The electric field gradient and its temperature dependence for ruthenium in scandium and yttrium

The electric field gradients (EFG) for ruthenium in scandium and yttrium metal were determined by TDPAC measurements to be 19(4) × 10¹⁷ V/cm² and 5.5(12) × 10¹⁷ V/cm² respectively at room temperature. The EFG for Ru in Sc was found to vary considerably in the temperature range from 14 to 700 K, whereas for Ru in Y only an extremely small temperature dependence of the EFG was observed.     

Temperature dependence of the surface electric field gradient for indium metal

The electric field gradient at indium surfaces was studied with¹¹¹In PAC-probes as a function of temperature. The surface field gradient was determined to be temperature independent up to 100 K and the fraction of¹¹¹In surface sites shows a pronounced annealing behaviour between 150 K and 250 K.     

The temperature dependence of the electric field gradient in ruthenium metal

The electric field gradient in ruthenium metal was studied between 15 K and 863 K. In contradiction to a recently proposed theory [1] the EFG was found to decrease with increasing temperature.     

The effect of temperature and concentration on the electric field gradient in binary indium alloys

The concentration and temperature dependence of the quadrupole hyperfine interaction of¹¹¹Cd in InTl (hcp),InPb (fct),InTl (fct) andInCd (fct and fcc) alloys were studied using the perturbed angular correlation technique. The change in the observed quadrupole interaction frequency with concentration can be described by a linear dependence on the axial ratioc/a in all cases. In the alloys with identical crystal structures the strength of thec/a dependence is independent of the solute, in contrast to the strength of the concentration dependence. In all cases where no phase transition occurs, the change in the electric field gradient with temperature follows the empirical relationV _zz (T)=V _zz(0) · (1–B·T ^3/2), where the coefficientB depends on the lattice structure, on the solute-solvent combination and on the concentration. The phase transitions ofInCd alloys at 293 K could clearly be seen as discontinuities in the temperature curves. A similar series of discontinuities observed around 116 K suggests the existence of a cubic low temperature phase.     

The temperature and pressure dependence of the electric field gradient at tantalum in rhenium

The quadrupole interaction (QI) at substitutional Ta atoms in a Re matrix has been investigated by TDPAC between 1.2 K and 450 K. It was found to depend only weakly on temperature with a minium around 200 K. No change in the QI was observed when the sample was cooled into the superconducting state. The QI was found to increase with pressure with the coefficient (? lnq/?P)_T=+0.93(23)10^?3 kbar^?1 at 300 K. A discussion of the temperature and pressure variations in connection with published Mössbauer data reveals the role of the conduction electron contribution to the electric field gradient.     

Pressure and temperature dependence of the electric field gradient (EFG) in CdS

Using the time differential perturbed angular correlation technique (TDPAC), the electric hyperfine interaction of¹¹¹Cd in the II-VI-semiconductor CdS was investigated. The results of the temperature and pressure dependence of the electric field gradient (EFG) are discussed. The binding energyE _b for¹¹¹In at a Cd lattice site and a Cd vacancy (¹¹¹In_Cd–V_Cd–pair) could be estimated to 340 meV±80 meV by means of an Arrhenius-Plot. The disappearance of the 79 MHz and 73 MHz frequencies under a pressure of about 30 kbar could be due to their vacancy character or to the beginning of the phase transition to rocksalt structure.     

Charge carrier governed temperature dependence of the electric field gradient for111Cd in tellurium

Using the TDPAC-method with the proble nucleus¹¹¹Cd the electric quadrupole interaction (QI) in the trigonal semiconductor Te has been investigated in the temperature range 77 KT655 K. In contrast to most metals the quadrupole frequencyv _Q increases with increasing temperature. This is a consequence of the fact that in metals the charge carrier density is temperature independent, whereas in semiconductors it strongly increases with temperature. A comparison between the temperature variation of the quadrupole coupling constantv _Q and that of the charge carrier density leads to the conclusion that the QI in Te is governed by changes in the free electron density.     

