Electronic properties and tunability in graphene/3D-InP mixed-dimensional van der Waals heterostructure

InP solar cell is promising for space application due to its strong space radiation resistance and high power conversion efficient (PCE). Graphene/InP heterostructure solar cell is expected to have a higher PCE because strong near-infrared light can also be absorbed and converted additionally by graphene in this heterostructure. However, a low PCE was reported experimentally for Graphene/InP heterostructures. In this paper, electronic properties of graphene/InP heterostructures are calculated using density functional theory to understand the origin of the low PCE and propose possible improving ways. Our calculation results reveal that graphene contact with InP form a p-type Schottky heterostructure with a low Schottky barrier height (SBH). It is the low SBH that leads to the low PCE of graphene/InP heterostructure solar cells. A new heterostructure, graphene/insulating layer/InP solar cells, is proposed to raise SBH and PCE. Moreover, we also find that the opened bandgap of graphene and SBH in graphene/InP heterostructures can be tuned by exerting an electric field, which is useful for photodetector of graphene/InP heterostructures.     

Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra

The photoexcited carrier dynamics and photoluminescence of the undoped InP and Fe implanted InP was studied by time-resolved reflection and photoluminescence spectra. The decay times of reflection recovery and the radiative recombination for Fe implanted InP are shorter than those of undoped InP. Considering the surface recombination, a model was developed to simulate the reflection recovery dynamics, it agrees with the experimental results very well. Moreover, we obtained the ambipolar diffusion coefficient and the surface recombination velocity by using the model. For Fe-doped InP, the surface recombination velocity is much larger than that for the undoped InP, which is probably due to Fe^2+/3+ trapping centers and the large surface band bending. The PL decay time for Fe implanted InP is shorter than that for undoped InP, which is ascribed to the capture centers introduced by metallic precipitates.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

金属有机化学气相沉积法在欧泊空隙中生长磷化铟的影响因素

制备磷化铟(InP)反欧泊三维光子晶体的关键是提高InP在欧泊空隙中的填充率。使用低压金属有机化学气相沉积(MOCVD)系统在人工欧泊空隙中生长了InP晶体,分析了影响InP在欧泊空隙中填充的因素及确定了InP的最佳生长条件。实验和理论分析的结果较为符合。磷化铟在人工欧泊空隙中的填充率越高,二氧化硅球和空隙间的折射率差越大,人工欧泊光子晶体光学性能的变化就越显著;周期生长、低压、使用和InP失配小的衬底以及异质同构现象有助于InP在欧泊空隙中的填充。在优化的生长条件下制备了填充率较高的SiO₂-InP光子晶体。研究结果为制备InP反欧泊结构积累了有益的经验。     

Fabrication of highly luminescent InP/Cd and InP/CdS quantum dots

Highly luminescent InP/Cd and InP/CdS core-shell QDs were fabricated by sequential addition of cadmium acetylacetonate and dodecanethiol to InP core solutions, which showed a red-shift in absorption and emission. ICP measurement revealed the existence of cadmium and TEM images showed the increased size of InP/CdS QDs. PXRD data identified zinc blend structures of InP and InP/CdS QDs, which indexed to the (1 1 1), (2 2 0) and (3 1 1) planes. The slight shift of peaks between InP and InP/CdS QDs can demonstrate the existence of CdS shell structures.     

A complexant-assisted hydrothermal procedure for growing well-dispersed InP nanocrystals

Well-dispersed InP nanocrystals have been synthesized via a hydrothermal reaction of In–ethylenediamine tetraacetic acid (EDTA) complex with red phosphorus and KBH₄ in aqueous solution at 160–200 °C for 26 h. The InP nanocrystals were characterized by powder X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The XRD patterns showed (1 1 1), (2 0 0), (2 2 0), (3 1 1), (2 2 2), (4 0 0) and (3 3 1) diffraction lines of the cubic InP nanocrystals. The TEM study revealed that the morphology of InP nanocrystals are of well-dispersed spherical shape. The size of InP nanocrystals can be controlled by changing the reaction temperature. The average InP nanocrystallites diameter is increased from 8.7 to 15.8 nm as the temperature increases from 160 to 200 °C. The Raman spectrum showed the transverse-optic (TO) and longitudinal-optic (LO) mode from InP nanocrystallites, and the LO and TO modes shift to lower frequencies with a decrease in the size of InP nanocrystals. The EDTA plays a key role in the nucleation and growth of InP nanocrystals, and the reaction mechanism is discussed.     

