非晶态多层膜和单层膜的低角X射线衍射研究

本文对a-Si:H/(a-SiN_x:H)非晶态周期多层膜和单层膜进行了低角X射线衍射研究。在周期数较少的多层膜衍射的布喇格衍射峰的低角侧发现了一系列次级衍射峰;在单层膜样品的低角衍射中也发现了一系列小峰。对此,我们提出了一个用于计算非晶多层膜和单层膜衍射强度的简单公式,使实验结果得到解释,并提出了一种测量膜厚的方法。 关键词：     

Exchange couplings in magnetic films

Recent advances in the study of exchange couplings in magnetic films are introduced.To provide a comprehensive understanding of exchange coupling,we have designed different bilayers,trilayers and multilayers,such as anisotropic hard/soft-magnetic multilayer films,ferromagnetic/antiferromagnetic/ferromagnetic trilayers,[Pt/Co]/NiFe/NiO heterostructures,Co/NiO and Co/NiO/Fe trilayers on an anodic aluminum oxide(AAO) template.The exchange-coupling interaction between soft-and hard-magnetic phases,interlayer and interfacial exchange couplings and magnetic and magnetotransport properties in these magnetic films have been investigated in detail by adjusting the magnetic anisotropy of ferromagnetic layers and by changing the thickness of the spacer layer,ferromagnetic layer,and antiferromagnetic layer.Some particular physical phenomena have been observed and explained.     

Formation of short-period multilayer W/B4C compositions

The quantitative characteristics of the interlayer interaction in multilayer W/B₄C periodic compositions produced by magnetron sputtering are studied by small-angle X-ray diffraction using CuK _?? radiation and by electron microscopy of transverse cuts. It is found that approximately 0.85 nm of the tungsten layer thickness is consumed for the formation of mixed zones at layer boundaries. The mixed layers have a density of 13.4 ± 0.7 g/cm³ and contain tungsten in a bound chemical state. The effect of these mixed zones on the X-ray reflectivity of multilayer W/B₄C compositions is estimated. A method is proposed to determine the layer thickness at a small number of peaks in an X-ray diffraction pattern.     

Modelling self-assembling of colloid particles in multilayered structures

Simulations of particle multilayer build-up in the layer by layer (LbL) self-assembling processes have been performed according to the generalized random sequential adsorption (RSA) scheme. The first (precursor) layer having an arbitrary coverage of adsorption centers was generated using the standard RSA scheme pertinent to homogeneous surface. Formation of the consecutive layers (up to 20) was simulated by assuming short-range interaction potentials for two kinds of particles of equal size. Interaction of two particles of different kind resulted in irreversible and localized adsorption upon their contact, whereas particles of the same kind were assumed to interact via the hard potential (no adsorption possible). Using this algorithm theoretical simulations were performed aimed at determining the particle volume fraction as a function of the distance from the interface, as well as the multilayer film roughness and thickness as a function of the number of layers. The simulations revealed that particle concentration distribution in the film was more uniform for low precursor layer density than for higher density, where well-defined layers of closely packed particles appeared. On the other hand, the roughness of the film was the lowest at the highest precursor layer density. It was also predicted theoretically that for low precursor layer density the film thickness increased with the number of layers in a non-linear way. However, for high precursor layer density, the film thickness increased linearly with the number of layers and the average layer thickness was equal to 1.58 of the particle radius, which is close to the closely packed hexagonal layer thickness equal to 1.73. It was concluded by analysing the existing data for colloid particles and polyelectrolytes that the theoretical results can be effectively exploited for interpretation of the LbL processes involving colloid particles and molecular species like polymers or proteins.     

