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介绍了相变存储材料的工作原理与其工作性能之间的对应关系,相变存储材料的开发与材料性能要求密不可分,在分析当前主流相变存储材料Ge2 Sb2 Te5的优点与不足的基础上,指出无Te富Sb为未来相变存储材料体系的研究方向.控制相变行为是实现相变存储技术商业化的关键,材料的微观结构和相变机制决定了相变存储材料的相变行为,而计算材料学是研究相变存储材料微观结构与相变机制之间联系的必要手段.运用第一性原理动态模拟相变存储材料的相变过程,可以弥补静态结构分析的不足,推动对快速可逆相变机理动态过程的理解运用,同时为进一步研究相变存储材料提供借鉴. 相似文献
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以芒硝(Na2SO4· 10H2O)为主相变材料,采用物理共混法,筛选出合适添加辅助材料组成多元混盐体系,制备出相变温度在25℃左右的Na2SO4· 10H2O基复合相变材料,研究了原料配比对相变材料相变温度和相变潜热的影响.通过热重分析、T-history曲线、差示扫描量热法等表征了制备的芒硝基相变储能材料性质.结果表明:二元相变材料相变温度随着Na2CO3·10H2O增加而先降低后增大;相变材料相变潜热密度基本不变.三元相变材料相变温度随着NaCl、KCl、NH4Cl量增加相变温度降低;相变材料相变潜热密度相比于二元体系有所减小,且在一定范围内随着成核剂硼砂含量的增加该体系相变潜热密度基本保持不变,过冷度有明显下降.当Na2SO4· 10H2O量为86.4;、Na2CO3 · 10H2O量为9.6;、NaCl量为4;,对该配方改性添加3;的硼砂和0.1;的羧甲基纤维素钠时,此相变材料的相变温度为24.6℃,过冷度为0.3℃,相变潜热密度为179.6 J/g. 相似文献
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将四乙氧基硅烷(TEOS)和3-氨丙基三乙氧基硅烷(APTES)作为硅源,芒硝基相变储能微胶囊作为芯材,通过乳液聚合的方法制备了二氧化硅包覆的芒硝基相变储能微胶囊.测得芒硝基相变储能微胶囊的熔化焓和凝固焓分别为136.4 J/g和76.9 J/g,融化和凝固温度分别为23.6℃和17.6℃.微胶囊的核-壳结构减轻了无机水合盐固液分离程度,抑制了相分层现象的发生.在100次循环后,熔化焓为64.3 J/g,具有较好的循环稳定性,可用于热能存储等领域. 相似文献
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以SiC纳米纤维为传热介质,在其表面采用原位生长的方法,均匀负载了多孔碳材料,从而制备了多孔碳球/SiC纳米纤维载体材料.然后以十八醇为相变芯材,通过物理吸附法制备了多孔碳球/SiC纳米纤维/十八醇复合相变材料,研究了不同相变芯材负载量的复合相变材料的储热性能与稳定性能.DSC检测表明,负载40wt;十八醇的复合相变材料的熔点和凝固点分别为58.16℃和52.25℃,熔化潜热为101.42 J/g;负载50wt;十八醇的复合相变材料的熔点和凝固点分别为58.01℃和51.93℃,熔化潜热为115.47 J/g.与十八醇相比,负载40wt;十八醇的复合相变材料的导热率提高了71;;负载50 wt;十八醇的复合相变材料的导热率提高了62;.该复合相变材料在循环使用300次后,其导热率基本保持相同,具有稳定性高;相变芯材封装安全性好,相变潜热大,具有非常优异的应用性能. 相似文献
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以钾明矾(KAl(SO4)2·12H2O)为基元,分别加入不同质量比例的七水硫酸镁(MgSO4·7H2O)和芒硝(NaSO4·10H2O)混合均匀后加热融化,研究制备出的低共熔材料的相变温度、潜热释放平台及过冷和相分离变化情况.结果表明,七水硫酸镁和钾明矾在任意比例下的混合都能制得低共熔相变储热材料,共晶点在质量比5∶5附近,相变温度41.19℃,持续放热时间长,过冷度1.15℃,无相分离现象出现;而以芒硝与钾明矾混合制备低共熔相变储热材料,共晶点在质量比2∶8附近,相变温度50.10℃,过冷度1.2℃且无相分离现象出现.这两种处于共晶点成分(附近)的低共熔相变储热材料都是很有潜力的低温相变储热材料. 相似文献
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探究了二维石墨烯片(GNPs)对复合相变材料导热性的影响,以芒硝基复合相变材料(SCNa)为原料,制备出石墨烯片增强芒硝基复合相变材料(SCNaG).探讨了GNPs添加量对SCNa相变材料导热率的影响,并对其过冷机理进行了讨论.结果表明:复合相变材料导热系数随着GNPs添加量呈线性增加,当GNPs=0wt;时,相变材料导热系数为0.854 W/(m·K);当GNPs=3wt;时,相变材料导热系数为1.405 W/(m·K);随着GNPs添加量的增大相变材料过冷度先减小后增大,当GNPs=0.5wt;时,过冷度低于纯SCNa相变材料,为2.5℃C,当GNPs=3wt;时,过冷度增大至10.9℃.GNPs的添加量对相变材料相变温度影响不大,相变潜热略有减小. 相似文献
