Visible photoluminescence from Ge+-implanted SiO2 films thermally grown on crystalline Si

+ -implanted SiO₂ films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The SiO₂ films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. There are two excitation bands in the PL excitation (PLE) spectra. With variation in Ge nanocrystal size, the PL and PLE peak energies show no appreciable shift. The PL and PLE spectral analyses suggest that during the PL process, electron–hole pairs are generated by the E(l) and E(2) direct transitions inside Ge nanocrystals, which then radiatively recombine via luminescent centers in the matrix or at the interface between the nanocrystal/matrix. Received: 27 January 1998/Accepted: 18 March 1998     

K X-ray fluorescence cross-sections for some light elements excited by keV photons

K and K X-ray fluorescence cross-sections have been experimentally determined for the elements Cu, Se, Y, and Mo at excitation energies 23.62, 24.68, 36.82, 43.95, 48.60, and 50.20keV using an X-ray tube with a secondary exciter system as the excitation source. The X-ray tube with a secondary target arrangement was used to obtain high intensity with high degree of monochromatization. Experimental values were compared with the theoretical values using tabulated I ratios based on Hartree-Fock and Hartree-Slater theories calculated by Scofield. The experimental values for all the elements at various excitation energies are in good agreement with the theoretical values.     

Magnetic circular dichroism in soft X-ray resonant inelastic scattering

We discuss the application of resonant inelastic X-ray scattering to the study of magnetic systems in the soft X-ray range. To this end we distinguish two broad areas. In the first the layout of the experiment is such that the absorption magnetic circular dichroism (MCD) is not zero. In the second the magnetisation is perpendicular to the incident helical beam so that the absorption MCD is zero. In the first area we summarise published results on Fe-Co alloys and we present new data on Mn impurities in Ni together with calculations. In the second area we summarise published results on Ni in Ni-ferrite with final 3s shell excitation and we present new results on Co-metal and Co in Co-ferrite measured with a new approach. This is based on the incident energy dependence of the integral of the Raman spectrum in inner shell excitation (integrated resonant Raman scattering). The potentialities and the limitations of the above methods are critically presented. Received: 23 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001     

X-ray characterization of precipitates in cerium-doped PbTe and SnTe crystals

The homogeneity, solid solubility, and chemical bonds in the new materials PbTe, SnTe doped with Ce were investigated. Scanning electron microscope observation and electron probe microanalysis carried out on PbTe crystals doped with Ce, revealed three types of Ce-rich precipitates with following compositions: CeTe₂, Ce₃Te₇, Ce₂Te₅ and small admixture of PbTe in precipitates. The solubility of Ce in PbTe matrix was estimated as 0.5±0.1 at. %. The solubility of PbTe in CeTe₂ and Ce₃Te₇ was found to be 3±0.5 at. %, but 7±0.5 at. % in the case of Ce₂Te₅. In SnTe crystal doped with Ce only one kind of precipitate with composition Ce₂SnTe₅ was found. Cerium solubility in SnTe matrix was estimated to be 1±0.25 at. %. According to our knowledge this is the first report of the identification of Ce₂SnTe₅ compound. The similar compounds Ce₂SnS₅ and Ce₂SnSe₅ are known. Received: 9 December 1998 / Accepted: 9 February 1999 / Published online: 28 April 1999     

Field emission and photoluminescence characteristics of ZnS nanowires via vapor phase growth

Large-area ZnS nanowires were synthesized through a vapor phase deposition method. X-ray diffraction and electron microscopy results show that the products are composed of single crystalline ZnS nanowires with a cubic structure. The nanowires have sharp tips and are distributed uniformly on silicon substrates. The diameter of the bases is in the range of 320-530 nm and that of the tips is around 20-30 nm. The strong ultraviolet emission in the photoluminescence spectra also demonstrates that the ZnS nanowires are of high crystalline perfection. Field emission measurements reveal that the ZnS nanowires have a fairly low threshold field, which may be ascribed to their very sharp tips, rough surfaces and high crystal quality. The perfect field emission ability of the ZnS nanowires makes them a promising candidate for the fabrication of flexible cold cathodes.     

