HF分子电子基态和激发态的MRCI计算

应用舍Davidson修正的多参考组态相互作用（MRCI）方法,在aug-cc-pVTZ基组水平上对HF基态及最低的多个单重和三重电子激发态进行了势能扫描计算.结合群论原理及分子的离解极限,分析了电子态势能曲线的特征,得出激发态B¹S⁺对应的离解极限为H⁺+F^-（¹S）.基于势能曲线,数值求解核运动的径向Schrodinge方程,得到J=0时束缚电子态X¹S⁺,B¹S⁺,C¹P和D¹S⁺的振动能级和转动常数,继而进行数据拟合得到电子态的光谱常数,基态X¹S⁺:ω_e=4146.94 cm^-1,ω_ez_e=88.08 cm^-1,B_e=21.22 cm^-1,a=0.785 cm^-1;B¹S⁺态:ω_e=1131.37 cm^-1,ω_ex_e=17.28 cm^-1,B_e=3.96 cm^-1,a_e=0.0215 cm^-1,C¹P态:ω_e=2696.37 cm^-1,ω_ex_e=73.43 cm^-1,B_e=15.91 cm^-1,a_e=0.776 cm^-1,D¹S⁺态:ω_e=3104.22 cm^-1,ω_ex_e=118.92 cm^-1,B_e=17.25 cm^-1,a_e=0.992 cm^-1,拟合结果与实验值吻合的较好.     

HF分子电子基态和激发态的MRCI计算

应用含Davidson修正的多参考组态相互作用(MRCI)方法, 在aug-cc-pVTZ基组水平上对HF基态及最低的多个单重和三重电子激发态进行了势能扫描计算. 结合群论原理及分子的离解极限, 分析了电子态势能曲线的特征, 得出激发态B1对应的离解极限为H++F-(1S). 基于势能曲线, 数值求解核运动的径向Schrödinger方程, 得到J=0时束缚电子态X1, B1C1和D1的振动能级和转动常数, 继而进行数据拟合得到电子态的光谱常数, 基态X1e=4146.94 cm-1, exe =88.08 cm-1, e=21.22 cm-1, e=0.785 cm-1; B1态：e=1131.37 cm-1,exe =17.28 cm-1, e=3.96 cm-1, e=0.0215 cm-1, C1态e=2696.37 cm-1, exe =73.43 cm-1, e=15.91 cm-1, e=0.776 cm-1, D1态e=3104.22 cm-1, exe =118.92 cm-1, e=17.25cm-1, e=0.992cm-1, 拟合结果与实验值吻合的较好.     

The electronic spectrum of silicon monotelluride radical

In the electronic spectrum of silicon monotelluride which has been produced in microwave discharges through sealed tubes, a large number of new bands belonging to theA ¹Π-X ¹Σ⁺ system (3100–3900 Å) and theE ¹Σ⁺-X ¹Σ⁺ system (2800–3100 Å) of Si¹³⁰Te has been observed. The vibrational structure analyses of these band systems have resulted in the determination of improved vibrational constants in all the three electronic states involved in these transitions. An error in the previous determination of the vibrational constants of theE ¹Σ⁺ state has been corrected. An upper limit for the dissociation energy of the silicon monotelluride has been determined to be 40,000 cm^?1.     

Electronic states and spectroscopic properties of GeSi

Electronic structure and spectroscopy of the GeSi molecule have been investigated by performing ab initio based multireference configuration interaction calculations. Potential energy curves of 29 Λ-S states of singlet, triplet, and quintet spin multiplicities have been constructed. Spectroscopic constants of 24 bound states within 36 000 cm⁻¹ are reported and compared with the available data. The calculated dissociation energy of GeSi in the ground state is 2.80 eV. Effects of the spin-orbit coupling on the spectroscopic properties of the molecule have been found to be small. However, the computed zero-field-splitting of the ground state compares well with the earlier prediction. Transitions such as 2³Σ⁻-X³Σ⁻, 3³Σ⁻-X³Σ⁻, 4³Π-A³Π, 5³Π-A³Π etc. are relatively strong. Radiative lifetimes for several dipole allowed and spin-forbidden transitions are calculated. The estimated lifetimes of the 2³Σ⁻, 3³Σ⁻, and 5³Π states are about 109, 33, and 62 ns, respectively. Dipole moments of most of the low-lying states of GeSi are also reported.     

