Preparation and the proton conductivity of chitosan/poly(vinyl phosphonic acid) complex polymer electrolytes

This study describes the preparation and proton conductivity of novel polymer complex electrolytes consisting of chitosan and poly(vinylphosphonic acid), PVPA. The materials were prepared via in situ polymerization of vinyl phosphonic acid in the presence of chitosan at various monomer feed ratios with respect to d-glucosamine repeat unit. Homogeneous materials were produced and they were extensively characterized for their compositions by elemental analysis (EA), thermal properties by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) and the morphology by X-ray diffraction (XRD). The complexation of chitosan/PVPA via proton exchange reactions was confirmed by Fourier transform infrared (FT-IR). The methanol permeability of CHPVPA₅ was lower than Nafion^® 115. The water/methanol uptake was measured and the results showed that solvent absorption of the materials increased with increasing PVPA content in the matrix. The temperature dependence of the proton conductivity of the complex electrolytes follows VTF behavior at higher x. Proton conductivity of CHPVPA₅ was measured to be approximately 3 × 10⁻⁵ S/cm at 120 °C in the anhydrous state.     

Sodium tracer diffusion in glasses of the type (CaO·Al2O3)x(2 SiO2)1−x

Tracer diffusion coefficients of the radioactive isotope Na-22 were measured in glasses of the type (CaO·Al₂O₃)_x(2 SiO₂)_1−x to study the diffusion of sodium as a function of glass composition, x, temperature and initial water content. The diffusion of Na-22 in glasses diffusion-annealed in dry air can always be well described by a single tracer diffusion coefficient, but sometimes not in samples annealed in common air. It was found that the sodium tracer diffusion coefficient decreases by about six orders of magnitude when the glass composition x changes from 0 to 0.75 at 800 °C. The temperature dependence of the diffusion of sodium seems to decrease as the silica content increases. Variations of the initial water content in some of the glasses investigated did not very significantly influence the rate of the tracer diffusion of sodium.     

Studies of some mechanical and optical properties of: (70 − x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Specimens of the glassy system: (70 − x)TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by the melt-quenching. An ultrasonic pulse-echo technique was employed, at 5 MHz, for measuring: the ultrasonic attenuation, longitudinal and shear wave velocities, elastic moduli, Poisson ratio, Debye temperature and hardness of the present glasses. It is found that the gradual replacement of TeO₂ by Li₂O in the glass matrix up to 30 mol% leads to decrease the average crosslink density and rigidity of prepared samples which affects the properties, i.e., the hardness, ultrasonic wave velocities and elastic moduli are decreased, while the Poisson ratio and the ultrasonic attenuation are increased. Also, optical absorption spectra were recorded in the range, 200-800 nm for these glasses. The obtained results showed that a gradual shift in the fundamental absorption edge toward longer wavelengths occurred. Values of both of the optical energy gap, E_opt, and width tails, ΔE, are determined. It is observed that E_opt is decreased and ΔE increased with the increase of Li₂O in the glass matrix up to 30 mol%. The compositional dependences of the above properties are discussed and correlated to the structure of tested glasses.     

The glass transition temperature and infrared absorption spectra of: (70−x)TeO2 + 15B2O3 + 15P2O5 + xLi2O glasses

Glasses of the system: (70−x) TeO₂ + 15B₂O₃ + 15P₂O₅ + xLi₂O, where x = 5, 10, 15, 20, 25 and 30 mol% were prepared by melt quench technique. Dependencies of their glass transition temperatures (T_g) and infrared (IR) absorption spectra on composition were investigated. It is found that the gradual replacement of oxides, TeO₂ by Li₂O, decreases the glass transition temperature and increases the fragility of the glasses. Also, IR spectra revealed broad weak and strong absorption bands in the investigated range of wave numbers from 4000 to 400 cm⁻¹. These bands were assigned to their corresponding bond modes of vibration with relation to the glass structure.     

