Compact 120 TW Ti:sapphire laser system with a high gain final amplifier

A 120 TW/36 fs laser system based on Ti:sapphire chirped-pulse amplification (CPA) has been successfully established in our lab. The final four pass Ti:sapphire amplifier pumped by an energetic single-shot Nd:YAG—Nd:glass laser was designed and optimized. With 24 J/8 ns pump energy at 532 nm, 300 mJ/220 ps chirped pulse was amplified to 5.98 J in this amplifier, and a total saturated gain of 20 was achieved. The focused intensity of compressed beam could reach to 10²⁰ W/cm² with the M² of 2.0.     

Low-threshold operation of a 355-nm pumped nanosecond β-BaB2O4 optical parametric oscillator

We report the low-threshold operation of a nanosecond β-BaB₂O₄ optical parametric oscillator (OPO) pumped by the third harmonic of a Q-switched Nd:YAG laser. Using cylindrical focusing of the pump beam, a threshold pulse energy of 0.5 mJ is obtained at the signal wavelength of 560 nm, which is about sixteen times lower than that of a spherical focusing configuration. The importance of diffraction loss in the design of tightly focused OPOs is discussed in terms of a simple extension of the conventional OPO model.     

Co:LaMgAl11O19 saturable absorber Q-switch for a 1.319 μm Nd:YAG laser

Passively Q-switched output of a flashlamp-pumped 1.319 μm Nd:YAG laser is realized by using Co²⁺:LaMgAl₁₁O₁₉ (Co:LMA) as saturable absorber. When initial transmission of the saturable absorber T₀ is 78%, a Q-switched output pulse with pulse width (FWHM) 44.8 ns and pulse energy 17.4 mJ is obtained, corresponding to 19.3% of the free-running energy under the equal pumping energy of 45.4 J. The experimental results show that the higher T₀ will result in a lower pumping threshold of the laser, but lower T₀ can make the laser generate pulses with higher single-pulse energy, narrower pulse width, and accordingly higher peak power.     

飞秒BBO光参量放大中闲频光二次谐波的产生

由于相位匹配条件和非线性晶体透光范围的限制，400nm蓝光抽运的飞秒β-BaB₂O₄（BBO）光参量放大（OPA）输出的参量光调谐范围有限，很难得到波长小于460nm的蓝光和近紫外光.实验采用1kHz钛宝石九通啁啾脉冲放大器的倍频蓝光作抽运光，超连续白光 作种子光，在Ⅰ类非共线相位匹配条件下，利用宽带的飞秒BBO OPA，在一定的实验参数下 获得了530—810nm放大的信号光，以及810nm—17μm波段范围的闲频光.与此同时 ，还获得了410—700nm连续可调的闲频光的二次谐波，其与闲频光层叠分布，单脉冲能量 为26μJ，转换效率大于5%.仅利用单块晶体的飞秒BBO OPA就可以获得410—810nm连 续可调的飞秒脉冲输出，从而为更多研究和应用的需要提供了重要的光源.对飞秒光参量放 大中闲频光二次谐波产生的条件也进行了理论分析. 关键词： 二次谐波 闲频光 非共线相位匹配 飞秒光参量放大     

Carbon nanotube–polymer composites for photonic devices

We report the fabrication of high optical quality single wall carbon nanotube polyvinyl alcohol composites and their application in nanotube based photonic devices. These show a broad absorption of semiconductor tubes centred at 1.55 μm, the spectral range of interest for optical communications. The films are used as mode-lockers in an erbium doped fibre laser, achieving 700 fs mode-locked pulses. Raman spectroscopy shows no damage after a long time continuous laser operation.     

