Influence of Cr<Superscript>+</Superscript> ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi<Subscript>2</Subscript>/Si(111) heterostructures

The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers implanted by chromium ions with a dose varying from 6 × 10¹⁵ to 6 × 10¹⁶ cm⁻² and on subsequent growth of silicon is investigated for the first time. It is found that pulsed ion-beam annealing causes chromium atom redistribution in the surface layer of the silicon and precipitation of the polycrystalline chromium disilicide (CrSi₂) phase. It is shown that the ultrahigh-vacuum cleaning of the silicon wafers at 850°C upon implantation and pulsed ion-beam annealing provides an atomically clean surface with a developed relief. The growth of silicon by molecular beam epitaxy generates oriented 3D silicon islands, which coalesce at a layer thickness of 100 nm and an implantation dose of 10¹⁶ cm⁻². At higher implantation doses, the silicon layer grows polycrystalline. As follows from Raman scattering data and optical reflectance spectroscopy data, semiconducting CrSi₂ precipitates arise inside the silicon substrate, which diffuse toward its surface during growth.     

High current density ion-beam extraction

High current density (up to 700 mA/cm²) ion-beam extraction has been studied by 3D code KOBRA3-INP [INP, Junkerstr. 99, 65205 Wiesbaden, Germany]. Ion beams with such high current densities can be generated by ECR ion source driven by 37.5 GHz/100 kW gyrotron [Golubev S.V. et al. Trans. Furion Sci. Technol., 47, n. 1T, fuste 8, 345]. The influence of plasma parameters on extracted ion beam has been investigated. Different geometries of extraction system and applied potentials have been simulated to optimize extracted and transported ion beam current. KOBRA3-INP code has been applied to simulate ion-beam transport as well. The results of simulations have been compared with experimental results. Good agreement between measurements and simulations was always found by varying ion-beam space-charge compensation degree.     

Nickel metallisation of Si by dynamic ion-beam mixing

Abstract

Thin Ni films were prepared at room temperature by Ni metal vapour deposition and simultaneous irradiation by Ar ions with an energy of 2–20 keV. The reaction of Ni with Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 10¹⁷ and 8.9 × 10¹⁷ cm^?2, and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, C, and O were analysed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte Carlo simulation T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide.     

Effect of nitrogen implantation with overlay coatings on microhardness in 4145 steel

The effect of nitrogen implantation on microhardness in 4145 steel was investigated. Practically no increase in microhardness for 10, 20 and 40 gm loads was observed in samples implanted with a dose of 6.5×10¹⁷N⁺ ions cm^?2 at 94 keV. The effect of ion-beam induced intermixing of aluminium and titanium film (400Å), due to nitrogen implantation was also studied. A noticeable increase of 15% in microhardness was observed. Annealing at temperature ∽300°C proved effective, while a decreasing trend in hardness could be observed for annealing temperatures >300°C. Furthermore, preliminary test indicated that these samples were more suitable for wear-protection.     

Modeling of ion-assisted deposition using BCA computer simulation

Abstract

TRIM type binary collision approximation event store codes have employed to simulate collisional effects which occur during ion-beam or plasma assisted deposition of thin films.

Calculations can been performed using simplifying rate equation models, into which yields obtained from static TRIM simulations are inserted. Alternatively, the dynamic-composition code TRIDYN allows direct and complete simulations of the time-dependent processes.

Results are shown for different processes of ion-beam assisted deposition (IBAD), ion-beam mixing (IBM) post-treatment, and plasma-enhanced chemical vapour deposition (PECVD). Simulations of the formation of boron nitride films deposited from evaporated boron and energetic nitrogen show an excellent agreement with experimental results for nitrogen concentrations below the stoichiometric limit. For high N/B flux ratios, non-collisional mechanisms (ion-induced outdiffusion, surface trapping of outdiffusing nitrogen) have been included in the simulations, again producing good agreement with the experimental results. The ion-induced interface mixing of boron films on iron substrates is compared to experimental adhesion studies both for Ar⁺ post-treatment and Ar⁺ bombardment during deposition, demonstrating that the final adhesion is also influenced by other than purely collisional mechanisms. A special version of TRIDYN is used to treat the ion-induced densification of carbon films grown during simultaneous Ne⁺ bombardment, with reasonable agreement with experimental results. Finally, simple models are evaluated for the growth, composition and structure of C:H films grown in methane plasmas. The hydrogen content of the films decreases with increasing ion energy due to ion-induced release of hydrogen. Attempts to understand their bonding structure, in terms of the sp³/sp² ratio, on the basis of ion-induced preferential displacement, fail with respect to the energy dependence.     