The comparative structure, properties, and ionic conductivity of LiI + Li2S + GeS2 glasses doped with Ga2S3 and La2S3

The well known and characterized fast ion conducting (FIC) LiI + Li₂S + GeS₂ glass-forming system has been further optimized for higher ionic conductivity and improved thermal and chemical stability required for next generation solid electrolyte applications by doping with Ga₂S₃ and La₂S₃. These trivalent dopants are expected to eliminate terminal and non-bridging sulfur (NBS) anions thereby increasing the network connectivity while at the same time increasing the Li⁺ ion conductivity by creating lower basicity [(Ga or La)S_4/2]⁻ anion sites. Consistent with the finding that the glass-forming range for the Ga₂S₃ doped compositions is larger than that for the La₂S₃ compositions, the addition of Ga₂S₃ is found to eliminate NBS units to create bridging sulfur (BS) units that not only gives an improvement to the thermal stability, but also maintains and in some cases increases the ionic conductivity. The compositions with the highest Ga₂S₃ content showed the highest T_gs of ∼325 °C. The addition of La₂S₃ to the base glasses, by comparison, is found to create NBS by forming high coordination octahedral LaS₆³⁻ sites, but yet still improved the chemical stability of the glass in dry air and retained its high ionic conductivity and thermal stability. Significantly, at comparable concentrations of Li₂S and Ga₂S₃ or La₂S₃, the La₂S₃-doped glasses showed the higher conductivities. The addition of the LiI to the glass compositions not only improved the glass-forming ability of the compositions, but also increased the ionic conductivity glasses. LiI concentrations from 0 to 40 mol% improved the conductivities of the Ga₂S₃ glasses from ∼10⁻⁵ to ∼10⁻³ (Ω cm)⁻¹ and of the La₂S₃ glasses from ∼10⁻⁴ to ∼10⁻³ (Ω cm)⁻¹ at room temperature. A maximum conductivity of ∼10⁻³ (Ω cm)⁻¹ at room temperature was observed for all of the glasses and this value is comparable to some of the best Li ion conductors in a sulfide glass system. Yet these new compositions are markedly more thermally and chemically stable than most Li⁺ ion conducting sulfide glasses. LiI additions decreased the T_gs and T_cs of the glasses, but increased the stability towards crystallization (T_c − T_g).     

Single crystals growth and absorption spectra of Cr-doped Al2−xInx(WO4)3 solid solutions

The growth conditions of pure and Cr³⁺-doped Al_2−xIn_x(WO₄)₃ single crystals, using top-seeded solution growth (TSSG) technique, have been studied. A series of experiments have been performed at different In concentrations, x=0.0, 0.3, 0.6 and 1.0, as well as at different concentrations of Cr³⁺ (0.0, 0.1, 0.2, 0.5 and 1.0) in at% with respect to the initial total concentration of Al and In in the starting solutions. The basic parameters of the crystal growth are varied over a wide range: seed orientation, speed of rotation, axial and radial temperature differences in the solution and the solution cooling rate. The investigated relations between the basic defects in the crystals and these parameters result in determination of the optimal conditions for growth of defect-free crystals. Distribution coefficients of Al, In and Cr have been determined, so the growth of crystals with given compositions is possible. Values of Dq/B (crystal field strength) for the various crystal compositions are calculated from the optical absorption spectra. The calculated values show that the discussed solid solutions have weak crystal field and are suitable for media with broadband emission spectra.     

Structure and properties of glasses in the MI + M2S + (0.1Ga2S3 + 0.9GeS2), M = Li, Na, K and Cs, system

The structure and properties of glasses in the MI + M₂S + (0.1Ga₂S₃ + 0.9GeS₂), M = Li, Na, K and Cs, system were studied using Raman, IR spectroscopy, DSC and density measurements to help better understand the ionic transport in these glasses. The glass forming ranges of these ternary glasses were compared to those of the binary alkali sulfide and germanium sulfide systems. The more extensive glass forming range in the Na₂S system was used to examine the more extensive changes of structure and properties of these glasses as a function of Na₂S content. As expected, non-bridging sulfurs (NBS) form with the addition of alkali sulfide. Unlike their oxide counterparts, however, the alkali sulfide doped glasses appear to support longer-range super-structural units. For example, evidence that the adamantine-like structure exists in the K₂S and Cs₂S modified glasses is found in the Raman spectra of the glasses. The structural role of the alkali iodide addition was also explored since the addition of alkali iodide helps to improve the conductivity. For most of these glasses, as observed in many other oxide glasses, the added MI dissolves interstitially into the glass structure network without changing the alkali sulfide network structure. In 0.6Na₂S + 0.4(0.1Ga₂S₃ + 0.9GeS₂) glasses, however, the added NaI may affect the glass structure as it causes systematic changes in the frequency of the Ge-S network mode as seen in the Raman spectra.     

