Ti/Au复合电极在CdZnTe(111)B面上的表面结构与性能研究

近年来,碲锌镉(CdZnTe)材料制成的探测器已经成为研究热点,适当的接触特性已经成为提高探测器性能的关键问题。本文主要探讨了弱n型CdZnTe晶体(111)B面Ti/Au复合电极的欧姆接触性能,采用两步沉积工艺制备Ti/Au复合电极。通过AFM、FIB/TEM、XPS、I-V等测试方法研究了电极与CdZnTe的界面结构、化学成分和电学性能。结果表明,Ti过渡层的引入可以减轻和改善晶片抛光过程中形成的损伤层,增加了电极与晶体之间的欧姆特性。相比于CdZnTe (111)B面上的Cr/Au复合电极,Ti/Au复合电极的粗糙度更低、接触界面更平整,晶格失配层厚度也更低。Ti中间层促进了金/半界面的互扩散现象, 有利于增加黏附性和降低肖特基势垒,并且在Ti/Au复合电极与CdZnTe接触的界面上没有观察到氧元素的存在。I-V测试表明Ti/Au复合电极具有更加良好的欧姆特性和更低的肖特基势垒。     

Studies on electrical and the dielectric properties in MS structures

In this study, we investigated frequency dependent electrical and dielectric properties of metal-semiconductor (MS) structures using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics in the frequency range 100 kHz-10 MHz in the room temperature. The dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and ac electrical conductivity (σ_ac) were calculated from the C-V and G/ω-V measurements and plotted as a function of frequency. In general, ε′, ε″ and tan δ values decreased with increasing the frequency, while σ_ac increased with increasing frequency. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R_S-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies. Also, series resistance values decreased with increasing frequency. The experimental results show that both frequency dependent electrical and dielectric parameters were strongly frequency and voltage dependent.     

Analysis of current ‐ voltage ‐ temperature characteristics of In and Cu contacts on n‐type MoSe2 single crystals

The current voltage characteristics of In / Cu with n‐type MoSe₂ Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe₂ shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all the measured temperatures. The Cu ‐ nMoSe2 interface formed a Schottky junction diode with a good rectification ratio. The Schottky barrier height and the ideality factor thereby obtained were 0.72 eV and 1.45, respectively, at room temperature. Below room temperature, the barrier height and the ideality factor vary with decreasing temperature. The changes are significant at low temperatures. Barrier height inhomogeneities at the interface cause deviation in the zero‐bias barrier height and the ideality factor at low temperatures, and produce extra current such that I‐V characteristics remain consistent with the thermionic emission mechanism. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Isochronal Studies of α‐Si:H Crystallization and the Performance of it's Schottky Barriers

Hydrogenated amorphous silicon films (α‐Si:H) were crystallized employing a metal induced crystalline (MIC) technique. Structural changes during annealing these films at 300 °C for different periods (0‐300 minutes) were obtained by XRD. Al was used as a metal induced crystalline for α‐Si:H produced by ultra high vacuum (UHV) plasma enhanced chemical vapor deposition (PECVD). XRD shows that crystallization of the interacted α‐Si:H film underneath Al initiates at 300 °C for 15 minutes. A complete crystallization was obtained after annealing for 60 minutes. A gold dot was evaporated onto α‐Si:H films, which annealed for different periods to form Schottky barriers. Electrical properties of Au/α‐Si:H were calculated such as the ideality factor, n, barrier height, Φ_B, donor concentration, N_D, and the diffusion voltage, V_d, as a function of the annealing time of α‐Si:H films. All these parameters were carried out through the current voltage characteristics (J‐V) and the capacitance voltage measurements (C‐V). The results were presented a discussed on the basis of XRD performance and the thermionic emission theory.     

Investigation of metal–GaN and metal–AlGaN contacts by XPS depth profiles and by electrical measurements

Metal/GaN Schottky contacts have been studied by X-ray photoelectron spectroscopy (XPS). Au/GaN, Pt/GaN, Pd/GaN are sharp while Ti/GaN is diffuse with the following composition, starting from the surface: Ti+TiN, Ti+Ti_xGa_yN, Ti+Ti_xGa_yN+Ga, GaN+Ga. Au/AlGaN and Ni/AlGaN contacts are much broader than Au/GaN: Al and Ga are found more than 100 Å away from the interface. Schottky barrier height was measured for the Au/GaN, Pd/GaN, Pt/GaN, Au/AlGaN and Ni/AlGaN contacts.     

