High-efficiency erbium ion luminescence in silicon nanocrystal systems

The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically completely transferred to Er³⁺ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 μm. Possible reasons for the high excitation efficiency of the Er³⁺ ions are discussed, and the conclusion is drawn that the F?rster mechanism is dominant in the energy transfer processes occurring in these structures. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 105–109. Original Russian Text Copyright ? 2004 by Kashkarov, Kamenev, Lisachenko, Shalygina, Timoshenko, Schmidt, Heitmann, Zacharias.     

Energy transfer from the host to Er<Superscript>3+</Superscript> dopants in semiconductor SnO<Subscript>2</Subscript> nanocrystals segregated in sol–gel silica glasses

Undoped and Er³⁺-doped glass–ceramics of composition (100−x)SiO₂–xSnO₂, with x = 5 or 10 and with 0.4 or 0.8 mol% of Er³⁺ ions, were synthesised by thermal treatment of precursor sol–gel glasses. Structural studies were developed by X-Ray Diffraction. Wide band gap SnO₂ semiconductor quantum-dots embedded in the insulator SiO₂ glass are obtained. The mean radius of the SnO₂ nanocrystals, ranging from 2 to 3.2 nm, is comparable to the exciton Bohr radius. The luminescence properties have been analysed as a function of sample composition and thermal treatment. The results show that Er³⁺ ions are partially partitioned into the nanocrystalline phase. An efficient UV excitation of the Er³⁺ ions by energy transfer from the SnO₂ nanocrystal host is observed. The Er³⁺ ions located in the SnO₂ nanocrystals are selectively excited by this energy transfer mechanism. On the other hand, emission from the Er³⁺ ions remaining in the silica glassy phase is obtained by direct excitation of these ions.     

Erbium excitation in a SiO<Subscript>2</Subscript>: Si-nc matrix under pulsed pumping

The photoluminescence of Er³⁺ ions in a SiO₂ matrix containing silicon nanocrystals 3.5 nm in diameter is studied under resonant and nonresonant pulsed pumping with pulses 5 ns in duration. The effective erbium excitation cross section under pulsed pumping, σ_eff = 8.7 × 10^?17 cm₂, is close to that for nanocrystals. Comparison of the erbium photoluminescence intensity obtained for a SiO₂ matrix with and without nanocrystals made it possible to determine the absolute concentration of optically active nanocrystals capable of exciting erbium ions, the concentration of optically active erbium, and the average number of erbium ions excited by one nanocrystal. The study revealed that excitation transfer from one erbium ion to another is a relatively slow process, which accounts for the low efficiency of erbium ion excitation under pulsed pumping in a SiO₂ matrix containing silicon nanocrystals.     

Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation

The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO₂) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er³⁺ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er³⁺ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO₂ structures. The Er³⁺ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er³⁺ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO₂ structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 μm.     

Properties of erbium luminescence in bulk crystals of silicon carbide

The infrared luminescence of Er³⁺ ions has been studied in bulk crystals of silicon carbide 6H-SiC doped with erbium in the process of their growth. The erbium centers of different symmetry in the crystals are revealed by the EPR technique. A number of intense luminescence bands of erbium ions are observed at a wavelength of about 1.54 μm. The luminescence can be excited by the light with quantum energies above and below the band gap of SiC. It is found that the luminescence exhibits unusual temperature behavior: as the temperature increases, the luminescence intensity abruptly rises starting with 77 K, passes through a maximum at ∼240 K, and, in the vicinity of ∼400 K, decreases down to the values observed at 77 K. The activation energies for the flare-up and quenching of the Er³⁺ luminescence are estimated at E _A ≈130 and ≈350 meV, respectively. The mechanisms of the flare-up and quenching of the Er³⁺ luminescence in SiC are discussed. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 5, 2000, pp. 809–815. Original Russian Text Copyright ? 2000 by Babunts, Vetrov, Il’in, Mokhov, Romanov, Khramtsov, Baranov.     

