future APLI-MS applications are given.     

Thermal and exergoeconomic analysis of a dairy food processing plant

The dairy processing industry in India, on an average basis, involves an extensive amount of thermal and electrical energy consumption, i.e. 2.51 × 10⁵ kW MT⁻¹ and 1.44 × 10⁵ kW MT⁻¹, respectively, for an installed milk food processing capacity of 1.21 × 10⁵ TPD. However, energy consumption spectrum depends upon the level of automation along with better utilisation of utility resources. The global ultra-high-temperature (UHT) pasteurised milk trade was valued at € 52.29 billion in 2012 and is expected to reach € 114.38 billion by 2019–2020. In the present work energy, exergy and exergoeconomic evaluation of ultra-high-temperature milk pasteurisation plant have been considered. The overall energy efficiency and efficiency pertaining to executable potential of energy in UHT Milk Processing Unit were reported to be 86.36% and 53.02%. The specific exergy destruction and specific exergy improvement potential were estimated to be 219.23 kJ kg⁻¹ and 137.60 kJ kg⁻¹, respectively. The highest possible retrievable exergy potential of the plant was associated with heating coil, i.e. 158.98 kW, followed by homogeniser (54.62 kW), which pinpointed towards the possibility of huge technical improvement. The processing cost was enumerated to be highest for heating coil (r_k: 38.35%) followed by regeneration-1 (r_k: 23.40%). Further, the total operating cost rate associated with thermodynamic deficiencies of subunits was estimated to be highest for heating coil (4859.82 € H⁻¹) followed by regenerator-2 (1264.88 € H⁻¹) and homogeniser (1187.14 € H⁻¹). The broad survey of thermoeconomic indices of subunits indicated that the level of exergetic destruction was far more on higher side.

     

Tomographically resolved ionization temperatures and electron densities in the inductively coupled plasma determined by the line-to-continuum method

This article is an electronic publication in Spectrochimica Acta Electronica (SAE), the electronic section of Spectrochimica Acta Part B (SAB). The hardcopy text is accompanied by three disks with data files with the hardcopy paper in Word 5.0 and ASCII format, and a disclaimer. The text details the purpose of the work and the structure of the three-dimensional Ar ionization temperature and electron number density data files. The line-to-continuum method was used to evaluate the spatial distribution of Ar ionization temperatures, T_ion, and electron number densities, n_e, within a dry Ar inductively coupled plasma (ICP). The emission measurements were spatially resolved in three dimensions by reconstruction algorithms for computed tomography. The 40.68 MHz Ar ICP was operated at applied r.f. power levels of 0.75 and 1.0 kW. The reconstructed distributions of Ar I line emission (430.0 nm) and continuum emission (428.6 nm) show good reproducibility over a series of five replicate runs. Argon ionization temperatures remain within a 6500–8500 K range throughout the continuum-emission cone of the plasma. Deviations from this temperature range occur in the central channel and around the outer edge of the plasma. Low in the plasma, the central-channel T_ion is cooler than 6000 K. Along the outer edge of the plasma, the line-to-continuum ratio becomes small; this low ratio results in erroneously high temperatures (> 12000 K). The errors in T_ion appear to be due to reproducible artifacts in the reconstruction process that lead to low Ar I line-emission readings along the outer edge of the plasma. Electron densities show a maximum of 8.5 × 10¹⁴ cm⁻³ and 1.2 × 10¹⁵ cm⁻³ at 0.75 and 1.0 kW, respectively. Electron number densities were much better behaved than T_ion due to their dependence on the square-root of continuum measurements and only the fourth-root of T_ion.     

