Quantitative measurement of Q species in silicate and borosilicate glasses using Raman spectroscopy

Raman spectroscopy has been used to measure the fraction of tetrahedral silicate units connected at three corners into the network (Q³) in binary lithium silicate glasses and also in the more complex borosilicate glasses used for waste immobilization. Agreement within experimental error was obtained with ²⁹Si MAS NMR measurements of the same samples. Raman provides an alternative method of structural determination for silicon-containing glasses with a high content of paramagnetic species where NMR loses resolution. Analysis was performed on borosilicate glasses containing up to 11.98 mol% Fe₂O₃ and the Q³ values obtained by Raman spectroscopy agree within error with the published ²⁹Si NMR results from borosilicate glasses containing the equivalent quantity of Al₂O₃.     

Effect of electron irradiation on Na-K silicate glass investigated using X-ray photoelectron spectroscopy and pattern recognition method

Alkali silicate glasses and melts play an important role in material science. Electron interaction with glasses is important for radioactive waste deposition, where electrons of various energies lead to irreversible changes. These changes are caused mainly by ionization and ballistic interaction of electrons with atoms, introducing structural disorder, changes in atomic composition and chemical state, accompanied by alkali ions diffusion. The Na-K silicate glass (5Na₂O · 10K₂O · 85SiO₂), pristine and electron irradiated (doses from 25 C m⁻² to 20 236 C m⁻²) are investigated using X-ray photoelectron spectroscopy (XPS) and the pattern recognition (PR) and fitting procedures. Changes of composition and chemical state of atoms dependent on electron dose are analyzed. At low doses (100-300 C m⁻²), decrease followed by increase of O and Si concentrations was observed. Surface segregation, probable desorption, and in-bulk diffusion of K and Na ions (doses of about 50 C m⁻² and 2000 C m⁻², respectively) were observed. This was accompanied by changes in the chemical state of K atom, where with an electron dose increasing content of elemental K form accompanied by decreasing potassium peroxide form were observed. No difference in chemical state of Si and O atoms was visible under electron irradiation dose to 20 236 C m⁻², within the sensitivity of the applied method.     

X-ray photoelectron spectroscopy of silica in theory and experiment

Fourier deconvolved X-ray photoelectron spectroscopy (XPS) valence band spectra obtained from crystalline and amorphous silica, used in conjuction with the results of quantum chemical calculations of the SiO₄ tetrahedral unit and other spectrometric measurements (soft X-ray emission, UV absorption and reflectivity, photoconductivity, photoinjection and energy loss spectroscopy), suggest a reinterpretation of the electronic band structure of silica that is consistent with all the data. A unique method for pinning the Fermi level of insulators to that of a metal calibrant is described, resulting in the ability to obtain absolute binding energies of the electronic levels in wide bandgap insulators. Observe peaks in UV reflectivity and energy loss spectra of silica are all assigned to direct interband transitions, and no excitonic states need be involved to explain the data. Upper and lower limits for the bandgap of dry crystalline (α-quartz) and amorphous (Corning Code 7940 glass) silica are adjusted downward from the 8.9 eV bandgap proposed by DiStefano and Eastman [1] to 7.8–5.55 eV for α-quartz and 7.3–5.05 eV for fused silica, respectively. This in no way compromises the obvious insulating properties of silica in MOS devices, since the conductivity is governed by the high barrier height (～3.8 eV in the case of gold) for metal-insulator electron transfer. The lowered bandgap results from increased low-energy electron density in the valence band, which we ascribe to the 1t₁ molecular orbital predicted by various quantum formalisms, but heretofore not detected experimentally in bulk (thick) silica. Disappearances of this orbital and rearrangement of the non-binding 5t₂ and 1e orbitals in silicas rich in silanols (OH), as may be the case for thin-film silica on Si metals, would increase the bandgap to 8.3 eV, in better agreement with previous determinations.     

Deep-UV Raman spectroscopic analysis of structure and dissolution rates of silica-rich sodium borosilicate glasses

As part of ongoing studies to evaluate relationships between structure and rates of dissolution of silicate glasses in aqueous media, sodium borosilicate glasses of composition Na₂O·xB₂O₃·(3 − x)SiO₂, with x ≤ 1 (Na₂O/B₂O₃ ratio ≥ 1), were analyzed using deep-UV Raman spectroscopy. Results were quantified in terms of the fraction of SiO₄ tetrahedra with one non-bridging oxygen (Q³) and then correlated with Na₂O and B₂O₃ content. The Q³ fraction was found to increase with increasing Na₂O content, in agreement with studies on related glasses, and, as long as the value of x was not too high, this contributed to higher rates of dissolution in single pass flow-through testing. In contrast, dissolution rates were less strongly determined by the Q³ fraction when the value of x was near unity, and appeared to grow larger upon further reduction of the Q³ fraction. Results were interpreted to indicate the increasingly important role of network hydrolysis in the glass dissolution mechanism as the BO₄ tetrahedron replaces the Q³ unit as the charge-compensating structure for Na⁺ ions. Finally, the use of deep-UV Raman spectroscopy was found to be advantageous in studying finely powdered glasses in cases where visible Raman spectroscopy suffered from weak Raman scattering and fluorescence interference.     