Remanence Characteristic of Nanostructure of Hard／Soft Magnetic Multilayered Systems

The relation between microscopic properties (e.e.,layer thickness,easy axis orientation) and the macroscopic magnetic properties such as remanent magnetization of the ferromagnetic multilayer system is investigated based on a simple micromagnet approach.We concentrate on a multilayer design with periodic boundary condition,where alternating soft/hard layers build a nanostructured multilayer.For any easy axis direction in the soft and hard layers a simple explicit expression of remanence of the system has been derived analytically.We find that the remanence clearly depends on the thickness of the soft magnetic layer and is nearly independent of the thickness of hard magnetic layer.On the other hand,the remanence increases upon reducing the angle enclosed by the saturation magnetization and the easy axis directions of soft magnetic layer.However,it is unsensitive to the easy axis direction of hard magnetic layer,but there exists a maximum remanence for a certain easy axis direction of hard magnetic layer.     

Remanence characteristic of nanostructure of hard/soft magnetic multilayered systems with random easy axis orientations

The macroscopic magnetic properties such as remanent magnetization of the ferromagnetic multilayer system with random easy axis orientations is investigated by using a effective micromagnet approach. The multilayer, which alternating soft/hard layers in which their easy axis orientations is random build a nanostructured multilayer, is considered to meet periodic boundary condition, the dependence of remanence on thickness has been analytical derived. Author find that the remancence clearly depends on the thickness of the soft magnetic layer nearly independence of thickness of hard magnetic layer. this analytical results are in excellent agreement with previous numerical results.     

Magnetic and magnetooptical properties of multilayer ferromagnet-semiconductor nanostructures

The magnetic and magnetooptical properties of spin-tunneling multilayer permalloy-silicon carbide nanoheterostructures deposited by rf sputtering have been studied. Magnetometric and magnetooptical methods are used to show that the magnetic-semiconducting nanostructures have a complex magnetic structure and to track the evolution of the magnetic properties of these structures as functions of the magnetizing field and the thickness and sequence order of ferromagnetic and semiconducting layers in them. The induction response and the field and orientation dependences of the transversal Kerr effect are found to have anomalies. The experimental results are interpreted under the assumption that there is exchange interaction between the ferromagnetic and semiconducting layers through a thin magnetically ordered transition layer formed inside the interface.     

Magnetic multilayers on nanosphere arrays with various curvature radius

[Co/Pt]_n multilayers with different Co thickness have been deposited on a silicon (Si) substrate to obtain better perpendicular anisotropy. The 0.5 nm thickness of the Co layer was chosen as the optimized thickness of the multilayer. Magnetic nanostructures with cap configuration were fabricated based on the template of polystyrene (PS) colloid sphere arrays with various curvature radius. Compared to the flat multilayer, the cap multilayer showed an oblique average anisotropy axis. When the curvature radius of the colloidal sphere increased, the shape of the multilayers changed from ellipsoidal to spherical, which led to a different dependence of magnetic properties on the field angles. The varying shape anisotropy, the dipole-dipole interaction between small magnetic caps, and the special nucleation mechanism on the spheres larger than 400 nm caused the M_r/M_s ratio and the coercivity to first increase and then decrease with varying curvature radius of the PS spheres.     

有ITO透明导电膜的平面分层介质系统的电磁波性能理论研究

理论研究了有ITO(indium tin oxide)透明导电膜的多层平面分层介质系统的电磁性能，给出的理论曲线和实测曲线符合很好.多层平面分层介质系统的电磁性能与ITO膜(方块电阻为8Ω)所在界面位置和平面分层介质系统层数及各层厚度等有关.优化设计了一种含有ITO透明导电膜的厚度仅7.35mm的四层平面分层介质系统，其在8—18GHz频段内电磁波反射性能很好.作为多层平面分层系统中的ITO导电膜，其方块电阻应低于30Ω，并且越小，其反射性能越好. 关键词： 多层平面介质系统 电磁性能 ITO透明导电膜     

Effects of Ag layer and ZnO top layer thicknesses on the physical properties of ZnO/Ag/Zno multilayer system