I–V characteristics and break down studies of Sb2O3 structures

I–V characteristics of sandwiched Al–Sb₂O₃–Al structures have been studied for different thicknesses. The current-voltage curves in general exhibit three regions, ohmic, non ohmic and breakdown regions. The breakdown voltage increases whereas the dielectric strength decreases with increase in Sb₂O₃ film thickness. The electrical breakdown studies have been done for dc and ac voltages and optical photomicrographs of breakdown patterns during different stages of voltage have been taken and the results are explained.     

Tunneling in sub-5 nm La2O3 films deposited by E-beam evaporation

We investigate the leakage current in ultrathin (sub-5 nm) La₂O₃ dielectric films deposited on n-Si (1 0 0) substrates by electron-beam evaporation and annealed in situ in ultra-high vacuum conditions. We show that simple tunneling models both for the direct and Fowler-Nordheim conduction regimes can accurately reproduce the measured current-voltage characteristics over a wide voltage range. In the latter regime, it is shown the importance of considering the series resistance effect to account for the shape of the characteristics. We propose a method to obtain the series resistance’s value based on the linearization of the Fowler-Nordheim plot. Some experimental features in combination with an exploratory analysis of the fitting parameters seem to indicate that the current flow through the structure is mostly localized, which is attributed to the existence of thickness non-uniformities in the oxide layer. In addition, we show that the application of electrical stress creates traps or defects within the insulator that leads to a progressive increase of the leakage current and to a change of the dominant conduction mechanism at the lowest biases.     

Electrical and optical properties of binary glasses from the arsenictelluriumselenium system

An investigation of binary glasses derived from the arsenicseleniumtellurium system is described in which measurements were made of d.c. conductivity over a range of temperatures, space charge limited current, density and absorption in the near infrared region. For the higher temperature region the electrical results were consistent with conduction being due to carriers excited into extended states. While conduction at lower temperatures may in some cases be due to carriers hopping in localized states at the band edges, an alternative approach in which the localized states were considered to act as donors and acceptors gave satisfactory agreement with the experimentally determined conductivity versus temperature and activation energy versus temperature relationships and with the value of the pre-exponental constant in the conductivity expression. An anomalous field dependence of conductivity was found for annealed specimens of two glasses and it is tentatively suggested that this is associated with the creation of an impurity band. Measurements of space charge limited current showed that gold gave ohmic contacts to the glass, whereas silver and copper did not. The measurements also provided evidence for the localized states having an exponential distribution. Changes of electrical properties and density as a function of glass composition are discussed in the light of possible structural changes taking place in the glasses. The absorption edges of the glasses in the infrared region were found to be exponential in form and had slopes that did not very greatly for the range of compositions studied.     

Influence of oxygen/argon ratio on structural,electrical and optical properties of Ag-doped ZnO thin films

Ag-doped ZnO (ZnO:Ag) thin films were deposited on quartz substrates by radio frequency magnetron sputtering technique. The influence of oxygen/argon ratio on structural, electrical and optical properties of ZnO:Ag films has been investigated. ZnO:Ag films gradually transform from n-type into p-type conductivity with increasing oxygen/argon ratio. X-ray photoelectron spectroscopy measurement indicates that Ag substitutes Zn site (Ag_Zn) in the ZnO:Ag films, acting as acceptor, and being responsible for the formation of p-type conductivity. The presence of p-type ZnO:Ag under O-rich condition is attributed to the depression of the donor defects and low formation energy of Ag_Zn acceptor. The I–V curve of the p-ZnO:Ag/n-ZnO homojunction shows a rectification characteristic with a turn-on voltage of ∼7 V.     

Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages

In this paper is presented a qualitative investigation upon the mechanisms that cause the shift of the electrical parameters in thin film transistors (TFT). The transistors are made of amorphous hydrogenated silicon (a-Si:H) as active semiconductor layer and substoichiometric silicon nitride (SiN) as gate insulator. The work refers to the degradation at room temperature and low positive and negative gate voltage stresses. The electrical parameters: threshold voltage (V_th), subthreshold swing (S) and flat-band voltage (V_fb) have been determined from the dependence of the drain current on gate voltage (I_d–V_g) and the dependence of the capacitance on the gate voltage (C–V_g) measurements as function of stress time and bias.     