Nucleation, growth and morphology of Co thin films on Ag(1 1 0)

Scanning tunneling microscopy (STM) experiments reveal that Co growth on Ag(1 1 0), at coverages of Co < 1 ML and low substrate temperatures (150 K), involves a concomitant insertion of Co into the top Ag layer and exchange of Ag out onto the surface. At 300 K, coverages of Co > 1 ML gives rise to a 3D nanocluster growth on the surface, with the clusters covered by Ag. Depending slightly on coverage, the clusters have a typical diameter of 3 nm and a height of 0.4 nm. Upon annealing to 500 K, major changes are observed in the morphology of the surface. STM and AES show that there is a reduction of the number of Co islands on the surface, partly due to subsurface Co cluster migration and partly due to sintering into larger clusters.     

Optical parametric chirped pulse amplification based on photonic crystal fibre

A compact two-stage optical parametric chirped pulse amplifier based on photonic crystal fibre is demonstrated.A 1064-nm soliton pulse is obtained in a home-made photonic crystal fibre (PCF) with femtosecond pulse pumping and then amplified to 2 mJ in an Nd:YAG regenerative amplifier.After the amplified pulses pass through the LBO crystal,the 532-nm double-frequency light with an energy of 0.8 mJ and a duration of over 100 ps at 10-Hz repetition rate is generated as a pump source in the following two-stage optical parametric amplification (OPA).The 850-nm chirped signal light gain from the stretcher is 1.5×10 4 in the first-stage OPA while it is 120 in the second-stage OPA.The total signal gain of optical parametric chirped pulse amplification (OPCPA) can reach 1.8×10 6.     

Catalyst-free synthesis and luminescence of aligned ZnO nanorods

Quasi-aligned undoped ZnO nanorods with diameter in the range 100–300 nm and length of several micrometers have been grown catalyst-free on Si(1 0 0) wafer in a one-step process by direct heating of Zn powders. All nanowires are single crystals and are aligned vertically to the substrate surface with c-axis preferred orientation. XRD, HRTEM and Raman studies revealed that the ZnO nanorods have wurtzite phase, are highly crystalline and well aligned with the lattice parameters a=0.32 nm and c=0.52 nm. The PL spectra measured at different temperatures are dominated by excitonic emission at 380 nm and less intense below band gap emission band centered at 520 nm.     

Laser scribing of polycrystalline thin films

We have investigated the use of several different types of lasers for scribing of the polycrystalline materials used for thin-film solar cells: CdTe, CuInGaSe₂ (CIGS), ZnO, SnO₂, Mo, Al, and Au. The lasers included four different neodymium–yttrium–aluminum garnet (Nd:YAG) (both 1064 and 532 nm wavelengths), a Cu vapor (511/578 nm), an XeCl excimer (308 nm), and a KrF excimer (248 nm). Pulse durations ranged from 0.1 to 250 ns. We found that the fundamental and frequency-doubled wavelengths of the Nd:YAG systems work well for almost all of the above materials except for the transparent conductor ZnO. The diode-laser-pumped Nd:YAG was particularly convenient to use. For ZnO the uv wavelengths of the two excimer lasers produced good results. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations (≥250 ns) are advantageous. The frequently observed problem of ridge formation along the edges of scribe lines in the semiconductor films can be eliminated by control of intensity gradients at the film through adjustment of the focus conditions.     

High-peak power multi-wavelength picosecond pulses generated from a BaWO4 Raman-seeded optical parametric amplifier

We report the generation of high-peak power multi-wavelength picosecond laser pulses using optical parametric amplification (OPA) in BBO seeded with pulses generated in a 5-mm length BaWO₄ crystal by stimulated Raman scattering of 18-ps laser pulses at 532 nm. The maximum output energy of the amplified first-Stokes component at 559.7 nm was about 1.76 mJ. The corresponding maximum peak power, pulse duration and spectral line width were measured to be 117.3 MW, 15 ps and 18.0 cm⁻¹, respectively. The multi-wavelength picosecond laser pulses were in the visible and near infrared ranges. Using this Raman-seeded OPA technique, the beam quality of the stimulated Raman scattering pulses can be improved.     

