High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate

We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defect density semipolar (11 2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Diode-pumped Nd:YAG laser emitting at 899 nm and below

We present what is, to the best of our knowledge, the first diode-pumped Nd:YAG laser emitting at 899 nm and below, based on the (4)F(3/2) - (4)I(9/2) transition, generally used for a 946 nm emission. A power of 630 mW at 899 nm has been achieved in cw operation and 16 mW at 884 nm with a fiber-coupled laser diode emitting 9 W at 808 nm. Intracavity second-harmonic generation in cw mode has also been demonstrated with a power of 100 mW at 450 nm by using a LiB(3)O(5) nonlinear crystal.     

Fabrication and modulation characteristics of InGaAsP/InGaAsP MQW DCPBH lasers at λ ∼ 1.57 μm

InGaAsP/InGaAsP multiple-quantum-well (MQW) double-channel planar-buried heterostructure (DCPBH) lasers emitting at λ∼ 1.57 μm were fabricated by optimizing the epitaxial growth with material characterization. At 25 °C (85 °C), a 1.8-μm-wide and 300-μm-long antireflectivity/high reflectivity coated laser exhibits a threshold current of 8 mA (23 mA) and a slope efficiency of 0.34 mW/mA (0.24 mW/mA) in continuous-wave mode (cw) as a result of the optimized thickness of the p-InP filling layer in the PBH structure with p-n-p-n current blocking layers. The maximum cw output power was approximately 20 mW at 25 °C, which was reduced to 17 mW at 85 °C. The peak wavelength varied from 1572 nm at 25 °C to 1602 nm at 100 °C for a fixed output power of 5 mW, indicating a temperature coefficient of ∼ 0.4 nm/K. The resonance frequency in the small-signal modulation response of devices depends on the etching depth of the U-shaped double channel; it increases from 0.4 GHz without channel etching to 4.3 GHz with 7-μm-thick etching. The full-width at half maximum values in the horizontal and vertical far-field patterns were approximately 24.5° (25.2°) and 29.4° (30.1°), respectively, at 25 °C (85 °C). PACS 42.55.Px; 73.61.Ey; 81.05.Ea     

Efficient multiple-longitudinally diode laser pumped Nd:YAG slab laser

The operation of an eightfold longitudinally diode laser pumped 1.06m cw Nd:YAG slab laser is demonstrated. The 809 nm diode radiation is focused through a dichroic coating into each laser channel starting from the reflection points of the 1.06m beam in the slab crystal. At an absorbed pump power in the crystal of 2830 mW a maximum cw TEM₀₀ output of 1075 mW was achieved with a corresponding slope efficiency of 42.5%.     

A novel structure of visible semiconductor lasers

Terraced substrate inner current stripe lasers emitting in the range of 750–780 nm are developed with very simple fabrication processes. The lasers have good performance of cw room temperature, linear light-current output over 30 mW per facet and maintain stable fundamental transverse and longitudinal mode of 2–4 times current threshold. The current threshold of 25 mA under cw room temperature operation has been achieved.     

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.     

Tunable CW laser oscillation of NdP5O14 at 1.3 μm

Low-threshold tunable cw laser oscillation is achieved at the⁴ F _3/2⁴ I _13/2 transition of NdP₅O₁₄. Continuous tunign over 1.8% of the central wavelenght is possible with 55 mW of absorbed pump power. At gain line maximum near 1.32 , the output power exceeded 1 mW. Pump threshold as low as 8 mW was observed. Reliable cw operation of the 1.3 m NdP₅O₁₄ laser pumped by a 15 mW AlGaAs laser diode is demonstrated.     

Highly efficient, low-cost femtosecond Cr3+ :LiCAF laser pumped by single-mode diodes

We describe efficient continuous-wave (cw) and cw mode-locked operations of a Cr3+ :LiCAF laser, pumped by inexpensive single spatial mode laser diodes. Up to 280 mW of cw output power was obtained with 570 mW of absorbed pump power, with a corresponding slope efficiency of 54%. Continuous tuning between 765 and 865 nm was demonstrated using a fused silica prism. A semiconductor saturable absorber mirror was used to initiate and sustain stable, self-starting, mode-locked operation. In cw mode locking, the laser produced 72 fs (FWHM) duration pulses, and 1.4 nJ pulse energy, at an average output power of 178 mW. Electrical to optical conversion efficiencies of 7.8% in mode-locked operation and 12.2% in cw operation were demonstrated.     