Two groups of transparent conductive ZnO/Ag/ZnO, ZAZ, multilayer coatings were successively deposited by direct current (DC) magnetron sputtering. Sputtering was carried out from zinc (Zn) and silver (Ag) metallic targets. The effects of Ag layer thickness and ZnO top layer thickness on the properties of the ZAZ multilayer system were examined using different analytical methods. The influences of the Ag layer thickness and ZnO top layer thickness on structural properties were studied using X-ray diffraction. The thicknesses of ZAZ multilayer system were determined using X-ray reflectometry. A sheet resistance of 2.3 Ω/sq at an Ag layer thickness of 17.7 nm was obtained. The sheet resistance changes slightly with ZnO top layer thickness. The optical properties of the films were analyzed. Both Ag layer thickness and ZnO top layer thickness affect transmittance. The optical constants of the ZAZ multilayer system were calculated from transmittance and reflectance measurements. The figure of merit was applied on the ZAZ coatings and the most suitable films for the application as transparent conductive electrodes were determined.     

Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

Structure and magnetic properties of magnetron-sputtered [(Fe/Pt/Fe)/Au]n multilayer films

Using dc magnetron sputtering, Fe/Pt/Au multilayer films were prepared, and the effects of Au layer thickness and annealing temperature on structure and magnetic properties of the Fe/Pt/Au multilayer films were investigated. The as-deposited Fe/Pt/Au multilayer films have good periodic structure with composition modulation along the growth direction. The stress stored in the as-deposited films promoted the ordering of the films annealed at 400 °C. When the films were annealed at 500 °C, the thicker Au layer could restrain the order-disorder transformation region volume and lead to the decrease of the ordered volume fraction with Au layer thickness increasing.     

Mo/Si多层膜表面保护层设计

为提高Mo/Si多层膜的稳定性与使用寿命,通过分析多层膜驻波电场的分布,对表面保护层及多层膜最上层材料的厚度进行优化设计,使优化后的反射率最高.计算表明,一定厚度的表面保护层总对应一个最优的最上层材料厚度.在13.36 nm波长,膜对数为50的Mo/Si多层膜10度入射的理论反射率为74.47%;当添加厚度为2.3 nm的Ru作为表面保护层,对应多层膜最上层Si的优化厚度为3.93 nm,其理论反射率为75.20％.设计结果表明,通过优化设计表面保护层,可以提高多层膜稳定性,改善多层膜性能.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Optical multilayer post growth instabilities: Analyses of Gd2O3/SiO2 system in combination with scanning probe force spectroscopy

Post growth multilayer instabilities of a certain periodic Gd₂O₃/SiO₂ multilayer systems have been investigated using scanning probe force-distance spectroscopy and optical spectrophotometric techniques. In the present work, we have noticed a strong correlation between the force spectroscopic results and the spectral properties of multilayer thin films, although measurement techniques and operating principles are quite different. From the experimental analysis, it was quite evident that the instability process, which starts during the nucleation and growth stage in thin films, continues to persist at a much longer time scale under post growth conditions. During this study it has been noticed that the elastic properties of the constituent thin films, the layer geometry and the bilayer thickness have strong correlation in trickling the multilayer instabilities. Such aspects also have strong interconnections with the morphological and viscoelastic changes. It is also noticed that most of the instabilities results cannot only be explained through elastic nature of the material alone. Instead, total number of layers, the layer structures, morphological changes, corresponding stiffness and the adhesion properties of the multilayer contribute substantially to these phenomena.     