Quantum confinement and interface structure of Si nanocrystals of sizes 3–5 nm embedded in a-SiO2

Spectroscopic ellipsometry and Monte Carlo simulations are employed to answer the fundamental question whether the energy gaps of Si nanocrystals with sizes in the range of 3–5 nm, which are embedded in amorphous silica, follow or deviate from the quantum confinement model, and to examine their interfacial structure. It is shown that the optical properties of these nanocrystals are well described by the Forouhi–Bloomer interband model. Analysis of the optical measurements over a photon-energy range of 1.5–5 eV shows that the gap of embedded nanocrystals with a mean size of 3.9 nm follows closely quantum confinement theory. A large band gap expansion (0.65 eV) compared to bulk Si is observed. The Monte Carlo simulations reveal a non-abrupt interface and a large fraction of interface oxygen bonds. This, in conjunction with the experimental observations, indicates that oxygen states and the chemical disorder at the interface have a negligible influence on the optical properties of the material in this size regime.     

A simple scanning semiconductor diode laser source and its application in wavelength modulation spectroscopy around 825 nm

A very simple and inexpensive tunable semiconductor diode laser controller is designed for stable operation of the diode laser. The diode laser controller is stable within +/−8 μA and +/−10 mK, respectively. The noise spectrum of the current controller is studied by FFT analysis. We have used our home-made diode laser system in a tunable diode laser absorption spectrometer (TDLAS) to probe weak overtone transitions of water vapour molecule. The diode laser wavelength is coarsely tuned by changing the operating temperature to probe (2, 1, 1)←(0, 0, 0) band overtone transitions of water vapour within 818–835 nm. To demonstrate line shape study, seven transitions are scanned by ramping the drive current of the diode laser (at constant operating temperature) under different perturber (laboratory air) pressures within the sample cell. A balanced detector and a lock-in amplifier are used for phase sensitive detection purpose. Small current modulation amplitude, balanced detection and proper adjustment of the lock-in amplifier help to obtain a S/N ratio ranging from 100 to 7 using a small sample path length of 1.5 m. Experimentally obtained derivative spectrum is numerically integrated to reveal the original line shape and fitted with a nonlinear least squares fitting program to extract air broadening coefficients and line strength parameters. The spectroscopic line parameters are compared with the results from HITRAN database.     

Photonic generation of microwave signal using a dual-wavelength single-longitudinal-mode distributed Bragg reflector fiber laser

In this paper, a novel all-optical microwave generation technique based on a dual-wavelength single-longitudinal-mode (SLM) distributed Bragg reflector (DBR) fiber laser is proposed and demonstrated. By exploiting spatial hole burning (SHB) effect, this laser could provide stable dual-wavelength SLM operation with a wavelength separation of 0.088 nm corresponding to the microwave signal at 10.484 GHz with a 3 dB bandwidth of 28 kHz. By appropriately adjusting the pump power, dual-wavelength oscillation could be maintained at different temperatures. We have theoretically analyzed the mechanism for microwave generation of the proposed DBR laser, and the calculated microwave frequency is in good agreement with our experimental results. Furthermore, experimental observation shows both of the laser wavelengths and generated microwave signals have good stability at room temperature.     

From Zn microspheres to hollow ZnO microspheres: A simple route to the growth of large scale metallic Zn microspheres and hollow ZnO microspheres

Large scale metallic Zn microspheres and hollow ZnO microspheres are synthesized by thermal evaporation and vapor transport by heating a ZnO/graphite mixture at 1000 °C. Firstly, metallic Zn microspheres are fabricated with diameters in the range of 1–10 μm. The Zn microspheres are then annealed at 600 °C in air, which form hollow semiconducting ZnO microspheres. EDX and XRD spectra reveal that the oxidized material is indeed ZnO. Room temperature photoluminescence spectra of the oxidized material show a sharp peak at 380 nm and a wider broad peak centered at 490 nm. This growth mechanism is discussed and further investigated for other metallic and metal oxide microstructures.     