The near surface changes in boron implanted 4145 steel

Boron implanted 4145 steel was evaluated for changes in the near-surface region property such as microhardness. The surfaces when implanted with ¹¹B⁺ ions at 135 keV energy to a dose 1 × 10¹⁷ ions cm^?2 resulted in increase of microhardness for 10 to 40 gms of applied load. An increase upto 40% in microhardness could be observed in the specimen when annealed at 310δC for 3 hours. Furthermore, the effect of ion-beam induced intermixing of 250Å thin carbon film due to boron implantation was also studied for different doses ranging from 1 × 10¹⁷ to 3 × 10¹⁷ boron ions cm^?2. An increase in microhardness with applied load was observed for 1 × 10¹⁷ ions cm^?2 concentration, while hardest layer was formed at 3 × 10¹⁷ ions cm^?2 dose which practically had very little effect to 10 and 20 gms of load.     

Ion beam modification of surface properties of CR-39

The effects of ion-beam bombardment on the physical and chemical properties of poly(allyl diglycol carbonate) (CR-39) polymer have been investigated. CR-39 samples were bombarded with 320 keV Ar and 130 keV He ions at fluences ranging from 1 × 10¹³ to 2 × 10¹⁶ ions/cm². The nature and extent of radiation damage induced were studied by UV–VIS spectrometry, Fourier-transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, as well as Vickers' hardness measurements. In addition, the effect of ion fluence on the wetting properties of ion-beam bombarded CR-39 polymer was determined by measuring the contact angle for distilled water. UV–VIS spectra of bombarded samples reveal that the optical band gap decreases with increasing ion fluence for both Ar and He ions. In the FTIR spectra, changes in the intensity of the bands on irradiation relative to pristine samples occurred with the appearance of new bands. XRD analyses showed that the degree of ordering of the CR-39 polymer is dependent on the ion fluence. Changes of surface layer composition and an increase in the number of carbonaceous clusters produced important change in the energy gap and the surface wettability. The surface hardness increased from 10.54 MPa for pristine samples to 28.98 and 23.35 MPa for samples bombarded with Ar and He ions at the highest fluence, respectively.     

Ion-beam mixing of multilayered targets ballistic effects

In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As⁺ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.     

Magnetic Properties of Thin Metal-Polymer Films Prepared by High-Dose Ion-Beam Implantation of Iron and Cobalt Ions into Polyethylene Terephthalate

Thin metal-polymer composite films have been prepared by high-dose ion-beam implantation of Fe⁺ and Co⁺ ions into polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2 · 10¹⁶ to 4 · 10¹⁷ cm⁻² have been performed, with the ion current density of 4 μA/cm². The effects of implantation dose on the film morphology and crystal structure have been investigated via atomic force and magnetic force microscopy and X-ray diffraction. The magnetic properties of synthesized structures have been studied by ferromagnetic resonance and with a vibrating-sample magnetometer. It was established that the properties of ion-implanted samples strongly depend on both the implantation dose and the type of implanted ions. The implantation dose at which the magnetic phase is formed for iron-implanted samples is significantly lower than that for cobalt-implanted ones. At high implantation doses due to polymer sputtering metal-containing layers are formed close to the sample surface for both ions. In this dose range the magnetic properties of implanted samples changed dramatically due to particle oxidation. The coercivity of synthesized layers reaches 180 and 300 Oe for iron- and cobalt-implanted samples, respectively. Authors' address: Vladimir Yu. Petukhov, Kazan Physical-Technical Institute, Sibirskii trakt 10/7, 420029 Kazan, Russian Federation     