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采用失重法,并对腐蚀产物的物质组成和显微结构进行X射线衍射和扫描电镜分析,对十水硫酸钠基复合相变储能材料相变循环对不锈钢、铝合金、纯铜和黄铜等金属封装材料的腐蚀动力学特性进行了研究.结果表明:金属封装材料的耐腐蚀性为不锈钢最佳,紫铜的耐腐蚀性最差,其顺序为:不锈钢304>不锈钢201>铝合金1060>铝合金5052>铝合金6061>铝合金7075>黄铜>紫铜,纯铜的腐蚀主要以点蚀形式存在,蚀孔表面有Cu2O膜的存在,Cl-的存在与氧竞争吸附,加速腐蚀;黄铜也存在点蚀,同时黄铜与相变材料反应,生成物质粘附在黄铜表面.铝合金腐蚀以点蚀形式存在,腐蚀产物呈开裂状附着于基体表面.铜及合金和铝合金不适合做芒硝基复合相变储能材料的封装材料,不锈钢201和304呈现良好的耐腐蚀状态,适宜作为芒硝基复合相变储能材料的金属封装材料. 相似文献
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掺杂VO2薄膜的相变机理和研究进展 总被引:1,自引:0,他引:1
掺杂VO2薄膜是一种具有相变特性的功能材料,具有广阔的应用前景.本文综述了掺杂VO2薄膜的相变机理、制备方法和应用前景,并指出掺杂VO2薄膜的发展趋势,以期更好地探讨掺杂VO2薄膜的应用研究. 相似文献
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高岭石(K)是一种常见的黏土矿物,具有低成本、阻燃、多层结构等固有优点。本文采用真空浸渍法将硬脂酸(SA)吸附到插层高岭石(IKL)和二甲基亚砜(DMSO)复合物的孔隙中来制备用于储热的复合相变材料。通过X射线衍射(XRD)、红外光谱(FT-IR)、热重分析(TG)、差示扫描量热法(DSC)、扫描电子显微镜(SEM)和比表面积分析仪(BET)表征了复合材料的热性能、结构和主要组分。由于插层复合物形成后高岭石层间距增大,对SA的吸附率达到32.3%,熔化和凝固潜热值分别为43.36 J/g和43.16 J/g,熔化和凝固温度分别为51.9 ℃和51.7 ℃。此外,该复合相变材料具有较好的热稳定性。由于SA/IKL复合相变材料具有高吸附量、高潜热、良好的热稳定和低成本等优点,因此,其在实际的应用中具有潜在的价值。 相似文献
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激光直写技术(LDW)是当前数字化微纳加工的主要技术之一,其中喷墨打印技术以其分辨率高和控制灵活等优点被广泛应用。随着功能化材料的不断出现和越来越多的应用需求,喷墨打印技术对墨汁的严格要求限制了它在某些领域的应用。激光诱导向前转移(LIFT)技术无须模板和喷嘴,打印分辨率高,且不受墨汁流变性质的限制。该技术的材料适用范围广,几乎可以打印各种固体和液体材料,已被广泛应用于电子器件、传感器以及再生医学的组织工程等相关领域。本文系统阐述了LIFT技术制备微纳结构的研究现状,并对LIFT技术的应用及其物理过程的研究进展进行了系统地归纳与总结,研究结果将对LIFT技术在微纳加工领域的进一步应用提供重要参考价值。 相似文献
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《Journal of Non》2006,352(6-7):544-561
Principles, advantages, applications and drawbacks of pulsed laser deposition (PLD) technique for thin films preparation are reviewed. The PLD method is promising for preparation of thin films of complex composition, including rare-earth and Ag-doped chalcogenide films; all components of the target can be evaporated at once. Low volatility and refractory materials can be also deposited. The deposition in vacuum, inert or reactive atmosphere is possible. Results obtained in a study of chalcogenide films are discussed and the current state-of-the-art is reviewed. The composition and structure of PLD films can be different from thermally evaporated films and new materials or materials with new properties applicable in optics and optoelectronics can be prepared. The method can be used for fabrication of different chalcogenide-based sensors and memory materials of complex composition. Photoinduced changes of structure and properties of PLD films and chalcogenides exposed to intense laser pulses are also discussed. The intense laser pulses can change the properties of the materials prepared and can be used for fabrication of chalcogenide-based waveguides, diffractive elements and high-density optical data storage media. 相似文献