The electronic emission spectrum of SiB

The gas phase spectrum of the silicon boride radical has been observed for the first time. Two electronic transitions were observed in emission from a corona excited supersonic expansion source. The D⁴Σ⁻-X⁴Σ⁻ system consists of emission from v′ = 0 to v″ = 0-3, while the A⁴Π-X⁴Σ⁻ system consists of numerous bands with v′ = 0-5 and v″ = 0-11, although only the strong 0-0 and 0-1 bands have been analyzed so far.     

MRCI study on spectroscopic and molecular properties of four low-lying electronic states of the BO radical

The potential energy curves (PECs) of four low-lying electronic states of the BO radical, including two ²Σ⁺ and two ²Π states, have been studied using the full valence complete active space self-consistent field (CASSCF) method followed by the highly accurate valence internally contracted multireference configuration interaction (MRCI) approach in combination with the cc-pV5Z basis set for internuclear separations from 0.05 to 2.0 nm. The effect on the PECs by the relativistic correction has been taken into account. With these PECs, the spectroscopic parameters (T_e, D₀, D_e, R_e, ω_e, ω_ex_e, α_e and B_e) of two main isotopologues (¹¹B¹⁶O and ¹⁰B¹⁶O) have been determined. These parameters have been compared in detail with those of previous investigations reported in the literature, and excellent agreement has been found between the available data and the present results. By solving the radial Schrödinger equation of nuclear motion, 60 vibrational states for the ¹¹B¹⁶O(X²Σ⁺), 60 for the ¹⁰B¹⁶O(X²Σ⁺), 66 for the ¹¹B¹⁶O(A²Π) and 64 for the ¹⁰B¹⁶O(A²Π) are predicted for the non-rotating molecule. For each vibrational state of the ¹¹B¹⁶O(X²Σ⁺), ¹⁰B¹⁶O(X²Σ⁺), ¹¹B¹⁶O(A²Π) and ¹⁰B¹⁶O(A²Π), the vibrational level G(υ), inertial rotation constant B_υ and centrifugal distortion constant D_υ have been determined. Comparison with the available data shows that the present molecular constants are reliable and accurate. The ro-vibrational levels have been calculated for the X²Σ⁺ and A²Π states of two main species for future laboratory research.     

Accurate ab initio study of low-lying electronic states of phosphorus nitride radical

This paper employs the highly accurate valence internally contracted multireference configuration interaction method to investigate the potential energy curves (PECs) for the ground state (X 1 Σ +) and two low-lying excited states (A 1 Π and D 1 of phosphorus nitride (PN) radical with the correlation-consistent basis set,aug-cc-pV6Z,in the valence range.Relativistic effects are considered in these calculations.The spectroscopic constants of the X 1 Σ + and A 1 Π states are calculated based on the PECs,and the results are in good accord with the available experimental data.The first 30 vibrational states for the X 1 Σ + state and the first 40 vibrational states for theA 1 Π state are determined when J=0.For each vibrational state,molecular constants G(υ),B(υ) and D(υ) are also attained.     

GeCl分子激发态的势能曲线和辐射寿命的理论研究

采用考虑Davidson校正、标量相对论效应、芯-价电子关联和自旋-轨道耦合效应高精度的多参考组态相互作用方法计算了GeCl分子的最低解离极限Ge(3Pg)+Cl(2Pu)对应的12个Λ-S电子态的势能曲线. 基于计算得到的势能曲线, 求解一维核运动的Sch?rdinger方程得出束缚态的光谱常数, 这些光谱常数与实验值符合较好. 本文计算了12个Λ-S态的电偶极矩随核间距的变化, 分析了电子态组态成分的变化对电偶极矩的影响. 本文还研究了GeCl分子的辐射跃迁性质, 给出了激发态到基态之间和低激发态之间的跃迁偶极矩和电子态之间的Franck-Condon因子, 并根据计算得到的跃迁偶极矩和Franck-Condon因子计算出了束缚激发态低振动能级的辐射寿命.     