X-ray photoelectron spectroscopy (XPS) and magnetic susceptibility studies of vanadium phosphate glasses

Vanadium phosphate glasses with the nominal chemical composition [(V₂O₅)_x(P₂O₅)_1?x], where x = 0.30, 0.40, 0.50, and 0.60, have been prepared and investigated by X-ray photoelectron spectroscopy (XPS) and magnetization measurements. Asymmetries found in the O 1s, P 2p, and V 2p core level spectra indicate the presence of primarily P–O–P, P–O–V, and V–O–V structural bonds, a spin–orbit splitting of the P 2p core level, and more than one valence state of V ions being present. The magnetic susceptibility data for these glasses follow a Curie–Weiss behavior which also indicates the presence of some V ions existing in a magnetic state, i.e., a valence state other than that of the non-magnetic V⁵⁺. From qualitative comparisons of the abundance of the bridging oxygen or P–O–P sites as determined from the areas under the various O 1s peaks with the abundances of differing phosphate structural groups associated with the presence of different valence states of the vanadium ions, a glass structure model consisting of a mixture of vanadate phosphate phases is proposed for these glass samples. These include V₂O₅, VOPO₄, (VO)₂P₂O₇, VO(PO₃), and V(PO₃)₃ with the abundance of orthophosphate (PO₄)^3? units increasing with increasing vanadium content.     

Structure and lattice dynamics of binary lead silicate glasses investigated by infrared spectroscopy

The polar lattices dynamics of seven binary lead silicate glasses have been studied by infrared spectroscopy. The analysis of the reflectivity spectra with a dielectric function model, based on a modified Gaussian profile, allows a quantitative evaluation of the presence of lead cations within different structural sites. From the role of the lead cations versus the degree of polymerization of the silicate network and the comparison with literature results, we may to give a scenario for explaining the observed structural evolution of the glass matrix and more particularly the drastic change occurring around 45% of lead content. Below this threshold, lead cations act only as modifiers of the silicate network. Above, the glass structure is deeply modified; a lead network involving around 10% of the lead content appears in glasses whose composition is just above the threshold and progressively grows at the expense of the silicate network with the increase of lead content. For high lead content, lead cations can act as modifiers of the silicate network or as network formers. Results also show that the analysis of far infrared measurements combined with the knowledge of the UV edge optical response is very promising to characterize the local disorder around cations in glasses.     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

The study of bis-chloromethyl-phosphinic acid crystal by ATR and Raman spectroscopy and X-ray diffraction

Crystals of bis-chloromethyl-phosphinic acid ((CH₂Cl)₂POOH) are studied by attenuated total reflection (ATR) and Raman spectroscopy supported by X-Ray diffraction. The bands recorded in the ATR and in Raman spectra have the same wavenumbers within experimental uncertainty. It is in agreement with the X-Ray diffraction results which show that the molecules in crystals form infinite chains through hydrogen bonds and there is no center of inversion. The parameters of the unit cell, the bond lengths and angles, and the distance between two oxygen atoms in hydrogen bond bridges are determined. The spectral features and the intermolecular distance between oxygen atoms are characteristic for a strong hydrogen bonded system.     

Confinement of selenium inside carbon nanotubes. Structural characterization by X-ray diffraction and X-ray absorption spectroscopy

In order to study the effect of confinement on crystallographic arrangement, selenium (Se) was introduced into carbon nanotubes with average diameters of 12, 23 and 50 Å. The evolution of the Se long-range crystallographic arrangement and the Se short-range atomic surroundings was characterized by X-ray diffraction and X-ray absorption spectroscopy, respectively. A transition from an initially disordered trigonal structure, where part of the chains are not well connected, to a structure exhibiting well-organized rings was observed when the tube diameter was of the order of 12 Å. Se-C bonds, detected when nanotube average diameters were of the order of 20 Å and less, might play a role in the structural transition.     