Amorphous silicon diamond based heterojunctions with high rectification ratio

We have fabricated and characterized diamond based heterojunctions composed of homoepitaxial diamond (B-doped film: p type) and hydrogenated amorphous silicon (a-Si:H film: n-type). All devices include an intrinsic amorphous silicon interface (i-a-Si:H). (J–V) characteristics of a-Si:H heterojunctions measured from 300 K to 460 K present a very high rectification ratio (in the range 10⁸–10⁹) and a current density of 10 mA/cm² under 2 V of forward bias. The reverse current up to ? 4 V is below the detection limit in the whole temperature range. The devices present two regimes of operation indicating that more than one mechanism governs the carrier transport. These characteristics are compared with a Schottky barrier diode (SBD) using a tungsten carbide metal on top of the p-type diamond as a Schottky contact. The SBD device exhibits J–V characteristic with an ideality factor n close to one and the heterojunction follows this trend for low bias voltages whereas for bias voltage above 1 V a second regime with larger ideality factors n ~ 3.6 is observed. These results point out the prominent role of transport mechanisms at heterointerface between the a-Si:H layers and the p-type doped diamond which degrades the current injection. The breakdown voltage reached ? 160 V indicating the good quality of the deposited layers.     

Underlying reverse current mechanisms in a-Si:H p-i-n solar cell and compact SPICE modeling

The defect states in bulk of i-layer and at p⁺/i interface have been studied by using dark reverse current-voltage (J-V) measurements. The dark reverse current as a function of voltage has been analyzed on the basis of thermal generation of the carriers from mid-gap states in i-layer. Based on its behavior the thermal generation mechanism has been divided into two types. Thermal generation at lower bias (<5 V) shows V^1/2 behavior, whereas at higher bias follows an exponential dependence of voltage (>5 V). This was explained using a thermal generation zone at lower bias, which is a source of reverse currents, and its evolution towards p⁺/i interface with increasing voltage. The analytical result has shown that at lower reverse bias (V < 5 V) the defect states in the bulk of i-layer and at higher bias (V ∼ 25 V) the defect states at p⁺/i interface are contributing to the reverse currents. Reverse bias annealing (RBA) treatment which has been performed on these cells shows that a reduction of defect states more in the i-region near to the p⁺-layer and at p⁺/i interface as compared to the deep regions in bulk of i-layer. The calculated defect state density (DOS) is varying from its intrinsic value of 2.4 × 10¹⁷ cm⁻³ in the bulk of the i-layer up to 2.1 × 10¹⁹ cm⁻³ near and at p⁺/i interface. These values decrease to 7.1 × 10¹⁶ cm⁻³ and 2.7 × 10¹⁷ cm⁻³, respectively, in the samples annealed under reverse bias at 2 V. The bias dependent leakage current behavior has been modeled and implemented in simulation program with integrated circuit emphasis (SPICE) using simple circuit elements based on voltage controlled current sources (VCCS). Simulated and measured reverse leakage current characteristics are in reasonable agreement.     

I–V Characteristics of tris(2,4-pentanedionato)manganese(III) thin films

Amorphous thin films of tris(acetylacetonate)manganese(III) were deposited on Si(P) substrates by thermal sublimation in vacuum. The deposited films were probed with X-ray fluorescence. Their electrical properties were studied as insulators for Al/Mn(acac)₃/Si(P) metal–insulator–semiconductor devices. Those devices were characterized by the measurement of the gate-voltage dependence of their capacitance, from which the relative permittivity (RP) and density of the charges in the insulator were determined. It was found that values of the RP of tris(acetylacetonate)manganese(III) films grown on Si(P) wafers were in the range of 30–40, which can be find applications in gate related technological uses. The dc-electrical conduction in the complex film was studied at room temperature and in temperature range of (293–325 K). It was found that the data of the as-deposited films follow the trap-charge-limited space-charge-limited conductivity (TCL-SCLC) mechanism, while the data of the annealed sample in vacuum of about 10⁻³ Pa at about 100 °C for 10 min obey the Richardson–Schottky (RS) mechanism. The parameters of both mechanisms were determined. It was concluded that the density of charged defects in the insulating film is critically determined the mechanism of the current-transfer.     

Characteristics of Al/p‐Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes

Al/p‐Cu_0.5Ag_0.5InSe₂ polycrystalline thin film Schottky barrier diodes have been prepared. The current‐voltage, capacitance‐voltage and photores ponse have been investigated. Various important physical parameters of the sediodes were derived from these measurements.     