Theoretical electronic structure of the lowest-lying states of ScCl molecule below 22 500 cm

Potential energy curves and theoretical spectroscopic constants are obtained for 18 electronic states of ScCl molecule in the representation ^2s+1Λ^+/− by CASSCF/MRCI calculations in all electron schemes for both atoms scandium and chlorine. The theoretical computational results of the lowest 10 singlet states and of 5 triplet states are in good agreement with experimental values and confirm the relative order of these states. In this work, three unobserved triplet states (2)³Π, (1)³Σ⁻ and (3)³Π are predicted for the first time in the transition energy range of 22 500 cm⁻¹.     

A theoretical study of structural and electronic properties of a missing dimer defect on Si- and C-terminated SiC(0 0 1)

We present a theoretical study of the geometrical and electronic properties of the C- and Si-terminated -SiC(0 0 1) surfaces in the vicinity of the missing dimer defect. The experimental results suggest that the atomic structures of these two surfaces may be considerably modified by external stress. In our present study we have considered the possible influence of this factor on the surface geometry of both systems. We have shown that the structural differences between the C- and Si-terminated surfaces lead to their different behaviour in the presence of a missing dimer and applied stress. In the case of the C-terminated c(2×2) surface, the missing dimer defect causes the buckling of the adjacent carbon dimers lying in the line of the defect (dimer atoms adjacent to the defect have vertical positions lower by 0.18 Å). This effect becomes more pronounced in the presence of compressive stress — the stress of 8% leads to the buckling of these two dimers of around 0.5 Å. The vertical positions of silicon atoms located directly below the defect were increased by 0.2 Å. We have also found that the missing dimer influences the structure of the carbon dimers on the neighbouring lines of dimers. Contrary to the C-terminated surface, the missing dimer defect on the Si-terminated SiC(0 0 1)-p(2×1) surface remains neutral for silicon dimers located in the line of defect, i.e. the dimers do not change their geometrical properties in unstrained structure nor in the presence of a tensile stress. On the other hand, this defect modifies considerably the geometry of the dimers from the two neighbouring lines of dimers by reducing their bond lengths and vertical positions. Changes in the geometrical properties of the second neighbour dimers (with respect to the defect) in these two lines are also noticeable. Moreover, we have found that the presence of a missing dimer modifies significantly the positions of the adjacent subsurface carbon atoms.     

CN~+离子电子结构和跃迁性质的理论研究

采用多组态参考相互作用方法和AV5Z-DK基组对CN~+离子的两个解离极限C~+(~2P_u)+N(~2D_u)和C~+(~2P_u)+N(~4S_u)下的X~1Σ~+、a~3Π、~1Δ和A~1四个电子态的势能曲线、永久偶极矩和振动能级进行了计算.为保证计算结果的精确性,在计算中考虑了Davidson修正.基于求得的势能曲线,数值求解一维径向薛定谔方程得到了各个电子态的光谱数据,并与实验值和已有的理论值吻合较好.除此之外,对A~1Π→X~1Σ~+和1~1Δ?A1~Π的跃迁性质进行了研究,同时通过跃迁的弗兰克-康登因子及辐射寿命,对CN~+离子激光冷却的可行性进行了分析.     

The vibrational spectrum of thiazole between 600 and 1400 cm revisited: A combined high-resolution infrared and theoretical study

The Fourier transform infrared gas-phase spectrum of thiazole, C₃H₃NS, has been recorded in the 600-1400 cm⁻¹ wavenumber region with a resolution around 0.0030 cm⁻¹. Nine fundamental bands (ν₅(A′) to ν₁₁(A′), ν₁₅(A″), and ν₁₆(A″)) are analysed employing the Watson model. Ground-state rotational and quartic centrifugal distortion constants as well as upper state spectroscopic constants have been obtained from the fits. A detailed analysis of perturbations identified in the ν₁₁(A′) band at 866.5 cm⁻¹ enables a definitive location of the very weak ν₁₀(A′) and ν₁₄(A″) bands at 879.3 and 888.7 cm⁻¹, respectively. The three levels are analysed simultaneously by a model including Coriolis resonance using an ab initio predicted first order c-Coriolis coupling constant; second and higher order Coriolis parameters are determined. Qualitative explanations in terms of Coriolis resonances are given for a number of crossings observed in ν₅(A′), ν₆(A′), and ν₇(A′) at 1383.7, 1325.8, and 1240.5 cm⁻¹, respectively. The rotational constants, anharmonic frequencies, and vibration-rotation constants (alphas, ) calculated by quantum chemical calculations using a cc-pVTZ and TZ2P basis with B3LYP methodology, have been compared with the present experimental data. The rotation constant differences for each vibrational state, from the ground state values, are closer to experiment from the TZ2P calculations relative to those using cc-pVTZ. The values for Δ_J, Δ_JK, Δ_K, δ_J, and δ_K are close to experiment with both basis sets.     

