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研究了磁控溅射制备的Ag5In5Te47Sb33相变薄膜的光谱及短波长静态记录性能。研究结果表明,晶态薄膜反射率较高,并在600~900nm波长范围内,晶态与非晶态的反射率和折射率相差很大。在CD-E系统的工作波长780nm处,晶态反射率高达50%,光学常数为5.34-1.0i;非晶态反射率为23%,光学常数为2.5-1.03i。从这一角度讲,Ag5In5Te47Sb33相变薄膜适于做CD-E系统的记录介质。另外,采用波长为514.4nm的短波长光学静态记录测试仪对Ag5In5Te47Sb33薄膜的记录性能进行了测试,结果表明,这种薄膜短波长记录性能较好,它在较低功率和短脉宽的激光束作用下就可得到较高的反射率对比度。 相似文献
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短波长相变光盘记录介质Ge2Sb2Te5薄膜的制备及静态性能研究 总被引:1,自引:0,他引:1
研究了632.8nm波长下适用的相变光盘介质Ge2Sb2Te5薄膜的制备方法和静态光存诸记录特性,发现该薄膜可在100ns条件下实现直接重写,在优化膜层结构后,写擦循环次数高达10^6,反射率对比度在15%以上。 相似文献
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分别采用固相反应和脉冲激光沉积的方法制备了电荷-轨道有序态锰氧化物Gd0.55Sr0.45MnO3块材和多晶薄膜, 研究了薄膜在光诱导作用下的电阻变化特性. 实验结果表明该薄膜在整个测量温度范围内表现出了半导体型导电特性. 利用变程跳跃模型拟合电阻温度关系可知, 其电荷有序态转变温度为70 K. 激光作用致使薄膜电阻减小, 当激光功率度为40 mW/mm2时, 最大光致电阻相对变化值可达99.8%, 且在8 s的时间内达到了平衡态, 温度对其影响很小; 当激光功率度为6 mW/mm2时, 获得的最大光致电阻相对变化值为44%, 而且时间常数随温度的升高而增大, 这主要是由于光诱导和热扰动共同作用的结果. 相似文献
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原子力显微镜对TeOx薄膜中短波长静态记录点结构的分析 总被引:4,自引:0,他引:4
以真空蒸镀法在K9基底上制备了TeOx单层薄膜,采用特定的定位方法,使用原子力显微镜对不同记录功率下薄膜中短滤长静态记录点(514.5nm)的结构进行了分析。实验结果表明薄膜具有良好的记录灵敏性,在记录功率1.5mW时就可产生较高的反射率对比度,记录点具有明显的凹陷和凸起结构,随着记录功率的提高,凹陷和凸起增强,记录点增大。记录点的形态结构和记录前后反射率对比度是直接相关的。研究揭示了原子力显微镜在提高薄膜存储特性如信噪比,存储密度等方面的分析功能。 相似文献
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To improve the optical storage performance, Sn was doped into Ge2Sb2Te5 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te5 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te5 media. 相似文献
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AgInTeSbGe thin films were deposited by the dc sputtering method. Due to germanium doping in the AgInTeSb film, new Ag2Te and Ge2Sb2Te5 crystalline phases were formed. The crystallization temperature and the activation energy of the AgInTeSbGe thin film increased manifestly with the addition of Ge. The refractive index n and the extinction coefficient k of the AgInTeSbGe film in the amorphous and crystalline states were measured. The reflectivity contrast of the AgInTeSbGe phase-change optical disk was greater than %30 in almost the whole visible region. A minimum recording mark of about 220 nm in length was recorded using the AgInTeSbGe thin film as the recording medium. The reflectivity contrast of the minimum recording mark was about %25. PACS 42.70.Ln; 61.72.Ww; 78.66.Li; 81.30.Hd 相似文献
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《Journal of magnetism and magnetic materials》1986,61(3):301-306
A two-dimensional finite-difference method was applied to study the thermal behavior of thin films irradiated by a pulsed Gaussian laser beam. In particular, the method was applied to rare-earth/transition-metal alloyed films for magneto-optic recording. The effects of film parameters (thermal conductivity, specific heat, absorption coefficient, and film thickness) and laser parameters (output power and pulse duration) on healing and cooling behavior were investigated extensively. The temperature profile of a film was sensitively dependent on these parameters. The results might be used to predict the recorded bit size and to optimize the laser parameters. For a given energy density of the laser beam, a large output power with a short pulse width was desirable for effective heating of a film. Heating by radial thermal diffusion became important with increasing thermal conductivity of a film. Therefore, to achieve high storage density, a film must have low thermal conductivity. 相似文献
