Oxidation of tungsten single crystals in the presence of a high-electric field

The effects of high-electric fields on oxidation of tungsten single crystals in 6 × 10^?4 torr of oxygen at 1200–1500 °K were studied by field emission and transmission electron microscopy. Exposure of field emitters to oxygen in the absence of a field resulted in the build-up of emitter tips. Oxidation under the application of a negative or positive field, on the other hand, involved plane faceting and formation of oxide crystallites. Plane faceting was recognized to occur on the {111} and the {112} regions, showing the facetings of the {111} and the {112} planes into the {110} planes, whereas, crystallite formation seemed to take place selectively on the {100} regions. It was suggested by field emission microscopy that negative fields have an additional effect which causes the growth of an oxide crystal on the (110) plane. Transmission electron microscopy of an emitter oxidized in a negative field actually revealed a tiny oxide crystal with a size of ～ 300 Å grown on the developed (110) plane. The crystal exhibited a triangular shadow image strongly indicating an external pyramid-like form.     

hBN-LiH/hBN-Li_3N-B体系合成cBN的赋色过程研究

在高温高压条件下,用hBN-LiH和hBN-Li3N-B为初始材料均可以合成出黑色cBN晶体。拉曼光谱测试结果表明,cBN晶体颜色变黑的原因是晶体中多余B原子的存在造成的。在hBN-Li3N-B体系中,晶体内部有明显的三角形阴影形成,表明从晶体表面的中心到顶角间B原子的含量较多,从表面中心到棱边B原子的含量逐渐减少。而在hBN-LiH体系中所得到的晶体颜色从黑色透明直接变成黑色不透明状态,晶体内部没有出现三角形阴影,表明晶体中作为杂质的B原子分布比较均匀。此两种情况说明,B作为杂质原子进入cBN晶体中可以有两种分布情况,一是居中对称分布,二是均匀分布,从晶体的生长环境和自身的排杂能力方面分析了晶体为什么会出现上述现象。     

On the theory of the linear electro-optical effect in cubical crystals

The linear electro-optical effect in cubical crystals of acentric classes is considered by an approximate covariant method. Simple analytic expressions for the induced optic axes and for the eigenvalues and eigenvectors of the inverse dielectric tensor are obtained for all directions of the electric field in these crystals. The method used enables one to determine the above quantities with a high degree of accuracy. The cases where the electric field rotates in planes orthogonal to the crystallographic directions and in the planes of symmetry of the crystal are considered in detail.     

高温高压下掺硼宝石级金刚石单晶生长特性的研究

本文在5.1—5.6 GPa,1230—1600℃的压力、温度条件下,以FeNiMnCo作为触媒,进行单质硼添加宝石级金刚石单晶的生长研究.借助于有限元法,对触媒内的温度场进行模拟.研究得到了FeNiMnCo-C-B体系下,金刚石单晶生长的P-T相图.该体系下合成金刚石单晶的最低压力、温度条件分别为5.1 GPa,1230℃左右.研究发现,在单晶同一{111}扇区内部,硼元素呈内多外少的分布规律.有限元模拟结果给出,该分布规律是由在晶体生长过程中,{111}扇区的增长速度逐渐减小所致.{111}晶向的晶体生长实验结果表明,硼元素优先从{111}次扇区进入晶体.研究发现,这是该扇区增长速度相对较快,硼元素扩散逃离可用时间短导致的.另外,同磨料级掺硼金刚石单晶生长相比,对于温度梯度法生长掺硼宝石级金刚石单晶,由于晶体的增厚速度较慢,即使硼添加量相对较高,也可以实现表面无凹坑缺陷的优质金刚石单晶的生长.     

立方氮化硼晶体的杂质及颜色

 讨论了人工合成立方氮化硼晶体中的杂质与晶体颜色之间的关系，提出了cBN的赋色原因和机制。     

Crystal forms of hillocks and voids formed by electromigration on ultrapure gold and silver wires

Hillocks and voids (vacancy crystals) which were formed by electromigration on ultrapure gold and silver wires, showed only the combined crystal forms {111} and {100}. These planes are identical with the equilibrium planes G_I, calculated by Stranski and Kaishew for nonpolar substances under the assumption of only nearest neighbor interaction. Hillock and void nucleation occurred on crystal imperfections (heterogeneous nucleation). Hillocks and vacancy crystals (voids) on gold showed twin formation obeying the spinel law. Dedicated to Professor I. N. Stranski on the occasion of his 80th birthday.     

Transformation of indices of planes and directions in twinned crystals

The transformation formulae for indices of planes and directions in twinned crystals are computed for the general case of an arbitrary crystal system. Using the notation of tensor calculus all the formulae are obtained in a relatively simple form and can be used for the interpretation of X-ray diffraction patterns and electron microscopy diffraction patterns as well as in other problems concerning twinning.     

