The characteristics of high current amorphous silicon diodes

Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm⁻² with rectification ratios of 10⁴–10⁵ were obtained withn ⁺−ν−p ⁺ structures. The diode quality factor has also been investigated, both in the dark and under illumination.     

Diffusion and surface energy barrier for labile oxygen in YBa2Cu3O7−δ

A study is made of the isotope exchange kinetics of tracer oxygen atoms between the gas phase and the CuO_1−δ plane in the YBa₂Cu₃O_7−δ crystal under isochronous and isothermal annealing. The parameters of the surface energy barrier for oxygen atoms are found. Fiz. Tverd. Tela (St. Petersburg) 39, 42–48 (January 1997)     

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

The electroluminescent characteristics of an InGaAsSb/GaAlAsSb heterostructure LED emitting at 1.85 μm are studied in the temperature range 20–200°C. It is shown that the emission power exponentially drops as P ≅ 0.4exp(2.05 × 10³/T) with a rise in temperature primarily because of an increase in the Auger recombination rate. It is found that band-to-band radiative recombination goes in parallel with recombination through acceptor levels, the latter causing the emission spectrum to broaden. With a rise in temperature, the activation energy of the acceptor levels decreases by the law ΔE≅ 32.9 − 0.075T and the maximum of the LED’s emission spectrum shifts toward the long-wavelength range (hν _max = 0.693 − 4.497 × 10⁻⁴ T). Based on the dependence E _g = hν _max − 0.5kT and experimental data, an expression is derived for the temperature variation of the bandgap in the In_0.055Ga_0.945AsSb active area, E _g ≅ 0.817 − 4.951 × 10⁻⁴ T, in the range 290 K < T < 495 K. The resistance of the heterostructure decreases exponentially with rising temperature as R ₀ ≅ 5.52 × 10⁻²exp(0.672/2kT), while cutoff voltage U _cut characterizing the barrier height of a p−n junction decreases linearly with increasing temperature (U _cut = −1.59T + 534). It is found that the current through the heterostructure is due to the generation-recombination mechanism throughout the temperature interval.     

Compositional effect of bcc Co100−x Fe x electrodes on magnetoresistance in AlO x -based magnetic tunnel junctions

The effect of the composition of ferromagnetic bcc Co_100−x Fe _x electrodes on tunneling magnetoresistance (TMR) of Co_100−x Fe _x /AlO _x /Co_100−x Fe _x /IrMn magnetic tunnel junctions was studied. The epitaxial growth of the bottom Co_100−x Fe _x electrode leads to a high-quality electrode and interface, which significantly enhances the TMR ratio and the desired effect for study. Other factors that could also affect TMR, such as interface roughness, tunneling barrier properties, and exchange-bias properties, were kept the same within the uncertainty of the experiment in order to minimize their effects. The observed TMR dependence on composition is attributed to the variation of the s-like electron densities of state of the bcc Co_100−x Fe _x electrodes with different compositions.     

Physical basis for the negative resistance in double heterostructure injection lasers

The previously observed negative resistance in double heterostructure diodes is shown to be caused by a trap generated potential barrier near the heterojunctionnGa_1-x Al _x As−pGaAs. The filling and emplying times were measured by observing the breakdown of the barrier with single and double pulses. Time resolved spectral measurements confirm the model.     

Equilibration of a cone: KMC simulation results

We study the equilibration of an initial surface of conic shape that consists of concentric circular monolayers by Kinetic Monte Carlo (KMC) method. The kinetic processes of attachment and/or detachment of particles to/from steps, diffusion of particles on the surface, along a step or cluster edges are considered. The difference between an up hill and down hill motion of a particle at a step are taken into account through the Ehrlich-Schwoebel (ES) barrier. The height of the cone evolves as h(0) − h(t) ~ t ^1/α where h(0) is the initial height of the surface and α is approximately 2. The ES barrier slows down the equilibration of the surface but the time dependence remains as given above. The exponent α depends neither on ES barrier nor on the temperature. The equilibration is found also to be independent of energy barrier to the motion of particles along the step edges. The number of particles in each layer except the top two circular layers is found to decrease as t ^0.57.     