Characterization and optimization of magnetron sputtered Sc/Si multilayers for extreme ultraviolet optics

Scandium/silicon multilayers have been deposited by magnetron sputtering and characterized by several techniques. Experimental peak reflectances of 0.22 and 0.37 have been measured respectively at wavelengths of 40 nm and 46 nm, for 10° incidence angle. The corresponding theoretical values for a perfect Sc/Si structure are respectively 0.38 and 0.57. In order to explain these differences between calculated and measured reflectivity, thin film and multilayer characterizations have been done. Effects of multilayer imperfections on the reflectivity have been estimated independently by means of simulation. Based on these results, a new design of Sc/Si multilayer is proposed with top layer thickness optimization. With this design, the experimental peak reflectance reaches 0.46 at a wavelength of 46 nm. PACS 78.67.Pt; 78.66.-W; 81.15.Cd     

Effect of the amorphous thin layer on the surface growth of amorphous/crystalline binary multilayer films

The effect of the amorphous thin layer on the surface growth of amorphous/crystalline binary multilayer films has been studied by using a continuum model. It is shown that both the surface roughness and the growth exponent of amorphous/crystalline binary multilayer films decrease with increasing thickness ratio between amorphous and crystalline layers. Our simulations have also revealed, in contrast to the monotonous rise in surface roughness observed in single-layer films grown on flat substrates, the surface growth of a multilayer film consists of two processes: interface smoothing and roughening, namely the film roughness decreases during the growth of amorphous thin layers but increases monotonously during the growth of crystalline thin layers. The observed interface smoothing and roughening can be obviously influenced by the change in the thickness ratio between amorphous and crystalline layers. The rise in thickness ratio between amorphous and crystalline layers enhances the interface smoothing effect but lowers the interface roughening effect and consequently shows a marked smoothing effect on the surface roughness.     

Optical excitation and emission processes of Si-QD/SiO2 multilayer films with different SiO2 layer thicknesses

Si-rich oxide/SiO₂ multilayer films with different SiO₂ layer thicknesses have been deposited by the plasma enhanced chemical vapor deposition technique, and crystallized Si quantum dot (Si-QD)/SiO₂ multilayer films are obtained after annealing at 1100 ^°C. The photoluminescence (PL) intensity of the multilayer films increases significantly with increasing SiO₂ layer thickness, and the PL peak shifts from 1.25 eV to 1.34 eV. The PL excitation spectra indicate that the maximal PL excitation intensity is located at 4.1 eV, and an excitation–transfer mechanism exists in the excitation processes. The PL decay time for a certain wavelength is a constant when the SiO₂ thickness is larger than 2 nm, and a slow PL decay process is obtained when the SiO₂ layer is 1 nm. In addition, the PL peak shifts toward high energy with decreasing temperature only when the SiO₂ layer is thick enough. Detailed analyses show that the mechanism of PL changes from the quantum confinement effect to interface defects with decreasing SiO₂ layer thickness.     

Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry

An ion beam sputtering system, which uses a commercial ECR microwave based plasma ion source, has been designed and fabricated in-house for deposition of soft X-ray multilayer mirrors. To begin with, in the ion beam sputtering system W, Si thin films, W/Si bi-layer and W/Si/W tri-layer samples have been deposited on c-Si substrates as precursors to W/Si multilayer stack. The samples have been characterized by grazing incidence X-ray reflectivity (GIXR), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. By analyzing the results, density, thickness, surface roughness of the single layer samples and interface width of the bi-layer and tri-layer samples have been estimated.     

197Au Mössbauer study of Au/Ni artificial multilayers

¹⁹⁷Au Mössbauer measurements have been performed at 16 K on the Au/Ni artificial multilayers having three different thickness of the layers those are 10Å Au/10Å Ni, 30Å Au/30Å Ni and 53Å Au/53Å Ni on a 250Å pure Au buffer layer. Mössbauer spectra obtained can be decomposed into mainly two components. One is an unperturbed component having an identical isomer shift value to the bulk Au metal. The other is the component perturbed strongly by the Ni layer indicating a broad contribution at positive velocity side and its intensity depends on the thickness of the Au layer. The spectrum from 10Å Au/10Å Ni multilayer is an entirely perturbed one and its area ratio to the component rising from pure Au buffer layer indicates the large Debye-Waller-factor suggesting the supermodulus effect in this multilayer.