Highly efficient optical parametric chirped-pulse amplification based on BiB3O6 and β-BaB2O4 crystals at low pump intensity

We report a very high signal gain of 1.13 × 10⁷ at a low pump intensity of 260 MW/cm² in a two-stage optical parametric chirped-pulse amplifier (OPCPA), which is used as a pre-amplifier for a short-pulse front-end Nd: glass high-energy laser system. A signal energy of 0.17 nJ was amplified to 2 mJ with a central wavelength of 1053 nm and a repetition rate of 10 Hz using the OPCPA with a 15 mm-long BBO crystal at optical parametric amplifier (OPA) stage 1 and a 12 mm-long BiBO crystal at OPA stage 2.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Modification of photonic properties in porphyrin-infiltrated opal crystals

Structural, optical and magnetic properties of porphyrin-infiltrated opal hybrid structures were investigated. Bulk samples of synthetic opal were grown by sedimentation technique from colloidal solution of SiO₂ spheres of diameter 250 nm. The structure of the samples was examined by atomic force microscopy. The photonic properties of crystals were investigated by optical measurements in transmission and reflection modes. The stop band was observed in the region 510–550 nm. The photonic properties of synthetic opal crystals were modified by infiltration with aqueous basic solution of iron–porphyrin (FeTPPS) of concentration 1.0 mM. In hybrid samples the absorption bands typical of FeTPPS were observed in the vicinity of the opal stop band. Magnetic properties of FeTPPS-infiltrated opal samples have been studied at 5–300 K in magnetic fields up to 5 T. The FeTPPS-infiltrated opal crystals can be considered as the structures perspective for magnetophotonic devices.     

Dynamics of the collective excitations of the quantum Hall system

Using the non linear optical technique of 3-pulse 4-wave mixing, we study the dynamics of the collective excitations of the quantum Hall system. We excite the system with 100 fs pulses propagating in directions k₁ and k₃ and then probe its time evolution with a delayed pulse k₂. We measure the non-linear optical response from the lowest Landau level along the direction k₁+k₂−k₃. As function of the time delay of pulse k₂, this signal shows striking beats for short time delays (500 fs), followed by a rise (20 ps) and then a decay (100 ps). We identify the microscopic origin of this dynamics by extending the standard theory of ultra fast nonlinear optics to include the effects of the correlations.     

Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition

This study explores the nucleation and morphological evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substrates synthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. The Au–Si islands are formed by Au thin film (1.2–3.0 nm) deposition at room temperature followed by annealing at 700 °C, which are employed as a liquid-droplet catalysis during the growth of the Si-NWs. The Si-NWs are grown by exposing the substrates with Au–Si islands to a mixture of gasses SiH₄ and H₂. The growth temperatures and the pressures are 500–600 °C and 0.1–1.0 Torr, respectively. We found a critical thickness of the Au film for Si-NWs nucleation at a given growth condition. Also, we observed that the dimensional evolution of the NWs significantly depends on the growth pressure and temperature. The resulting NWs are 30–100 nm in diameter and 0.4–12.0 μm in length. For Si (0 0 1) substrates 80% of the NWs are aligned along the 1 1 1 direction which are 30° and 60° with respect to the substrate surface while for Si (1 1 1) most of the NWs are aligned vertically along the 1 1 1 direction. In particular, we observed that there appears to be two types of NWs; one with a straight and another with a tapered shape. The morphological and dimensional evolution of the Si-NWs is significantly related to atomic diffusion kinetics and energetics in the vapor–liquid–solid processes.     

Fabrication of nanopatterned germanium surface by laser-induced etching: AFM, Raman and PL studies

Fabrication of the nanopatterned germanium (Ge) surface is done by laser-induced etching. Atomic force microscopy is utilized here to study the surface and sizes of Ge nanoparticles. Raman and photoluminescence (PL) spectroscopy have been used to characterize their vibrational and light emission properties. Wavelength-dependent Raman investigations of these nanopatterned Ge surface reveal spatial distribution of sizes of nanoparticles. Nanopatterned Ge structures (etched for 60 min) emit a broad PL band having two maxima at 2.1 and 2.35 eV.