Experimental and numerical investigation of microscale hydrogen diffusion flames

Characteristics of microscale hydrogen diffusion flames produced from sub-millimeter diameter (d = 0.2 and 0.48 mm) tubes are investigated using non-intrusive UV Raman scattering coupled with LIPF technique. Simultaneous, temporally and spatially resolved point measurements of temperature, major species concentrations (O₂, N₂, H₂O, and H₂), and absolute hydroxyl radical concentration (OH) are made in the microflames for the first time. The probe volume is 0.02 × 0.04 × 0.04 mm³. In addition, photographs and 2-D OH imaging techniques are employed to illustrate the flame shapes and reaction zones. Several important features are identified from the detailed measurements of microflames. Qualitative 2-D OH imaging indicates that a spherical flame is formed with a radius of about 1 mm as the tube diameter is reduced to 0.2 mm. Raman/LIPF measurements show that the coupled effect of ambient air leakage and pre-heating enhanced thermal diffusion of H₂ leads to lean-burn conditions for the flame. The calculated characteristic features and properties indicate that the buoyancy effect is minor while the flames are in the convection–diffusion controlled regime because of low Peclet number. Also, the effect of Peclet number on the flame shape is minor as the flame is in the convection–diffusion controlled regime. Comparisons between the predicted and measured data indicate that the trends of temperature, major species, and OH distributions are properly modeled. However, the code does not properly predict the air entrainment and pre-heating enhanced thermal-diffusive effects. Therefore, thermal diffusion for light species and different combustion models might need to be considered in the simulation of microflame structure.     

Final results from the ντ appearance search in the NOMAD experiment

An updated analysis of the full NOMAD data corresponding to 1.35 × 10⁶ charged current interactions has been performed to search for neutrino oscillations through ν_τ appearance. This document updates the recently published results on the ν_μ → ν_τ and ν_μ → ν_e oscillations search in NOMAD [1] with a unified analysis of the hadronic channels.     

Rotational absorption spectrum of methylene fluoride in the 20–100 cm region

The pure rotational spectrum of CH₂F₂ was recorded in the 20–100 cm⁻¹ spectral range and analyzed to obtain rotation and centrifugal distortion constants. Analysis of the data yielded rotation constants: A = 1.6392173 ± 0.0000015, B = 0.3537342 ± 0.00000033, C = 0.3085387 ± 0.00000027, τ_aaaa = −(7.64 ± 0.46) × 10⁻⁵, τ_bbbb = −(2.076 ± 0.016) × 10⁻⁶, τ_cccc = −(9.29 ± 0.12) × 10⁻⁷, T₁ = (4.89 ± 0.20) × 10⁻⁶, and T₂ = −(1.281 ± 0.016) × 10⁻⁶cm⁻¹.     

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/Al_xGa_1−xN/GaN heterostructures with different Al mole fraction in the Al_xGa_1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×10³ cm² /Vs⁻¹ for GaN capping layer thickness grater than 100 Å with an Al_0.32Ga_0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×10¹² cm⁻² for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness.     

Compositionally asymmetrical multiquantum wells: “Pseudo-molecules” for giant optical nonlinearities in the infrared (9–11 μm)

Intersubband transitions in quantum well have extremely large oscillator strengths and induce strong nonlinear effects in structures where inversion symmetry is broken, realized by growing AlGaAs quantum wells with asymmetrical A1 gradients. These compositionally asymmetrical multiquantum wells may thus be viewed as giant “quasimolecules” optimized for optimal nonlinearities in the mid infrared. Optical rectification as well as second harmonic generation have been measured in those structures using a continuous CO₂ laser. At 10.6 μm the nonlinear coefficients are more than 3 orders of magnitude higher in these samples than for bulk GaAs (i.e. χ₀⁽²⁾ = 5.3 × 10⁻⁶m/V, χ_2ω⁽²⁾ = 7.2 × 10⁻⁷ m/V) and are in good agreement with theoretical predictions. We present more complex “pseudo-molecules” involving weakly coupled quantum wells. The optical rectification effects in these devices are so large χ₀⁽²⁾ = 1.6 × 10⁻³ m/V) that application to infrared detection may be envisioned.     