Diffusion in nanocrystalline material

The paper reports on first investigations of the diffusion in nanocrystalline materials. The self-diffusion of the radioisotope ⁶⁷Cu in nanocrystalline copper has been measured by serial sectioning with the aid of ion-beam sputtering. The values of the diffusion coefficients which were found at 353 K and 393 K are 2×10⁻¹⁸ m²/s and 1.7×10⁻¹⁷ m²/s, respectively, i.e., they are about 16 or 14 orders of magnitude larger than the bulk self-diffusion and about 3 orders of magnitude larger than the grain-boundary self-diffusion in copper. In comparison to the bulk, small values for the activation enthalpy, 0.64 eV, and the pre-exponential factor of the self-diffusion coefficient, 3×10⁻⁹ m²/s, have been observed.     

Structure of Quinoline-4-Carboxaldehyde-2,4-Dinitrophenyl-N Methylhydrazone

Abstract

The crystal structure of the title compound, C₁₇H₁₃N₅O₄, has been determined by single crystal x-ray diffraction at room temperature. The molecule is not planar, with dihedral angles of 7.2(1)° between the quinoline ring and N-methylhydrazone group, and 17.45(2)° between the N-methylhydrazone group and the phenyl ring. The crystal parameters of this compound are as follows: monoclinic P 21/n, a=9.525(2)Å, b = 15.192(2) Å, c = 11.302(2) A, β = 94.722(3)°, V = 1629.8(6) ų, Z = 4, Dx = 1.432 g/cm³, F(000) = 728, λ (MoKα) = 0.71070 Å, μ = 0.106 mm^?1, R_int = 0.017. The structure was solved by SHELXS-86 and refined by SHELXL-93. R = 0.07 for 2438 observed reflections with I > 2σ (I).     

Second-Harmonic Generation in Domain-Inverted Grating Induced by Focused Ion Beam

The fabrication of a periodic domain inversion in LiTaO₃ and LiNbO₃ using direct ion-beam writing is presented. The polarization of these materials can be reversed at room temperature by irradiating Si²⁺ ions into +c faces. A first-order periodic domain inversion with a 50% duty cycle, a depth of 300μ, and an interaction length of 1 mm was realized in LiTaO₃. Using this structure, 300μW of blue light was generated for a conversion efficiency of 0.25%/W.     

Planarization of inhomogeneous structures by means of physical ion sputtering

The dynamics of ion-beam etching of test microstructures, simulating fragments of the surface structure of very large-scale modern integrated circuits, has been studied. Aluminum strip microstructures, 0.5 μm high and 1 μm wide deposited on the surface or embedded into SiO₂, were used as test samples. 1 keV Ar⁺ ion beam 1 with a current density 0.5 mA/cm₂, incident on the surface of a sample, rotating at a speed of 60 r/min, at an angle of 87°, has been used in the experiments. The surface morphology evolution was studied using atomic-force microscopy. The experiments demonstrate that physical ion sputtering at glancing incident angles can be used for the planarization of originally inhomogeneous structures. The achieved planarization degree allows one to use this method for defect detection in the metallization multilevel layers of very large-scale modern integrated circuits.     

Formation of the buffer layer of silicon suboxides SiOx in the Si/SiO2 low-dimensional heterosystem after Si+ ion implantation: Si L2, 3 X-ray emission spectra

Nanosized heterostructures n-Si/SiO₂ with different thicknesses of the oxide film (20, 500 nm) after implantation by Si⁺ ions with energies of 12 and 150 keV have been investigated using Si L _{2, 3} X-ray emission spectroscopy (the Si 3d3s → Si 2p _{1/2, 3/2} electronic transition). The ion-beam modification of the interface has been revealed and studied for the heterostructure with a silicon dioxide thickness of 20 nm. An analysis of the Si L _{2, 3} X-ray emission spectra has demonstrated that the Si⁺ ion implantation leads to the self-ordering of the structure of the initially amorphous SiO₂ film 20 nm thick due to the effect of high doses. A mechanism of ion-beam modification of the insulator-semiconductor interface has been proposed. No substantial transformation of the atomic and electronic structures of the heterostructure with a silicon dioxide thickness of 500 nm has been revealed after the ion implantation.     

