硅光电二极管激光损伤阈值随激光脉宽的变化

对飞秒激光辐照下硅光电二极管损伤阈值进行了实验测量,对从1s到60fs不同脉宽激光辐照下硅光电二极管损伤阈值进行了讨论。实验数据表明,在1s到10ns脉宽范围内损伤所需能量密度近似而非严格地与脉宽的平方根成正比。信号分析表明硅光电二极管的损伤主要由热效应造成,而60fs激光辐照下的损伤阈值为0.1J/cm2,明显偏离普通温度分布预言的趋势。     

飞秒激光微构造硅光电二极管的光电响应

在一定条件SF6气体氛围中,硅可在飞秒激光辐照区产生m量级的尖峰结构。针对不同尖峰高度的微构造硅,在不同温度下退火,采用电子蒸发的方法在正反面分别镀上铝电极,制备出了飞秒激光微构造光电二极管,并测试了其光电响应。实验结果表明：飞秒激光微构造光电二极管的响应随微构造硅光电二极管的尖峰高度和退火温度的不同而不同。尖峰高度为3～4 m的样品在973 K温度退火30 min后,响应度可达0.55 A/W。即使在1100 nm波长处,这种新型的硅光电二极管的响应仍可高达0.4 A/W。     

ns激光辐照硅光电探测器的损伤阈值

以He-Ne激光作为参考光,采用反射光能量法,测量了ns激光辐照硅光电探测器的损伤阈值,并测量了不同功率密度的强激光辐照下探测器对参考光的反射率.实验结果表明,ns激光辐照硅光电探测器的损伤阈值为4.1×106W/cm2,在探测器被强激光损伤的初期阶段,探测器对参考光的反射率下降很快,继续增加入射激光的能量,探测器对参考光的反射率下降趋于平缓.     

硅光电二极管的响应均匀性

用自校准方法对预先校准的四种硅光电二极管的响应均匀性进行了测量。在这种情况下,灵敏面的响应非均匀性是一个不可忽略的测不准因素。     

硅光电二极管的双光子响应

报道用连续光1.3μmInGaAsP半导体激光器探测硅光电二极管中的双光子响应(我们把倍频效应和双光子吸收统称为双光子响应).通过实验,证明在硅光电二极管中必然有倍频吸收引起的光电流存在.     

毫秒脉冲激光致硅光电二极管电学损伤的有限元分析及实验研究

为了研究毫秒脉冲激光致硅基PIN光电二极管电学损伤,基于热传导及弹塑性力学理论,在光电二极管内部材料各向同性并且P-I-N三层结构之间满足温度连续和热流平衡条件下,建立毫秒脉冲激光辐照硅基PIN光电二极管二维轴对称模型,采用有限元方法模拟分析了1064 nm Nd:YAG毫秒量级脉冲激光辐照硅基PIN光电二极管的温度场与应力场分布,并实验测量了硅基PIN光电二极管实验前后的电学参数.结果表明,激光辐照硅基PIN光电二极管时,温升使材料表面熔融、烧蚀,并且在空间上存在温度梯度变化,即激光辐照产生的热与应力使光敏面及硅晶格晶键损伤,最终造成光电探测器的探测性能下降.研究结果可为毫秒脉冲激光辐照硅基PIN光电二极管电学损伤机理奠定基础.     

150 fs~10 ps脉宽下熔石英激光损伤的仿真与分析

基于约化电子数密度增长速率方程,建立了熔石英导带电子数密度随脉冲持续时间变化的模型。利用电子数临界密度这一概念,得到了150 fs~10 ps脉宽下,熔石英激光损伤阈值范围。分析表明,5~10 ps,雪崩电离仍然起主要作用,而光致电离提供的初始电子使雪崩电离不再依赖材料原有的初始电子;当脉宽减小到约为4 ps时,光致电离与雪崩电离作用相等;之后,光致电离起主要作用。通过仿真出的损伤阈值拟合,得到了该脉宽区间下新的脉宽定律：熔石英的损伤阈值正比于脉宽的0.38次方;考虑温度对熔石英损伤阈值的影响,熔石英的损伤阈值正比于脉宽的0.34次方。     

硅光电二极管光谱响应度的分析

从光电二极管的工作原理出发,对硅光电二极管的光谱响应度进行了论述.分析表明,入射光子的能量、材料的禁带宽度和吸收系数是光谱响应曲线具有波长选择性的主要原因.     

150fs～10ps脉宽下熔石英激光损伤的仿真与分析

基于约化电子数密度增长速率方程,建立了熔石英导带电子数密度随脉冲持续时间变化的模型。利用电子数临界密度这一概念,得到了150fs~10ps脉宽下,熔石英激光损伤阈值范围。分析表明,5~10ps,雪崩电离仍然起主要作用,而光致电离提供的初始电子使雪崩电离不再依赖材料原有的初始电子;当脉宽减小到约为4ps时,光致电离与雪崩电离作用相等;之后,光致电离起主要作用。通过仿真出的损伤阈值拟合,得到了该脉宽区间下新的脉宽定律:熔石英的损伤阈值正比于脉宽的0.38次方;考虑温度对熔石英损伤阈值的影响,熔石英的损伤阈值正比于脉宽的0.34次方。     

超短脉冲激光的脉宽测量

采用二次谐波相关技术，研制了一台可用于飞秒超短脉冲激光脉宽测量的光学相关仪。通过合理设计和选择分束、并束装置及光学延迟元件，获得了３：１曲线以及无背景相关曲线，实现了对超短脉冲激光脉宽的测量。     

Effect of energy above laser-induced damage thresholds in the micromachining of silicon by femtosecond pulse laser

A 400 nm second harmonic Ti : sapphire femtosecond laser was applied to structure silicon base on a direct-write process in air. A series of lines were ablated with pulses of 300-fs duration at varying power densities ranging from 50 to 100 nJ of energy on 2″ silicon (1 1 1) wafers. In this event, we investigate and report extensive laser induced thermal damage and redeposition encompassing the ablated lines at high energy levels above the damage threshold of the silicon. In addition, the effect of polarisation on the direction of micromachining is also observed and discussed. The resolution and quality of these lines were also found to hold a linear relationship to the laser energy up to its thermal threshold limit.     