PS(X~2Π_r)基态势能函数与光谱常数研究

根据群论及原子分子反应静力学的有关原理,推导了PS基态分子电子态及其合理的离解极限.采用Gaussian 03软件中的密度泛函理论B3LYP和B3P86结合6-311++G(3df,3pd)、6-311++G、6-311G(3df,3pd)、cc-p VTZ和D95基组,对PS分子基态平衡结构和谐振频率进行了计算.通过比较计算结果,发现B3P86方法结合cc-p VTZ基组计算所得结果与实验值最接近.在该水平下对PS分子的基态进行了单点势能扫描计算,利用正规方程组拟合三参数的Murrell-Sorbie函数和修正的Murrell-Sorbie+C6函数,得到了基态PS分子完整的势能函数与相应的光谱常数ωe、ωexe、Be和αe的值.计算结果表明,利用三参数的Murrell-Sorbie函数计算所得的光谱常数与实验数据吻合得更好.     

Infrared emission studies of the AΣ-XΠ electronic transition of the SiC radical

The gas phase infrared emission spectrum of the A³Σ⁻-X³Π electronic transition of SiC has been observed using a high resolution Fourier transform spectrometer. Three bands ν′ − ν″ = 0-1, 0-0, and 1-0 have been observed in the 2770, 3723, and 4578 cm⁻¹ regions, where the 0-1 and 0-0 bands were observed for the first time. The SiC radical was generated by a dc discharge in a flowing mixture of hexamethyl disilane [(CH₃)₆Si₂] and He. A total of 1074 rotational transitions assigned to the 0-1, 0-0, and 1-0 bands have been combined in a simultaneous analysis with previously reported pure rotational data to determine the molecular constants for SiC in the two electronic states. The principal equilibrium molecular constants for the A³Σ⁻ state are: B_e = 0.6181195(18) cm⁻¹, α_e = 0.0051921(20) cm⁻¹, r_e = 1.8020884(26) Å, and T_e = 3773.31(17) cm⁻¹, with one standard deviation given in parentheses. The effect of a perturbation was recognized between the ν = 4 level of X³Π and the ν = 0 level of A³Σ, and the analysis was carried out to determine the interaction parameter between the two states.     

MRCI studies on ground and excited states of CBr

Potential curves and spectroscopic constants for a large number of doublet and quartet states of CBr were obtained by multireference configuration interaction calculations, using valence triple-zeta basis sets with polarization and diffuse functions. Besides the X²Π ground state, 1⁴Σ^?, 1²Δ and 2²Σ⁺ have been found to be stable. Spectroscopic constants calculated for 1²Δ are in excellent agreement with experimental values obtained by Dixon and Kroto in 1963. Their observed predissociation of one component of 1²Δ can be explained by the crossing of the 1²Δ potential near equilibrium by 1²Σ⁺. The 1²Σ⁺ state is calculated to have a shallow long-range minimum at 2.31?Å. The dissociation energy of X²Π is calculated to be 3.43?eV. An observed T _e of 4.97?eV for 2²Σ⁺ agrees with the theoretical value. Several Rydberg states of the 2π→Ryd and 3σ→Ryd series, starting at T _e ?=?5.25?eV, were identified. Photodissociation of CBr by sunlight, important in the ozone cycle, can occur via direct dissociation of the ground state, or by excitation to 1²Δ followed by predissociation. Most dissocative repulsive states lie at higher energies, and are not expected to participate in the photodisscociation of CBr.     

