The effect of oxygen rf discharge on pulsed laser deposition of oxide films

In this work final results on TiO₂ film deposition by Plasma Assisted Pulsed Laser Deposition (PAPLD) with an rf biased substrate are presented. In previous work it has been shown that PAPLD is an improvement over conventional PLD for the elimination of particulates in high refractive index thin film deposition. This paper will give a comparison between conventional PLD and PAPLD on the stoichiometry, morphology, and optical properties of deposited TiO₂ films. It will be demonstrated that oxygen rf discharge during the PLD process makes incorporation of oxygen into the depositing films extremely effective. This effect of the rf discharge allows operation of the PLD process at a lower oxygen background pressure while enhancing the deposition rate. Also, the production of a good quality TiO₂ film by PAPLD using a pure metal titanium target will be shown. PACS 79.20.Ds; 52.80.Pi     

Suppression of particle generation in a plasma process using a sine-wave modulated rf plasma

Sine-wave modulated rf plasma has been used to control particle generation and growth in a plasma-enhanced chemical vapor deposition of silicon dioxide thin films using TEOS/O₂. The density and the size of particles generated in the plasma are greatly reduced when the plasma is modulated with sine-wave modulation at low modulation frequency (<1000 Hz). In addition, particle contamination on the films is significantly reduced also for nanoparticles, and the film growth rates at the range of modulation frequencies where particle generation are greatly reduced do not decrease appreciably. Compared to its counterpart pulse-wave modulation plasma, the sine-wave modulation plasma has demonstrated a better performance in terms of reduction of particle generation and film contamination, and of film growth rate. Thus, the sine-wave modulation plasma has shown as a promising method to be applied in the production of thin film with a high deposition rate and a low particle contamination.     

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用射频等离子体增强非平衡磁控溅射在Si100基底上沉积了金属Cu膜。研究了偏压,射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌,结构和成分。结果表明,射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成;沉积参数对沉积膜的性能有重要的影响。     

Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm² in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm²) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm²), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm²), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993     

On the Causes and Effects of Contaminations during rf Diode Deposition of Cr-Si Alloys

Investigations to the causes and effects of contaminants at the rf diode deposition of CrSi films in a non-heated high vacuum apparatus were carried out comparing an oxygen-free fusion target with an oxygen-containing cermet target. The films of the fusion target contained considerable amounts of oxygen; analogously the oxygen concentration in the films was increased in the case of the cermet target. Moreover, hydrogen was found. The concentration of the contaminants decreased with the sputtering power, however the rate of incorporation increased. For high sputtering rates the contamination process was reproducible and independent of the plant conditioning; the deposited films were depth-homogeneous. The reasons for this behaviour lie in water sources which are activated first of all by the discharge itself. The electrical properties found are explained by the contaminants and the deposition conditions.     

Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C--O--C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C--O--C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.     

Optical,electrical, structural and microstructural characteristics of rf sputtered ITO films developed for art protection coatings

Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by rf sputtering in an Ar and Ar+O₂ gas mixture, both with and without additional substrate heating. The influence of both deposition conditions and post-annealing treatment on optical, electrical, structural and microstructural properties of the ITO films has been investigated. The optical constants have been calculated in the range 320–2500 nm using a combination of several theoretical models. A schematic diagram for the film properties change versus composition has been proposed in terms of a generalized parameter characterising the energy efficiency of the film formation. The deposition conditions and the optical and electrical properties of the films have been optimized with respect to the requirements for their application in art protection coatings. PACS 78.66-w; 68.55.Jk; 81.15.Cd; 81.40-z     

Spatial distribution of electron characteristic in argon rf glow discharges

The spatial distributions of the electron density and the mean electron energy of argon radio frequency (rf) glow discharge plasma in a plasma-enhanced chemical vapour deposition (PECVD) system have been investigated using an established movable Langmuir probe. The results indicate that in the axial direction the electron density tends to peak at midway between the two electrodes while the axial variation trend of mean electron energy is different from that of the electron density, the mean electron energy is high near the electrodes. And the mean electron energy near the cathode is much higher than that near the anode. This article focuses on the radial distribution of electron density and mean electron energy. A proposed theoretical model distribution agrees well with the experimental one: the electron density and the mean electron energy both increase from the centre of the glow to the edge of electrodes. This is useful for better understanding the discharge mechanism and searching for a better deposition condition to improve thin film quality.     