Kinetics of luminescence of interface defects and resonant Er ions in nanostructured SnO2:SiO2

Silica glass with SnO₂ nanocrystals and Er³⁺ ions are prepared by the sol-gel route and treatment above 1000 °C. Transmission electron microscopy evidences a homogeneous dispersion of nanoclusters 4-6 nm in size in the amorphous silica matrix. Photoluminescence spectra excited at 3.5 eV, outside erbium transitions, show an inhomogeneous spectral distribution of light emission from interface defects, in the range 1.9-2.4 eV, resonant with transitions of erbium ions. The analysis of kinetics and temperature dependence of luminescence allows to quantify the efficiency of the energy transfer channel between nanoclusters and erbium ions.     

Luminescence of an erbium- and ytterbium-containing complex in porous silicon films

Er³⁺ and Yb³⁺ ions are introduced into porous silicon films, stabilized by oxidation in an oxygen plasma, in the form of a gadolinium oxychloride-based luminophor by means of thermal diffusion. An investigation is made of the luminescence and photoexcitation spectra of samples with Er³⁺ (10 and 30 wt.%), Yb³⁺ (10 wt.%), and Er³, Yb³⁺⁺ (10 wt.% each). It is shown that the intense IR luminescence (1.00 and 1.54 μm) is caused by cross-relaxation effects. The most effective excitation of the luminescence has been observed in the UV absorption band of the porous silicon. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 3, pp. 428–433, May–June, 1999.     

Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence

The Stark splitting of the energy levels of Er³⁺ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals.     

Luminescence of transparent glass ceramics containing Er<Superscript>3+</Superscript> and Yb<Superscript>3+</Superscript> zirconate-titanate nanocrystals

Luminescence regularities have been studied in new erbium/ytterbium materials based on glasses and glass ceramics of a magnesium-aluminosilicate system containing nanoscale erbium/ytterbium zirconate titanate crystals with the pyrochlore structure. Lifetimes of Yb³⁺ and Er³⁺ ions in the ² F_5/2 state and in the ⁴I_11/2 and ⁴I_13/2 states, respectively, and the efficiency of Yb³⁺ → Er³⁺ energy transfer have been evaluated. The identified spectral-luminescent characteristics of the studied glasses and glass ceramics co-doped with erbium and ytterbium ions show that these materials are promising media for producing laser generation in the spectral range around 1.5 μm.     

Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

SnO₂ thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO₂, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er³⁺ ions was found to be enhanced after doping SnO₂ with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc.     

Upconversion luminescence in Er-doped germanate-oxyfluoride and tellurium-germanate-oxyfluoride transparent glass-ceramics

Upconversion luminescence has been studied for Er³⁺ in a germanate-oxyfluoride and a tellurium-germanate-oxyfluoride transparent glass-ceramic using 800 nm excitation. Significantly increased upconversion luminescence was observed from transparent glass-ceramics compared with that from their corresponding as-prepared glasses. In addition to a strong green emission centered at 545 nm from ⁴S_3/2 state and a weaker red emission centered at 662 nm from ⁴F_9/2 state generally seen from Er³⁺-doped glasses, a violet emission centered at 410 nm from ²H_9/2 state and a near-ultra-violet emission centered at 379 nm from ⁴G_11/2 state were also observed from transparent glass-ceramics. The upconversion luminescence of Er³⁺ ions in transparent glass-ceramics revealed sharp Stark-splitting peaks generally seen in a crystal host. The increased upconversion efficiency is attributed to the decreased effective phonon energy and the increased energy transfer between excited ions when Er³⁺ ions were incorporated into the precipitated β-PbF₂ nanocrystals.     