Effects of superstrings in collisions

Superstring theory in d = 10 dimensions after Calabi—Yau compactification yields a minimum low-energy gauge group SU(3)_C × SU(2)_L × U(1)_Y × U(1)_E. The low-energy theory includes particles with the quantum numbers of 27 representations of E₆, each of which contains an extra neutrino ν^c conventionally called a “right-handed neutrino”. The contributions of ν and ν^c to through Z⁰ and Z_E mixing is calculated. Small contributions are found of the new right-handed neutrino and of the superstring boson Z_E to σ(e⁺e⁻ → γ + nothing).     

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk growth by the sublimation method has resulted in the commercial release of 100 mm n-type 4H-SiC wafers and the demonstration of micropipe densities as low as 0.7 cm⁻² over a full 100 mm diameter. Modelling results link the formation of basal plane dislocations in SiC crystals to thermoelastic stress during growth. A warm-wall planetary SiC-VPE reactor has been optimized up to a 8×100 mm configuration for the growth of uniform 0.01–80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1×10¹⁴ cm⁻³, and intentional p- and n-type doping from 1×10¹⁵ to >1×10¹⁹ cm⁻³. We address the observed degradation of the forward characteristics of bipolar SiC PiN diodes [H. Lendenmann, F. Dahlquist, J.P. Bergmann, H. Bleichner, C. Hallin, Mater. Sci. Forum 389–393 (2002) 1259], and discuss the underlying mechanism due to stacking fault formation in the epitaxial layers. A process for the growth of the epitaxial layers with a basal plane dislocation density <10 cm⁻² is demonstrated to eliminate the formation of these stacking faults during device operation [J.J. Sumakeris, M. Das, H.McD. Hobgood, S.G. Müller, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter Jr., Mater. Sci. Forum 457–460 (2004) 1113].     

An experimental and numerical study on the adequacy of CH as a flame marker in premixed methane flames

The CH radical is frequently used as a flame marker because it is relatively short-lived and is present over a narrow region in flames. Discontinuities in the CH field are thus often interpreted as localized extinction of the flame. Recently, however, the adequacy of CH laser-induced fluorescence (LIF) as a flame marker was questioned by an experimental study of flame–vortex interactions in highly N₂-diluted premixed methane flames. We demonstrate both experimentally and numerically that anomalies in the transient response of CH in this earlier study were due to reactant composition variations in the vortex. In addition, we evaluate the adequacy of CH LIF as a flame marker over a much broader range of conditions. Previous numerical studies showed that heat release rate correlates reasonably well with peak [HCO] and the concentration product [OH][CH₂O], but poorly with [CH], in highly N₂-diluted premixed methane flames. Here, the correlation between heat release rate and CH is investigated both experimentally, by performing simultaneous measurements of CH, OH, and CH₂O LIF, and numerically. We consider undiluted and N₂-diluted premixed methane flames over a range of strain rates and stoichiometries. Results are reported for flames subjected to unsteady stretch and reactant composition variations. For all N₂-dilution levels considered, the peak CH LIF signal correlates poorly with heat release rate when the stoichiometry of the reactant mixture changes from rich to lean. However, when flames are subjected to stretch, the correlation between CH and heat release rate improves as the N₂-dilution level decreases. The correlation is reasonably good for undiluted flames with equivalence ratios of 0.8 < Φ < 1.2. This result is particularly encouraging, given the relevance of undiluted flames to practical applications, and it motivates further investigation of the parameter space for which difficulties may exist in using CH as a flame marker.     

