Modeling equilibrium concentrations of Bjerrum and molecular point defects and their complexes in ice Ih

We present a model for the determination of the thermal equilibrium concentrations of Bjerrum defects, molecular point defects, and their aggregates in ice I(h). First, using a procedure which minimizes the free energy of an ice crystal with respect to the numbers of defect species, we derive a set of equations for the equilibrium concentrations of free Bjerrum and point defects, as well their complexes. Using density-functional-theory calculations, we then evaluate the binding energies of Bjerrum-defect/vacancy and Bjerrum-defect/interstitial complexes. In contrast to the complexes which involve the molecular vacancy, the results suggest that the molecular interstitial binds preferentially to the D-type Bjerrum defect. Using both theoretical binding and formation free energies as well as the available experimental data, we find that the preferential binding and the substantial presence of the interstitial as the predominant point defect in ice I(h) may lead to conditions in which the number of free D defects becomes considerably smaller than that of free L defects. Such a scenario could possibly be involved in the experimentally observed inactivity of D-type Bjerrum defects in the electrical properties of ice I(h).     

Theory of the dielectric constant of ice

The first result of this paper is to show that the Onsager—Slater theory of the dielectric constant is consistent for some reasoable model of ice in the limit of no intrinsic defects. Accordingly, a model is presented, called the unit model, which has unit cells with no dipole moments for which the Onsager—Slater theory is exact. The second result of this paper is to show that the unit model is physically and chemically realistic. Bjerrum defects are introduced into the model and the relation between the dielectric constant and the Bjerrum defect charge found by Onsager and Dupuis for a less realistic model continues to hold and is satisfied by the experimental values. In a simple point charge approximation the charge distribution determined by the model requirements and the experimentally determined Bjerrum fault charge are found and seem reasonble. Higher order multipole interaction energies are consistent with eviations from pure 1/T dependence of the dielectric constant of real ice with intrinsic defects, can be derived in the context of the unit model. This formula interpolates between the Onsager—Slater formula in the limit of no intrinsic defects and the Kirkwood—Frohlich formula in the limit of many intrinsic defects. For the concentration of defects in real ice the interpolation formula is practically the same as the Onsager—Slater formula and differs from the Kirkwood—Frohlich formula by a factor of nearly $\text{3}\text{2}$.     

Structural and dynamic properties of oxygen vacancies in perovskite oxides--analysis of defect chemistry by modern multi-frequency and pulsed EPR techniques

Multi-frequency and pulsed electron paramagnetic resonance (EPR) provides a sensitive spectroscopic tool to elucidate the defect structure of transition-metal doped perovskite oxides, as well as to monitor dynamic processes of oxygen vacancies in these materials. In this regard, high-frequency EPR spectrometers and pulsed EPR techniques such as the hyperfine sublevel correlation experiment (HYSCORE) may now routinely be used for dedicated investigations, providing considerably more insight than the application of standard continuous-wave EPR. Recent results include the formation of defect complexes between acceptor-type transition-metal centers with either one or two oxygen vacancies for the reason of charge compensation. Furthermore, such defect complexes follow the domain switching upon poling ferroelectric compounds with correspondingly high electric fields. On the other hand, multi-valent manganese functional centers provide trapping centers for electronic and ionic charge carriers (e', ) such that valency altered acceptor states or defect complexes are formed. Additionally, the trapping of charge carriers at the intrinsic 'reduced' B-site ions, and , can be observed by means of EPR spectroscopy.     

Ab initio cluster calculations on the electronic structure of oxygen vacancies at the polar ZnO(0001) surface and on the adsorption of H2, CO, and CO2 at these sites

Oxygen vacancies at the polar O terminated (0001) surface of ZnO are of particular interest, because they are discussed as active sites in the methanol synthesis. In general, the polar ZnO surfaces are stabilized by OH groups, therefore O vacancies can be generated by removing either O atoms or OH or H2O groups from the surface. These defects differ in the number of electrons in the vacancy and the number of OH groups in the neighborhood. In the present study, the electronic structure and the adsorption properties of four different types of oxygen vacancies have been investigated by means of embedded cluster calculations. We performed ab initio calculations on F+ like surface excitations for the different defect types and found that the transition energies are above the optical band-gap, while F+ centers in bulk ZnO show a characteristic optical excitation at 3.19 eV. Furthermore, we studied the adsorption of CO2 and CO at the different defect sites by DFT calculations. We found that CO2 dissociates at electron rich vacancies into CO and an O atom which remains in the vacancy. At the OH vacancy which contains an unpaired electron CO2 adsorbed in the form of CO2-, while it adsorbed as a linear neutral molecule at the H2O defect. CO adsorbed preferentially at the H2O defect and the OH defect, both with a binding energy of 0.3 eV.     