Excitation mechanisms and localization sites of erbium-doped porous silicon

Porous silicon (PS) is doped with erbium by electrochemical anodisation. The penetration of erbium into the PS layer is confirmed by Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray (EDX) measurements. Efficient green and infrared emissions were observed at room temperature. The investigations are focused on the evolutions versus temperature and pump intensity of the green photoluminescence (PL) corresponding to the ⁴S_3/2 → ⁴I_15/2 transition. It was found that an erbium related level defect can be involved on the excitation and emission processes of erbium. Pump intensity dependent PL studies revealed that for the electrochemical incorporation, most of the Er³⁺ ions are localized inside the Si nanocrystallites and not in stoichiometric SiO₂. The optical cross-section is close to that of erbium in Si nanocrystallites.     

铒掺杂硼酸盐玻璃中的激发态阱

铒掺杂硼酸盐玻璃广泛应用于发光材料中,研究其发光动力学性质对于优化和提高其发光效率具有重要意义. 本文采用传统的熔融淬火法合成了摩尔比为2%的掺铒硼酸盐玻璃,并在低于硼酸盐玻璃转变温度(260 °C)下退火,退火处理后的掺铒硼酸盐玻璃光学性质得到了一定程度的提高. 硼酸盐玻璃未掺杂和掺杂Er³⁺的热性能采用差示扫描量热法以10 °C/min的速度进行测量. 同时还测量了掺铒硼酸盐玻璃发光机理的吸收光谱、激发光谱、稳态发射光谱、瞬态发射光谱和衰减动力学曲线. 实验结果表明Er³⁺在不同激发波长下556 nm处发射时具有不同的寿命,在掺铒硼酸盐玻璃中可能存在激发态阱,利用实验数据得到了激发态阱的深度为0.14 eV.     

Er离子注入的富硅SiO2MOS-LED的可见和红外电致发光特性

通过Er离子和Si离子注入并结合高温退火制备了Er掺杂的富硅SiO2薄膜以及ITO/SiON/富硅SiO2:Er/Si MOS结构电致发光器件.研究了富Si浓度的变化对Er3+离子掺杂的电致发光器件的发光性能和传导特性的影响.发现不同Si含量对Er3+离子的不同能级的电致发光会产生不同作用.在富Si量小于5％的条件下,...     

Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals

We construct the theory of carriers confined in Si quantum dots with finite energy barriers for electrons and holes in the framework of the multiband effective mass theory. We apply this theory for theoretical modeling of the excitation of erbium inside and outside of Si nanocrystals in SiO₂ matrix due to the Auger process induced by the recombination of a confined electron-hole pair as well as the intraband transitions of “hot” confined carriers. Auger de-excitation processes of the Er³⁺ ion leading to the quenching of erbium luminescence are discussed as well.     

Spectroscopic study of double sodium-yttrium fluoride crystals doped with erbium Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Er<Superscript>3+</Superscript>: I. Intensities of luminescence spectra and kinetics of luminescence

Na_0.4Y_0.6F_2.2:Er³⁺ (NYF:Er) crystals with an erbium concentration as high as 100 at. % (Na_0.4Er_0.6F_2.2) were grown by the Bridgman-Stockbarger method. The optical spectra were investigated at low (6 K) and room temperatures. It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790–801 and 965–980 nm) corresponding to the emission range of laser diodes. The peak absorption cross section σ_a for the band peaked at λ=970.4 nm is 0.15×10^?20 cm². On the basis of the analysis of the absorption and luminescence spectra at low (6 and 12 K) temperatures, the structure of the Stark splitting of erbium levels was determined as a structure of quasi-centers for which Stark components are inhomogeneously broadened. The oscillator strengths of the transitions from the ground state of erbium to excited multiplets were calculated from the absorption spectra measured at T=300 K, and the intensity parameters Ω_t were determined by the Judd-Ofelt method: Ω₂=1.65×10^?20 cm², Ω₄=0.56× 10^?20 cm², and Ω₆=1.01×10^?20 cm². These values of the intensity parameters were used to calculate the probabilities of radiative transitions and the branching ratios. The rates of multiphonon nonradiative transitions in NYF: Er were estimated. The luminescence decay kinetics for radiative levels of erbium ions upon their selective excitation by nanosecond laser pulses was studied. The intracenter lifetimes of radiative levels of erbium ions were determined from the luminescence kinetics upon selective ion excitation by low-intensity light in a sample with a low erbium concentration (0.5%). It is demonstrated that, with an increase in temperature from 6 to 300 K, luminescence from the ⁴ G _11/2, ² G(H)_9/2, and ⁴ F _9/2 levels is quenched as a result of multiphonon nonradiative transitions. Luminescence from the ⁴ I _9/2 level is quenched only insignificantly with increasing temperature, and no quenching of luminescence from the ⁴ I _11/2 and ⁴ I _13/2 levels is observed. The spectra of steady-state luminescence of NYF:Er(0.5–15%) crystals were investigated upon broadband excitation by UV and UV-visible lamp light and selective time-resolved laser excitation. It is shown that low-lying levels of erbium ions separated by an energy gap smaller than 2500 cm^?1 are populated via cascade mechanisms. On the basis of the results obtained, it is concluded that NYF:Er ³⁺ crystals are promising candidates for active media of tunable diode-pumped lasers.     