Deep UV laser induced fluorescence in fluoride thin films

Fluorescence experiments have been performed to study the interaction of 193-nm laser radiation with dielectric thin films of LaF₃, AlF₃, and MgF₂. Spectral- and time-resolved measurements reveal the presence of cerium in LaF₃ and the influence of hydrocarbons in MgF₂ and LaF₃. Virtually no fluorescence response is observable in the case of AlF₃. Supplementary measurements on multilayer stacks confirm the contribution of hydrocarbon and cerium emission in high-reflective UV mirrors upon ArF excimer laser irradiation. Energy density dependent measurements indicate a linear absorption process as the origin of UV laser induced fluorescence in LaF₃. Luminescence calculations are applied as a helpful tool in order to account for interference effects that are inherently to be found in the multilayer emission spectra. Received: 21 May 2002 / Accepted: 23 May 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-3641/807-601, E-mail: heber@iof.fraunhofer.de     

Refraction effect of scattered X-ray fluorescence at surface

The angular distribution of X-ray fluorescence shows anisotropic radiation. We proved that the origin of the anisotropic radiation is X-ray refraction by using a scattered X-ray fluorescence model. Utilizing the refraction effect of X-ray fluorescence, we can obtain much information: for example, surface density, chemical condition, surface roughness, and particle diameter of element, as a new tool of studying surfaces and interfaces. We introduce a new X-ray dispersive system utilizing X-ray refraction.     

Strong blue photoluminescence from aligned silica nanofibers

Photoluminescence (PL) and infrared spectra of aligned silica nanofibers are investigated. Two striking strong blue luminescence emissions have been found at room temperature. This suggests that the silica nanofibers could be a candidate material for a blue-light emitter. The intensity of the PL emission decreases after annealing, which can be interpreted as the decrease of the oxygen deficiency resulting in the reduction of radiative recombination centers. Infrared spectra provide further evidence of this conclusion, where the enhancement of Si–O absorption is observed in annealed samples. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-10/8264-9531, E-mail: ldai@vip.sina.com     

Application of resonant X-ray emissions for molecular/electronic structure analysis of boron nitrides

* –B1s^-1 transitions were observed in w-BN composed of four-fold boron atoms and in h-BN composed of three-fold boron atoms, when the photon energy of the incident undulator beams coincided with the B1s–B2pπ^* absorption energy. However, no resonance was observed in c-BN composed of four-fold boron atoms. The resonant X-ray emission reflects the electronic structure of unoccupied molecular orbitals which strongly depend on the conformnations of the boron atoms. These findings confirm that resonant X-ray emissions can be useful indices for molecular and electronic structure analysis of boron nitrides. Accepted: 6 March 1997     

Time-resolved 2-photon photoionization on metallic nanoparticles

Received: 16 October 1998 / Revised version: 11 December 1998     

Spin-resolved NEXAFS from resonant X-ray scattering (RXS): Application to MnO

Resonantly excited metal K core line spectra of NiO, MnO, CuO and other compounds have been investigated at the beamlines X21 (NSLS/BNL), BW1 and W1.1 (HASYLAB/DESY). A novel technique for quantitative resolution of NEXAFS spectra into spin-up and spin-down components has been developed. Since the method employs spin conservation and local spin references, it needs no circularly polarized radiation and no sample magnetization for taking both the RXS and NEXAFS spectra. Hence antiferromagnetic and paramagnetic materials can be investigated as well.By utilizing linear dichroism with angular-dependent measurements on single-crystal samples, additional resolution of NEXAFS spectra is possible with respect to the orbital symmetry. Application of the method to paramagnetic MnO, for the first time, provides new and unambiguous experimental results confirming modern (LSDA+U) calculations. Received: 29 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001     

Synthesis and photoluminescence characteristics of AlN nanocrystalline solids

A new condensed form of AlN nanocrystalline solids was obtained directly from reactions of metal Al and (NH₄Cl+NH₄I) in liquid ammonia at 550 °C, without the subsequent consolidation process as in the conventional method. The synthesized product is a transparent bulk solid, while the constituted nanocrystals have an average size of about 18 nm and possess the same wurtzite structure as bulk AlN. (NH₄Cl+NH₄I), which plays a role of a catalyst in the present synthetic route, is indispensable. The photoluminescence spectrum of the AlN nanocrystalline solids shows a broad blue band centered at 400 nm. Received: 20 June 2000 / Accepted: 22 June 2000 / Published online: 9 August 2000     

X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO

X-ray Raman spectra of bulk amorphous SiO have been measured at energy losses around the Si L_II,III-edges for different momentum transfers at beamline ID16 of ESRF. The spectra are compared with measurements of the L_II,III-edges of Si powder and with results of first-principles calculations for Si and α-quartz SiO₂. Indications of sub-oxidic contributions to the L_II,III-edges are found in the experiment and discussed with respect to the model of interface clusters mixture in bulk amorphous SiO.     

Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2

We have investigated the origin of room temperature photoluminescence from ion-beam synthesized Ge nanocrystals (NCs) embedded in SiO₂ using steady state and time-resolved photoluminescence (PL) measurements. Ge NCs of diameter 4-13 nm were grown embedded in a thermally grown SiO₂ layer by Ge⁺ ion implantation and subsequent annealing. Steady state PL spectra show a peak at ∼2.1 eV originating from Ge NCs and another peak at ∼2.3 eV arising from ion-beam induced defects in the SiO₂ matrix. Time-resolved PL studies reveal double exponential decay dynamics on the nanoseconds time scale. The faster component of the decay with a time constant τ₁∼3.1 ns is attributed to the nonradiative lifetime, since the time constant reduces with increasing defect density. The slower component with time constant τ₂∼10 ns is attributed to radiative recombination at the Ge NCs. Our results are in close agreement with the theoretically predicted radiative lifetime for small Ge NCs.     

A combined approach to fabricating Si nanocrystals with high photoluminescence intensity

This work demonstrates that by combining three methods with different mechanisms to enhance the photoluminescence (PL) intensity of Si nanocrystals embedded in SiO₂ (or Si-nc:SiO₂), a promising material for developing Si light sources, a very high PL intensity can be achieved. A 30-layered sample of Si-nc:SiO₂/SiO₂ was prepared by alternatively evaporating SiO and SiO₂ onto a Si(1 0 0) substrate followed by thermal annealing at 1100 °C. This multilayered sample possessed a fairly high PL efficiency of 14% as measured by Greenham's method, which was 44 times that of a single-layered one for the same amount of excess Si content. Based on this multilayered sample, treatments of CeF₃ doping and hydrogen passivation were subsequently applied, and a high PL intensity which was 167 times that of a single-layered one for the same amount of excess Si content was achieved.     

Microstructures and photoluminescence of hydrogenated amorphous carbon films produced by using organic hydrocarbon source

Thin layers of hydrogenated amorphous carbon were prepared by using organic hydrocarbon source, xylene (C₈H₁₀), in plasma-enhanced chemical vapor deposition (PECVD) system. The microstructures were characterized by using Fourier-transform infrared and Raman scattering spectra. The appearance of a sharp vibration signal in 1600 cm^-1 strongly suggests the existence of sp² carbon clusters with aromatic rings. With increasing the deposition rf power, the content of these aromatic structures is increased in the films. In contrast to a broad single PL peak in methane (CH₄)-baseda-C:H films, the PL band of xylene-based a-C:H films contains multiple peaks in blue-green light region, which is influenced by rf power. We tentatively attributed it to the radiative recombination of electron-hole pairs through some luminescent centers associated with aromatic structures. Received: 26 April 2000 / Accepted: 9 May 2000 / Published online: 13 September 2000     

Electroluminescence of Si Nanocrystal-Doped SiO2

We perform a comparative st udy on the electroluminescence （EL） and photoluminescence （PL） of Si nanocrystaldoped SiO2 （nc-Si：SiO2） and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si：SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.[第一段]     

Correlation between photoluminescence, optical and structural properties of amorphous nitrogen-rich carbon nitride films

Amorphous nitrogen-rich carbon nitride (CN_x) films have been prepared by inductively coupled plasma chemical vapour deposition (ICP-CVD) utilizing transport reactions from a solid carbon source. The nitrogen atomic fraction N/(C+N) is about 1 or even higher as detected by various surface and bulk sensitive methods. An investigation of the chemical bonding structure showed that the films are composed of >C=N units with a small fraction of C≡N groups. Based on these findings, several structural units derived from cis- and trans-conjugated carbon–nitrogen chains are proposed. The optical properties of the CN_x films were studied by transmission spectroscopy and spectral ellipsometry; the optical Tauc gap was determined to 2.1±0.05 eV. The photoluminescence characteristics were measured at three different excitation wavelengths (476, 488 and 515 nm) and revealed two individual contributions. These data are interpreted in terms of the different structural units comprising the nitrogen-rich CN_x films. Received: 14 July 2000 / Accepted:17 July 2000 / Published online: 22 November 2000     

Laser manipulation of the size and shape of supported nanoparticles

Laser manipulation of the size and shape of metal nanoparticles prepared by self assembly of atoms on dielectric surfaces is discussed. The technique relies on the optical properties of the aggregates and the ability to remove atoms from their surfaces by laser induced thermal evaporation. A theoretical model which allows one to understand the basic mechanisms of the process is presented. Furthermore, experiments are reviewed which demonstrate that laser irradiation can be exploited for strong narrowing of initially broad size distributions yielding almost monodispersed samples and generation of aggregates with predetermined shape irrespective of their size. This makes possible preparation of very special surfaces with novel physical and chemical properties. Optical spectroscopy of the supported particles is demonstrated to be a very sensitive tool for characterization of such adsorbate/substrate systems, in particular for detection of laser induced modifications of the nanostructured surfaces. Finally, prospects for future experiments in this field and possible applications of the monodispersed systems are outlined. Received: 31 March 2000 / Accepted: 21 June 2000 / Published online: 7 March 2001