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La0.8Sr0.2AlO3 (LSAO) thin films are grown on SrTiO3 (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that theLSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films. 相似文献
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利用直流磁控溅射法制备了一种新型AgInSbTe相变薄膜。示差扫描量热(DSC)实验测定的结晶峰温度为193.92℃。X射线衍射(XRD)表明未经热处理的沉积态薄膜是非晶态,而经过200℃热处理,X射线衍射图出现衍射峰,薄膜从非晶态转变到晶态。同时,研究了晶态和非晶态相变薄膜的吸收率、透射率和反射率随波长的变化。测定了650nm激光作用下的相变薄膜的记录性能,分析了记录功率、记录脉宽对薄膜反射率衬比度的影响,在同一记录脉宽条件下,记录功率越大,反射率衬比度也越大;在同一记录功率条件下,随记录脉宽的增加,反射率衬比度也增大。结果表明,新型AgInSbTe相变薄膜在激光作用下具有较高的反射率衬比度,可获得良好的记录性能。 相似文献
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Ge2 Sb2 Te5相变薄膜光学及擦除性能研究 总被引:2,自引:1,他引:1
利用蓝绿激光对非晶态Ge2Sb2Te5 相变薄膜进行擦除性能的研究,分别用1000 ns,500 ns,100 ns,60 ns脉宽的蓝绿激光进行实验.结果表明,一定脉宽下,反射率对比度随擦除功率的增加而增大.并且,在1000 ns,500 ns,100 ns,60 ns的激光作用时间范围内,非晶态薄膜均可转变成晶态.对于脉宽为60 ns的蓝绿激光,擦除功率大于4.49 mW以后,薄膜的反射率对比度高于15%,这表明Ge2Sb2Te5相变薄膜在短脉宽、低擦除功率条件下,可具有较高的晶化速度.同时,分析了非晶态和晶态Ge2Sb2Te5相变薄膜的光谱特性,对比研究了780 nm,650 nm,514 nm和405 nm波长处的反射率和反射率对比度,提出了Ge2Sb2Te5相变薄膜用于蓝光光盘的改进方法. 相似文献
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LI Jinyan HOU Lisong GAN Fuxi 《Chinese Journal of Lasers》2001,10(4):305-309
1 Introduction Opticaldatastoragebymarkingofmicron sizedspotsonadiskwithalaserisanareawithongoingresearchactivity .Opticaldiskdatastoragehasthecombinedadvantagesofhighstoragedensity ,diskremovable,andlargehead diskworkingdistance.Inrecentyears ,write once… 相似文献
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DONG Xuying GAN Fuxi GU Donghong YIN Jinlong 《Chinese Journal of Lasers》2000,9(4):349-355
1 Introduction High densityinformationstorageisanimportanttechnologicalobjective.Toincreasetherecordingdensityisoneoftheimportantsubjectsinthecurrentandfuturedevelopmentofopticalstoragetechnology .Thedigitalversatiledisc recordable (DVD R)formathasbeenpr… 相似文献
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为研究纳秒激光作用下的VO2薄膜的相变特性,采用泵浦-探测技术进行实验。首先,利用直流磁控溅射法制备VO2薄膜,经X射线衍射(XRD)和原子力显微镜(AFM)分析表明样品质量较高。然后,测量VO2薄膜在波长532 nm处的透过率随温度的变化情况,发现透过率随温度升高由32%上升到37%,与红外波段完全相反。在此基础上,选择1 064 nm泵浦光和532 nm探测光研究激光参数中能量密度和重频对VO2薄膜相变特性的影响,同时结合ANSYS有限元软件对纳秒激光作用下VO2薄膜的单脉冲温升情况进行分析。结果表明:VO2薄膜在大于30 mJ/cm2的纳秒激光能量密度作用下,单脉冲温升可达相变温度,最小相变响应时间在14 ns左右。进一步提高纳秒激光能量密度,其相变响应时间略有增加但变化不大。在100 Hz以内改变纳秒激光重频对VO2薄膜的相变响应基本无影响。VO2薄膜的相变恢复时间随着纳秒激光能量密度的增大而呈自然指数增加,其变化过程与基底材料和纳秒激光参数密切相关。因此,可以通过优化VO2薄膜基底材料参数提高其激光防护效果。 相似文献
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为了探究VO2薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO2薄膜利用分子束外延法在Al2O3基底上制备得到。仿真结果表明,激光功率密度为25 W·mm-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO2薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm-2和5.39 W·mm-2。30 nm厚VO2薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO2薄膜对近红外透过率调制特性不明显。 相似文献