RDF analysis, positron annihilation and Raman spectroscopy of xTiO2-(60 − x)SiO2-40Na2O non-linear optical glasses: III. Non-bridging oxygen bonds tracing and structure analysis

xTiO₂-(60 − x)SiO₂-40Na₂O glasses have proven an interesting linear and non-linear optical properties [M. Abdel-Baki, F. Abdel Wahab, F. El-Diasty, Mater. Chem. Phys. 96 (2006) 201]. The investigated glasses show one order of magnitude enhancement for the second-order index of refraction and third-order optical susceptibility over some TiO₂ silicate glasses. In this work, we continue studying these glasses using three different techniques to analyze the glass structures seeking to provide a deep insight for the relation between structure, compositions and the optical characteristics of these glasses. Radial Distribution Function analysis (RDF) combined Raman spectroscopy are used to study these glasses. Positron annihilation lifetime spectroscopy and Doppler broadening measurements are carried out to investigate the change in the glass structure as the incorporation of TiO₂ concentration into glass. The origin of the non-bridging oxygen (NBO) bonds has been traced to correlate their existence with the measured non-linear optical properties of the investigated glasses.     

Combined investigations of NiAl alloys by means of X-ray photoelectron spectroscopy,compton gamma scattering and positron annihilation

The results of measurements of Compton profiles, photoelectron spectra, positron annihilation curves, and lifetime spectra of several NiAl alloys are discussed in terms of bonding and stability in transition metal aluminides. The interpretation of experimental Compton profiles suggests a transfer of nearly-free electrons from Al sites to more localized d-like states on Ni-sites. The transfer increases with Al contents up to 50 atomic percent. From X-ray photoelectron spectra in the case of Al-rich alloys a different behaviour follows. The results support a model established by Wenger. Following this in the composition range above 50 percent Al no further charge is transferred to Ni cells. The Ni d states seem to be occupied in the Al-rich alloys. A preferential annihilation of positrons in Ni cells is though to have its origin in the enhanced negative charge of these cells caused by charge transfer.     

Structural analysis of CaSiO3 glass by X-ray diffraction and Raman spectroscopy

The short-range structure of CaSiO₃ glass was studied by a combination of radial distribution analysis with an intensity comparison method on the basis of X-ray diffraction data. Three main peaks appeared at 1.64, 2.43 and 3.64 Å in the radial distribution function curve. The Raman bands were observed at 367, 642, 878 and 972 cm⁻¹ and the Raman spectrum was found to be similar to that observed in pyroxenes: single chains consisting of SiO₄ tetrahedra are linked by calcium ions laterally. The calcium ion is surrounded by six oxygen atoms at an average distance of 2.34 Å and the remainder Ca---O pairs at a distance of 2.54 Å. The calculated intensity curve based on this model was in good agreement with the observed one.     

Influence of substrate temperature on nitridation of (0 0 1) GaAs using RF-radical source

The mechanism of nitridation of (0 0 1) GaAs surface using RF-radical source was systematically studied with changing substrate temperature, nitridation time and supplying As molecular beam. It was found from atomic forth microscopy (AFM) measurements that supplying As is very important to suppress the re-evaporation of As atoms and to keep the surface smooth. Reflection high-energy electron diffraction (RHEED) measurements shows that surface lattice constant (SLC) of GaAs of 0.565 nm decreases with increasing the substrate temperature and that it finally relaxes to the value of c-GaN of 0.452 nm, at 570 °C in both [1 1 0] and [1¯ 1 0] directions without concerning with the supply of As molecular beam. But, in the medium temperature range (between 350 and 520 °C), SLC of [1 1 0] direction was smaller than that of [1¯ 1 0] direction. This suggests a relation between the surface structure and the relaxing mechanism of the lattice. The valence band discontinuity between the nitridated layer and the GaAs layer was estimated by using X-ray photoemission spectroscopy (XPS). It was between 1.7 and 2.0 eV, which coincides well with the reported value of c-GaN of 1.84 eV. This suggests that the fabricated GaN layer was in cubic structure.     

Structural investigation of SnO-B2O3 glasses by solid-state NMR and X-ray photoelectron spectroscopy

Local structure of the SnO-B₂O₃ glasses was investigated using several spectroscopic techniques. ¹¹B MAS-NMR spectra suggested that BO₄ tetrahedral units maximized at around the composition with 50 mol% SnO. The BO₄ units were still present at compositions with high SnO content (67 mol% SnO), suggesting that SnO acted not only as a network modifier but also as a network former. O1s photoelectron spectra revealed that the addition of small amounts of SnO formed non-bridging oxygens (NBO) (B-O?Sn) and the amounts of NBO increased with an increase in SnO content. ¹¹⁹Sn Mössbauer spectra indicated that Sn was present only as Sn(II) in the glasses. The structure of the SnO-B₂O₃ glasses was compared with that of conventional alkali borate glasses and lead borate glasses. The thermal and viscous properties of these glasses were discussed on the basis of the glass structure revealed in the present study.     