Electro-optic characterization of tetragonal (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals by a modified Sénarmont setup

The refractive indices of tetragonal (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) single crystals were measured with a prism coupler and their linear electro-optic (EO) properties were investigated from 20 to 80 °C by the automated scanning Sénarmont system with an ac field. The composition and temperature effect on the EO coefficients were also discussed. It has been found that their EO coefficients are much larger than that of widely used LiNbO₃ single crystal and the calculated half-wave voltages are also much lower, which enable the operation at lower voltages and the smaller device dimensions. Since the excellent EO properties are very stable and such high quality single crystals with large-size have been obtained, the PMN-xPT single crystals are a very promising candidate for EO modulation applications. By linking to the polarization-related quadratic EO coefficients, we find that the linear EO properties are related with the spontaneous polarization and dielectric constants.     

Crystallographic anisotropy in chemisorption: Nitrogen on tungsten single crystal planes

A molecular beam technique for the determination of sticking probabilities and surface coverages was used in earlier work to investigate the adsorption of nitrogen on tungsten {110}, {111} and {100} single crystal planes. In the present paper these studies have been extended to the {310}, {320} and {411} planes. Absolute sticking probabilities and adatom surface coverages are reported for crystal temperatures between 90 K and 960 K. Crystallographic anisotropy in this system is exemplified by zero coverage sticking probabilities with the crystal at room temperature: {110}, 1̃0^?2; {111}, 0.08; {411}, 0.4; {100}, 0.59; {310}, 0.72; {320}, 0.73. Results for planes on the [001] zone are quantitatively described by a general model developed for adsorption on stepped planes as an extension to the precursor-state order-disorder model for adsorption kinetics of King and Wells. It is shown that nitrogen dissociation only takes place at vacant pairs of {100} sites, but that subsequently the chemisorbed adatoms so formed may migrate out onto {110} terraces. The results are critically analysed in terms of the available LEED and work function data for nitrogen on tungsten single crystal planes, and the general model developed by Adams and Germer.     

Growth of nano-crystalline diamond on single-crystalline diamond by CVD method

Nanocrystalline (NC) diamond films are grown by chemical vapor deposition on various single crystal diamond faces. Under conditions of NC diamond growth, the growing filmmorphology is reduced to two planes: {100} and {111}. The {100} planes are smooth and homoepitaxial layerby-layer growth occurs on them, whereas the NC film formed by twin crystalliteswith sizes of several tens and hundreds nanometers grows on {111} planes. Nitrogen impurity sharply increases the diamond growth rate.     

Study on measurement of linear electro-optic coefficient of a minute irregular octahedron cBN wafer

The cubic boron nitride (cBN) is a kind of artificial electro-optic (EO) crystal, and we have not found any relative reports so far. Because the artificial synthetic cBN wafers are very small and hard, the wafers cannot be cut into rectangular slabs. The polarizer-sample-λ/4 retardation plate (compensator)-analyzer (PSCA) transverse EO modulator has to be adjusted to the minute irregular octahedron of cBN wafers. When the applied voltage is along [1 1 1] direction of the wafer, due to refraction, the angle between the incident beam direction and the (1 1 1) plane (top or bottom plane) of the wafer should be 25.4°, and the angle between the polarization direction of the polarizer and the plane of incidence should be 50.8° by calculation, respectively. The half-wave voltage of the cBN sample was obtained for the first time, by means of detection of the output optic signals from the modulator with and without an applied electric field on the sample, respectively. Furthermore, the linear EO coefficient was obtained, . The analysis of the experimental resulting error was carried out.     

Hardness and slip systems of orthorhombic hen egg-white lysozyme crystals

Hardness and slip systems by an indentation method were investigated on different habit planes of orthorhombic hen egg-white lysozyme (O-HEWL) crystals containing water. A dependence of the hardness on the water-evaporation time exhibits three stages as incubation, transition and saturated ones, as tetragonal (T)-HEWL crystals reported previously. The hardness values of (1 1 0), (0 1 0) and (0 1 1) habit planes of O-HEWL in the incubation stage or wet condition exhibits 6, 8 and 10 MPa, respectively. The hardness depends on indented planes but it is independent of the air-humidity and crystal volumes. These values correspond to the intrinsic hardness for O-HEWL crystals containing water. In the incubation stage, the slip traces are clearly observed around the indentation mark and the corresponding six kinds of slip systems are identified to be {0 1 1}<1 0 0>, {1 1 0}<1 1 0>, {0 1 1}<0 1 1>, {1 1 0}<0 0 1>, {1 0 0}<0 0 1> and {0 1 0}<0 0 1>.     

