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一维三元异质结构光子晶体反射特性 总被引:1,自引:0,他引:1
利用传输矩阵法对一维三元光子晶体异质结构的光学特性进行了研究,讨论了介质层厚无序度对三元结构光子禁带的影响.研究表明,将具有相互交叠光子禁带的一维光子晶体叠加构成异质结,可以有效地增大全角度反射的频率范围,当入射角从0°增大到89°,该结构均可实现从0.410 w/w0到0.654 w/w0宽频波段的全反射;相对于二元结构,三元结构可以减小在实际制作过程中随机误差引起的介质层厚无序对光子带隙的影响.该研究结果可为实现可见光及红外光波段大角度反射器的制备及应用提供理论支持. 相似文献
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利用传输矩阵法研究了镜像异质三周期一维光子晶体中的光子局域态随单轴应力发生变化的特性. 对于镜像异质三周期光子晶体, 由于其镜像结构, 破坏了光子晶体的有序性, 产生了一个缺陷态, 使其在较宽的光子禁带中心有一个光子局域态透射峰. 研究表明: 当对镜像异质三周期光子晶体施加单轴应力时, 其中的光子局域态透射峰会随着应力的改变而发生剧烈的变化. 当外部微弱的机械应力施加到光子晶体上时, 对光子晶体形成一个拉伸应变, 拉伸应变引起光子晶体结构的变化, 进而大幅度影响光子局域态透射峰的透射率.结果表明: 透射峰的透射率明显受单轴应力的影响. 这些特性可为用此结构的光子晶体设计超高灵敏度压力传感器提供理论参考.
关键词:
光子晶体
单轴应力
光子局域态
传输矩阵 相似文献
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利用传输矩阵法研究了正负折射率材料构成的异质结构光子晶体的光学传输特性。结果表明:当入射波正入射时,在这种异质结构光子晶体内出现了光子带隙,并且带隙内出现了3个极窄的透射峰,这是正负交替光子晶体和常规材料构成的同周期一维异质结构光子晶体所不具有的新颖物理特性。计算了这种异质结构光子晶体的透射谱。发现:这3个透射峰不敏感于入射角的变化,而在带隙两侧的透射峰则会随着入射角增大统一向带隙靠近;能带敏感于晶格厚度和周期数的变化。 相似文献
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用于波分复用的缺陷态复周期结构光子晶体滤波器的研究 总被引:3,自引:0,他引:3
利用传输矩阵法,研究了一种用于波分复用的光子晶体滤波器。该结构是中间包含一个缺陷层的一维三层念质的光子晶体,叫做缺陷态复周期结构光子晶体。通过数值计算得出它的色散关系和滤波特性。当改变缺陷层的厚度并保持其折射率不变时,带隙中将出现个数不同的局域模。缺陷层厚度增加时,局域模数也随着增加。适当调节缺陷层厚度,使带隙中出现八个窄带滤波窗口,能很好的用作八通道波分复用一解复用滤波器。由于很高的传输率和低的传输损耗,故在高速,长距离光通信中将有很好的应用。 相似文献
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铁电液晶缺陷光子晶体调谐滤波器的设计 总被引:2,自引:0,他引:2
将铁电液晶作为缺陷层引入一维光子晶体中,用电场改变液晶分子的取向,形成光子晶体快速可调谐滤波器.用传输矩阵法研究了铁电液晶缺陷光子晶体的可调谐滤波特性,计算了电压和液晶材料参量对滤波器透射谱的影响.结果表明:改变电压能容易改变光子晶体滤波器透射峰的位置、强度、个数和带宽,实现良好的调谐滤波功能. 相似文献
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用传输矩阵方法研究了由两种单负材料构成的光子晶体异质结构的透射特性.结果表明,当异质结构具有零有效折射率时,由于迅衰场表面模共振耦合,在异质结构双周期光子晶体的每一个分界面上都会出现隧穿模.零有效折射率隧穿模不受入射角、电磁波偏振态、结构周期数和晶格常数标度等因素影响,并且具有零相位延迟,这一特性可用来设计零相位延迟全向多通道滤波器件.而位于中心两侧的隧穿模随入射角、结构周期数和晶格常数标度的减小都统一由中心向两侧移动.