结合第一性原理和热力学计算对HfO2晶体本征点缺陷的预测

基于第一性原理和热动力学方法模拟计算得到了不同温度和氧分压下HfO₂晶体本征点缺陷的形成能,并讨论了各种点缺陷的形成能随费米能级变化的规律. 结果表明: 当费米能级在价带顶附近时, 随着温度和氧分压的变化, 出现了不同的最稳定点缺陷(O_i⁰、V_O3²⁺和Hf_i⁴⁺). 当费米能级大于3.40 eV时, 主要点缺陷是带-4价的Hf 空位. 该晶体除Hf 空位在价带顶附近出现了奇数价态, 其它的点缺陷都只显现偶数价态, 这表明该晶体的点缺陷具有典型的negative-U特性. 本文还计算得到了该晶体可能存在的最稳定点缺陷在温度、氧分压和费米能级三维空间的分布, 这为分析该晶体在不同条件下可能出现的点缺陷类型提供清晰的图像, 为调控晶体点缺陷的形成提供参考.     

Tight-binding molecular dynamics study of the role of defects on carbon nanotube moduli and failure

We performed tight-binding molecular dynamics on single-walled carbon nanotubes with and without a variety of defects to study their effect on the nanotube modulus and failure through bond rupture. For a pristine (5,5) nanotube, Young's modulus was calculated to be approximately 1.1 TPa, and brittle rupture occurred at a strain of 17% under quasistatic loading. The predicted modulus is consistent with values from experimentally derived thermal vibration and pull test measurements. The defects studied consist of moving or removing one or two carbon atoms, and correspond to a 1.4% defect density. The occurrence of a Stone-Wales defect does not significantly affect Young's modulus, but failure occurs at 15% strain. The occurrence of a pair of separated vacancy defects lowers Young's modulus by approximately 160 GPa and the critical or rupture strain to 13%. These defects apparently act independently, since one of these defects alone was independently determined to lower Young's modulus by approximately 90 GPa, also with a critical strain of 13%. When the pair of vacancy defects adjacent, however, Young's modulus is lowered by only approximately 100 GPa, but with a lower critical strain of 11%. In all cases, there is noticeable strain softening, for instance, leading to an approximately 250 GPa drop in the apparent secant modulus at 10% strain. When a chiral (10,5) nanotube with a vacancy defect was subjected to tensile strain, failure occurred through a continuous spiral-tearing mechanism that maintained a high level of stress (2.5 GPa) even as the nanotube unraveled. Since the statistical likelihood of defects occurring near each other increases with nanotube length, these studies may have important implications for interpreting the experimental distribution of moduli and critical strains.     

Defect processes in MgAl2O4 spinel

In perfect normal MgAl₂O₄ spinel the Mg²⁺ ions occupy tetrahedral 8a sites and Al³⁺ ions occupy octahedral 16d sites. In reality some cations are exchanged between the cation sublattices forming pairs of antisite defects and thus a degree of “inversion”. Here atomic simulation is used to investigate the influence that antisite defects have on the populations of other intrinsic defects, those associated with Schottky and Frenkel reactions. One consequence is that the total magnesium interstitial concentration is increased substantially over the aluminium interstitial concentration and the magnesium vacancy concentration is increased over the aluminium vacancy concentration but to a much smaller extent. The split structures of isolated interstitial defects and the stability of various defect clusters are also discussed.     

Lattice Relaxation Effect on the Electronic Structure of Helium Solutions in Calcium Fluoride Crystals

The discrete variation (DV) and molecular static methods are used to study the effects of atomic displacements near the anion vacancies and He impurity centers in the interstitial and vacancy positions on the electronic structure of CaF₂. Lattice ion displacements near the helium atom were estimated at 1% lattice constant in the former case and 4% in the latter. This leads to decreased splitting between the occupied and vacant impurity levels in the presence of isolated defects and to increased splitting for interacting defects. Effective charges are less sensitive to lattice relaxation than the electronic energy spectrum, except the case of high defect concentration.     

On the mechanisms of ionic conductivity in BaLiF3: a molecular dynamics study

The mechanisms of ionic conductivity in BaLiF(3) are investigated using molecular simulations. Direct molecular dynamics simulations of (quasi) single crystalline super cell models hint at the preferred mobility mechanism which is based on fluoride interstitial (and to a smaller extent F(-) vacancy) migration. Analogous to previous modeling studies, the energy related to Frenkel defect formation in the ideal BaLiF(3) crystal was found as 4-5 eV which is in serious controversy to the experimentally observed activation barrier to ionic conductivity of only 1 eV. However, this controversy could be resolved by incorporating Ba(2+)? Li(+) exchange defects into the elsewise single crystalline model systems. Indeed, in the neighborhood of such cation exchange defects the F(-) Frenkel defect formation energy was identified to reduce to 1.3 eV whilst the cation exchange defect itself is related to a formation energy of 1.0 eV. Thus, our simulations hint at the importance of multiple defect scenarios for the ionic conductivity in BaLiF(3).     