Electrical Conductivity of Tetrathiafulvalene-9-Dicyanomethylene-2,4,5,7-tetranitrofluorene(TTF-DT4-NF)

We deal with optical properties of TTF-DT₄NF together with electrical conductivity measurements made with rod-like samples carrying a silver paint contact at both ends. Schottky barrier formation was observed in each case, although strongly modified by tunneling carries across the only thin barriers formed due to a high impurity content of the samples. In the higher voltage range non-ohmic bulk conductivity behaviour is manifest.     

Space charge limited conduction in a-(Ge20Se80)1−xSnx thin films

The present paper reports the dc conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of (Ge₂₀Se₈₀)_1−xSn_x glassy alloys where 0 < x < 1. Current–voltage (I–V) characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields (E ∼ 10⁴ V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level is calculated. These results show that the effect of incorporation of Sn in the Ge–Se system is quite different at its low and high concentration. This peculiar role of third element Sn as an impurity in the pure binary Ge₂₀Se₈₀ glassy alloy is also discussed.     

Microstructure and percolation threshold characteristics of reactive sputtered Au-TiO2 granular composite films

The Au/TiO₂ composite films were prepared by using reactive co-sputtering technique. The size and shape of the embedded Au particles and the absorption spectra of the composite films were investigated by using SEM, XRD, and UV-VIS-NIR spectrophotometer, respectively. The average size of Au particles and the electrical conductivity decrease as the sputtering pressure increases. The normalized conductivity of the films deposited at five different pressures with the Au concentration in the range of 0.15-0.91 were measured. The percolation threshold increases from 0.21 to 0.90 as the sputtering pressure increases from 2 × 10⁻² Torr to 9.5 × 10⁻² Torr.     

Locating hot carrier degradation in asymmetric nDeMOS transistors by gated diode technique

In this paper, hot carrier degradation in asymmetric nDeMOS transistors is investigated. For the first time, we found that the worst hot carrier stress condition is at I_g,max, and not at I_b,max and HE stress conditions. The damage regions in transistors upon various hot carrier stress modes are located by using gated diode technique. It is found that the interface traps generation in the gate/n-type graded drain (NGRD) overlap and spacer oxide regions is the dominant mechanism of hot carrier degradation in asymmetric nDeMOS transistors upon various hot carrier stress modes. Furthermore, the bulk silicon damages locating at the p-well and NGRD regions during hot carrier stress must be taken into account, because they lead to a series of issues, such as the increase in I_off current, the off-state breakdown voltage decrease, and so on.     

Photovoltaic properties of sputtered silicon films

The photovoltaic properties of several 1 μm thick films of rf-sputtered amorphous Si (a-Si) sandwiched between lower Al electrodes and upper semitransparent Mo or Al electrodes have been investigated. After fabrication, the Al–Si–Al samples were annealed in vacuum at temperatures between 100 and 450°C. The spectral variation of the photoresponse in the wavelength region between 300 nm and 2 μm was measured. The results indicate that the optical gap of a-Si is 1.5 eV and the Schottky barrier height at the Al–a-Si interface is 0.75 eV. the current-voltage characteristics of these Schottky-type devices were investigated under illumination. Photovoltaic energy conversion efficiencies of up to 0.03% were observed for the 100 mW/cm² white light of a tungsten-halogen lamp.     

Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devices

Blue-green semiconductor laser diodes operating at room temperature are still the domain of wide bandgap II–VI compound semiconductors. CW operation at room temperature and hours of lifetime were reported. However, the conductivity control, defect generation and the ohmic contacts still need improvement. Therefore we focused our work on the MOVPE growth and the optimization of ZnMgSSe/ZnSSe/ZnSe heterostructures as well as on nitrogen doping of ZnSe. To verify the layer quality characterization was carried out by X-ray diffraction, electron probe microanalysis, electrical measurements and photoluminescence. ZnMgSSe/ZnSSe/ZnSe and ZnSSe/ZnSe quantum wells and superlattices were grown to investigate structural as well as interface properties. Electron beam and optical pumping was used to clarify the laser mechanism and to clarify the suitability of a MOVPE process to grow laser quality material. The electrical compensation of ZnSe doped with nitrogen is still controversially discussed whereas high n-type doping with chlorine was reproducible achieved. ZnSe: N doped at different growth conditions (II/VI ratio, growth temperature, nitrogen supply) using N₂ excited in a plasma source or by the use of nitrogen containing precursors was investigated to study the compensation mechanisms.