Bosonic string theories with new boundary conditions

We show that the classical Nambu-Goto string inD dimensions admits Poincaré invariance ind dimensions (d⩽D) if (i)d − 2 of the transverse co-ordinatesx ⁱ are periodic and the rest quasi-periodic involving a real orthogonal matrix with (D − d) (D − d − 1)/2 free parameters, or if (ii)d − 2 ofx ⁱ obey Neumann and the rest obey a boundary condition involvingN free parameters, whereN=(D − d)²/2 ifD − d is even, andN=[(D − d)² − 1]/2 ifD − d is odd.     

Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga<Subscript>1−<Emphasis Type="Italic">y</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>As barrier structures containing quantum wells

The mobility of electrons in vertical transport in GaAs/Ga_1−y Al _y As barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga_1−y Al _y As (0 ≤ y ≤ 0:26) linearly graded barriers between the n⁺-GaAs contacts and the Ga_0:74Al_0:26As central barrier, which contain N _w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N _w =0 and 2, whereas ionized impurity scattering is dominant in the samples with N _w =4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N _w =4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.      

Transient crossing of phantom divide line w Λ = − 1 under Gauss–Bonnet interaction

Smooth double crossing of the phantom barrier w _Λ = − 1 has been found possible in cosmological model with Gauss–Bonnet-scalar interaction, in the presence of background cold dark matter. Such crossing has been observed to be a sufficiently late time phenomena and independent of the sign of Gauss–Bonnet-scalar interaction. The luminosity distance versus redshift curve shows a perfect fit with the Λ CDM model up to z = 3.5.     

Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells

The infrared radiation from hot holes in In_xGa_1−x As/GaAs heterostructures with strained quantum wells during lateral transport is investigated experimentally. It is found that the infrared radiation intensities are nonmonotonic functions of the electric field. This behavior is due to the escape of hot holes from quantum wells in the GaAs barrier layers. A new mechanism for producing a population inversion in these structures is proposed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 7, 478–482 (10 October 1996)     

Formation and application of correlated states in nonstationary systems at low energies of interacting particles

We consider prerequisites and investigate some optimal methods for the formation of a correlated coherent state of interacting particles in nonstationary systems. We study the influence of the degree of particle correlation on the probability of their passage through the Coulomb barrier for the realization of nuclear reactions at low energies. For such processes, the tunneling probability and, accordingly, the probability of nuclear reactions can grow by many orders of magnitude (in particular, the barrier transparency increases from D _{r = 0} ≈ 10⁻⁴² for an uncorrelated state to D _{|r| = 0.98} ≈ 0.1 at a correlation coefficient |r| ≈ 0.98). The formation of a correlated particle state is considered in detail for different types of monotonic decrease in the frequency of a harmonic oscillator with the particle located in its parabolic field. For the first time, we have considered the peculiarities and investigated the efficiency of the creation of a correlated state under a periodic action on a harmonic oscillator. This method is shown to lead to rapid formation of a strongly correlated particle state that provides an almost complete clearing of the potential barrier even for a narrow range of oscillator frequency variations.     

Observational constraint on generalized Chaplygin gas model

We investigate observational constraints on the generalized Chaplygin gas (GCG) model as the unification of dark matter and dark energy from the latest observational data: the Union SNe Ia data, the observational Hubble data, the SDSS baryon acoustic peak and the five-year WMAP shift parameter. The result is obtained that the best-fit values of the GCG model parameters with their confidence level are A _s=0.73_−0.06^+0.06 (1σ) _−0.09^+0.09 (2σ), α=−0.09_−0.12^+0.15 (1σ) _−0.19^+0.26 (2σ). Furthermore, in this model, we can see that the evolution of equation of state (EOS) for dark energy is similar to quiessence, and its current best-fit value is w _0de=−0.96 with the 1σ confidence level −0.91≥w _0de≥−1.00.     