溅射工艺参数对硅薄膜微结构影响的Raman分析

为了解决碳化硅难以进行光学加工的问题,该文采用射频磁控溅射方法,在碳化硅反射镜坯体上沉积与碳化硅具有相近热膨胀系数且易于进行光学加工的硅薄膜。利用拉曼光谱(Raman)对衬底温度、射频功率、衬底偏压等溅射工艺条件对硅膜微结构的影响进行了分析。研究发现：随着衬底温度的升高,薄膜的晶化率先增大后减小;衬底偏压的增加不利于薄膜有序结构的形成;射频功率对薄膜微结构的影响比较复杂,随着功率的升高,薄膜晶粒尺寸减小,晶化率降低,当射频功率进一步升高时,薄膜中有序团簇尺寸和晶化率逐渐升高。但过高的射频功率反而不利于薄膜的晶化。     

Photoenhanced deposition of silicon oxide thin films using a novel windowless internal nitrogen discharge lamp

This paper reviews the production of silicon oxide thin films using a novel photoenhanced deposition technique incorporating a windowless nitrogen discharge lamp contained within the deposition vessel. This process has the potential to produce better semiconductor/insulator interfaces than those produced using conventional RF glow discharge techniques, since there is no damage to the growing film surface from energetic ions produced in the glow discharge plasma. The use of an internal lamp obviates the need for a window between the lamp and reaction chamber and thus overcomes the problems of attenuation of short wavelength ultraviolet radiation by the window. All the ultraviolet output of the lamp can now directly couple into the reaction gases, so the need for sensitising agents is also removed. Thin films of silicon oxide have been deposited onto single crystal silicon wafers from nitrous oxide-silane gas mixtures. The physical properties are comparable to those of high quality insulator films deposited by plasma enhanced techniques. The results of electrical measurements indicate that this material is of sufficiently high quality to be used as a low temperature deposited gate dielectric for thin film devices. To confirm this, thin film transistors (TFTs) have been fabricated using the material (and an active layer of amorphous silicon deposited in the same system) and characteristics of these TFTs are also presented.     

Capacitance humidity sensor with carbon nitride detecting element

The humidity sensitive properties of carbon nitride (CN_x) films deposited by two methods, inductively coupled plasma chemical vapour deposition utilizing transport reactions and pulsed laser deposition combined with an rf discharge, have been investigated. For this purpose capacitance humidity sensors with a CN_x detecting element have been fabricated and tested. Fast and significant responses toward moisture are registered by the changes of the electrical parameters. The CN_x films sensing mechanism has been discussed. The results obtained show unambiguously that CN_x films appear to be a promising candidate as a humidity sensitive element in up-to-date electronic noses. Received: 6 December 1999 / Accepted: 7 January 2000 / Published online: 24 March 2000     

Ion bombardment of amorphous silicon films during plasma-enhanced chemical vapor deposition in an rf discharge

The characteristics of ion and electron fluxes to the surface of a growing silicon film are investigated in various rf discharge regimes in silane at frequencies of 13.56 MHz and 58 MHz in plasma-enhanced chemical vapor-deposition (PECVD) apparatus. The energy spectra of the ions and electrons bombarding the growing film are measured. The electronic properties of films grown under various degrees of ion bombardment are studied. The correlation of these properties with the ion parameters in the rf discharge plasma during film growth is discussed. Zh. Tekh. Fiz. 68, 52–59 (February 1998)     

The approach to diamond growth on levitating seed particles

We demonstrate the approach of diamond growth on levitating seed particles in a rf plasma. We introduce a hot filament chemical vapor deposition (CVD) technique into the rf plasma chamber in order to obtain improved crystal growth. Firstly, we confirmed diamond nucleation on seed particles placed on a Si substrate using the hot filament CVD. The deposition conditions, namely the total pressure and the rf power, were chosen so that they correspond to particles levitation conditions. We observe that a hydrogen pre-treatment on the seed particles improves the nucleation. Secondly, we confirm the levitation of particles at high temperatures. Fine particles levitated in a plasma are particularly sensitive to thermophoretic effects due to inhomogeneities in the gas heating. Therefore, proper heating procedures are required for successful particles levitation.     

