Optically induced electron spin resonance in doped amorphous silicon

We report the first observations of optically induced electron spin resonance signals in doped and undoped amorphous silicon. We also report the observation of equilibrium surface or interface spin densities ～ 10¹³cm^?2 and volume spin densities ～ 6 × 10¹⁵ cm^?3. The small number of spins observed in equilibrium compared to the large optically induced spin density shows that most electrons are spin paired in equilibrium. We conclude that this implies a very small mean effective correlation energy, U ～ kT.     

Muon spin resonance — A variant of magnetic resonance

Spin polarized positive muons injected in matter serve as magnetic probes for the investigation of various properties. The evolution of muon spin polarization rests on the same basis as in conventional magnetic resonance techniques. The background of the technique, different variants of the experimental set-up, and potential and limitations of the muon as a probe are described.     

Muon spin rotation experiments on a silicon crystal doped with13C

A crystal of silicon doped with carbon enriched to 60.1% in¹³C was studied bySR to determine whether¹³C hyperfine structure could be observed in the frequency spectra of normal muonium, Mu, or anomalous muonium, Mu^*. Measurements at 100 G and 100 K with 40 million good events yielded extremely weak Mu^* signals and no Mu in these data or in measurements at 10 G and 150 K. Transmission electron micrographs of this sample contained small regions showing strain contrast and structure factor contrast. Annealing the sample at 900°C for 84 hours led to featureless electromicrographs. SubsequentSR measurements yielded a strong Mu^* signal but still no Mu. No broadening due to¹³C was observed.     

Muon spin relaxation in ferromagneticPdMn

Positive-muon ( ⁺) spin relaxation experiments have been carried out in the dilute ferromagnetic alloy Pd+2 at.% Mn (T _c=5.8 K). In the paramagnetic state the inhomogeneous ⁺ linewidth is proportional to the bulk magnetization. BelowT _c the ⁺ linewidth and the width of the ⁺ local field distribution in zero applied field are both in qualitative accord with the Sherrington-Kirkpatrick theory of disordered magnets.This work was performed under the auspices of the U.S. Department of Energy, and was supported by the U.S. National Science foundation, grant nos. DMR-7909223 and DMR-8115543, and by the Netherlands Stichting voor Fundamenteel Onderzoek der Materie (FOM).     

Muon spin rotation in superconductors

By means of the muon spin rotation technique (⁺SR), the temperature dependence of the magnetic field inside the normal-conducting domains of high-purity tantalum crystals in the intermediate state has been measured in the temperature range 2.36K+SR. Possible applications of these findings to the study of long-range diffusion of positive muons at low temperatures are indicated.     

Muon spin rotation (μSR) in a metal-cluster carbonyl compound

μSR spectra from a metal carbonyl compound are reproted for the first time. The metal cluster compound Cs₂[Os₁₀C(CO)₂₄] shows a temperature dependent signal for implanted muons with the onset of motional narrowing at ca. 200 K. Also observed is a probable change in the width within the temperature range 40–140 K. A tentative assignment is provided for the muon sites.     

Annealing behavior of spin density in UHV evaporated amorphous silicon

The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.     

Muon decay channeling in silicon

The angular distribution of positrons from muon decay in an oriented [111] Si wafer shows a symmetric pattern of six lines of minimum counting rate radiating from a central minimum. The pattern results from positron blocking by the (110) planes and [111) axis. The measurement technique and the dependence of the features on positron energy, muon implanation depth and sample temperature are discussed.     

Electron spin resonance in amorphous Si and Ge doped with Mn

ESR signal with hyperfine structure due to Mn and that due to dangling bonds are observed. From the magnitude of the hyperfine structure constant, Mn is considered to locate within voids without making a covalent bond with the host atom in the form of Mn²⁺. The intensity of the ESR signal due to dangling bonds decreases with the increase of that due to Mn, so it is likely that electrons are transfered from Mn to dangling bonds and their unpaired electrons are paired up.     

Muon state dynamics in germanium and silicon

We have carried out implanted positive muon studies on the molecular metal system d_n- (DMe-DCNQI)₂ Cu in order to understand better its novel magnetic properties. Examples of these salts at different levels of deuteration were studied. The fully deuterated ( d₈) salt shows a metal–insulator (MI) transition around 80 K and a magnetic transition around 7 K. The muon spin relaxation rate is enhanced below the MI transition, reflecting the localisation of spins along the Cu columns, however, the increase in muon spin relaxation rate occurs well above the metal–insulator (MI) transition and suggests a slowdown of the spin fluctuations around 120 K. At temperatures below 7 K a zero field precession signal was observed as a result of the 3D magnetic ordering of the Cu spins. For a muon site associated with the ring of the DCNQI molecule, the local field distribution was found to be consistent with the previously proposed magnetic structure. A sharp nuclear quadrupolar level crossing resonance (QLCR) was observed at 50 G which was assigned to resonance with the imine nitrogen on the DCNQI molecule. This revised version was published online in July 2006 with corrections to the Cover Date.     

Muon spin relaxation in spin gap state of BaVS3

Positive muon spin relaxation measurements were performed on a spin-1/2 system BaVS₃, which shows a metal-insulator transition at T_MI= 70 K. We found a marked muon-spin depolarization below T_X= 30 K without appreciable critical divergence. The possibility of muonium formation in the insulating state rather than electron spin freezing is discussed taking into account the quenching of V spins evidenced by ⁵¹V NMR and NQR measurements. This revised version was published online in August 2006 with corrections to the Cover Date.