磷化铟纳米晶的制备及光学性质研究

阐述了目前国内外的磷化铟纳米晶研究状况。用有机溶剂回流退火法制备出了磷化铟纳米晶，并通过XRD谱计算出平均粒径为55nm。喇曼光谱表明：由于纳米颗粒的量子尺寸效应, 2个散射峰都向低能量方向发生了较大的移动。UV VIS表明样品的吸收边相对于体块InP（970nm）发生了显著的蓝移，说明带隙变宽，表现出明显的量子尺寸效应。PLE谱在380nm时，PL谱峰在573nm时,相对于体块InP的红外区的荧光光谱发光峰发生了显著的蓝移，说明磷化铟纳米晶在光电子器件领域和非线性光学领域有非常好的应用前景。     

生长周期对有机金属化学气相沉积法制备SiO2-InP光子晶体的影响

有机金属化学气相沉积(MOCVD)方法在人工蛋白石空隙中填充了磷化铟(InP)晶体以改变这类材料的光学行为,在选择了InP的生长条件的基础上进行了周期生长试验。利用扫描电子显微镜(SEM)和紫外可见光谱(UV-Vis)对人工蛋白石晶体及其填充InP后的形貌和反射谱特性进行了分析。结果发现,采用周期生长方式有利于InP在模板空隙中的填充,且在反应时间相同的条件下,反应周期数越多,InP在空隙中的填充率越高,填充率增加反过来增大了二氧化硅球和空隙之间的折射率差,从而可控地对所制备光子晶体光子带隙进行调制。实验表明InP具有较好的生长质量,此项研究为制备三维InP光子晶体打下了基础。     

Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment

We report on the electron-mediated ferromagnetism in Fe-doped InP from both first-principles calculations and experiments. Theoretically, based on the spin-polarized density functional theory within the Heyd-Scuseria-Ernzerhof (HSE03) approach, we systematically investigate the magnetic properties of Fe-doped InP and predict the existence of electron-mediated ferromagnetism. Experimentally, by diffusing Fe into the n-type InP wafer with thermal annealing at 800 C, we observe room-temperature ferromagnetism in InP:Fe, which is in agreement with the theoretical prediction.     

Ag/InP Schottky结热退化机理的研究

Ag/InP Schottky结是制作TE场助光电阴极的关键,本文利用Auger分析技术,详细地研究了热处理对Ag/InPSchottky结界面特性的影响。实验结果表明高温长时间热处理会导致严重界面相互扩散,同时使Schottky结的势垒高度降低,理想因子增大,泡利负电性理论很好地解释了扩散效应。势垒高度的降低及理想因子的增大也是由界面互扩散造成的,这种扩散导致界面特性由Schotthy特性向欧姆性质转化。为防止界面互扩散及Schottky结特性的退化,可选用负电性小的金属制作Schottky结,并在工艺上尽量减少热处理的温度和时间。     

Tunneling-induced dephasing in InP quantum dots

We observed the tunneling process of photo-excited holes in neutral InP quantum dots and Pauli blocking of charged InP quantum dots. A highly sensitive heterodyne-detected photon echo method enabled us to observe the signal from one layer of self-assembled InP quantum dots under the electric field. The electric field could control the charging or neutralization of the InP quantum dots and hence the photon echo signal decreased considerably with the increase of electron doping. The photon echo of neutral InP quantum dots under the electric field showed tunneling-induced dephasing, which decays non-exponentially reflecting the non-Markovian nature of the tunneling process.     

磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响

高温退火后掺铁半绝缘(SI)InP单晶转变为n型低阻材料.利用霍尔效应(Hall)，热激电流谱(TSC)，深能级瞬态谱(DLTS)，X射线衍射等方法分别研究了退火前后InP材料的性质和缺陷.结果表明受高温热激发作用部分铁原子由替位转变为填隙，导致InP材料缺少深能级补偿中心而发生导电类型转变.通过比较掺杂、扩散和离子注入过程Fe原子的占位和激活情况分析了这一现象的机理和产生原因. 关键词： 磷化铟 铁激活 退火 半绝缘     

Synthesis and characterisation of polypyrrole–indium phosphide composite film

Polypyrrole (PPy)–indium phosphide (InP) composite material was electrochemically prepared by the incorporation of InP into a PPy matrix during electrochemical synthesis (cycling) under magnetic stirring from the acetonitrile/LiClO4 electrolyte containing the Py and InP particles. The PPy–InP composite material was designed to explore new approaches to improve light-collection efficiency in polymer photovoltaic. The samples were characterised by cyclic voltammetry, impedance spectroscopy measurement, scanning electron microscopy, energy dispersive X-ray spectroscopy, UV–visible and photoelectrochemical measurements. It was observed that the photocurrent of the composites was higher than that of the single PPy films and increased with InP concentration. The study showed that the presence of InP particles in the polymeric film improves the optical and the photovoltaic properties of PPy and give information on the use possibility of these films for photovoltaic cells' application.     

SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar ion sputtering

The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes on InP(1 0 0) surfaces by low Ar⁺ ion sputtering process in UHV conditions from anodized aluminum oxide (AAO) templates. This process is a promising approach in creating ordered arrays of surface nanostructures with controllable size and morphology. To follow the Ar⁺ ion sputtering effects on the AAO/InP surfaces, X-ray photoelectron spectroscopy (XPS) was used to determine the different surface species. In_4d and P_2p core level spectra were recorded on different InP(1 0 0) surfaces after ions bombardment. XPS results showed the presence of metallic indium on both smooth InP(1 0 0) and AAO/InP(1 0 0) surfaces. Finally, we showed that this experiment led to the formation of metallic In dropplets about 10 nm in diameter on nanoholes patterned InP surface while the as-received InP(1 0 0) surface generated metallic In about 60 nm in diameter.     

Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage

Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.     

Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs: A five-band study

In this paper, room temperature PL spectra of InAs self-assembled dots grown on GaAs/InP and InP substrate are presented. For analyzing different positions of the PL peaks, we examine the strain tensor in these quantum dots (QDs) using a valence force field model, and use a five-band k·p formalism to find the electronic spectra. We find that the GaAs tensile-stained layer affects the position of room temperature PL peak. The redshift of PL peak of InAs/GaAs/InP QDs compared to that of InAs/InP QDs is explained theoretically.     

1.3μm场助TE光阴极In1-xGaxAsyP1-y/InP的能带计算及外延层的设计

本文首先简述了1.3μm场助TE光阴极InP(衬底)/In_1-xGa_xAs_yP_1-y(光吸收层)/InP(发射层)/Ag/CsO的工作原理,并对其能带结构进行了计算,得到了In_1-xGa_xAs_yP_1-y(光吸收层)/InP(发射层)的势垒高度、掺杂、InP发射层厚度、组份、渐变区宽度,偏压及耗尽层宽度间的定量关系。并由此出发,对光阴极各参数的设计进行了分析讨论。     

外差式相干探测时域光谱仪对磷化铟（InP）晶片的超宽频带太赫兹光谱的探测

磷化铟（InP）属于Ⅲ-Ⅴ族化合物半导体材料, 在毫米波的应用中展示出了高性能,在非线性太赫兹器件应用上具有很大的潜力。以前关于InP的研究主要集中于太赫兹频率在0.1～4 THz的频率范围内,在4～10 THz频率范围内InP的太赫兹光学数据还是空白。该研究利用空气等离子体相干探测太赫兹波的时域光谱系统研究了无掺杂的InP晶片在超宽THz频率范围（0.5～18 THz）内的光学特性, 实验中用电离的空气作为太赫兹的发射器和探测器, 利用可以调制的局部偏压诱导二次谐波产生,使在气体中太赫兹波的相干探测成为可能,明显提高了系统的动态范围和灵敏度。产生的太赫兹频谱宽度主要被激光脉冲持续时间所限制,太赫兹脉冲通过InP晶片后相对于参考脉冲会延迟,同时振幅会降低。另外,太赫兹信号的频谱振幅在6.7～12.1 THz范围内下降到本底噪声。同时还可以看出InP晶片在6.7～12.1 THz频率范围内不透光,在0.8～6.7 THz以及12.1～18 THz频率范围内InP的吸收系数相对较低,特别是在15～17.5 THz范围内吸收系数很低并且保持相对稳定,与此同时它的折射率单调增加。这些发现将有助于基于InP晶片的非线性太赫兹器件设计。     

基于InP/ZnS核壳结构量子点的色转换层设计及制作

提出了采用环境友好型InP/ZnS核壳结构量子点材料制备匹配蓝光Micro-LED阵列的量子点色转换层以实现Micro-LED阵列器件全彩化的技术方案。通过采用倒置式量子点色转换层方案,实现了InP/ZnS量子点材料和Micro-LED阵列的非直接接触,从而可以缓解LED中热量聚集导致的量子点材料发光主波长偏移、半峰宽展宽以及发光效率衰减等问题。量子点色转换层中内嵌PDMS聚合物柔性膜层,可以消除咖啡环效应,同时,色转换层中内嵌飞秒激光图案化处理的500 nm长波通滤光膜层,可以抑制蓝光从非蓝色像素单元出射。最后,实验制备了像素单元中心间距90μm的16×16 InP/ZnS量子点色转换层。该设计可以实现基于蓝光Micro-LED阵列的全彩色Micro-LED显示器件的制备,并且该制备方法可以降低全彩色Micro-LED阵列显示器件的制备成本。     

A Raman study of the strain in InP/GaAs heterostructures grown by MOVPE

A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to 280 nm, is reported. The InP LO phonon shows an increasing frequency blue-shift with decreasing layer thickness, indicating a residual compressive strain due to the lattice mismatch and to the difference between the thermal expansion coefficients of InP and GaAs.