射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响

采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380～780nm)范围内平均透射率仍80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160～200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。     

Deposition of nanostructured crystalline and corrosion resistant alumina film on bell metal at low temperature by rf magnetron sputtering

Aluminium oxide films deposited by rf magnetron sputtering for protective coatings have been investigated. The alumina films are found to exhibit grainy surface microstructure. The grain size, structure and density depend on different system parameters such as argon and/or oxygen flow rate and applied rf power etc. The effect of transition of the discharge from metallic to reactive mode on the surface characteristics of the alumina film is studied. X-ray diffractometry reveals that in poisoned mode of sputtering and under optimized power and pressure, crystalline alumina film can be grown. Different system conditions are optimized for corrosion resistant aluminium oxide films with good adhesion properties. Nanostructured alumina film is obtained at lower pressure (8 × 10⁻⁴ to 9 × 10⁻⁴ Torr) by rf reactive magnetron sputtering.     

On the properties and stability of thermally evaporated Ge–As–Se thin films

Thin films of Ge–As–Se chalcogenide glasses have been deposited by thermal evaporation from bulk material and submitted to thermal treatments. The linear refractive index and optical band-gap for as-deposited and annealed films have been analyzed as function of the deposition parameters, chemical composition and mean coordination number (MCN). The chemical composition of the films was found to be directly affected by deposition rate, with low rates producing films with elevated Ge and reduced As content, whilst at high rates the Ge content was generally reduced and As levels increased compared with the bulk starting material. As a result films with close to the same stoichiometry as the bulk glass could be obtained by choosing appropriate deposition conditions. As-deposited films with MCN in between 2.44 and 2.55 showed refractive indices and optical band-gaps very close to those of the bulk glass whereas outside this range the film indices were higher and the optical gaps lower than those of the bulk glass. Upon annealing at close to their glass transition temperature, high MCN films evolved such that their indices and band-gaps approached the bulk glass values whereas at low MCN films resulted in no changes to the film properties.     

Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gas

Microcrystalline and amorphous hydrogenated silicon films were preparaed by rf planar magnetron sputtering in the four kinds of inert gas, i.e., He, Ne, Ar, and Kr. The dependence of such properties as x-ray diffraction, ir spectra, absorption coefficient, hydrogen content, dark conductivity and photoconductivity on the kind of inert gas was investigated. Such deposition conditions as hydrogen partial pressure, sputtering pressure and rf power were also studied mainly in relation to the microcrystallization of the films. Microcrystalline films with noticeably high deposition rate could be obtained in the case of Kr and Ar, compared to the case of He and Ne. Hydrogen concentration was found to correlate to the photoconductivity and activation energy of dark conductivity except for the case of He. Photosensitivity was appreciably larger for amorphous film than for microcrystalline one. Especially in the case of Kr, it was considerably larger than in other cases.     

Study of hydrogenated amorphous silicon nitride films prepared by RF magnetron sputtering

Hydrogenated amorphous silicon nitride films have been deposited by the rf magnetron sputtering method with non-stoichiometric and stoichiometric compositions using a poly-Si target and a mixture of Ar, H₂ and N₂ as the sputtering gas. Data on optical and infrared absorption, electrical conductivity, breakdown voltage, capacitance measurements and thermal evolution of hydrogen have been presented as a function of nitrogen concentration in the films, especially in the stoichiometric region of composition. Attempts have been made to identify the roles of hydrogen and nitrogen in determining the electrical and optical properties and thermal stability exhibited by the films. Properties relevant for device application of the material have been shown to be comparable to those obtained by glow discharge or electron cyclotron resonance plasma chemical vapour deposition methods of deposition. RF magnetron sputtering has therefore been suggested as a viable alternative to the more widely adopted CVD methods for device applications of silicon nitride, where the use of hazardous process gases can be avoided.     

Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

Zinc oxide thin films were prepared by dc (direct current) and rf (radio frequency) magnetron sputtering on glass substrates. ZnO films produced by dc sputtering have a high resistance, while the films produced using rf sputtering are significantly more conductive. While the conductive films have a compact nodular surface morphology, the resistive films have a relatively porous surface with columnar structures in cross section. Compared to the dc sputtered films, rf sputtered films have a microstructure with smaller d spacing, lower internal stress, higher band gap energy and higher density. Dependence of conductivity on the deposition technique and the resulting d spacing , stress, density, band gap, film thickness and Al doping are discussed. Correlations between the electrical conductivity, microstructural parameters and optical properties of the films have been made. PACS 73.25.+i; 81.15.cd; 81.05.ys     

射频激发热丝化学气相沉积制备硅薄膜过程中光发射谱的研究

采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD (rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm²时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有 关键词： HWCVD OES 微晶硅