Two-mode injection locking in vertical-cavity surface-emitting lasers

We report on the dynamics that accompany polarization switching induced by orthogonal optical injection in a vertical-cavity surface-emitting laser (VCSEL). As the injection strength increases, the VCSEL bifurcates to injection-locked steady states and time-periodic and possibly chaotic dynamics. Of particular interest is a two-mode injection-locking solution, i.e., locking of the two VCSEL polarization modes. A detailed stability analysis unveils new bistability mechanisms in optical injection problems.     

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.     

Nonlinear localized modes in bandgap microcavities

We study experimentally an electrically pumped GaAs-based bandgap structure based on a vertical cavity surface emitting laser (VCSEL). We demonstrate that a microcavity embedded into this bandgap VCSEL structure supports localized optical modes without any holding beam. We propose a model of surface-structured VCSELs based on a reduced dissipative wave equation for describing electromagnetic modes in such semiconductor cavities and analyze a crossover between linear and nonlinear solitonlike cavity modes.     

垂直腔面发射激光器热特性的实验研究

本文通过对垂直腔面发射激光器发光波长随器件本身温度变化的实验研究,得到了我们研制的垂直腔面发射激光器在连续工作状态下内部温度升高的值,并且通过对激光器脉冲激射阈值随器件本身温度变化的关系研究,得到了我们现有工艺条件下,研制低阈置器件所需的实验数据.     

Lateral Waveguiding Properties of VCSELs for Integrated Optical Monitoring

We have investigated experimentally the optical behaviour of a Vertical-Cavity Surface-Emitting Lasers (VCSEL) when it is used as a lateral waveguide. This provides a better understanding of the mechanisms involved in VCSEL optical power monitoring by integrated lateral detection. The lateral optical spectra as well as the waveguide transmission spectrum have been measured. Their analysis and comparison demonstrate that the lateral signal is mostly coming from the spontaneous emission escaping laterally from the VCSEL and that light is filtered during the propagation and detection processes. This allows us to explain previous results obtained in two different configurations of lateral detection. These results are useful to optimize the lateral detection performances for concrete applications in monitoring or telemetry systems.     

Influence of polarization mode competition on the synchronization of two unidirectionally coupled vertical-cavity surface-emitting lasers

We analyze theoretically the effect of polarization mode competition on the synchronization of two unidirectionally coupled vertical-cavity surface-emitting lasers (VCSELs). Chaos in the master laser is induced by delayed optical feedback, and the slave laser is subject to isotropic optical injection from the master VCSEL. We show that the synchronization quality can be enhanced when the chaotic regime in the master VCSEL involves both fundamental orthogonal linearly polarized modes.     

氧化光栅型垂直腔面发射激光器的研究

通过分析矩形出光孔径和亚波长金属光栅结构,发现大孔径高功率垂直腔面发射激光器(VCSEL)的偏振控制的难点在于横模非常复杂。因此提出一种新型的氧化光栅型VCSEL结构,不仅能够很好地在有源区内引入各项异性的增益结构,并且最大的优势还在于能够完美地控制大孔径VCSEL的横模。通过有限元软件对器件有源区的电流分布进行了模拟,发现当光栅脊的宽度为1.8 μm时,载流子在光栅两端聚集的现象基本上可以消除,而且其电流密度分布差可以达到很高。     

Vertical cavity surface emitting laser transverse mode and polarization control by elliptical holes photonic crystal

The polarization of traditional photonic crystal (PC) vertical cavity surface emitting laser (VCSEL) is uncontrollable, resulting in the bit error increasing easily. Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently. We analyze the far field divergence angle, and birefringence of elliptical hole PC VCSEL. When the ratio of minor axis to major axis b/a=0.7, the PC VCSEL can obtain single mode and polarization. According to the simulation results, we fabricate the device successfully. The output power is 1.7 mW, the far field divergence angle is less than 10°, and the side mode suppression ratio is over 30 dB. The output power in the Y direction is 20 times that in the X direction.     

Tailoring wave chaos in vertical-cavity surface-emitting lasers via polarization control

We demonstrate that polarization control in combination with the geometrical shape affects wave chaos phenomena in vertical-cavity surface-emitting lasers (VCSELs). In a grating-polarization-stabilized VCSEL, we demonstrate wave chaos in one polarization mode and a transition from wave chaos to regular behavior in the other orthogonal polarization mode. We quantify the amount of chaoticity via the Brody nearest-neighbor distribution. Comparing with a reference VCSEL without a surface-grating, we explain these results and their injection current dependence by the surface-grating-induced mode selection and a change in the effective resonator shape.     

Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

The present paper deals with the analysis of a non-oxide type of vertical-cavity surface-emitting laser (VCSEL) for operation at 850 nm. The modeling and characterization of the VCSEL is presented in the context of design considerations. Efforts are made to emphasize the behavioral features of the proposed VCSEL, in view of the analytical investigation, which has been performed through a series of simulations for various relevant parameters that are vital for the determination of the VCSEL characteristics. Some of these parameters are the intensity and refractive-index distributions, gain response, spontaneous emission, material gain variations, etc. The results obtained are compared with the oxide-confined VCSEL. It is observed that the proposed model of the VCSEL is suitable at the operating wavelength of 850 nm.     