氟化物、氟磷酸盐和磷酸盐玻璃中Er3+离子的发光研究

测定了氟化物、氟磷酸盐和磷酸盐玻璃中Er³⁺离子的吸收、荧光和激发光谱,解释了基质玻璃对Er³⁺离子发光的影响。进一步研究了在这三种基质玻璃中Er³⁺离子发光的浓度效应和温度效应,讨论了Er³⁺离子内和离子间的能量转移过程。 关键词：     

Effective excitation cross section and lifetime of Er<Superscript>3+</Superscript> ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er³⁺ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er³⁺ ions in the first excited state ⁴I_13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er³⁺ electroluminescence.     

Time-Resolved Vacuum Ultraviolet Spectroscopy of Er<Superscript>3+</Superscript> Ions in the SrF<Subscript>2</Subscript> Crystal

The photoluminescence and photoexcitation spectra as well as the luminescence decay kinetics of Er³⁺ ions in the visible ultraviolet and vacuum ultraviolet (VUV) regions have been studied by the method of low-temperature, time-resolved VUV-spectroscopy on excitation by synchrotron radiation. In the VUV spectral region of the luminescence of SrF₂:1% Er³⁺, the 146.5-nm band with a time of decay of less than 0.6 nsec was revealed together with the well-known emission band at 164.3 nm (decay constant in the microsecond range). Its possible nature is discussed. The specific features of the formation of photoexcitation spectra of the f-f and f-d transitions in the Er³⁺ ion are considered. Competition between the processes of excitation of f-f and d-f luminescence has been revealed. It manifests itself in the inverse relationship of their photoexcitation spectra in a range of energies of incident photons that are close to the position of the 4fⁿ⁻¹5d configuration levels. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 519–523, July–August, 2005.     

Enhanced Green Emission from Er<Subscript>2</Subscript>WO<Subscript>6</Subscript> Nanocrystals Embedded Composite Tellurite Glasses

A series of tungsten-tellurite glasses activated with different concentrations (0–1.5 mol %) of Er³⁺ has been synthesized. The structural properties of the best luminescent sample and the optical properties of its Er³⁺ ions, are studied both immediate after its preparation as well as after its ageing. On ageing the glass suffers structural reorganization and generates Er₂WO₆—nanocrystals in the matrix, which greatly enhances the normal and upconversion green luminescence efficiency of Er³⁺. The nanocrystal aided enhancement of normal and upconversion luminescence of Er³⁺ of the glass has been attributed to the crystal field effects of the new environment of Er³⁺ in the nanocrystals. A phenomenon of preferential enhancement of red upconversion luminescence at the cost of green upconversion luminescence of Er³⁺ at its higher concentrations in the glass has been observed and the related photo-physics is proposed. The material shows the prospect of being used as NIR solar concentrator.