Nuclear spin lattice relaxation and electric field gradient in liquid indium

We have measured the nuclear spin lattice relaxation time in liquid indium from 130°C to 300°C to be: 1/T ₁=(1.98 × 0.0082T) × 10³ sec^-1. The relaxation rate consists of two significant parts: (1/T ₁) _K from the nuclear magnetic hyperfine interaction, and (1/T ₁) _Q from the nuclear quadrupole interaction. We calculate (1/T ₁) _K from the the modified Korringa relation using a correction factor of order unity for electron-electron interactions. The hyperfine term is linear in T and accounts for the second term in 1/T ₁. Within experimental error the remaining rate, (1/T ₁) _Q , is temperature independent, and theoretically varies as the product of the square of the electric field gradient, q, and τ_c, a typical time between field gradient fluctuations. Making use of the x-ray RDF, we construct a simple model for liquid indium and calculate the ionic and electronic contributions, q _I and q _E, to the electric field gradient, to be q _I=1.4 × 10²⁴/cm³ and q _E=8.5 × 10²⁴/cm³. The calculation of q _E assumes covalent bonding between nearest neighbours. Taking q _I and q _E to be of opposite sign, we find that the correlation time τ_c is 1.6 × 10^-13 sec. When we further identify τ _c with the correlation time for diffusion in a three-dimensional random walk, we are able to calculate the r.m.s. jump distance, Δr _D, involved in self-diffusion, Δr _D=0.38 Å. This value is consistent with the x-ray peak width of 0.38 Å which we used earlier to calculate the electric field gradient.     

Temperature dependence of electric field gradient in TbCoO3

The temperature dependence of the electric field gradient (efg) in TbCoO₃ perovskite was measured by perturbed angular correlation (PAC) technique using ¹¹¹Cd and¹⁸¹Ta nuclear probes. The radioactive parent nuclei ¹¹¹In and ¹⁸¹Hf were introduced into the compound through a chemical process during sample preparation. The electric quadrupole interactions at ¹¹¹Cd show two different sites, assigned to probe substituting Tb and Co atoms. The temperature dependence of quadrupole frequencies show sharp discontinuities which have been interpreted as thermally activated spin state transitions from low-spin ground state configuration to the intermediate-spin state and from intermediate-spin to high-spin state of Co^3?+? ion. For ¹⁸¹Ta only one interaction was observed, which was assigned to probe at Co site. Indication of a Jahn–Teller distortion, which stabilizes the intermediate-spin state with orbital ordering, is also pointed out. No magnetic order was observed till 77 K.     

Grain size dependence of the electric field gradient

Precise measurements of the electric field gradient (EFG) with the perturbed angular correlation method (PAC) in Cd and Zn show significant differences between single-crystalline and poly-crystalline samples. These differences (up to four percent at low temperatures) decrease with increasing temperature and vanish at about 2 60 K. In all samples the lowest EFG values are obtained for single crystals. In poly-crystalline samples the EFG as well as the width of the EFG distribution increase with decreasing grain size. This effect is also observed in semiconducting ZnO.This work was supported financially by the Bundesministerium für Forschung und Technologie.     

Temperature dependence of the electric field gradient for111Cd in antimony

For the temperature dependence of the electric field gradient of¹¹¹Cd in the semimetal antimony the well knownT ^3/2 relationship is valid over a wide temperature range. The slope parameterB differs from that for^{121, 123}Sb in antimony by a factor of about 2.3.     

Probe atom dependence of the electric field gradient in bismuth

The electric field gradient of T1 in Bi has been determined with the PAD method. The observed value follows the general trend of sp-probe atoms in the group V semimetals in accordance with a covalent bond picture.     

Temperature dependence of the electric field gradient in Er metal

The method of perturbed angular distributions was used to measure the temperature dependence of the electric field gradient in Er single crystal for 98 KT156 K. The I=11^– isomer in Er¹⁵⁴) was used as a probe. ₀ increases monotonically for 98 KT259 K and then decreases. A possible cause for this effect may be short range interactions between the f electrons above the Neel point.Visitor from the Weizmann Institute, Rehovoth, Israel.     

Influence of impurity atoms on the temperature dependence of the electric field gradient in nontransition metals

The temperature dependence of the quadrupole coupling constants of¹¹¹CdIn,¹¹¹CdSn, and¹²⁰SbSn was measured by means of the perturbed angular correlation (distribution) technique. The results are discussed within a generalized model for the electric field gradient in nontransition metals.This work was supported by the Bundesministerium für Forschung und Technologie.     

Angular dependence of the Knight shift, electric field gradient, and spin-lattice relaxation time of 9Be NMR in beryllium metal

Angular dependences of ⁹Be NMR (±1/2) and (±1/2 ? ±3/20 transition frequencies are measured in a single-crystal beryllium metal plate in a field of 7.04T. The isotropic K _iso and anisotropic K _aniso components of the Knight shift are determined. The measured values of K _iso and T ₁ are considered in terms of the contact, polarization, and orbital contributions.