径向桥电极高功率垂直腔面发射激光器

为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。     

N-DBR和双氧化限制层对VCSEL电、光、热特性的影响

根据增益波导垂直腔面发射激光器直接耦合的准三维理论模型,通过有限差分法对注入电流密度、载流子浓度、光场和热场分布方程求自洽解.研究了垂直腔面发射激光器的电、热和光波导特性,同时提出了一种具有双氧化限制层的增益波导垂直腔面发射激光器结构,并通过对比研究了N-型分布布喇格反射镜和双氧化限制层对增益波导垂直腔面发射激光器特性的影响.计算结果表明,如果忽略N-型分布布喇格反射镜的影响将与实际的垂直腔面发射激光器有较大偏差;双氧化限制层结构对激光器特性有较大的改善,它为增益波导垂直腔面发射激光器提供了一种降低阈值,抑制高阶横模的方法.     

Towards the transverse mode-locking of oxide-confined VCSELs

We have investigated the lasing modes of oxide-confined vertical-cavity surface emitting lasers (VCSELs). The individual Laguerre–Gaussian modes have been spectrally and spatially resolved with scanning confocal microscope with time resolution of 4 ps. Subject to the injection of ultrafast laser pulses, the VCSEL showed irregular pulsed emission which indicates the potential for transverse mode-locking of the VCSEL.     

Amplitude-squeezed emission from a transverse single-mode vertical-cavity surface-emitting laser with weakly anticorrelated polarization modes

We discuss the polarization-resolved intensity noise characteristics of a transverse single-mode vertical-cavity surface-emitting laser (VCSEL). Measurements by a sensitivity-enhanced lock-in amplifier detection scheme yield only an imperfect anticorrelation between the strong and the weak orthogonally polarized fundamental modes. Yet the total emission shows amplitude squeezing of 0.4 dB below the shot-noise level. Unlike for transverse two-mode emission, a perfect anticorrelation between the two polarization modes is not necessary for generation of amplitude-squeezed emission in a transverse single-mode VCSEL, in agreement with theoretical predictions.     

Observation of the wave function of a quantum billiard from the transverse patterns of vertical cavity surface emitting lasers

We demonstrate experimentally that the near-field and far-field transverse patterns of a large aperture vertical cavity surface emitting laser (VCSEL) can be successfully interpreted as a two-dimensional (2D) billiard system. It is found that the near-field and far-field transverse patterns of a large aperture VCSEL evidently represent the coordinate-space and momentum-space wave functions of a 2D quantum billiard, respectively. The result of this paper suggests that large aperture VCSELs are potentially appropriate physical systems for the wave-function study in quantum problems.     

VCSEL with reticular electrode and larger emitting aperture and its optoelectronic characteristics

The enlargement of the emitting aperture is usually one of the important methods of increasing vertical- cavity surface-emitting laser （VCSEL） optical output power. However, in a VCSEL with a larger aperture, the inhomogeneity in the injected current often causes inhomogeneous or even no emission. To solve this problem and to increase VCSEL output power, as well as to improve its thermal characteristics, we develop a new type of injected VCSEL with a larger aperture and a reticular electrode, where the conventional circular injection electrode of the P side is turned into a reticular one, and the heat sink is on the N side. The tests of the new VCSEL show an improvement in homogeneity in not only the injected current but also the emission intensity. The optical output power is also considerably increased, and the device optoelectronic performance is improved.     

808nm大孔径垂直腔面发射激光器研究

垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W. 关键词： 半导体激光器 垂直腔面发射激光器 高功率 大孔径     

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with a 16-μm oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5℃ C-80℃. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced selfheating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced selfheating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.     

Improved efficiency of GaAs-based VCSEL by utilizing fan-pad metallization and trench patterning

Emphasizing the Vertical-Cavity Surface-Emitting Laser (VCSEL) device packaging, fan-pad metallization and trench patterning are demonstrated for VCSEL operating at 850 nm of the electromagnetic spectrum. The fabricated devices are observed to exhibit low threshold current and series resistance, contributing thereby to higher VCSEL efficiency. It is also observed that the output spectral characteristics of the fabricated device show stable multimode operation. The results indicate that the proposed VCSEL packaging exhibits superior device performance as compared to the VCSEL device packaged with square-pad metal.     

894nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用

报道了自行研制的894 nm高温垂直腔面发射激光器(VCSEL)以及基于此类器件的芯片级铯原子钟系统的应用实验结果.根据芯片级铯原子钟对VCSEL在特定高温环境下产生894.6 nm线偏振激光的要求,对器件的量子阱增益及腔模位置等材料结构参数进行了优化,确定增益-腔模失谐量为-15 nm,使器件的基本性能在高温环境下保持稳定.研制的VCSEL器件指标为:20—90?C温度范围内阈值电流保持在0.20—0.23 m A,0.5 m A工作电流下输出功率0.1 mW;85.6?C温度环境下激光波长894.6 nm,偏振选择比59.8:1;采用所研制的VCSEL与铯原子作用,获得了芯片级铯原子钟实施激光频率稳频的吸收谱线和实施微波频率稳频的相干布居囚禁谱线.