Three-dimensional structure of fast ion conducting 0.5Li2S + 0.5[(1 − x)GeS2 + xGeO2] glasses from high-energy X-ray diffraction and reverse Monte Carlo simulations

A high-energy X-ray diffraction study has been carried out on a series of 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses with x = 0.0, 0.1, 0.2, 0.4, 0.6 and 0.8. Structure factors were measured to wave vectors as high as 30 Å⁻¹ resulting in atomic pair distribution functions with high real space resolution. The three dimensional atomic-scale structure of the glasses was modeled by reverse Monte Carlo simulations based on the diffraction data. Results from the simulations show that at the atomic-scale 0.5Li₂S + 0.5[(1 − x)GeS₂ + xGeO₂] glasses may be viewed as an assembly of independent chains of (Li^+-S)₂GeS_2/2 and (Li^+-O)₂GeO_2/2 tetrahedra as repeat units, where the Li ions occupy the open space between the chains. The new structure data may help understand the reasons for the sharp maximum in the Li⁺ ion conductivity at x ∼ 0.2.     

Spectrometric and ellipsometric studies of (1 − x)TiO2 · xLn2O3 (Ln = Nd, Sm, Gd, Er, Yb) thin films

Spectrometric and ellipsometric studies of (1 − x)TiO₂ · xLn₂O₃ (Ln = Nd, Sm, Gd, Er, Yb; x = 0.33, 0.5) thin films at room temperature were performed. The obtained dispersion dependences of refractive indices are successfully described by the optical-refractometric relation. The dependence of optical pseudogap and refractive indices on composition and molar mass of the films is investigated. The influence of compositional disordering on the energy width of the exponential absorption edge is studied.     

Synthesis and Judd-Ofelt analysis of a sol-gel material doped with a Ln2(Benzoate)6(Phen)2 (Ln = Er/Yb) complex

In this work, we have prepared a sol-gel derived hybrid material directly doped with Er_1.4Yb_0.6(Benzoate)₆(Phen)₂ (Phen = 1,10-phenanthroline) complex, which was reported with intramolecular Yb-Er energy-transfer process in our previous work. The infrared (IR) spectra of the pure complex and hybrid gel material were investigated. The NIR photoluminescence (PL) spectrum of hybrid gel material shows strong characteristic emission of Er³⁺ with broad full width at half-maximum (FWHM) of 70 nm. Judd-Ofelt theory was used in order to analyze the optical properties of Er³⁺ ions in the hybrid gel material.     

Formation of GaN nanodots on Si (1 1 1) by droplet nitridation

GaN nanodots (NDs) are obtained by Ga metallic droplet formation on Si (1 1 1) substrates followed by their nitridation. The size and density of Ga droplets and GaN NDs can be controlled by varying the growth temperature within the range 514–640 °C. Atomic force microscopy (AFM) investigation of Ga droplets shows an increase in the average diameter with temperature. The average diameter of GaN NDs increases with growth temperature while their density decreases more than one order of magnitude. In addition, the formation of a GaN crystallite rough layer on Si, in-between NDs, indicates that a spreading mechanism takes place during the nitridation process. High-resolution transmission electron microscopy (HRTEM) is used for the investigation of shape, crystalline quality and surface distribution of GaN dots. X-ray photoelectron spectroscopy (XPS) results confirm that Ga droplets that are transformed into GaN NDs spread over the sample surface during nitridation.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Preparation and characterization of glasses in the Ag2S + B2S3 + GeS2 system

The glass forming range of the Ag₂S + B₂S₃ + GeS₂ ternary system was investigated for the first time and a wide range of ternary glasses were obtained. The Archimedes’ method was used to determine the densities of the Ag-B-Ge glasses. The thermal properties of these thioborogermanate glasses were studied by DSC and TMA. The Raman, IR and NMR spectroscopy were used to explore the short-range order structure of the binary (Ag-B) and (Ag-Ge) and ternary (Ag-B-Ge) glasses. The results show the presence of bridging sulfur tetrahedral units, GeS_4/2 and AgBS_4/2, and trigonal units, BS_3/2, in the ternary glasses. Non-bridging sulfur units, AgSGeS_3/2 and Ag₃B₃S₃S_3/2 six membered rings, are also observed in these glasses at higher Ag₂S modification levels because the further addition of Ag₂S results in the degradation of the bridging structures to form non-bridging structures. The NMR studies show that Ag₂S goes into the GeS₂ subnetwork to form Ag₃S₃GeS_1/2 groups before going to the B₂S₃ subnetwork. In doing so, it is suggested that B₁₀S₂₀ supertetrahedra exist in Ag₂S + B₂S₃ and Ag₂S + B₂S₃ + GeS₂ glasses. Significantly B-S-Ge bonds form in the B₂S₃ + GeS₂ glasses, whereas they appear to be absent in the ternary glasses. From these observations, a structural model for these glasses has been developed and proposed.     

Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (1 0 0) by MOVPE

We investigate the optical properties of m-plane InGaN/GaN multiple quantum well grown on LiAlO₂ substrate by metal organic vapor phase epitaxy. Polarization-dependent photoluminescence and polarization-dependent photoluminescence excitation measurements have been performed at low temperature to study the optical absorption and emission characteristics. The main emission band possesses large polarization anisotropy which may be attributed to the anisotropic biaxial strain. We found the optical emission is not influenced by the polarization-induced electric field from the excitation-dependent photoluminescence measurements. From our results, we attribute the low-temperature emission band around 3.2 eV to interband transition in the quantum well. Besides, the mechanism of the main emission band is associated with interband transition and subsequent carrier localization. The realization of good-quality non-polar GaN-based devices can then be expected in near future.     

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.     

Synthesis,characterization and growing mechanism of monodisperse Fe3O4 microspheres

Monodisperse Fe₃O₄ microspheres assembled by a number of nanosize tetrahedron subunits have been selectively synthesized through the hydrothermal process. The synthesized Fe₃O₄ microspheres have good dispersibility. The subunits made up of microspheres were uniform in size and like-tetrahedron in shape. The average diameter of each Fe₃O₄ microsphere is about 50–55 μm. The length of each edge of tetrahedron is about 100 nm. A series of experiments had been carried out to investigate the effect of reductant, precipitator and reaction time on the formation of Fe₃O₄ microsphere and tetrahedron subunits. The results show that ascorbic acid as reductant and urea as precipitator supplied a relatively steady environment during the synthesis process and led to the formations of Fe₃O₄ tetrahedron subunit and monodisperse Fe₃O₄ microspheres. As the reaction time increased from 3 to 24 h, the Fe₃O₄ microspheres tended towards dispersion and becoming large in size from 10–20 to 50–55 μm, and the subunits formed Fe₃O₄ microspheres that varied from spheroid to tetrahedron and from a small nanoparticle (20–30 nm) to a large one (90–110 nm). A reasonable explanation for the formations of the Fe₃O₄ microsphere and the tetrahedron subunit was proposed through Ostwald ripening and the attachment growth mechanism, respectively.     

Study on the growth and interfacial strain of CoFe2O4/BaTiO3 bilayer films

CoFe₂O₄/BaTiO₃ bilayer films were epitaxially deposited on SrTiO₃ substrates by laser molecular beam epitaxy (LMBE). The growth process of the bilayer films was in-situ monitored by reflection high-energy electron diffraction (RHEED). Sixty nanometer thick-BTO layer was firstly fabricated in a layer-by-layer growth mode with an atomic smooth surface. CFO films with a varying thickness ranging from 5 to 60 nm were subsequently deposited on BTO-coated STO substrates. The different growth behaviors of CFO films were observed due to the lattice mismatch strain. Between two short stages of the growth mode transforming, a long duration with Stransky and Krastonov growth mode was maintained. Strainfully relaxed CFO film in the island growth mode was finally formed. High-resolution X-ray diffraction (HRXRD) was used to further analyze the strain effect. It was found that the tensile stress imposed on BTO by CFO was strengthened with increasing the thickness of CFO films, which could lessen the distortion of BTO by counteracting the compressive stress caused by STO substrates. The strengthened tensile stress weakened the ferroelectric property of BTO films by reducing structural tetragonality, which was demonstrated by polarization-electric (P-E) measurement.     

Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (1 1 1) surfaces

We report on growth-mode transitions in the growth of SrRuO₃ thin films on atomically flat Ti⁴⁺ single-terminated SrTiO₃ (1 1 1) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit cells, the dominant growth mode changes from island to layer-by-layer for the growth rate of 0.074 unit cells/s and the growth temperature of 700 °C. Moreover, in the course of growing SrRuO₃ films, the governing growth mode of interest can be manipulated by changing the growth temperature and the growth rate, which change allows for the selection of the desired layer-by-layer mode. The present study thus paves the way for integrations of SrRuO₃ thin layers into (1 1 1)-orientated oxide heterostructures, and hence multi-functional devices, requiring control of the sharp atomic-level interfaces and the layer-by-layer growth mode.