激光波长及脉宽对光学材料抗损伤性能的影响

 基于能带理论,利用激光与光学材料相互作用的理论模型,研究了激光辐照下材料导带自由电子数密度的变化,讨论了材料损伤阈值与激光波长、脉冲宽度、材料禁带宽度之间的关系,数值分析了激光波长和脉冲宽度对损伤阈值的影响。结果表明:当脉宽小于1 ps时,材料损伤阈值随脉宽增大而减小;当脉宽大于1 ps时,材料损伤阈值随脉宽增大而增大;激光波长为10 fs~10 ns,损伤阈值随着波长的减小而减小。     

Radiation damage in Si photodiodes by high-temperature irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy. The degradation of the device performance and the introduction rate of the lattice defects decrease with increasing sample temperature during irradiation. For a 250°C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures. Carbon-related complex as hole capture levels is also mainly responsible for the device degradation for high-temperature neutron irradiation.     

CCD在fs激光辐照下的损伤研究

 用脉宽为60 fs、波长为800 nm的 fs激光辐照电荷耦合器件,研究了电荷耦合器件在fs激光作用下的失效问题。实验得到fs激光作用下电荷耦合器件的失效阈值为4.22×10^－3 J/cm²。这比ns激光作用下电荷耦合器件的损伤阈值低2～3个量级。对该器件进行显微观测,在光敏元上没有发现损伤,但在器件的栅极上发现了明显的激光引起的损伤痕迹。     

Femtosecond and nanosecond laser damage thresholds of doped and undoped triazenepolymer thin films

The influence of pulse duration on the laser-induced damage in undoped or infrared-absorbing-dye doped thin triazenepolymer films on glass substrates has been investigated for single, near-infrared (800 nm) Ti:sapphire laser pulses with durations ranging from 130 fs up to 540 fs and complementarily for infrared (1064 nm) Nd:YAG ns-laser single-pulse irradiation. The triazenepolymer material has been developed for high resolution ablation with irradiation at 308 nm. Post-irradiation optical microscopy observations have been used to determine quantitatively the threshold fluence for permanent laser damage. In contrast to our previous studies on a triazenepolymer with different composition [J. Bonse, S.M. Wiggins, J. Solis, T. Lippert, Appl. Surf. Sci. 247 (2005) 440], a significant dependence of the damage threshold on the pulse duration is found in the sub-picosecond regime with values ranging from ∼500 mJ/cm² (130 fs) up to ∼1500 mJ/cm² (540 fs). Other parameters such as the film thickness (50 nm and 1.1 μm samples) or the doping level show no significant influence on the material behavior upon irradiation. The results for fs- and ns-laser pulse irradiation are compared and analyzed in terms of existent ablation models.     

Femtosecond laser-induced damage in reflector

We have investigated the damage for ZrO₂/SiO₂ 800 nm 45° high-reflection mirror with femtosecond pulses. The damage morphologies and the evolution of ablation crater depths with laser fluences are dramatically different from that with pulse longer than a few tens of picoseconds. The ablation in multilayers occurs layer by layer, and not continuously as in the case of bulk single crystalline or amorphous materials. The weak point in damage is the interface between two layers. We also report its single-short damage thresholds for pulse durations ranging from 50 to 900 fs, which departs from the diffusion-dominated scaling. A developed avalanche model, including the production of conduction band electrons (CBE) and laser energy deposition, is applied to study the damage mechanisms. The theoretical results agree well with our measurements.     

Sub-micron ablation of metallic thin film by femtosecond pulse laser

The ability to machine very small features in a material has a wide range of applications in industry. We ablated holes into thin film of 100 nm thickness made from various metals by femtosecond pulsed laser ablation. Using a Ti:Sapphire laser which supplies a laser pulse of 150 fs duration at central spectrum wavelength of 400 nm, we have produced a series sub-micron holes, whose diameters are less than 200 nm with a focused laser spot of 1.7 μm. We found that the material damage threshold has a great influence on the quality of the produced features. Experimental results shows that the heat-affected zone and the degree of being affected reduce with the increase of threshold value.     

熔石英亚表面划痕激光诱导损伤阈值实验研究

 用原子力显微镜和光学显微镜观测酸蚀后熔石英亚表面划痕,并根据形貌特征将其分为Boussinesq-point-force crack(BPFC)、Hertzian-conical scratch(HCS)和Plastic indent(PI)三类,测试了各类划痕的损伤阈值,讨论了激光损伤机制。结果表明锐度较大的BPFC损伤阈值不超过2.0 J/cm<>2;深度小于1 μm的 HCS阈值可达2.6 J/cm²;形变较大的PI阈值至2.8 J/cm2,形变较小的PI的激光损伤阈值与无缺陷材料相当。BPFC 和深度超过1 μm的HCS是导致熔石英损伤阈值低的主要因素。