Continuous wave laser operation of Yb<Superscript>3+</Superscript>:YVO<Subscript>4</Subscript>

We have demonstrated the continuous wave laser operation of Yb³⁺:YVO₄. For Ti:Al₂O₃ laser pumping at 985 nm, a maximum slope efficiency of 41.1% and a threshold pump power of 76 mW were obtained. The maximum output power was 433 mW at a laser wavelength of 1037 nm.Using a cw diode laser around 974 nm as a pump source, a slope efficiency of 10.9% and a maximum output power of 152 mW were achieved at a laser wavelength of 1039 nm. The laser threshold pump power was 608 mW with respect to the absorbed pump power. The effective emission cross-sections for the ²F_5/2²F_7/2 transition were determined using the Füchtbauer–Ladenburg equation. The maxima of the effective absorption and emission cross-sections were found at 984.5 nm (6.74×10^-20 cm²) in -po larization and 985.5 nm (4.28×10^-20 cm²) also in -p olarization. The upper laser level lifetime was measured with suppression of radiation trapping and is around 318 s. PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

Optical frequency doubling of a single-mode dye laser in an external ring resonator

Optical frequency doubling of a single-mode cw Rhodamin 6G ring dye laser is performed with a thin angle-tuned LiIO₃ Brewster cut crystal in a stabilized passive ring resonator. A conversion efficiency of =5 mW uv/320 mW fundamental input power was achieved at =603 nm.     

Diode-pumped cw Nd:YAG three-level laser at 869 nm

We report for the first time (to our knowledge) a diode-pumped Nd:YAG laser emitting at 869 nm based on the (4)F(3/2)-(4)I(9/2) transition, generally used for a 946 nm emission. Power of 453 mW at 869 nm has been achieved in cw operation with a fiber-coupled laser diode emitting 35.4 W at 809 nm. Intracavity second-harmonic generation in the cw mode has also been demonstrated with power of 118 mW at 435 nm by using a BiB(3)O(6) nonlinear crystal. In our experiment, we used a LiNbO(3) crystal lens to complement the thermal lens of the laser rod, and we obtained good beam quality and high output power stability.     

Integrated optical Ti:Er:LiNbO3 distributed Bragg reflector laser with a fixed photorefractive grating

For the first time to the authors' knowledge, an integrated optical distributed Bragg reflector laser with a fixed photorefractive grating in LiNbO(3) is demonstrated. Sample preparation, grating fabrication, and laser characteristics are reported. The device is pumped by a fiber pigtailed laser diode (lambda(p) approximately 1480 nm) through the Bragg grating in a double-pass configuration, yielding an emission in the backward direction at lambda=1531.7nm . The laser threshold is 40 mW; as much as 5 mW of output power has been obtained at 110 mW of launched pump power in cw operation.     

Metal-clad ridge waveguide structure InGaP/InGaAIP visible laser diodes

InGaP/InGaAIP visible-light laser diodes with a metal-clad ridge waveguide structure have been fabricated. Compressively strained SCH-MQW structures were grown by low-pressure MOCVD and the lasing wavelength was 690 nm. The threshold current was 28 mA at 25°C for a 400 m cavity and 5 m stripe width. CW operation was obtained as the cleaved device by employing thick gold layer as a heat spreader. The light-output power versus CW current was linear up to a maximum light output power of 38 mW. Stable operation of the fundamental transverse optical mode was maintained up to 30 mW. These results show that this metal-clad ridge waveguide structure provides sufficient current confinement even under high light output power operation.     

Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs

Improved nonpolar m ‐plane light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

An ultra-bright two-photon source with a type-I bulk periodically poled potassium titanyl phosphate

We experimentally demonstrate an ultra-bright two-photon source with a type-I bulk periodically poled potassium titanyl phosphate. With the 390 nm cw laser from our home-made frequency doubler in a ring cavity as the pump, we detect about 340 k/s coincidence counts with a pump power of 0.11 mW in a Hanbury–Brown–Twiss-type experiment, which corresponds to the production rate of 94 MHz/mW with 40 nm bandwidth. With a 3 nm interference filter, we detect about 11.5 k/s coincidence counts with the same pump power, corresponding to the production rate of 4.3 MHz/mW/nm. This is very promising for many applications in quantum information field, such as transferring the information between a photon and an atomic system and so on.     