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The dielectric measurements of the layered crystal were studied in temperature range of successive phase transitions. The measurements revealed that the phase transition occurred in 242 K is an incommensurate phase transition. When the sample is annealed at a stabilized temperature in the incommensurate phase, a remarkable memory effect has been observed on cooling run. The mechanism of the memory effect in the incommensurate phase of the semiconducting ferroelectric TlGaSe2 can be interpreted in the frame of the theory of defect density waves. This theory claims that the memory effect is the result of pinning of the incommensurate structure by the lattice inhomogeneities. With decreasing the annealing temperature the phase transition temperature shifts to lower temperatures gradually. Moreover, the peak intensities also increase gradually. In addition to these effects, the phase transition temperature shifts to lower temperatures with increasing annealing time. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Fuxi Gan 《Journal of Non》2008,354(12-13):1089-1099
In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. 相似文献
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Xiaoyu Zhao Yaxin Wang Yongjun Zhang Jinghai Yang 《Crystal Research and Technology》2015,50(2):160-163
Ge2Sb2Te5 Units for Phase Change Memory are fabricated on 2‐dimesional polystyrene (PS) template in a magnetron sputtering system. SEM and TEM observations show the Ge2Sb2Te5 nanotubes form on the 200 nm PS beads which are etched for 30 s. And the lengths of the nanotubes are tuned by the film deposition. HRTEM and the electron diffraction measurements confirm the phase transition between the amorphous and the crystallized state. Resistance–voltage measurements show the operating voltage of the Ge2Sb2Te5 nanotube‐shaped unit is reduced due to the small contact area with the bottom electrode, which indicates its potential applications for phase change memory. 相似文献
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为研究钙稳定氧化锆质材料的高温电性能,以CaO为稳定剂,分别按照4mol;、8mol;和12mol;的掺杂量,与化学法制备的高纯氧化锆细粉混合,于模压法成型后,经1710℃×2h烧成制得试样.采用XRD和SEM分别对试样相组成和显微结构进行了分析,测定了不同试样室温到1350℃的电导率.实验结果表明:随着CaO掺杂量的增加,试样中立方相氧化锆含量增加,单斜相含量明显减少;试样的电导率随稳定剂掺杂总量的增加呈上升趋势,且随着测试温度的升高而增大;不同相组成使氧化锆材料在高低温区电导率存在着差异,其中立方相含量的增加有助于电导率的提高. 相似文献