Influence of dry density on HTO diffusion in GMZ bentonite

With the low permeability and high swelling property, Gaomiaozi (GMZ) bentonite is regarded as the favorable candidate backfilling material for a potential repository. The diffusion behaviors of HTO in GMZ bentonite were studied to obtain effective diffusion coefficient (D _e) and accessible porosity (ε) by through- and out-diffusion experiments. A computer code named Fitting for diffusion coefficient (FDP) was used for the experimental data processing and theoretical modeling. The D _e and ε values were (5.2–11.2) × 10⁻¹¹ m²/s and 0.35–0.50 at dry density from 1,800 to 2,000 kg/m³, respectively. The D _e values at 1,800 kg/m³ was a little higher than that of at 2,000 kg/m³, whereas the D _e value at 1,600 kg/m³ was significantly higher (approximately twice) than that of at 1,800 and 2,000 kg/m³. It may be explained that the diffusion of HTO mainly occurred in the interlayer space for the highly compacted clay (dry density exceeding 1,300 kg/m³). 1,800 and 2,000 kg/m³ probably had similar interlayer space, whereas 1,600 kg/m³ had more. Both D _e and ε values decreased with increasing dry density. For compacted bentonite, the relationship of D _e and ε could be described by Archie’s law with exponent n = 4.5 ± 1.0.     

Spatial profile measurement of electron number densities and analyte line intensities in an inductively coupled plasma

A versatile instrument for spatial profile measurement has been developed and applied to the measurement of electron number densities and analyte emission intensities in an inductively coupled plasma (ICP). A precise Y-Z stage on which the ICP source was mounted was set on a rail-based optical bench. By translating the ICP source with a precision of ± 0.01 mm, the H_β Stark broadening and analyte line intensities were measured with the use of a silicon intensified target (SIT) and a photomultiplier (PMT). Micro-computer assisted data acquisition allowed it to measure a large number of emission profiles in a short period. The ease of acquisition enabled to build up complete contour maps of electron number densities, Ca neutral atom (Ca I) and Ca ion (Ca II) line intensities, and intensity ratios of the Ca II and Ca I lines. The maximum electron number density was 4 × 10¹⁵ cm^?3 occurring low in the plasma and 5 mm off axis. In a contour map of the electron number densities a hollow region was found low in the plasma, and the distribution pattern looked like a deep “trench”. Along the central channel of the ICP, the peak position of Ca II emission occurred higher than that of Ca I emission, and the spatial distribution of Ca II emission was wider and taller than that of Ca I emission. It has been verified that Ca I is emitted mainly at the region where the electron number density is less than 1 × 10¹⁴ cm^?3.     

Characteristics of Light Emission and Radicals Formed by Contact Glow Discharge Electrolysis of an Aqueous Solution

In this work, light emissions and radicals formed by plasma of contact glow discharge electrolysis were investigated. The plasma was generated by glow discharges at the tip of a Pt anode in contact with a sulfuric acid solution. Emissions of H atoms and OH radicals were observed when the applied voltage was above 430 V. When the applied voltage increased to 450 V, emissions of O atoms were additionally detected. The emission intensities of these radicals and atoms increased with the increasing applied voltage. When the applied voltage exceeded 460 V, thermal radiation from the Pt anode was apparent in the visible and near infrared region. Electron temperature of the plasma increased with the applied voltage from 1.0 × 10⁴ to 1.5 × 10⁴ K by comparison of the intensities of H_α and H_β lines. The mean electron density was estimated to be 7.4 × 10¹⁷ cm⁻³ by the method of Stark broadening.     

Mixed-gas inductively coupled plasma atomic emission spectrometry using a direct injection high efficiency nebulizer

Experimental studies and computer simulations were conducted to identify plasma operating conditions and to explore and contrast the excitation conditions of Ar, Ar-O2, and Ar-He inductively coupled plasmas (ICPs) for the introduction of microliter volumes of sample solutions with a direct injection high efficiency nebulizer (DIHEN). The best MgII 280.270 nm/MgI 285.213 nm ratio (6.6) measured with Ar ICP atomic emission spectrometry for the DIHEN (RF power = 1500 W; nebulizer gas flow rate = 0.12 L min(-1)) was less than the ratio (8.2) acquired on the same instrument for conventional nebulization (1500 W and 0.6 L min(-1)). Addition of small amounts of O2 or He (5%) to the outer gas flow improved excitation conditions in the ICP, that is, a more robust condition (a MgII/MgI ratio of up to 8.9) could be obtained by using the DIHEN with Ar-O2 and Ar-He mixed-gas plasmas, thereby minimizing some potential spectroscopic and matrix interferences, in comparison to Ar ICPAES.     