670 nm AlGaInP/GaInP strained multi-quantum well laser diode with high characteristic temperature (T 0)

A 670 nm AlGaInP/GaInP strained multi-quantum well laser diode with a high characteristic temperature (T ₀) has been achieved by optimization of quantum well structures and the metal-organic chemical vapour deposition process. The hole concentration of 5×10¹⁷ cm^-3 in the p-AlGaInP cladding layer on a (100) 5° off GaAs substrate has been obtained with very small ratio, 0.35, of mole flow rate of zinc source to the group III sources ([DEZn]/[III]) of 0.35. The threshold current and maximum temperature for continuous wave operation of lasers with cavity length of 300 m have been measured as 45 mA and 80°C, respectively. The characteristic temperature (T ₀) of the lasers has been measured as high as 153 K. The laser without facet protections could operate for more than 1000 h at 50°C and 5 mW.     

Diode-pumped Nd:GAGG-LBO laser at 531 nm

We report a green laser at 531 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1062 nm Nd:GAGG laser under in-band diode pumping at 808 nm. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.5 W, as high as 933 mW of cw output power at 531 nm is achieved. The fluctuation of the green output power was better than 3.5% in the given 4 h.     

GalnAsP-InP double-heterostructure lasers

GaInAsP-InP double-heterostructure lasers which are the most promising optical sources for the long wavelength region have been investigated. In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys. The unit cell of the GaInAsP epitaxial layer is tetragonally deformed due to the interface lattice misfit such that the lattice constant parallel to the wafer surface is invariant across the interfaces in the GaInAsP-InP wafers. Two kinds of stripe lasers, planar stripe and buried lasers, have been fabricated by use of GaInAsP cap layer for good p-type contact. The planar stripe lasers of 10,15 and 20 m wide stripe operated in fundamental-transverse mode with 20–30% differential external efficiencies per facet. The 15 m wide stripe laser showed good mode characteristics to operate in a fundamental-transverse mode up to the cw output power of 22 mW per facet and in a single longitudinal mode over a wide range of currents. The buried stripe laser operated in a fundamental-transverse mode with the threshold current as low as 30 mA by making the stripe width narrower than 2 (m. The laser succeeded in cw operation at 100 °C because of its low threshold current and low thermal resistance.The authors would like to thank K. Noda, N. Kuroyanagi and Y. Furukawa for their encouragement. Thanks are also due to H. Kano for permission to use his results of buried stripe lasers prior to publication, and S. Ando for his technical assistance.     

High efficiency single- and dual-wavelength Nd : GdVO<Subscript>4</Subscript> lasers pumped by a fiber-coupled diode

Diode-end-pumped high-efficiency single- and dual-wavelength Nd:GdVO₄ lasers have been demonstrated. For the single-wavelength operation, the maximum cw output powers of 15.6 W (M²=1.54) at 1063 nm and 7.5 W (M²=1.40) at 1342 nm were achieved under the highest available pump power of 26.5 W, having the respective optical-to-optical conversion efficiencies of 59.2% and 28.2% as well as the average slope efficiencies of 65.1% and 32.2%. For the dual-wavelength operation, under the available pump power of 12.6 W, we obtained the average power outputs of 1.0 W (M²=4.85) at 1063 nm and 1.4 W (M²=3.22) at 1342 nm with the respective pulse durations of 23 ns and 53 ns for quasi-cw operation, and the power outputs of 1.8 W (M²=5.35) at 1063 nm and 2.0 W (M²=4.76) at 1342 nm for cw operation. PACS 42.65.Ky; 42.79.Nv; 42.70.Mp     

Mid-infrared trace-gas sensing with a quasi- continuous-wave Peltier-cooled distributed feedback quantum cascade laser

A recently developed distributed feedback quantum cascade laser (QCL) capable of thermoelectric-cooled (TEC) continuous-wave (cw) operation and emitting at 9 m is used to perform laser chemical sensing by tunable infrared spectroscopy. A quasi-continuous-wave mode of operation relying on long current pulses (5 Hz, 50% duty cycle) is utilized rather than pure cw operation in order to extend the continuous frequency tuning range of the quantum cascade laser. Sulfur dioxide and ammonia were selected as convenient target molecules to evaluate the performance of the cw TEC QCL based sensor. Direct absorption spectroscopy and wavelength-modulation spectroscopy were performed to demonstrate chemical sensing applications with this novel type of quantum cascade laser. For ammonia detection, a 18-ppm noise-equivalent sensitivity (1 ) was achieved for a 1-m absorption path length and a 25-ms data-acquisition time using direct absorption spectroscopy. The use of second-harmonic-detection wavelength-modulation spectroscopy instead of direct absorption increased the sensitivity by a factor of three, achieving a normalized noise-equivalent sensitivity of 82 ppbHz^-1/2 for a 1-m absorption path length, which corresponds to 2×10^-7 cm^-1Hz^-1/2. PACS 42.55.Px; 42.62.Fi; 07.88.+y