Influence of oxygen growth pressure on laser ablated Cr-doped In2O3 thin films

We present a systematic investigation of the effects of oxygen growth pressure on the structural, optical, and electrical properties of In₂O₃:Cr thin films grown by pulsed laser deposition. X-ray diffraction analysis showed increases in lattice constant from 10.103 Å to 10.337 Å, and in particle size from 13.9 nm to 35.5 nm as the oxygen growth pressure increased from 7.5 × 10⁻⁶ Torr to 7.5 × 10⁻³ Torr, respectively. The observed shift in the X-ray diffraction peaks to lower angles was assumed to be caused by the reduction in the lattice defect density, precisely oxygen vacancies. The optical transparency increased with partial oxygen pressure (P_O2), and an average transmittance of 85% was obtained at 7.5 × 10⁻³ Torr. The films are highly conducting with resistivity as low as 2 × 10⁻⁴ Ω cm and mobility as high as 133 cm/V s. Temperature dependent resistivity measurements in the 45 < T < 300 K temperature range reveal that films grown at 7.5×10⁻⁶≤P_O2≤7.5×10⁻⁴ Torr exhibit negative temperature coefficient of resistivity (TCR) below approximately T = 60 K, T = 120 K, T = 160 K; then positive TCR in the temperature intervals 60 < T < 300 K, 120 < T < 300 K, and 160 < T < 300 K, respectively. This suggests that two disparate mechanisms govern electrical dc transport in the two temperature regions. Film grown at P_O2 of 7.5 × 10⁻³ Torr displayed typical semiconducting behavior with negative TCR in the whole temperature region.     

Electrical transport, magnetic and thermal properties of icosahedral Al–Pd–Mn quasicrystals

We report measurements of electrical resistivity (ρ), Hall coefficient (R_H), magnetization (M) and specific heat (C_p(T)) of high-quality icosahedral Al_70.4Pd_20.8Mn_8.8 phases with different thermal treatment. An improvement in the quasi-crystallinity upon the annealing treatment caused a drastic increase in ρ up to 7000 μΩ cm accompanied by a very small electronic specific heat coefficient γ. The low temperature ρ(T) data has been analyzed in terms of weak localization and electron–electron interaction effects. The Hall resistivity (ρ_H) is found to be strongly temperature-dependent and varies linearly with the magnetization (M) for the same field and temperature. Magnetization measurement reveals that more conductive samples are more magnetic and vice versa. Magnetic susceptibility (χ) data of all the annealed samples agrees with the Curie–Weiss-like behavior implying the existence of localized moments. The negative Curie–Weiss temperature (θ) indicates strong antiferromagnetic coupling between individual Mn atoms. The magnetic Mn concentration is found to be small, ranging from 1.73×10^-4 for the less magnetic sample studied up to 3×10^-3 for the more magnetic one. The small electronic specific heat coefficient obtained for all the samples suggests a significant reduction in the electronic density of states (DOS) at the Fermi level (E_F) upon thermal annealing treatment.     

Magnetic resonance microscopy of iron transport in methanogenic granules

Interactions between anaerobic biofilms and heavy metals such as iron, cobalt or nickel are largely unknown. Magnetic resonance imaging (MRI) is a non-invasive method that allows in situ studies of metal transport within biofilm matrixes. The present study investigates quantitatively the penetration of iron (1.75 mM) bound to ethylenediaminetetraacetate (EDTA) into the methanogenic granules (spherical biofilm). A spatial resolution of 109 × 109 × 218 μm³ and a temporal resolution of 11 min are achieved with 3D Turbo Spin Echo (TSE) measurements. The longitudinal relaxivity, i.e. the slope the dependence of the relaxation rate (1/T₁) on the concentration of paramagnetic metal ions, was used to measure temporal changes in iron concentration in the methanogenic granules. It took up to 300 min for the iron–EDTA complex ([FeEDTA]²⁻) to penetrate into the methanogenic granules (3–4 mm in diameter). The diffusion was equally fast in all directions with irregularities such as diffusion-facilitating channels and diffusion-resistant zones. Despite these irregularities, the overall process could be modeled using Fick’s equations for diffusion in a sphere, because immobilization of [FeEDTA]²⁻ in the granular matrix (or the presence of a reactive barrier) was not observed. The effective diffusion coefficient (D_ejf) of [FeEDTA]²⁻ was found to be 2.8 × 10⁻¹¹ m² s⁻¹, i.e. approximately 4% of D_ejf of [FeEDTA]²⁻ in water. The Fickian model did not correspond to the processes taking place in the core of the granule (3–5% of the total volume of the granule), where up to 25% over-saturation by iron (compare to the concentration in the bulk solution) occurred.     