关键词:
单负材料
异质结构
传输矩阵 相似文献
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利用紧束缚方法分析了双局域态光子晶体产生双缺陷模的机理, 采用传输矩阵法研究了一维光子晶体的光学传输特性, 并得到了透射谱与晶体结构参数的关系, 在此基础上讨论了光子晶体在受到单轴应力时所表现出的介观压光效应, 据此设计了一种结构简单的应力调制的近红外波段的多通道滤波结构.通过数值模拟可以看出, 随着各介质层折射率或厚度的增加, 缺陷模发生红移.当对多系双局域态光子晶体施加单轴拉伸应力时, 各缺陷峰都向长波长移动, 且缺陷峰峰值基本不变.经过数值拟合, 缺陷峰中心波长与对光子晶体施加单轴拉伸应力所产生的应变呈线性关系.该滤波器结构简单、可调谐性好, 在一系列精巧的光子晶体激光器、波分复用器或者其他精密仪器的制造中有一定的应用价值. 相似文献
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缺陷态复周期光子晶体的特性研究 总被引:8,自引:2,他引:6
利用传输矩阵法计算复周期结构的光子晶体的色散关系和滤波特性 ,并重点研究了含有缺陷的类似于谐振腔结构的光子晶体滤波特性.由于这种缺陷态复周期结构的可调参数多,人们很容易得到在红外波段1550 nm附近窄带滤波窗口,透过率可达到近90%,而窗口以外的透过率在0.02%以下.当改变中间夹层厚度、周期数及缺陷层数时,窄带滤波窗口的位置和带宽发生改变.因此,它在高速,长距离光通信中将有很好的应用. 相似文献
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C. Wang C. Y. Wang 《The European Physical Journal B - Condensed Matter and Complex Systems》2006,54(2):243-247
An ideal single vacancy can be formed by removing one carbon atom
from a hexagonal network. The vacancy is one of the most important
defect structures in carbon nanotubes (CNTs). Vacancies can
affect the mechanical, chemical, and electronic properties of CNTs.
We have systematically investigated single vacancies and their
related point defects for achiral, single-walled carbon nanotubes
(SWNTs) using first-principles calculations. The structures around
single vacancies undergo reconstruction without constraint, forming ground-stateor metastable-state structures. The 5-1DB
and 3DB point defects can be
formed in armchair CNTS, while the 5-1DB-P and 5-1DB-T point defects can be
formed in zigzag CNTs. The related point defects can transform into
each other under certain conditions. The formation energies of
armchair CNTs change smoothly with the tube radius, while in the
case of the 3DB defect, as the radius get larger, the formation energies
tend towards a constant value. 相似文献
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J. Silcox 《Contemporary Physics》2013,54(4):256-277
In this article, the nature of the defects in crystal structures and the way in which they can be studied by electron microscopy of thin metal foils are discussed in detail. Examples of phenomena observed in metals with the electron microscope are briefly presented. These include the dislocation structures introduced by work hardening, fatigue, quenching and irradiation; examples of microstructures found in alloys; and magnetic domain walls. 相似文献
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The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth. 相似文献
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We consider spatial organization of point defects in the generalized model of defects formation in elastic medium by taking into account defects production by irradiation influence and stochastic contribution for defects dynamics satisfying the fluctuation dissipation relation. We have found that depending on initial conditions and control parameters reduced to defects generation rate caused by irradiation, temperature and the stochastic source intensity different stationary structures of defects can be organized during the system evolution. Studying phase transitions between phases characterized by low- and high defect densities in stochastic system we have shown that such phenomena are described by mechanisms inherent in entropy-driven phase transitions. Stationary patterns are studied by amplitude analysis of unstable slow modes. 相似文献
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LI Xide 《Chinese Journal of Lasers》1999,8(6):503-508
1 Introduction Layerstructuresanddefectsofafiberreinforcedcompositematerialaretwoimportantfactorsforitsstrengthanddamagemechanism.Traditionally,onecangetsurfaceinformationofacompositebymeansofopticalmetrology,suchasholographicinterferometry,speckle… 相似文献
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E. Kröner 《International Journal of Theoretical Physics》1990,29(11):1219-1237
Since line defects (dislocations) and point defects (vacancies, self-interstitials, point stacking faults) in Bravais crystals can mutually convert, only theories which comprise these two sorts of defects can be closed in the sense of general field theory. Since the pioneering work of Kondo and of Bilby, Bullough, and Smith it is clear that differential geometry is the appropriate mathematical tool to formulate a field theory of defects in ordered structures. This is done here on the example of the Bravais crystal, where the above-mentioned defects are the only elementary point and line defects. It is shown that point defects can be described by a step-counting procedure which makes it possible to include also point stacking faults as elementary point defects. The results comprise two equations with the appropriate interpretation of the mathematical symbols. The point defects are step-counting defects and are essentially described by a metric tensorg, which supplements the torsion responsible for the dislocations. The proposed theory is meant to form a framework for defect phenomena, in a similar way that Maxwell's theory is a framework for the electromagnetic world. 相似文献
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N. Hatefi-Kargan D.P. Steenson P. Harrison E.H. Linfield S. Khanna S. Chakraborty P. Dean P.C. Upadhya I. Farrer D.A. Ritchie B. Sherliker M. Halsall 《Infrared Physics & Technology》2007,50(2-3):106-112
Ion implantation is a postgrowth processing technique which, when combined with annealing, can be used to tune the absorption wavelength of quantum well devices. We have implanted and annealed, three different quantum well infrared photodetector structures, and measured the absorption spectra of the samples by Fourier transform spectroscopy. The peak absorption wavelength shift of each structure has been calculated as a function of diffusion length by simulating the diffusion processes. We found different diffusion rates for the structures and attribute this to different numbers of as-grown defects. Our results indicate that agglomeration of single defects into defect clusters limits the ability of ion implantation to tune the wavelength of a structure with a higher number of as-grown defects. Thus, a structure with the lowest number of as-grown defects is most useful for fabricating a multi-color quantum well photodetector by ion implantation, because in this case ion implantation can enhance the diffusion rate considerably leading to large red- shift in peak absorption wavelength. 相似文献