Tin valence and local environments in silicate glasses as determined from X-ray absorption spectroscopy

X-ray absorption spectroscopy (XAS) was used to characterize the tin (Sn) environments in four borosilicate glass nuclear waste formulations, two silicate float glasses, and three potassium aluminosilicate glasses. Sn K-edge XAS data of most glasses investigated indicate Sn⁴⁺O₆ units with average Sn-O distances near 2.03 Å. XAS data for a float glass fabricated under reducing conditions show a mixture of Sn⁴⁺O₆ and Sn²⁺O₄ sites. XAS data for three glasses indicate Sn-Sn distances ranging from 3.43 to 3.53 Å, that suggest Sn⁴⁺O₆ units linking with each other, while the 4.96 Å Sn-Sn distance for one waste glass suggests clustering of unlinked Sn⁴⁺O₆ units.     

Raman and ATR FTIR spectroscopy in reactive crystallization: Simultaneous monitoring of solute concentration and polymorphic state of the crystals

Batch-reactive crystallization of the two polymorphs of l-glutamic acid was studied using in-line Raman and ATR FTIR spectroscopy. It was observed that the barrier to the nucleation of the stable β-form was higher, and thus the occurrence of β-form nucleation requires a higher supersaturation level. The local supersaturation level inside the reactive crystallizer is significantly affected by the feeding manner of the reactant. When the reactant was fed to a poorly mixed zone, such as the surface of the liquid, a high local supersaturation level was generated near the feeding point. This high local supersaturation level drastically increased with the increase in the concentrations of the reactants. As a consequence, the fraction of the β-form increased with the increase in reactants concentrations. On the other hand, feeding the reactant to a well-mixed zone near the impeller can avoid the occurrence of high local supersaturation, and therefore the dependence of the polymorphic composition of the final product on the concentration of the reactants can be reduced. The information obtained from the spectroscopy leads to improved understanding of the precipitation process and offers great potential for process optimization and control of crystalline quality.     

X-ray powder diffraction and Raman spectroscopy studies of phase transitions in zinc(II) hexaaquonitrate below 300 K

Structural phase transitions in zinc(II) hexaaquonitrate have been studied below 300 K by Raman spectroscopy and X-ray powder diffraction. Changes of A1 nitrate and O H bands together with diffractograms as functions of temperature are presented. The compound undergoes several transitions and four previously unreported modifications were found and characterized.     

Determination of sulfur environments in borosilicate waste glasses using X-ray absorption near-edge spectroscopy

Sulfur can be the waste-loading limiting constituent for vitrification of sulfur-bearing radioactive wastes due to low solubility in silicate melts. Methods to improve sulfur loading would benefit from improved understanding of the structural aspects of sulfur incorporation in borosilicate and other glasses. To this end, sulfur XANES spectra were collected for eight crystalline standards and twenty-four glasses, including borosilicate, phosphate, and borate compositions. Spectra for the standards show a systematic energy shift of the sulfur K-edge from 2469 to 2482 eV, as sulfur valence increases from 2− (in sulfides) to 6+ (in sulfates). Most crucible glasses investigated have simple edges near 2482 eV that indicate sulfur in the form of sulfate only. Other glasses, some synthesized under reducing conditions, have complicated edges, indicating sulfate, sulfite, and more reduced species that may include S, S-S doublets, or short polysulfide chains. Sulfide species (S²⁻) were not dominant in any of the samples over the range of redox conditions investigated. These results indicate that sulfur incorporation is considerably more complex than would be suggested by the conventional interpretation of the redox-dependence of sulfur solubility, which considers only sulfate and sulfide species. Raman data indicate that several of the glasses investigated are not homogeneous with regard to all sulfur species.     

Study of group-III binary and ternary nitrides using X-ray absorption fine structure measurements

It is demonstrated that the NEXAFS spectra are a “fingerprint” of the symmetry and the composition of the binary nitrides GaN, AlN and InN, as well as of their ternary alloys In_0.16Ga_0.84N and Al_yGa_1−yN. From the angular dependence of the N-K-edge NEXAFS spectra, the hexagonal symmetry of the under study compounds is deduced and the (p_x, p_y) or p_z character of the final state is identified. The energy position of the absorption edge (E_abs) of the binary compounds GaN, AlN and InN is found to red-shift linearly with the atomic number of the cation. The E_abs of the Al_yGa_1−yN alloys takes values in between those corresponding to the parent compounds AlN and GaN. Contrary to that, the E_abs of In_0.16Ga_0.84N is red-shifted relative to that of GaN and InN, probably due to ordering and/or phase separation phenomena. The EXAFS analysis results reveal that the first nearest-neighbour shell around the N atom, which consists of Ga atoms, is distorted in both GaN and Al_xGa_1−xN for x<0.5.