Structure and magnetic properties of wedged Co/Ti multilayers

Co/Ti multilayers with wedge-shaped Co or Ti sublayers were prepared using UHV (5×10⁻¹⁰ mbar) DC/RF magnetron sputtering. The planar growth of the Co and Ti layers was confirmed in situ by X-ray photoelectron spectroscopy. Cobalt sublayers grow on sufficiently thick titanium sublayers in the soft magnetic nanocrystalline phase up to a critical thickness d_crit3.0 nm. For a thickness greater than d_crit, the Co sublayers undergo a structural transition to the polycrystalline phase with much higher coercivity. Furthermore, for the Co/Ti multilayers with nanocrystalline Co sublayers with d_Co=2.7 nm we have observed a significant drop of the coercivity — typically from H_c3.5 kA/m to H_c0.2 kA/m — for Ti thickness d_Ti0.35 nm. The above effect could be explained by the existence of a minimum Ti sublayer thickness (d_min0.35 nm), which is required for the nanocrystalline growth of Co, and/or the formation of quasi-continuous non-magnetic layers for d_Tid_min giving rise to a decrease of the exchange energy between Co sublayers. Magnetic domains and walls studies revealed the structural transitions of the Co sublayers.     

Contrasting routes to the Kostka coefficients of λ [boxvr] n (ln)-permutational module expansions for 6n8: Applications to NMR spin clusters under SU(mn)×Ln spin symmetries

Aspects of the higher-n λ( _n) permutational modules associated with Young subgroups of various highly-branched high-n fold algebras, which are pertinent to identical spin NMR clusters, are presented for λ [boxvr] _n (or λ [boxvR] n), aRota p-tuple or number partition; the method of optimal choice for deriving the Λ_[λ′] Kostka coefficients, found in {[λ′]} sets derived from λ permutational module expansions, rests on the ordering of the λ-(shape) to the self-associated diagram(s) in the dominance hierarchy. Hence, physical insight into these cage-cluster NMR systems is developed both from these properties and from the inter-related induced symmetries of GL(n, ) and _n groups. From these associated combinatorial, mapping or scalar invariant aspects of SU(mn)× _n symmetry, one may define the [A]_n( _n) systems of [AX]_n NMR problems in a general semi-topological limit. This corresponds to a high-n _n limit in which the individual spin cluster exhibits a lack of any (intracluster) ‘magnetic equivalence’ properties.     