Influence of rotational barrier of single-molecule electric revolving door on energies,aromaticity and quadrupole moment

We studied the response of rotation of spindle ring on energies, aromaticity and quadrupole moment in single-molecule revolving door (S-MERD) by using M05-2X/6-311++G^** level of theory. The rotational barrier was considered about the spindle ring from 0° to 180° by 10° intervals. Energies, aromaticity and quadrupole moment values are dependent on the rotation of spindle ring of S-MERD and were plotted as functions of rotation of spindle ring. Rotational barrier of energies, aromaticity and quadrupole moment for all substituents produces a cos²θ function. The nucleus-independent chemical shifts (NICS) of spindle ring increase as the spindle ring gradually rotates out of planarity and reach the highest NICS in the perpendicular conformation. For all substituents, the values of quadrupole moment of spindle ring decrease from 0° to 90° and then increase from 90° to 180°.     

Possibilities of the use of ion-beam methods for the diagnostics of planar nanostructures

The possibilities of the nondestructive ion-beam diagnostics of planar nanostructures by the Rutherford backscattering (RBS) of H⁺ and He⁺ ion beams with energies of 0.9–1.6 MeV is briefly reviewed. The results of the ion-beam testing of Ba_1?x Sr _x TiO₃ deposited onto Si (100), MgO (100), and NdGaO₃ (100) single-crystal substrates are discussed. The degree of element inhomogeneity over the thickness of the coatings under study and the level of the diffuse contamination of the films by substrate atoms are determined by means of RBS measurements.     

Dye laser saturation spectroscopy of the 23 S 1-23 P transition in6, 7Li+ ions

The metastable 2³ S ₁ state and the short lived 2³ P states of the helium-like^{6, 7}Li⁺ ion spectra have been investigated by dye laser saturation spectroscopy in a low-energy Li⁺ ion-beam and fluorescence light detection. The hyperfine structure splittings of all the levels, the 2³ P fine structure intervals and the isotope shift of the 2³ S ₁-2³ P transitions have been measured. These measurements were made by application of a specially constructed tunable dye laser system capable of single-mode laser scans over more than 60 GHz.     

Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2

We have used ion-beam mixing to form Si nano-crystals in SiO₂ and SiO₂/Si multilayers, and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 °C for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity than that of a Si-implanted SiO₂ film. Photon and electron-excited Si L_2,3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO₂ matrix after ion-beam mixing and heat treatment. It is found that Si L_2,3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO₂ films lead to noticeable changes in the spectroscopic fine structure. Received: 20 November 1999 / Accepted: 17 April 2000 / Published online: 5 October 2000     

A new design of low-loss and ultra-flat zero dispersion photonic crystal fiber using hollow ring defect

New hollow ring defect structure is introduced in photonic crystal fiber design for ultra- flat zero dispersion with very low waveguide losses. The hollow ring defect consisted of a central hole surrounded by a doped silica ring provides highly flexible defect engineering capabilities in photonic crystal fibers to achieve precise control of dispersion value and dispersion slope while independently maintaining low waveguide losses, which was not attainable in previous designs. A nearly flat zero dispersion of D=0±0.51 ps/nm km was obtained in the wavelength range of 1.44–1.61 μm with the maximum slope of ?2.7×10^?2 ps/nm² km. The confinement loss was less than 5.75×10^?8 dB/m along with the bending loss of 2.8×10^?6 dB/m for the radius of 10 mm, and splice loss of less than 1.57 dB to conventional single mode fiber at 1.55 μm.     

Effect of the dose and energy of Ar+ ions on the surface properties of vanadium and its alloys

The features of processes occurring on the surface of vanadium and its alloys irradiated using the ILU ion-beam accelerator with Ar⁺ ions at an energy of 20 and 40 keV up to doses of 5.0 × 10²¹ m^?2 and 1.0 × 10²² m^?2 at T _irr ≈ 700 K are studied. The effect of the dose and energy of implanted ions on the surface hardness is obtained. The thickness of the hardened layer is more than two orders of magnitude higher than the theoretical and experimental projected range of Ar⁺ ions at an energy of 20 and 40 keV in vanadium. Structural changes in the surface layers, which are expressed in a change in the intensity of reflections from a number of planes and an increase in the crystal-lattice parameter of the irradiated materials, are also observed.