Ozonization at the vacancy defect site of the single-walled carbon nanotube

The ozonization at the vacancy defect site of the single-walled carbon nanotube has been studied by static quantum mechanics and atom-centered density matrix propagation based ab initio molecular dynamics within a two-layered ONIOM approach. Among five different reaction pathways at the vacancy defect, the reaction involving the unsaturated active carbon atom is the most probable pathway, where ozone undergoes fast dissociation at the active carbon atom at 300 K. Complementary to the experiments, our work provides a microscopic understanding of the ozonization at the vacancy defect site of the single-walled carbon nanotube.     

Surface Charge‐Transfer Doping of Graphene Nanoflakes Containing Double‐Vacancy (5‐8‐5) and Stone–Wales (55‐77) Defects through Molecular Adsorption

The adsorption of six electron donor–acceptor (D/A) organic molecules on various sizes of graphene nanoflakes (GNFs) containing two common defects, double‐vacancy (5‐8‐5) and Stone–Wales (55‐77), are investigated by means of ab initio DFT [M06‐2X(‐D3)/cc‐pVDZ]. Different D/A molecules adsorb on a defect graphene (DG) surface with binding energies (ΔE_b) of about ?12 to ?28 kcal mol^?1. The ΔE_b values for adsorption of molecules on the Stone–Wales GNF surface are higher than those on the double vacancy GNF surface. Moreover, binding energies increase by about 10 % with an increase in surface size. The nature of cooperative weak interactions is analyzed based on quantum theory of atoms in molecules, noncovalent interactions plot, and natural bond order analyses, and the dominant interaction is compared for different molecules. Electron density population analysis is used to explain the n‐ and p‐type character of defect graphene nanoflakes (DGNFs) and also the change in electronic properties and reactivity parameters of DGNFs upon adsorption of different molecules and with increasing DGNF size. Results indicate that the HOMO–LUMO energy gap (E_g) of DGNFs decreases upon adsorption of molecules. However, by increasing the size of DGNFs, the E_g and chemical hardness of all complexes decrease and the electrophilicity index increases. Furthermore, the values of the chemical potential of acceptor–DGNF complexes decrease with increasing size, whereas those of donor–DGNF complexes increase.     

Cluster and periodic DFT calculations of MgO/Pd(CO) and MgO/Pd(CO)(2) surface complexes

The bonding and vibrational properties of Pd(CO) and Pd(CO)(2) complexes formed at the (100) surface of MgO have been investigated using the gradient-corrected DFT approach and have been compared to the results of infrared and thermal desorption experiments performed on ultrathin MgO films. Two complementary approaches have been used for the calculation of the electronic properties: the embedded cluster method using localized atomic orbital basis sets and supercell periodic calculations using plane waves. The results show that the two methods provide very similar answers, provided that sufficiently large supercells are used. Various regular and defect adsorption sites for the Pd(CO) and Pd(CO)(2) have been considered: terraces, steps, neutral and charged oxygen vacancies (F and F(+) centers), and divacancies. From the comparison of the computed and experimental results, it is concluded that the most likely site where the Pd atoms are stabilized and where carbonyl complexes are formed are the F(+) centers, paramagnetic defects consisting of a single electron trapped in an anion vacancy.     

Structure and dynamics of orientational defects in ice I

Orientational defects in hexagonal ice were investigated using molecular dynamics simulations. Energy relaxation during L- and D-defect migration was shown to be associated with improved alignment of water molecules along the local electric fields. Two new forms of defects, an "L+D complex," and a "5+7 defect," were characterized. These forms appear in ice trajectories close to the melting point, and in the course of L- and D-pair recombination process. Defect pair recombination was shown to be a complex process, involving collective H-bond changes in groups of molecules.     

Thermal expansion and impurity effects on lattice thermal conductivity of solid argon

Thermal expansion and impurity effects on the lattice thermal conductivity of solid argon have been investigated with equilibrium molecular dynamics simulation. Thermal conductivity is simulated over the temperature range of 20-80 K. Thermal expansion effects, which strongly reduce thermal conductivity, are incorporated into the simulations using experimentally measured lattice constants of solid argon at different temperatures. It is found that the experimentally measured deviations from a T(-1) high-temperature dependence in thermal conductivity can be quantitatively attributed to thermal expansion effects. Phonon scattering on defects also contributes to the deviations. Comparison of simulation results on argon lattices with vacancy and impurity defects to those predicted from the theoretical models of Klemens and Ashegi et al. demonstrates that phonon scattering on impurities due to lattice strain is stronger than that due to differences in mass between the defect and the surrounding matrix. In addition, the results indicate the utility of molecular dynamics simulation for determining parameters in theoretical impurity scattering models under a wide range of conditions. It is also confirmed from the simulation results that thermal conductivity is not sensitive to the impurity concentration at high temperatures.     