NaK低激发态光谱性质和辐射寿命的从头算

本文对NaK的电子结构做了高级从头算. 计算了与三个最低解离极限相关的10个?-S态的势能曲线. 基于计算的势能曲线,得到了束缚?-S态的光谱常数,与实验结果吻合较好. 用半经典散射理论分析了单重态基态X¹Σ⁺和三重态基态a³Σ⁺的最大振动量子数. 研究了包括跃迁偶极矩、夫兰克-康登因子和辐射寿命在内的跃迁特性. 研究结果表明,这种计算方法可以为超冷碱双原子分子实验提供较为可靠的参数估计.     

Further investigations of the low-lying electronic states of AsO~+ radical

The high level quantum chemistry ab inito multi-reference configuration interaction （MRCI） method with large V5Z basis set is used to calculate the spectroscopic properties of the 15 A-S electronic states （X1∑＋, A I П, 1 △, 1 ∑, 3∑＋, 3П, 3△, 3△ , 5∑＋, 5П, 5△, 1П （II）, ofAsO＋ radical correlated to the dissociation limit As＋（3pg） ＋ O（3pg） and As＋（IDg） ＋ O（1Dg）. In order to obtain better potential curves and more accurate spectroscopic properties, the Davidson modification is taken into account. With the potential energy curves （PECs） determined here, vibrational levels G（v） and inertial rotation constants Bu are computed for all the bound electronic states when the rotational quantum number J equals zero （J = 0）. Except for the states X1∑＋, A1П , it is the first time that the multi-reference configuration calculation has been used on the 13 A-S electronic states of the AsO＋ radical. The potential energy curves of all the A-S electronic states are depicted according to the avoided crossing rule of the same symmetry. Spin-orbit coupling effect （SOC） is introduced into the states X1 ∑＋, A1 П, 3П to consider its effects on the spectroscopic properties. Transition dipole moments （TDMs） from A1П 1, 3 П1 states to the ground state X1∑0＋ are predicted as well.     

A generalized quasi-sum relations for oscillator strengths in transition arrays: theoretical study of the opacity of Ge plasmas

We present a simplified relativistic configuration interaction method (SRCI), by which all the energy levels and oscillator strengths in each transition array can be calculated. There exist generalized quasi-sum relations for the calculated oscillator strengths in the relevant transition arrays by the SRCI and by an unresolved transition array model (UTA). Based on UTA and the detailed configuration accounting (DCA), with a fully relativistic treatment incorporated with the quantum defect theory, the X-ray absorption spectra for any middle- and high-Z plasmas or composite plasmas can be calculated with much less computational efforts. The gross features of calculated spectra by DCA-UTA are in agreement with the relevant experimental measurements, except some detailed structures in some narrow spectral ranges. Such detailed structures can be calculated by SRCI incorporated with DCA-UTA. As an illustrative example, the absorption spectra of Ge plasmas are calculated by DCA-UTA-SRCI and are in agreement with the experimental opacity data. Therefore, the theoretical method (DCA-UTA-SRCI) verified by experimental measurements will not only be a basic tool to provide “precision” opacity data for the inertial confinement fusion research (ICF) and studies in stellar physics but also can be used to analyze the relevant diagnostic measurements for ICF plasmas.     

The influence of graded interfaces in the electronic spectrum of nanometer silicon dots

The effects imposed to the electron energy levels of Si/SiO₂ quantum dots by the presence of smooth graded interfaces and interfacial carriers trap is studied. For small diameter quantum dots, while the existence of graded interfaces strongly blue shifts the carrier energy states (up to a few hundred meV), the effect of the interfacial carriers trap is to red shift the energies, but to a lesser extend (under 50 meV). In addition, slight changes in the distance of the carriers trap in relation to the center of the dot does not alter significantly the energy spectrum.     

An MRD-CI study of the electronic spectrum of Si3C3

Large-scale multi-reference configuration interaction (MRD-CI) calculations are used to compute the electronic spectrum of the pyramidal Si₃C₃ cluster. The first dipole-allowed transition is predicted at 4.30 eV. The dominating transition (21A′′←X1A′) is calculated at 4.74 eV with a π→π∗-type oscillator strength of f=0.52. This excitation together with two somewhat less intense (f=0.01-0.07) transitions around 5.2 eV and higher excitations between 5.7 and 5.9 eV could serve as a guideline for experimental search.