Polarization spectroscopy of ion-pair states of ICl

Molecular constants for the E0⁺(³P₂) and 1(³P₂) ion-pair states of ICl vapor have been determined using sequential two-photon polarization-labeling spectroscopy. The two states are coupled by a heterogeneous perturbation which is analyzed in some detail for low-lying vibrational levels of 1(³P₂). The I³⁵Cl potential constants for the 1(³P₂) state and the rotation-vibration constants for the set of f sublevels—i.e., the constants unaffected by coupling with the E state—are (in cm⁻¹) 1(³P₂): Y_0,0= 39103.814(32), Y_1,0= 170.213(15), Y_2,0= −0.4528(22), Y_3,0= −7.0(12) × 10⁻⁴, Y_4,0= −1.48(24) × 10⁻⁵ and Y_5,0= −6.6(19) × 10⁻⁸, Y^(f)_0,1= 5.6878(17) × 10⁻² Y^(f)_1,1= −2.110(24) × 10⁻⁴, Y^(f)_2,1= −1.23(62) × 10⁻⁷, and Y^(f)_0,1= −3.08(22) × 10⁻⁸Likewise, the I³⁵Cl constants determined for the E 0⁺(³P₂) state are E 0⁺(³P₂: Y_0,0= 39054.38(61), Y_1,0= 166.96(10), Y_2,0 = −0.3995(42), Y_0,1= 5.738(31) × 10⁻², and Y_1,1= −1.67(26) × 10⁻⁴Practical constraints in pumping the sequence E 0⁺ ← B 0⁺ ← × 0⁺ restrict the analysis of the E state to levels v = 9–15. Given the long extrapolation to the equilibrium state the 3σ statistical uncertainties quoted for these constants should be treated with caution.     

The bending energy levels of C2H2

Absorption spectra of C₂H₂ have been recorded between 50 and 1450 cm⁻¹, with a resolution always better than 0.005 cm⁻¹, using two different Fourier transform spectrometers. Analysis of the data provided two sets of results. First, the bending levels with Σ_t V_t(t = 4, 5) ≤ 2 were characterized by a coherent set of 34 parameters derived from the simultaneous analysis of 15 bands, performed using a matrix Hamiltonian. The following main parameters were obtained (in cm⁻¹): ω₄⁰ = 608.985196(14), ω₅⁰ = 729.157564(10); B₀ = 1.17664632(18), α₄ = −1.353535(86) × 10⁻³, α₅ = −2.232075(40) × 10⁻³; q₄⁰ = 5.24858(12) × 10⁻³, and q₅⁰ = 4.66044(12) × 10⁻³, with the errors (1σ) on the last quoted digit. Second, a more complete set of bending levels with Σ_t V_t ≤ 4, some of which have never previously been reported, and also including V₂ = 1 have been fitted to 80 parameters. This simultaneous fit involved 43 bands and used the same full Hamiltonian matrix. Some perturbations which affect the higher excited levels are discussed.     

Measurement of thickness of a thin film by means of laser interference at many incident angles

An optical method for directly measuring the thickness of a thin transparent film has been proposed by means of multi-wave laser interference at many incident angles, and confirmed experimentally by means of equipment made on an experimental basis. Two methods are available: one can be used when an index of refraction of the film, a wavelength λ, and two successive angles of incidence at which the sinusoidal light intensity has minimum values, are known (Method I), and another can be used without an index of film refraction when three successive angles of incidence and a wavelength are known (Method II). The smallest measurable thickness is 1.43λ for Method I, and 2.5λ for Method II. The largest measurable thickness is about 100λ for both methods. The measurement error by means of numerical calculation is Δh/h−1.01×10⁻², and that obtained experimentally with an angular resolution of incident light of 0.3° is Δh/h7×10⁻² for Method I. The refractive index can also be measured by means of Method II.     

Electron stimulated desorption of CO from

The electron impact behavior of CO adsorbed on was investigated. The desorption products observed were neutral CO, CO⁺, and O⁺. After massive electron impact residual carbon, C/W = 0.15, but not oxygen was also found, suggesting that energetic neutral O, not detected in a mass analyzer must also have been formed. Formation of β-CO, i.e., dissociated CO with C and O on the surface was not seen. The total disappearance cross section varies only slightly with coverage, ranging from 9 × 10 ⁻¹⁸ cm² at low to 5 × 10⁻¹⁸ cm² at saturation (CO/W = 0.75). The cross section for CO⁺ formation varies from 4 × 10⁻²² cm² at satura to 2 × 10⁻²¹ cm² at low coverage. That for O⁺ formation is 1.4 × 10⁻²² cm² at saturation and 2 × 10⁻²¹ cm² Threshold energies are similar to those found previously [J.C. Lin and R. Gomer, Surf. Sci. 218 (1989) 406] for and CO/Cu₁/W(110) which suggests similar mechanisms for product formation, with the exception of β-CO on clean W(110). It is argued that the absence or presence of β-CO in ESD hinges on its formation or absence in thermal desorption, since electron impact is likely to present the surface with vibrationally and rotationally activated CO in all cases; β-CO formation only occurs on surfaces which can dissociate such CO. It was also found that ESD of CO led to a work function increase of the remaining Pd₁/W(110) surface of 500 meV, which could be annealed out only at 900 K. This is attributed to surface roughness, caused by recoil momentum of energetic desorbing entities.     