Vacancy‐Induced Electronic Structure Variation of Acceptors and Correlation with Proton Conduction in Perovskite Oxides

In most proton‐conducing perovskite oxides, the electrostatic attraction between negatively charged acceptor dopants and protonic defects having a positive charge is known to be a major cause of retardation of proton conduction, a phenomenon that is generally referred to as proton trapping. We experimentally show that proton trapping can be suppressed by clustering of positively charged oxygen vacancies to acceptors in BaZrO_3?δ and BaCeO_3?δ. In particular, to ensure the vacancy–acceptor association is effective against proton trapping, the valence electron density of acceptors should not significantly vary when the oxygen vacancies cluster, based on the weak hybridization between the valence d or p orbitals of acceptors and the 2p orbitals of oxygen.     

Density Functional Theory Study of the Point Defects on KDP (100) and (101) Surfaces

Surface defects are usually associated with the formation of other forms of expansion defects in crystals, which have an impact on the crystals’ growth quality and optical properties. Thereby, the structure, stability, and electronic structure of the hydrogen and oxygen vacancy defects (V_H and V_O) on the (100) and (101) growth surfaces of KDP crystals were studied by using density functional theory. The effects of acidic and alkaline environments on the structure and properties of surface defects were also discussed. It has been found that the considered vacancy defects have different properties on the (100) and (101) surfaces, especially those that have been reported in the bulk KDP crystals. The (100) surface has a strong tolerance for surface V_H and V_O defects, while the V_O defect causes a large lattice relaxation on the (101) surface and introduces a deep defect level in the band gap, which damages the optical properties of KDP crystals. In addition, the results show that the acidic environment is conducive to the repair of the V_H defects on the surface and can eliminate the defect states introduced by the surface V_O defects, which is conducive to improving the quality of the crystal surface and reducing the defect density. Our study opens up a new way to understand the structure and properties of surface defects in KDP crystals, which are different from the bulk phase, and also provides a theoretical basis for experimentally regulating the surface defects in KDP crystals through an acidic environment.     

An ab initio study of structural properties and single vacancy defects in Wurtzite AlN

The cell parameters, bulk moduli and electronic densities-of-states (DOS) of pure and vacancy defect AlN were computed using generalized-gradient approximation (GGA) and hybrid functional (B3LYP) computational methods within both plane wave-pseudopotential and localized Gaussian basis set approaches. All of the methods studied yielded cell parameters and bulk moduli in reasonable agreement with experiment. The B3LYP functional was also found to predict an optical band gap in excellent agreement with experiment. These methods were subsequently applied to the calculation of the geometry, defect state positions and formation energies of the cation (V(Al)) and anion (V(N)) single vacancy defects. For the V(Al) defect, the plane wave-pseudopotential predicted a significant retraction of the neighboring N away from the vacancy, while for the V(N) defect, only slight relaxations of the surrounding Al atoms towards the vacancy were predicted. For the computed DOS of both vacancy defects, the GGA methods yielded similar features and defect level positions relative to the valence band maximum, while the B3LYP method predicted higher separations between the defect levels and the valence and conduction bands, leading to higher energy occupied defect levels.     

Boron atoms in the subsurface layers of diamond: Quantum chemical modeling

Results from quantum-chemical modeling of the configurations of boron impurities and BV complexes of “boron + monovacancy” on diamond surface C(100)–(2 × 1) are presented with their positions varied in subsurface layers. The geometric, electronic, and energy characteristics of these configurations are calculated. It is shown that the most stable BV complexes are complex defects consisting of an impurity defect in the fourth layer and an intrinsic defect in the third layer. The bonding energy of a hydrogen atom and a surface containing the most stable of the studied defects is estimated.     

Effects of Intrinsic Pentagon Defects on Electrochemical Reactivity of Carbon Nanomaterials

Theoretical calculations reveal that intrinsic pentagons in the basal plane can contribute to the local electronic redistribution and the contraction of band gap, making the carbon matrix possess superior binding affinity and electrochemical reactivity. To experimentally verify this, a pentagon‐defect‐rich carbon nanomaterial was constructed by means of in situ etching of fullerene molecules (C₆₀). The electrochemical tests show that, relative to hexagons, such a carbon‐based material with abundant intrinsic pentagon defects makes much greater contribution to the electrocatalytic oxygen reduction activity and electric double layer capacitance. It shows a four‐electron‐reaction mechanism similar to commercial Pt/C and other transition‐metal‐based catalysts, and a higher specific capacitance than many reported metal‐free carbon materials. These results show the influence of intrinsic pentagon defects for developing carbon‐based nanomaterials toward energy conversion and storage devices.