Evaluation and application of argon and helium microstrip plasma for the determination of mercury by the cold vapor technique and optical emission spectrometry

The suitability of a 2.45-GHz atmospheric pressure, low-power microwave microstrip plasma (MSP) operated with Ar and He for the determination of Hg by continuous-flow cold vapor (CV) generation, using SnCl₂/HCl as the reducing agent, and optical emission spectrometry (OES) using a small CCD spectrometer was studied. The areas of stability for a discharge in the Ar and in the He MSP enclosed in a cylindrical channel in a quartz wafer were investigated. The excitation temperatures as measured for discharge gas atoms (Ar I, He I), and the electron number densities at 35–40 W and 15–400 mL min⁻¹ were found to be at the order of 3,200–5,500 K and 0.8 × 10¹⁴–1.6 × 10¹⁴ cm⁻³, respectively. The relative intensity of the Hg I 253.6-nm line and the signal-to-background ratio as a function of the forward power (35–40 W) as well as of the flow rate of the working gas (15–400 mL min⁻¹) were evaluated and discussed. For the selected measurement conditions, the Ar MSP was established to have the lower detection limit for Hg (0.6 ng mL⁻¹) compared with the He MSP. The linearity range is up to 300 ng mL⁻¹ and the precision is on the order of 1–3%. With the optimized CV Ar MSP-OES method a determination of Hg in spiked domestic and natural waters at concentration levels of 20–100 μg L⁻¹ and an accuracy of 1–4% could be performed. In an NIST domestic sludge standard reference material, Hg (3.64 μg g⁻¹) could be determined with a relative standard deviation of 4% and an agreement better than 4%.     

Effect of Radiofrequency Plasma Assisted Grafting of Polypropylene on the Properties of Muga Silk Yarn

Radiofrequency (RF) Ar/propylene glow discharge is utilized for grafting polypropylene onto muga silk yarn at working pressure of 1.2?×?10^?1 mbar and in the of RF power range of 20?C80?W. The plasma discharge is diagnosed using self-compensated emissive probe to study the variation of ion energy impinging on the substrates with RF power. From chemical compositional analysis, a possible grafting mechanism between propylene and muga yarn is proposed by considering the charge-transfer initiation through the formation of electron-donor?Cacceptor (EDA) complex. X-ray photoelectron spectroscopy reveals that at RF power values of 60?C80?W, the ion sputtering effect becomes dominant over plasma grafting thereby leading to severe destruction in chemical structure of the polypropylene grafted (PP-grafted) muga yarns. The experimental results show that PP-grafted muga yarns exhibit improved mechanical strength and hydrophobic behavior as compared to the virgin yarn. The properties of the PP-grafted muga yarns are observed to be dependent on atomic concentration, surface morphology as well as the results obtained from plasma discharge characteristics.     

Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition

Homoepitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition (CVD) with SiHCl₃ (TCS)–H₂–Ar gas mixtures. The addition of a small amount of H₂ has been found to not only modify the film structure from polycrystalline to epitaxial but also effectively improve the deposition efficiency and film purity by removing Cl in the form of HCl. However, an excess introduction of H₂ decreases the deposition efficiency owing to the shrinkage of the plasma flame. On the other hand, an increase in TCS flow rate increases the epitaxial deposition rate despite exhibiting a saturating tendency, while the material yield tends to decrease gradually due possibly to an increase in the Cl atoms. Also, we observed a critical limit in the TCS flow rate for epitaxial growth, beyond which a polycrystalline film resulted. However, when RF input power was increased, not only the upper limit of TCS flow rate for epitaxy was extended but also the deposition yield was improved so that the deposition rate reached ~700 nm/s with the material yield of >50 % at 30 kW input power with an H₂/TCS ratio of 1.5. Additionally, high input power is found to be beneficial to decrease Cl atom incorporation into the film and improve the Hall mobility of the films. An epitaxial film with a Cl atom concentration of less than 3 × 10¹⁶ cm^?3 and a Hall mobility as high as 250 cm²/(V·s) was obtained at 30 kW input power.