The Multidimensional Filter Diagonalization Method: I. Theory and Numerical Implementation

The theory and numerical aspects of the recently developed multidimensional version of the filter diagonalization method (FDM) are described in detail. FDM can construct various “ersatz” or “hybrid” spectra from multidimensional time signals. Spectral resolution is not limited by the time-frequency uncertainty principle in each separate frequency dimension, but rather by the total joint information content of the signal, i.e., N_total = N₁ × N₂ × × N_D, where some of the interferometric dimensions do not have to be represented by more than a few (e.g., two) time increments. It is shown that FDM can be used to compute various reduced-dimensionality projections of a high-dimensional spectrum directly, i.e., avoiding construction of the latter. A subsequent paper (J. Magn. Reson. 144, 357–366 (2000)) is concerned with applications of the method to 2D, 3D, and 4D NMR experiments.     

Line Intensities in the ν1, ν3, and 2ν2 Bands of H2Se

Using a high-resolution Fourier transform spectrum of hydrogen selenide in natural abundance, about 600 intensities of lines belonging to the ν₁, ν₃, and 2ν₂ bands of H₂⁸⁰Se were measured. A least-squares fit of these intensities was performed, allowing determination of the vibrational transition moments of these bands and their rotational corrections. Finally, the first derivatives of the dipole moment with respect to the normal coordinates q₁ and q₃ were found to be ∂μ_χ/∂q₁ = (−0.5938 ± 0.010) × 10⁻¹ and ∂μ_z/∂q₃ = (0.5683 ± 0.010) × 10⁻¹ Debye, respectively.     

Weak-field magnetoresistance anomaly and Shubnikov–de Haas oscillations in Sn-doped InSb thin films on GaAs (100) substrates

Distinctive magnetoresistance (MR) effects in weak magnetic fields before the appearance of Shubnikov–de Haas (SdH) oscillations at low temperatures in Sn-doped (7×10¹⁶ cm⁻³) InSb films grown on GaAs(100) substrates by MBE have been investigated with decreasing film thickness d from 1 μm. The negative MR found in weak magnetic fields for d0.5 μm can be broadly divided into two regimes: T-sensitive negative MR below B_c observed with anisotropy between parallel and perpendicular magnetic field and a T-insensitive parabolic one above B_c observable only under in-plane magnetic fields. The latter is ascribable to the skipping orbit effect due to surface boundary scattering. In vanishing magnetic fields far below B_c, the negative MR reduces with decreasing d and the different positive MR overlaps with it below 0.5 μm, eventually dominating the positive MR at d0.2 μm. These results have been analyzed using a two-layer model for the films, where the composition of the upper layer under the surface and the lower one adjacent to the InSb/GaAs interface is assumed. The MR data in the extremely weak magnetic fields below 100 G for each layer have been successfully fitted to the two-dimensional (2D) weak localization (WL) theory. These results explain that the crossover from the 2D WL to the weak anti-localization (WAL) occurs when the interface is approached with the increase of SO interaction in the layers caused by the increased influence of the asymmetric potential at the hetero interface (Rashba term) and the SO rate in the intrinsic InSb film due to the crystal field of the zinc-blende structure (Dresselhaus term) is as small as τ_so⁻¹3×10⁸ s⁻¹.