The emission spectrum of <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs diodes under uniaxial compression

New experimental data are presented on the effects of uniaxial compression of up to 4 kbar along the [110] and [1$ \bar 1 $ \bar 1 0] crystallographic directions on the spectra of electroluminescence and the current-voltage characteristics of diodes based on n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures that were designed for injection lasers. With increasing pressure, the spectra show a shift to shorter wavelengths, reaching 25 meV at 3 kbar; the intensity increases 2–3 times as well. Numerical calculations were carried out on the band structure of the investigated heterostructures under compression along the [110] axis, which indicate the increase in the effective band gap in the quantum well (QW) GaAs _y P_{1 − y} , with a pressure coefficient of about 8.5 meV/kbar and reduction of the barrier height at the boundaries of the QW. The calculations predict the possibility that light and heavy holes crossover at pressures above 4.5–5 kbar. The increase in the effective band gap completely describes the experimental data on the shift of the electroluminescence spectra. The mixing of light and heavy holes when approaching the band crosspoint is the probable cause of an increase in the intensity of radiation under uniaxial compression.     

Photoelectric properties and photoinduced changes in ann-GaAs-glass-metal structure

A study is made of the photoelectric properties of metal-insulator-semiconductor (MIS) structures ofn-GaAs with a V₂O₅−B₂O₃−CaO insulating layer before and after illumination with subthreshold radiation. It is suggested that these properties are formed on account of the combined action of the barrier photo-emf and the Dember photo-emf dominating at low and high frequencies. The changes discovered in the photoelectric and noise properties of the structures are explained by the occurrence of photoinduced transformations in the ensemble of semiconductor defects. This is confirmed by a metallographic investigation. It is noted that the characteristics of photoinduced changes in crystalline and amorphous systems have common features. State Academy of Control and Radioelectronic Systems, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 6–12, August, 1996.     

One Dimensional Behavior of Singular N Dimensional Solutions of Semilinear Heat Equations

We consider u(x,t) a solution of u _t =Δu+|u| ^{p − 1} u that blows up at time T, where u:ℝ ^N ×[0, T)→ℝ, p>1, (N−2)p<N+2 and either u(0)≥ 0 or (3N−4)p<3N+8. We are concerned with the behavior of the solution near a non isolated blow-up point, as T−t→ 0. Under a non-degeneracy condition and assuming that the blow-up set is locally continuous and N−1 dimensional, we escape logarithmic scales of the variable T−t and give a sharper expansion of the solution with the much smaller error term (T−t)^{1, 1/2−η} for any η>0. In particular, if in addition p>3, then the solution is very close to a superposition of one dimensional solutions as functions of the distance to the blow-up set. Finally, we prove that the mere hypothesis that the blow-up set is continuous implies that it is C ^{1, 1/2−η} for any η>0. Received: 20 June 2001 / Accepted: 6 October 2001     

Negative ion effects in CO2 convection laser discharges

Negative ions are computed to be formed on a time scale and in quantities such that they may be a cause of plasma instability observed in low pressure electrical discharge convection CO₂ lasers. In a typical CO₂−N₂−He−H₂O laser mixture the principal ions are CO ₃ ⁻ , CO ₄ ⁻ and H⁻ with the total negative ion densityn ₋ given by 0.1n _e <n ₋<n _e , wheren _e is the electron density: but if the gases are re-cycled or if there is an air leak NO ₂ ⁻ and NO ₃ ⁻ are formed in significant amounts andn ₋ can become greater thann _e in a time considerably less than the gas dwell time in the electrical excitation discharge. CO is effective in reducingn ₋ in a system without re-cycling, but is ineffective in a re-cycled system with the oxides of nitrogen present.     

Muon capture by16O—using a microscopic theory of particle-hole states

The partial capture rates for the process,μ ⁻ +¹⁶O (g·s) →¹⁶N (2⁻, 1⁻, 0⁻, 3⁻) +v _μ have been calculated using the particle-hole wavefunctions obtained using self-consistent procedure. In deriving these wavefunctions, the effectiveN-N interaction has been constructed from the bare Hamada-Johnston interaction. The terms in the muon capture Hamiltonian that depend on the momentum of the capturing proton have been included and their importance in 0⁺ → 0⁻ transition is exhibited. The agreement with the available experimental data is good. The need to incorporate meson exchange effects in 0⁺ → 0⁻ transition is pointed out.