CVD金刚石薄膜孪晶形成的原子机理分析

采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、晶界分布和表面形貌. 研究了一阶孪晶在金刚石晶体{111}面生长的原子堆垛过程. 结果表明，由于一阶孪晶〈111〉60°的取向差关系以及{111}面的原子堆垛结构，使{111}面上容易借助碳原子的偏转沉积产生一阶孪晶. 低甲烷浓度时，碳原子倾向于在表面能较低的{111}面沉积，为孪晶的形成提供了便利，且高频率孪晶使薄膜织构强度减弱. 甲烷浓度升高使生长激活能较小的{001}面成为主要前沿生长面，因而只有〈001〉晶向平行薄膜法向的晶粒能够不断长大，因此孪晶形核概率明显减小. 另外，在薄膜中发现二阶孪晶，并对二阶孪晶的形成进行了分析. 关键词： 金刚石薄膜 孪晶 原子机理 取向差     

Magnetoelectric effect in an XY-like spin glass system Ni{x}Mn{1-x}TiO{3}

Magnetoelectric (ME) properties were investigated for an XY-like spin glass (SG) system, Ni{x}Mn{1-x}TiO{3} with an ilmenite structure. The ME effect is usually observed in systems with peculiar couplings between a crystal lattice and a magnetic order. Nonetheless, we found an antisymmetric ME effect with nonzero ME tensor elements below T{ME}=8-10 K in samples showing SG transitions. At T{ME}, no specific heat anomaly was observed, suggesting the absence of long-range magnetic order. We discuss the origin of the ME effect in the XY-like SG system in terms of an alignment of toroidal moments.     

Si{111}晶面粒子堵塞坑的新现象

本文报道了从粒子背散射堵塞效应的实验中所发现的单晶Si的{111}晶面粒子堵塞坑的新现象。单晶Si的{111}晶面有两个面间距d_{(111)^(a)和d(111)^(b),而{110}晶面只有一个面间距d(110)。由此导致两者的堵塞坑是不同的,我们已从α粒子和质子的Si单晶堵塞效应的实验得到了证实。并由此估计了d(111)^(a)和d(111)^(b)以及d(110)的2ψ1/2角。据作者了解,到目前为止,国内外还没有人发现此现象。此现象的发现对复杂晶体的堵塞和沟道效应的研究开阔了前景。 关键词：}     

Peculiarities of spontaneous crystallization of cubic boron nitride single crystal powders in the Li-B-N (H,Be) system

Abstract

We have investigated the effect of beryllium additions on the kinetics of conversion of hexagonal graphite-like BN to cubic BN (hBN → cBN) as well as on the linear rate of cBN crystal growth in a Li-B-N (H, Be) system. Experiments were performed in the temperature range 1940-2080K at a pressure of 4.3GPa. With the addition of 0.25 and 0.50wt.% beryllium the activation energy of the cBN formation process is found to be 45.8 and 42.0kJ/mol, respectively. The resulting crystals showed p-type conductivity. The activation energy of the impurity carriers for the samples with 0.25 and 0.50 wt.% beryllium additions equalled 0.22 and 0.17eV, respectively.     

大颗粒立方氮化硼单晶的合成

 在Mg-B-N体系中通过控制立方氮化硼晶体的成核率及生长速度，在4.5~6.0 GPa、1 500~1 900 ℃的高压高温条件下，在几分钟时间内，成功地获得了粒径达毫米量级的立方氮化硼单晶体，其最大单晶粒径达1.6 mm。研究了该体系中立方氮化硼单晶的生长特性，讨论了该种单晶体在Mg-B-N体系中的生长机制。     

In situ infrared spectroscopic study of cubicboron nitride thin film delamination

This paper investigates the procedure of cubic boron nitride （cBN） thin film delamination by Fourier-transform infrared （IR） spectroscopy. It finds that the apparent IR absorption peak area near 1380cm^-1 and 1073 cm^-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN, respectively, increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation. The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination, which suggests that the relaxation of the turbostratic BN （tBN） layer from the compressed condition is also hysteretic to film delamination. Moreover, cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN（amorphous BN）/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

The topography of nickel crystals during the reaction towards Ni(CO)4; A field ion microscope study

The structural aspect of the formation of Ni(CO)₄ by the reaction of CO with solid nickel has been studied. The nickel initial state was a nearly hemispherical single crystal as prepared by field evaporation of a nickel field emitter tip. Field-free reaction of CO with the clean nickel surface took place at pressures up to 2 mbar, reaction times up to 45 h, and at a temperature of 373 K, which as a result from work by others was found optimum for highest rates of Ni(CO)₄ formation. Neon field ion imaging at 80 K after reaction with CO showed the crystal always in an intermediate state, which had the features: (1) Areas of {;111} were increased; (2) at half angles between a central (111) and peripherical {111} planes there were {110} planes flanked by {210}, and {100} flanked by {511}, respectively; (3) with the exception of the planes mentioned in feature (2), the remaining surface area was more than mono-atomically stepped. From these results and in accordance with the theory of crystal growth (Kossel, Stranski) and the theory of crystal dissolution (Lacmann, Franke, Heimann) a pure octahedron is expected to be the final state of the crystal. This implies that nickel atoms removed by the reaction are most frequently taken from 〈110〉 atom chains of the {111} planes.